Abstract: An enclosure of an electronic computing apparatus allows two electronic computing modules, each having a built-in fan, to be mounted in a perpendicular direction, when the two electronic computing modules are inserted, a shutter is at an intermediate position due to an elastic force of pushing a spring cover in a front surface direction, from push rods corresponding to the two electronic computing modules, and when one of the electronic computing modules is removed, the elastic force of pushing the cover from the push rod on the removal is lost, and the shutter moves, around a rotating mechanism, to a side of a housing space on the removal side and shuts off a flow path in the housing space.

Abstract: A wiring module is attached to a plurality of power storage elements and includes an FPC, a reinforcing plate attached to the FPC, and a protector for holding the FPC and the reinforcing plate. The FPC is electrically connected to electrode terminals of the plurality of power storage elements. The reinforcing plate has an attachment surface to which the FPC is attached. The protector is provided with a mounting recess where the reinforcing plate is mounted. The mounting recess includes a plurality of side surface portions for suppressing displacement of the reinforcing plate in a direction that is perpendicular to a plate thickness direction of the reinforcing plate and an engaging portion for engaging an end portion of the attachment surface and suppressing displacement of the reinforcing plate in the plate thickness direction.

Abstract: A semiconductor device includes a semiconductor element having an Ni—V electrode and a conductor, the semiconductor element and the conductor being bonded via Sn-based lead-free solder. In the semiconductor device, an Sn—V compound layer and an (Ni, Cu)3Sn4 compound layer adjacent to the Sn—V compound are formed adjacent to an interface between the semiconductor element and the Sn-based lead-free solder. A manufacturing method for a semiconductor device according to the present invention includes: causing the Sn-based lead-free solder and the Ni—V electrode to react with each other to form an Sn—V layer and an (Ni, Cu)3Sn4 compound layer; and following formation of the Sn—V layer, leaving an unreacted layer of the Ni—V electrode, the unreacted layer having not reacted with the Sn-based lead-free solder, intact.

Abstract: A wiring module that is attached to a plurality of power storage elements, including: a circuit board; an electric wire; and a protector configured to hold the circuit board and the electric wire, wherein a conductive path is routed on the circuit board, and the conductive path includes a connection land that is electrically connected to an electrode terminal of a power storage element among the plurality of power storage elements, an electric wire land that is connected to one end of the electric wire, and a fuse portion provided between the connection land and the electric wire land.

Abstract: A bio-electrode composition contains (A) an ionic polymer material. The component (A) is a polymer compound containing: a repeating unit-a having a structure selected from the group consisting of salts of ammonium, sodium, potassium, and silver formed with any of fluorosulfonic acid, fluorosulfonimide, and N-carbonyl-fluorosulfonamide; and a repeating unit-b having a side chain with a radical-polymerizable double bond in a structure selected from the group consisting of (meth)acrylate, vinyl ether, and styrene. Thus, the present invention provides: a bio-electrode composition capable of forming a living body contact layer for a bio-electrode to enable signal collection immediately after attachment to skin and prevention of residue on the skin after peeling from the skin; a bio-electrode including a living body contact layer formed of the bio-electrode composition; and a method for manufacturing the bio-electrode.

Abstract: A compound useful as an active ingredient of a pharmaceutical composition for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy is provided. The present inventors have conducted studies on a compound useful as an active ingredient of a pharmaceutical composition for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy, and confirmed that a heteroaryl carboxamide compound has DGK ? (DGKzeta) inhibitory effect, leading to completion of the present invention. The heteroaryl carboxamide compound of the present invention has DGK ? inhibitory effect, and can be used as a therapeutic agent for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy.

Abstract: A display device comprising: a first substrate; a plurality of pixels provided to the first substrate; a light emitting element provided to each of the pixels; a phosphor layer covering at least an upper surface of the light emitting element; a first reflective layer facing a side surface of the light emitting element; and a second reflective layer provided to a side surface of the phosphor layer, separated from the first reflective layer in a normal direction of the first substrate, and disposed farther away from the first substrate than the first reflective layer.

Abstract: A power semiconductor module, which is a semiconductor device, includes a semiconductor element 155 and a lead frame 318 that is disposed to face the semiconductor element 155 and connected to the semiconductor element 155 by a solder material 162. The lead frame 318 has the top surface 331 including a surface facing the semiconductor element 155, and the side surface 334 connected to the peripheral edge portion 333 of the top surface 331 at a predetermined angle with respect to the top surface 331. The top surface of the lead frame 318 includes the solder surface 332 that is in contact with the solder material 162 and the solder resistance surface on which the solder material 162 is less wettable than on the solder surface 332. The solder resistance surface is formed to surround the periphery of the solder surface 332. In this manner, when the semiconductor element and the lead frame are solder-joined in the semiconductor device, the region where the solder wet-spreads is appropriately controlled.

Abstract: An external connection bus bar to be connected to a storage element group having a plurality of storage elements and having an output electrode terminal for outputting electric power to an external circuit includes a main body portion to be connected to the output electrode terminal, an external connection terminal to be connected to an external circuit, and a circuit board connection portion to be soldered to a bus bar land provided on the circuit board. The external connection terminal is provided between the main body portion and the circuit board connection portion.

Abstract: A compound useful as an active ingredient of a pharmaceutical composition for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy is provided. The present inventors have conducted studies on a compound useful as an active ingredient of a pharmaceutical composition for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy, and confirmed that a heteroaryl carboxamide compound has DGK ? (DGKzeta) inhibitory effect, leading to completion of the present invention. The heteroaryl carboxamide compound of the present invention has DGK ? inhibitory effect, and can be used as a therapeutic agent for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy.

