Abstract: In a connecting material of the present invention, a Zn series alloy layer is formed on an outermost surface of an Al series alloy layer. In particular, in the connecting material, an Al content of the Al series alloy layer is 99 to 100 wt. % or a Zn content of the Zn series alloy layer is 90 to 100 wt. %. By using this connecting material, the formation of an Al oxide film on the surface of the connecting material at the time of the connection can be suppressed, and preferable wetness that cannot be obtained with the Zn—Al alloy can be obtained. Further, a high connection reliability can be achieved when an Al series alloy layer is left after the connection, since the soft Al thereof functions as a stress buffer material.

Abstract: An image reproduction apparatus sequences and reproduces multiple moving pictures while eliminating linking and editing operations. A list display unit lists on a screen thumbnails corresponding to each of multiple moving pictures recorded on recording media. A selection unit selects and orders, according to selection operations, multiple thumbnails displayed by the list display unit. Based on the multiple thumbnails selected and ordered by the selection unit, a reproduction unit reproduces the moving pictures corresponding to each of the thumbnails by reproducing them in that order. A display displays moving pictures sequenced in order by the reproduction unit on a screen.

Abstract: An image signal recording/reproduction apparatus having a generating apparatus that generates a dynamic image signal or a still image signal of a subject captured by an imaging apparatus; an operation apparatus that starts recording of the dynamic image signal or the still image signal generated by the generating apparatus; a recording apparatus that records the dynamic image signal or the still image signal into a recording medium through mechanical drive; a reproduction apparatus that reproduces the dynamic image signal or the still image signal recorded at the recording medium through mechanical drive; and a control apparatus that implements control so that the mechanical drive is sustained if the operation apparatus is operated while the dynamic image signal or the still image signal is being reproduced by the reproduction apparatus and so that the recording apparatus records the dynamic image signal or the still image signal in the recording medium.

Abstract: A plurality of NAND cells are arranged in a cell array. In each of the NAND cells, a pair of selection gate transistors is connected in series to a plurality of memory cell transistors. An inter-gate connection trench is formed in an insulating film between layers of stacked gates of the selection gate transistors. The stacked gates are electrically connected to each other. At an end part of the cell array in the row direction, an STI area is formed, and dummy NAND cells are formed at an end part in the row direction. A dummy selection gate transistor is connected in series to a plurality of dummy memory cell transistors. No inter-gate connection trench is present in an insulating film between layers of stacked gates of the dummy selection gate transistor, and the stacked gates of the dummy selection gate transistor are not electrically connected to each other.

Abstract: An image reproduction device reproduces image files, which may include sound information, for example, from recording media. The image reproduction device can reproduce a group of image files following various types of editing formats within the scope of the recording capacity limited by the recording media. The recording media is capable of recording multiple image files and scenario files recorded in a predefined format, which is either the reproduction order or the reproduction style of the image files. A scenario discrimination mechanism takes the scenario files from the recording media and discriminates either the reproduction order or the reproduction style based on the file formats. A reproduction mechanism reproduces the image files read in from the recording media according to either the reproduction order or the reproduction style discriminated by the scenario discrimination mechanism.

Abstract: There is provided a multi-display device capable of displaying the entity of an image even in a case of a large image to be displayed, and capable of changing a horizontally long image screen to a vertically long image screenor vice versa by utilizing no mechanism for rotating, by 90 degrees, a display section and any specific soft therefor. For this purpose, the multi-display device is characterized by arranging a plurality of basic displays each having a function as a display in at least either one of vertical direction and horizontal direction.

Abstract: An image editing apparatus includes a recording medium for recording an image file and a scenario file, wherein the scenario file is formed by recording a replay order or a replay condition of the image file with a predetermined file format, a scenario evaluating circuit for reading the scenario file from the recording medium and evaluating the replay order or the replay condition, an editor for editing the image file in response to an evaluation by the scenario evaluating circuit, and a recorder for recording the image file on the recording medium.

Abstract: A semiconductor device which includes a semiconductor chip; an electrically conductive base electrode bonded to the lower surface of the chip by a first bonding member; an electrically conductive lead electrode bonded to the upper surface of the chip by a second bonding member; and a first stress relief member for reducing stress developed in the first bonding member due to the difference in thermal expansion between the chip and the base electrode. Both the base electrode and the first stress relief member are in direct contact with the lower surface of the first bonding member. A protrusion is formed upstanding from the base electrode in direct contact with the first bonding member, and the first stress relief member surrounds a circumferential portion of the protrusion.

Abstract: An image processing apparatus provided with a display unit for displaying an operation picture, showing control indicia (e.g., icons) corresponding to multiple image processing functions, is operated to display the operation picture on an external display device. The operator selects one of the indicia shown on the external display device by operating an input device, such as touch screen of the apparatus or a remote control, to indicate the position of the desired one of the indicia. The operator can thereby quickly and reliably select an image processing function to be executed, without any need to view an operation picture on the display unit when making the selection.

Abstract: When connecting with a conventional Zn/Al/Zn cladding material, thickness of a connecting part needs to be less than double an existing high-lead solder (about 100 ?m) in order to make heat resistance in the connecting part at least equivalent to a level of the existing solder. Moreover, thickness of an Al layer needs to make as thick as possible in order to fully exhibit stress relaxation performance of the Al layer. Provided is a semiconductor device including a semiconductor element, a frame, and a connecting part which connects the semiconductor element and the frame to each other, in which an interface between the connecting part and the semiconductor element and an interface between the connecting part and the frame respectively have the area of Al oxide film which is more than 0% and less than 5% of entire area of the respective interfaces.

