Patents by Inventor Noriyoshi Suzuki
Noriyoshi Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120248432Abstract: A highly reliable semiconductor device having stable electric characteristics is provided by suppressing, in a transistor including an oxide semiconductor film, diffusion of indium into an insulating film in contact with the oxide semiconductor film and improving the characteristics of the interface between the oxide semiconductor film and the insulating film. In an oxide semiconductor film containing indium, the indium concentration at a surface is decreased, thereby preventing diffusion of indium into an insulating film on and in contact with the oxide semiconductor film. By decreasing the indium concentration at the surface of the oxide semiconductor film, a layer which does not substantially contain indium can be formed at the surface. By using this layer as part of the insulating film, the characteristics of the interface between the oxide semiconductor film and the insulating film in contact with the oxide semiconductor film are improved.Type: ApplicationFiled: March 19, 2012Publication date: October 4, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Kosei NODA, Noriyoshi SUZUKI
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Patent number: 8278740Abstract: An object of the present invention is to provide a semiconductor device including an insulating layer with a high dielectric strength voltage, a low dielectric constant, and low hygroscopicity. Another object of the present invention is to provide an electronic appliance with high performance and high reliability, which uses the semiconductor device. An insulator containing nitrogen, such as silicon oxynitride or silicon nitride oxide, and an insulator containing nitrogen and fluorine, such as silicon oxynitride added with fluorine or silicon nitride oxide added with fluorine, are alternately deposited so that an insulating layer is formed. By sandwiching an insulator containing nitrogen and fluorine between insulators containing nitrogen, the insulator containing nitrogen and fluorine can be prevented from absorbing moisture and thus a dielectric strength voltage can be increased. Further, an insulator contains fluorine so that a dielectric constant can be reduced.Type: GrantFiled: April 1, 2011Date of Patent: October 2, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Satoshi Toriumi, Noriyoshi Suzuki
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Publication number: 20120105271Abstract: A vehicle direction estimation section estimates an absolute direction of a heading direction of a vehicle based on GPS information and vehicle information. A satellite direction estimation section estimates an absolute direction of a target satellite of several satellites for positioning based on corresponding GPS information, and estimates a relative direction of the target satellite with respect to the heading direction based on the estimated absolute direction of the heading direction and the estimated absolute direction of the target satellite. A shield determination section determines a shielded state of the target satellite by determining whether a signal strength of a satellite signal from the target satellite is greater than a threshold value relative to a target partition of several partitions into which a three-dimensional sphere with respect to the heading direction is divided, the target partition which the calculated relative direction of the target satellite belongs to.Type: ApplicationFiled: October 31, 2011Publication date: May 3, 2012Applicant: DENSO CORPORATIONInventors: Yusuke Watanabe, Tatsuya Iwase, Noriyoshi Suzuki
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Publication number: 20110235686Abstract: The present invention provides a position estimation apparatus, mounted at mobile object, including: an acquisition section that acquires transmission source information transmitted from each plural information transmission sources including, information relating to a position of information transmission source, information relating to a distance between information transmission source and mobile object, and information relating to a relative velocity of mobile object with respect to information transmission sources; a trajectory calculation section that calculates, over predetermined duration, a trajectory of mobile object by integrating velocity vectors of mobile object obtained based on transmission source information; and an estimation section that estimates, as a position of mobile object, a position for which trajectory is translated such that a difference between, distances between a plurality of points at different times on trajectory and respective information transmission sources, and acquired distaType: ApplicationFiled: March 9, 2011Publication date: September 29, 2011Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Yoshiko KOJIMA, Junichi MEGURO, Noriyoshi SUZUKI
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Publication number: 20110175208Abstract: An object of the present invention is to provide a semiconductor device including an insulating layer with a high dielectric strength voltage, a low dielectric constant, and low hygroscopicity. Another object of the present invention is to provide an electronic appliance with high performance and high reliability, which uses the semiconductor device. An insulator containing nitrogen, such as silicon oxynitride or silicon nitride oxide, and an insulator containing nitrogen and fluorine, such as silicon oxynitride added with fluorine or silicon nitride oxide added with fluorine, are alternately deposited so that an insulating layer is formed. By sandwiching an insulator containing nitrogen and fluorine between insulators containing nitrogen, the insulator containing nitrogen and fluorine can be prevented from absorbing moisture and thus a dielectric strength voltage can be increased. Further, an insulator contains fluorine so that a dielectric constant can be reduced.Type: ApplicationFiled: April 1, 2011Publication date: July 21, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Satoshi TORIUMI, Noriyoshi SUZUKI
