Abstract: Air-in-line sensor systems and methods of using same are provided. The system includes an adapter (60) including first and second cylindrical portions defining a fluid flow channel, the first cylindrical portion comprising two adjacent wedge-shaped protrusions (68). Each wedge-shaped protrusion is infrared transmittive and defines an outer surface and an inner surface. The system further includes a tube and an infrared reflective sensor having an infrared light emitter (42,52) and an infrared light detector (44,54). The infrared light emitter and the infrared light detector are positioned at or near an adapter so that an infrared light can be transmitted to the adapter and at least a portion of the infrared light reflected off the adapter can be detected by the infrared light detector.

Abstract: The invention relates to an energy efficient, environmentally favourable process for the preparation of brominated rubbers, in particular bromobutyl rubber, that uses a common medium for both solution polymerization and subsequent bromination of the rubber and which further exhibits an enhanced bromine usage due to the use of a oxidizing agent. More particularly, the invention relates to a process that employs a common aliphatic medium for both solution polymerization and bromination of rubber in the presence of a brominating agent and an oxidizing agent with intermediate removal of un-reacted monomers.

Abstract: Air-in-line sensor systems and methods of using same are provided. In a general embodiment, the present disclosure provides an adapter including first and second cylindrical portions defining a fluid flow channel, the first cylindrical portion comprising two adjacent wedge-shaped protrusions. Each wedge-shaped protrusion is infrared transmittive and defines an outer surface and an inner surface. In another embodiment, an air-in-line sensor device includes a tube and an infrared reflective sensor having an infrared light emitter and an infrared light detector. The infrared light emitter and the infrared light detector are positioned at or near an adapter so that an infrared light can be transmitted to the adapter and at least a portion of the infrared light reflected off the adapter can be detected by the infrared light detector.

Abstract: The invention relates to 21-keto triterpene compounds of formula (I): wherein R1, X, and Y are as defined herein, and pharmaceutically acceptable salts and solvates thereof. These compounds exhibit significant anti-HIV activity. Thus, the invention also relates to methods for prevention or treatment of HIV infections by administering therapeutically effective amounts of a compound of formula (I), or a pharmaceutically acceptable salt or solvate thereof to a subject in need of such treatment.

Abstract: The invention relates to 21-keto triterpene compounds of formula (I): wherein R1, X, and Y are as defined herein, and pharmaceutically acceptable salts and solvates thereof. These compounds exhibit significant anti-HIV activity. Thus, the invention also relates to methods for prevention or treatment of HIV infections by administering therapeutically effective amounts of a compound of formula (I), or a pharmaceutically acceptable salt or solvate thereof to a subject in need of such treatment.

Abstract: The invention relates to 17? lupane derivatives of formula (I): wherein R1 and X are as defined herein, and pharmaceutically acceptable salts and solvates thereof. These compounds exhibit significant anti-HIV activity. Thus, the invention also relates to methods for prevention or treatment of HIV infection by administering therapeutically effective amounts of a compound of formula (I), or a pharmaceutically acceptable salt or solvate thereof to a subject in need of such treatment.

Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).

Abstract: An electrochromic device includes a first conductive layer, a single-layer or dual-layer ion conductor layer, and a second conductive layer. The layers are deposited using PVD, CVD, PECVD, atomic layer deposition, pulsed laser deposition, plating, or sol-gel techniques.

Abstract: An electrochromic device includes a first conductive layer, a dual-layer ion conductor layer, and a second conductive layer. The first ion conductor layer and the second ion conductor layer are formed from different materials and/or by different processes. The layers are deposited using PVD, CVD, or plating techniques.

Abstract: A system is disclosed and claimed for debugging Ethernet adapters and Ethernet adapter device drivers by automatically monitoring Ethernet adapter functionality and automatically turning on debug traces upon detecting incorrect Ethernet adapter functionality. An embodiment maintains a counter representing the number of incorrect Ethernet adapter functionality events minus the number of correct Ethernet adapter functionality events. If the counter reaches a threshold value, the Ethernet adapter device driver automatically enables debug traces for storing functionality information to a trace table.

Abstract: An electrochromic device includes a first conductive layer, a single-layer or dual-layer ion conductor layer, and a second conductive layer. The layers are deposited using PVD, CVD, PECVD, atomic layer deposition, pulsed laser deposition, plating, or sol-gel techniques.

Abstract: An electrochromic device includes a first conductive layer, a dual-layer ion conductor layer, and a second conductive layer. The first ion conductor layer and the second ion conductor layer are formed from different materials and/or by different processes. The layers are deposited using PVD, CVD, or plating techniques.

Abstract: A computer implemented method, apparatus, and computer usable program code for managing buffers. A number of buffers present in a pool of buffers assigned to a network device driver are monitored, wherein the buffers in the pool of buffers are used to process packets of data for transmission onto a network. A request is denied from a transport layer for a buffer from the pool of buffers if the number of buffers falls below a threshold level, wherein at least one buffer is present in a buffer pool if the number of buffers falls below the threshold level.

Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).

Abstract: A method and system for providing a magnetic element are described. The method and system include providing a single pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. The free layer is a simple free layer. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.

Abstract: Disclosed are compounds of the formula wherein R1 is hydrogen or an acyl group having 1 to 16 carbon atoms; R2 is a purine or pyrimidine base or an analogue or derivative thereof; Z is O, S, S?O or SO2; and pharmaceutically acceptable derivatives thereof. Also described are processes for and intermediates of use in their preparation, pharmaceutical compositions containing these compounds, and the use of these compounds in the antiviral treatment of mammals.

Abstract: Hydrogenated copolymers of an unsaturated nitrile, butadiene and isoprene, wherein the molar ratio of butadiene to isoprene is less than 3:1, display valuable low temperature properties.

Abstract: The present invention is directed to a method, and associated apparatus, for modifying a radio frequency (RF) response. An exemplary method includes establishing an RF response in a signal path of a device; and controlling an actuator to structurally alter the signal path and dynamically change an impedance of the signal path to alter the RF response.

Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-of-plane demagnetization energy.