Abstract: To actualize a reduction in the on-resistance of a small surface mounted package having a power MOSFET sealed therein. A silicon chip is mounted on a die pad portion integrated with leads configuring a drain lead. The silicon chip has, on the main surface thereof, a source pad and a gate pad. The backside of the silicon chip configures a drain of a power MOSFET and bonded to the upper surface of a die pad portion via an Ag paste. A lead configuring a source lead is electrically coupled to the source pad via an Al ribbon, while a lead configuring a gate lead is electrically coupled to the gate pad via an Au wire.

Abstract: In a connecting material of the present invention, a Zn series alloy layer is formed on an outermost surface of an Al series alloy layer. In particular, in the connecting material, an Al content of the Al series alloy layer is 99 to 100 wt. % or a Zn content of the Zn series alloy layer is 90 to 100 wt. %. By using this connecting material, the formation of an Al oxide film on the surface of the connecting material at the time of the connection can be suppressed, and preferable wetness that cannot be obtained with the Zn—Al alloy can be obtained. Further, when an Al series alloy layer is left after the connection, since the soft Al functions as a stress buffer material, the high connection reliability can be achieved.

Abstract: An electronic camera having a plurality of functions including capturing and recording images is provided. The electronic camera includes an operation input unit for inputting external operations that designate corresponding functions of the camera to be performed, an image pickup unit for capturing the image of an object, and a recorder for recording the image captured by the image pickup unit. The electronic camera further includes a playback unit for at least playing back image information that is recorded on the recording medium and a mode selector for selecting one operation mode of the camera from a plurality of available operation modes that include an operation explanation mode. If the operation explanation mode is selected at the mode selector, the playback unit plays back an operation guide that is pre-stored in a memory, the operation guide explaining at least one of the camera operations and functions thereof.

Abstract: A semiconductor device includes a semiconductor element, a support member bonded to a first surface of the semiconductor element with a first bonding material and a lead electrode bonded to a second surface of the semiconductor element supported on the support member with a second bonding material, and further including a method of producing the semiconductor device. Respective connecting parts of the support member and the lead electrode are Ni-plated and each of the first and the second bonding material is a Sn solder having a Cu6Sn5 content greater than a eutectic content.

Abstract: A semiconductor device includes a semiconductor element, a support member bonded to a first surface of the semiconductor element with a first bonding material and a lead electrode bonded to a second surface of the semiconductor element supported on the support member with a second bonding material, and further including a method of producing the semiconductor device. Respective connecting parts of the support member and the lead electrode are Ni-plated and each of the first and the second bonding material is a Sn solder having a Cu6Sn5 content greater than a eutectic content.

Abstract: A content distribution system which assures reliability of content is provided. Permitted-user information corresponding to a user who is permitted to use content to be distributed is associated with the content. In the case where user specific information which specifies a user and the permitted-user information do not have a predetermined relation, a user terminal transmits the user specific information and the permitted-user information to a server. The server generates user-related information in which the received user specific information is set as a distribution destination and the permitted-user information is set as a distributor, generates new permitted-user information so as to have the predetermined relation with the user specific information, and provides the new permitted-user information to the user terminal. The user terminal which obtains the new permitted-user information changes the permitted-user information to the new permitted-user information.

Abstract: An object of the present invention is to provide, at low costs, an environmental friendly bonding material for a semiconductor, having sustained bonding reliability even when used at a temperature as high as 200° C. or higher for a long period of time, the semiconductor device having a semiconductor element, a supporting electrode body bonded to a first face of the semiconductor element via a first bonding member, and a lead electrode body bonded to a second face of the semiconductor element supported by the supporting electrode body via a second bonding member, the semiconductor device having a Ni-based plating layer and an intermetallic compound layer containing at least one of Cu6Sn5 and (Cu,Ni)6Sn5 compounds at an interface between the supporting electrode body and the first bonding member, and having a Ni-based plating layer and an intermetallic compound layer containing at least one of Cu6Sn5 and (Cu,Ni)6Sn5 compounds at an interface between the lead electrode body and the second bonding member.

Abstract: An image processing apparatus provided with a display unit for displaying an operation picture, showing control indicia (e.g., icons) corresponding to multiple image processing functions, is operated to display the operation picture on an external display device. The operator selects one of the indicia shown on the external display device by operating an input device, such as touch screen of the apparatus or a remote control, to indicate the position of the desired one of the indicia. The operator can thereby quickly and reliably select an image processing function to be executed, without any need to view an operation picture on the display unit when making the selection.

Abstract: In a resin granulating apparatus of the present invention, a bracket extending in the outward radial direction over an outer peripheral surface of a sleeve is provided for the sleeve for rotatably supporting a cutter shaft of a cutter for shearing a material extruded from a die. Stopper means cooperating with the bracket to regulate movement of the sleeve toward the die and moving a regulation position in the axial direction is provided on the radially outer side over an outer diameter of the sleeve. With such a configuration, installation space is compactified so as to additionally provide the stopper means in the existing facilities, and a position of the cutter relative to a die surface is precisely adjusted so as to stably produce a pellet of a best shape.

Abstract: A plurality of NAND cells are arranged in a cell array. In each of the NAND cells, a pair of selection gate transistors is connected in series to a plurality of memory cell transistors. An inter-gate connection trench is formed in an insulating film between layers of stacked gates of the selection gate transistors. The stacked gates are electrically connected to each other. At an end part of the cell array in the row direction, an STI area is formed, and dummy NAND cells are formed at an end part in the row direction. A dummy selection gate transistor is connected in series to a plurality of dummy memory cell transistors. No inter-gate connection trench is present in an insulating film between layers of stacked gates of the dummy selection gate transistor, and the stacked gates of the dummy selection gate transistor are not electrically connected to each other.