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Patent number: 7955994Abstract: An object of the present invention is to provide a semiconductor device including an insulating layer with a high dielectric strength voltage, a low dielectric constant, and low hygroscopicity. Another object of the present invention is to provide an electronic appliance with high performance and high reliability, which uses the semiconductor device. An insulator containing nitrogen, such as silicon oxynitride or silicon nitride oxide, and an insulator containing nitrogen and fluorine, such as silicon oxynitride added with fluorine or silicon nitride oxide added with fluorine, are alternately deposited so that an insulating layer is formed. By sandwiching an insulator containing nitrogen and fluorine between insulators containing nitrogen, the insulator containing nitrogen and fluorine can be prevented from absorbing moisture and thus a dielectric strength voltage can be increased. Further, an insulator contains fluorine so that a dielectric constant can be reduced.Type: GrantFiled: October 1, 2008Date of Patent: June 7, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Satoshi Toriumi, Noriyoshi Suzuki
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Publication number: 20110102252Abstract: A positioning apparatus includes: a first positioning device for calculating a reception position of a GPS receiver with respect to each combination of satellites based on a pseudo distance from each positioning satellite to the reception position; a component error calculator for calculating an error of at least one component in a calculation result of the first positioning device; a pseudo distance error calculator for obtaining a relation equation between the error of the at least one component and an error of the pseudo distance, and for solving simultaneous equations comprising the relation equation so that the error of the pseudo distance with respect to each positioning satellite is calculated; and a second positioning device for correcting the reception position based on the error of the pseudo distance.Type: ApplicationFiled: October 28, 2010Publication date: May 5, 2011Applicant: DENSO CORPORATIONInventors: Yuusuke WATANABE, Tatsuya IWASE, Noriyoshi SUZUKI
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Publication number: 20110018763Abstract: A GPS receiver outputs pseudo distances each containing a clock bias error. A clock bias and a reception position are calculated based on each of the outputted pseudo distances. A clock drift is calculated based on clock biases at past n points or Doppler information outputted from the GPS receiver. Based on the calculated clock drift, a reference clock bias is estimated using a regression equation or a Kalman filter. Thereby, a position-fix accuracy is evaluated appropriately, without needing external data, such as autonomous navigation information.Type: ApplicationFiled: June 29, 2010Publication date: January 27, 2011Applicant: DENSO CORPORATIONInventors: Yuusuke Watanabe, Tatsuya Iwase, Noriyoshi Suzuki
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Publication number: 20090102027Abstract: An object of the present invention is to provide a semiconductor device including an insulating layer with a high dielectric strength voltage, a low dielectric constant, and low hygroscopicity. Another object of the present invention is to provide an electronic appliance with high performance and high reliability, which uses the semiconductor device. An insulator containing nitrogen, such as silicon oxynitride or silicon nitride oxide, and an insulator containing nitrogen and fluorine, such as silicon oxynitride added with fluorine or silicon nitride oxide added with fluorine, are alternately deposited so that an insulating layer is formed. By sandwiching an insulator containing nitrogen and fluorine between insulators containing nitrogen, the insulator containing nitrogen and fluorine can be prevented from absorbing moisture and thus a dielectric strength voltage can be increased. Further, an insulator contains fluorine so that a dielectric constant can be reduced.Type: ApplicationFiled: October 1, 2008Publication date: April 23, 2009Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Satoshi TORIUMI, Noriyoshi SUZUKI
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Patent number: 7442592Abstract: A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1×1020 to 1×1021/cm3, is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.Type: GrantFiled: September 11, 2006Date of Patent: October 28, 2008Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuhiro Ichijo, Taketomi Asami, Noriyoshi Suzuki
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Patent number: 7384828Abstract: A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1×1020/cm3 to 1×1021/cm3 and containing fluorine at a concentration of 1×1015/cm3 to 1×1017/cm3.Type: GrantFiled: April 30, 2004Date of Patent: June 10, 2008Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Taketomi Asami, Mitsuhiro Ichijo, Noriyoshi Suzuki, Hideto Ohnuma, Masato Yonezawa