Abstract: A semiconductor device comprises: a diode element with a main surface having an electrode and a back surface having another electrode; a heat dissipation base arranged to face the diode element; a Cu lead arranged to face the diode element; a bonding material which bonds the back surface of the diode element and the heat dissipation base to each other; and a bonding material which bonds the main surface of the diode element and the Cu lead to each other. The bonding material provided on the back surface side of the diode element is a lead-free solder having a melting point higher than 260° C. and a thermal expansion coefficient lower than that of a Zn—Al solder; and the bonding material provided on the main surface side of the diode element contains a high-melting-point metal having a melting point higher than 260° C. and a compound of Sn and the high-melting-point metal.

Abstract: A non-transitory storage medium storing a computer program for causing a computer to calculate an action of each object within a field to cause a match between the user and the opponent to proceed, and for providing the game in which the first turn of an offense and the second turn of a defense are switched between the user and the opponent based on a calculation result of the action, wherein the computer program causes the computer to serve as a selection opportunity provision unit that suspends the action of each object in conjunction with switching of the turns and provides an opportunity of selection regarding the match to the user, and a calculation control unit that controls calculation of the match so that the selection by the user is reflected in the calculation of the match within a target period until switching of the turns occurs next.

Abstract: A semiconductor device includes: a semiconductor element; and a first conductor and a second conductor respectively joined to a first surface and a second surface of the semiconductor element via Sn-based solder, in which a Ni-based plated layer is formed on surfaces of the first conductor and the second conductor that oppose the Sn-based solder and on the first surface and the second surface of the semiconductor element, and an interface reaction inhibition layer made of (Cu, Ni)6Sn5 and having a layer thickness of 1.2 to 4.0 ?m is formed at an interface between the Ni-based plated layer and the Sn-based solder.

Abstract: Provided is a method for producing a lithium-containing solution that allows increasing a content rate of lithium in a solution after an eluting step, and suppressing an amount of an eluted solution used in a process after the eluting step, thus suppressing production cost of lithium. A method for producing a lithium-containing solution includes an adsorption step of bringing a lithium adsorbent obtained from lithium manganese oxide in contact with a low lithium-containing solution to obtain post-adsorption lithium manganese oxide, an eluting step of bringing the post-adsorption lithium manganese oxide in contact with an acid-containing solution to obtain an eluted solution, and a manganese oxidation step of oxidating manganese to obtain a lithium-containing solution with a suppressed manganese concentration. The adsorption step, the eluting step, and the manganese oxidation step are performed in this order, and the acid-containing solution includes the eluted solution with acid added.

Abstract: A method for producing lithium hydroxide that allows reducing a load of removing divalent or more ions with an ion-exchange resin is provided. The method for producing lithium hydroxide includes steps (1) to (3) below. (1) a neutralization step: a step of adding an alkali to a first lithium chloride containing liquid to obtain a post-neutralization liquid, (2) an ion-exchange step: a step of bringing the post-neutralization liquid into contact with an ion-exchange resin to obtain a second lithium chloride containing liquid, and (3) a conversion step: a step of electrodialyzing the second lithium chloride containing liquid to obtain a lithium hydroxide containing liquid. Since this producing method allows roughly removing divalent or more ions in the neutralization step, a load of metal removal with the ion-exchange resin is reducible.

Abstract: Provided is a method of molding a composite material by laser metal deposition in which a powder metal material is irradiated with a laser beam while supplying the powder metal material onto a surface of a base material, in which the powder metal material is a mixed powder of an Fe alloy powder and a Cu powder, and a mixing ratio of the Fe alloy powder and the Cu powder is 15% or more and 30% or less by weight % of the Cu powder, and in which the composite material having anisotropy is molded by setting energy of the laser beam to be 9 KJ/g or more and 10 KJ/g or less in a mixed powder ratio.

Abstract: An electronic control device includes: a circuit board; an electronic component; and a bonding portion bonding the circuit board and the electronic component to each other. The bonding portion contains Sn as a main component, Bi and Sb in a total content ratio of 3 wt % or more, and Ag in a content of 3 to 3.9 wt %, with no In.

Abstract: A soldering device capable of shortening operation time of soldering and suppressing solder non-wetting is provided. A soldering device includes: a plurality of tubular solder piece guide tubes which have space therein for a solder piece supplied from a supply port to pass through; a first holding unit which holds the solder piece guide tubes; and a heating unit which heats the first holding unit. Tip end portions of the solder piece guide tubes on a soldering side are arranged on an inner side of the first holding unit.

Abstract: A power semiconductor module, which is a semiconductor device, includes a semiconductor element 155 and a lead frame 318 that is disposed to face the semiconductor element 155 and connected to the semiconductor element 155 by a solder material 162. The lead frame 318 has the top surface 331 including a surface facing the semiconductor element 155, and the side surface 334 connected to the peripheral edge portion 333 of the top surface 331 at a predetermined angle with respect to the top surface 331. The top surface of the lead frame 318 includes the solder surface 332 that is in contact with the solder material 162 and the solder resistance surface on which the solder material 162 is less wettable than on the solder surface 332. The solder resistance surface is formed to surround the periphery of the solder surface 332. In this manner, when the semiconductor element and the lead frame are solder-joined in the semiconductor device, the region where the solder wet-spreads is appropriately controlled.

Abstract: Provided is a sealing structure including a housing that houses a heat generating member or a heat dissipation member thereinside, and a resin that is filled in the housing. In a sectional view, the housing includes a first recess portion in a position facing the heat generating member or the heat dissipation member.