Patents by Inventor Noriyoshi Suzuki

Noriyoshi Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6743700
    Abstract: A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1×1020/cm3 to 1×1021/cm3 and containing fluorine at a concentration of 1×1015/cm3 to 1×1017/cm3.
    Type: Grant
    Filed: May 29, 2002
    Date of Patent: June 1, 2004
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Taketomi Asami, Mitsuhiro Ichijo, Noriyoshi Suzuki, Hideto Ohnuma, Masato Yonezawa
  • Publication number: 20030128774
    Abstract: A receiver apparatus receives substantially concurrently a plurality of signals k (k=1, 2, . . . , M) that have been transmitted while being allocated in a broad, first frequency band. The receiver apparatus includes a frequency conversion section for reallocating the signals k in a second frequency band within which the signals k can be sampled by a single AD converter; an AD conversion section for sampling the signals k having being reallocated into the second frequency band at a sampling frequency fs such that digital data of the sampled signals k are obtained in a third frequency band extending from zero Hz to a frequency represented by fs/2; and a signal extraction section for extracting a target base band signal k from the digital data obtained through the sampling by the AD conversion section.
    Type: Application
    Filed: May 24, 2002
    Publication date: July 10, 2003
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Noriyoshi Suzuki, Tomohisa Harada, Tsutayuki Shibata, Hisanori Uda, Hiroaki Hayashi, Nobuo Itoh
  • Publication number: 20030082859
    Abstract: A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1×1020 to 1×1021 /cm3, is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.
    Type: Application
    Filed: September 24, 2002
    Publication date: May 1, 2003
    Inventors: Mitsuhiro Ichijo, Taketomi Asami, Noriyoshi Suzuki
  • Publication number: 20030043927
    Abstract: A multicarrier demodulation method for a multicarrier transmission scheme adapted to receive and demodulate a signal consisting of N subcarriers which contain at least N-M (M<N) nullcarriers as subcarriers is characterized in that digital signals corresponding to N sampling points which enable demodulation of all the N subcarriers are obtained; digital signals corresponding to M preset sampling points are extracted from the digital signals corresponding to the N sampling points; a matrix is provided for demodulating, from the digital signals corresponding to the M sampling points, to desired L subcarriers (L<M) among M subcarriers other than the N-M nullcarriers, on the basis of the numbers of the M subcarriers other than the N-M nullcarriers and the numbers of the extracted sampling points; and the desired L subcarriers among M subcarriers other than the N-M nullcarriers are demodulated by use of a product of the provided matrix and a vector which includes as components the digital signals correspondin
    Type: Application
    Filed: July 3, 2002
    Publication date: March 6, 2003
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventor: Noriyoshi Suzuki
  • Publication number: 20020182828
    Abstract: A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1×1020/cm3 to 1×1021/cm3 and containing fluorine at a concentration of 1×1015/cm3 to 1×1017/cm3.
    Type: Application
    Filed: May 29, 2002
    Publication date: December 5, 2002
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Taketomi Asami, Mitsuhiro Ichijo, Noriyoshi Suzuki, Hideto Ohnuma, Masato Yonezawa
  • Patent number: 6115426
    Abstract: An adaptive communication apparatus for use in a multicarrier transmission system in which data sequence to be transmitted is divided into a plurality of data sequences, and these data sequences are converted into a high-frequency signal including a plurality of carriers allocated different frequencies and radio-transmitted in parallel. In the adaptive communication apparatus, a received high-frequency signal is separated into a plurality of carriers by a wave separator. The frequency characteristic of the received high-frequency signal is corrected by a frequency characteristic compensation unit. The frequency characteristic compensation unit is controlled by a controller through use of the high-frequency signal subjected to signal processing by the frequency characteristic compensation unit and the wave separator.
    Type: Grant
    Filed: November 21, 1997
    Date of Patent: September 5, 2000
    Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Mitoshi Fujimoto, Tsutayuki Shibata, Noriyoshi Suzuki, Chisato Endo
  • Patent number: 5604559
    Abstract: A photosensitive material processing apparatus includes plural processing tanks each to process a photosensitive material; plural cartridges each to fill solid processing agents for replenishment used in each of the plural processing tanks.
    Type: Grant
    Filed: July 18, 1995
    Date of Patent: February 18, 1997
    Assignee: Konica Corporation
    Inventors: Kenji Yamanouchi, Noriyoshi Suzuki
  • Patent number: 5508777
    Abstract: A photosensitive material processing apparatus for processing a photosensitive material such as a photographic film and a photographic print in use with a solid processing agent. The apparatus includes: a processing tank for processing the photosensitive material; a processing agent accommodating chamber for accommodating the solid processing agent; a pump for circulating a processing solution between the processing tank and the processing agent accommodating chamber; and a processing agent supply for supplying the solid processing agent to the processing agent accommodating chamber. The processing agent accommodating chamber includes a processing agent dissolving member which further includes a processing agent support member for supporting the solid processing agent. A sectional area of the processing agent support member is increased as it comes to a lower portion of the processing agent supporting member.
    Type: Grant
    Filed: October 17, 1994
    Date of Patent: April 16, 1996
    Assignee: Konica Corporation
    Inventors: Wataru Isokawa, Kenji Yamanouchi, Noriyoshi Suzuki, Toshihiko Watanabe
  • Patent number: 5420699
    Abstract: A processing machine to process information recorded on a photographic film to be processed in the form of plural information. When information contents relating to the same processing item are recorded both in the form of information that is possible to rewrite and in the form of information that is impossible to rewrite, the photographic film is processed based on the form of information that is possible to rewrite.
    Type: Grant
    Filed: November 3, 1993
    Date of Patent: May 30, 1995
    Assignee: Konica Corporation
    Inventors: Kenji Yamanouchi, Takao Misawa, Hiromi Yanatori, Noriyoshi Suzuki, Masanori Makino
  • Patent number: 4769278
    Abstract: In this resilient multi layered member, there are provided as laminated together: a surface skin layer, formed of PVC resin powder made into a gel, on the outside side of the resilient multi layered member; a foam material layer, formed from foamed PVC resin powder, the outer side of which is adhered to the inner side of the surface skin layer; a cushion material layer, the outer side of which is adhered to the inner side of the foam material layer; and a substantially stiff core material layer, the outer side of which is adhered to the inner side of the cushion material layer, on the inside side of the resilient multi layered member. There may be further included an adhesive layer by means of which the outer side of the cushion material layer is adhered to the inner side of the foam material layer. The cushion material layer may be formed from urethane foam, or from non woven fabric, which may be a felt material, and may have a density greater than about 200 grams per square meter.
    Type: Grant
    Filed: June 18, 1987
    Date of Patent: September 6, 1988
    Assignee: Kasai Kogyo Co., Ltd.
    Inventors: Tomohisa Kamimura, Noriyoshi Suzuki, Takashi Imaizumi