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Patent number: 7298785Abstract: A method and apparatus for receiving a modulated signal which consists of N subcarriers containing N-L (L<N) nullcarriers and in which an effective symbol has a length T, and a frequency interval between two adjacent subcarriers of the N subcarriers is 1/T. The method includes estimating an excess delay of a delayed wave, and deciding a part of the symbol regarded as a to-be-used symbol, based on the estimated excess delay, where a length of the decided part is TM/N (M<N) within the effective symbol length T which is decided so as not to contain a part of the symbol suffering from a waveform distortion caused by the delayed wave; and decomposing a complex digital signal which is quadrature-detected at sampling intervals T/N into L subcarriers by use of M samples of the signal within the to-be-used symbol part by means of a matched filter.Type: GrantFiled: July 3, 2002Date of Patent: November 20, 2007Assignee: Kabushiki Kaisha Toyota Chuo KenkyushoInventor: Noriyoshi Suzuki
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Patent number: 7199027Abstract: There is provided a technique for effectively removing a metallic element for promoting crystallization in a semiconductor film with a crystalline structure after the semiconductor film is obtained using the metallic element, to reduce a variation between elements. In a step of forming a gettering site, a plasma CVD method is used and a film formation is conducted using raw gas including monosilane, noble gas, and nitrogen to obtain a semiconductor film which includes the noble gas element at a high concentration, specifically, a concentration of 1×1020/cm3 to 1×1021/cm3 and has an amorphous structure, typically, an amorphous silicon film.Type: GrantFiled: July 9, 2002Date of Patent: April 3, 2007Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuhiro Ichijo, Taketomi Asami, Noriyoshi Suzuki, Shunpei Yamazaki
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Publication number: 20070004109Abstract: A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1×1020 to 1×1021/cm3, is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.Type: ApplicationFiled: September 11, 2006Publication date: January 4, 2007Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuhiro Ichijo, Taketomi Asami, Noriyoshi Suzuki
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Patent number: 7109074Abstract: A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1×1020 to 1×1021/cm3, is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.Type: GrantFiled: October 19, 2004Date of Patent: September 19, 2006Assignee: Semiconductor Engery Laboratory Co., Ltd.Inventors: Mitsuhiro Ichijo, Taketomi Asami, Noriyoshi Suzuki
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Patent number: 7035348Abstract: A receiver configured to receive a plurality of signals k (k=1, 2, . . . , M) allocated in a first frequency band. The receiver includes a frequency conversion section for reallocating the signals k in a second frequency band for sampling by a single AD converter at a sampling frequency fs such that digital data of the sampled signals k are obtained in a third frequency band extending from zero Hz to a frequency represented by fs/2; and a signal extraction section for extracting a target base band signal k from the digital data obtained by the AD conversion section. The frequency conversion section performs the reallocation in such a manner that at least a frequency represented by Jfs/2 (J is an integer) is located between the frequencies of at least two of the signals k and that the sampled signals do not overlap.Type: GrantFiled: May 24, 2002Date of Patent: April 25, 2006Assignee: Kabushiki Kaisha Toyota Chuo KenkyushoInventors: Noriyoshi Suzuki, Tomohisa Harada, Tsutayuki Shibata, Hisanori Uda, Hiroaki Hayashi, Nobuo Itoh
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Publication number: 20050079656Abstract: A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1×1020 to 1×1021/cm3, is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.Type: ApplicationFiled: October 19, 2004Publication date: April 14, 2005Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuhiro Ichijo, Taketomi Asami, Noriyoshi Suzuki
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Publication number: 20050020037Abstract: A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1×1020/cm3 to 1×1021/cm3 and containing fluorine at a concentration of 1×1015/cm3 to 1×1017/cm3.Type: ApplicationFiled: April 30, 2004Publication date: January 27, 2005Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Taketomi Asami, Mitsuhiro Ichijo, Noriyoshi Suzuki, Hideto Ohnuma, Masato Yonezawa
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Patent number: 6821828Abstract: A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1×1020 to 1×1021 /cm3, is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.Type: GrantFiled: September 24, 2002Date of Patent: November 23, 2004Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuhiro Ichijo, Taketomi Asami, Noriyoshi Suzuki
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Publication number: 20040224486Abstract: There is provided a technique for effectively removing a metallic element for promoting crystallization in a semiconductor film with a crystalline structure after the semiconductor film is obtained using the metallic element, to reduce a variation between elements. In a step of forming a gettering site, a plasma CVD method is used and a film formation is conducted using raw gas including monosilane, noble gas, and nitrogen to obtain a semiconductor film which includes the noble gas element at a high concentration, specifically, a concentration of 1×1020/cm3 to 1×1021/cm3 and has an amorphous structure, typically, an amorphous silicon film.Type: ApplicationFiled: July 9, 2002Publication date: November 11, 2004Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Mitsuhiro Ichijo, Taketomi Asami, Noriyoshi Suzuki, Shunpei Yamazaki