Abstract: A method and system for providing a magnetic element is disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.

Abstract: A system is disclosed and claimed for debugging Ethernet adapters and Ethernet adapter device drivers by automatically monitoring Ethernet adapter functionality and automatically turning on debug traces upon detecting incorrect Ethernet adapter functionality. An embodiment maintains a counter representing the number of incorrect Ethernet adapter functionality events minus the number of correct Ethernet adapter functionality events. If the counter reaches a threshold value, the Ethernet adapter device driver automatically enables debug traces for storing functionality information to a trace table.

Abstract: A method and system for providing a magnetic element is disclosed. The method and system include providing a free layer, a spacer layer, and a pinned layer. The free layer is ferromagnetic and has a free layer magnetization. The spacer layer is nonmagnetic and resides between the pinned and free layers. The pinned layer includes first and second ferromagnetic layers having first and second magnetizations, a nonmagnetic spacer layer, and a spin depolarization layer. Residing between the first and second ferromagnetic layers, the nonmagnetic spacer layer is conductive and promotes antiparallel orientations between the first and second magnetizations. The spin depolarization layer is configured to depolarize at least a portion of a plurality of electrons passing through it. The magnetic element is also configured to allow the free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

Abstract: A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction, due to spin transfer when a write current is passed through the magnetic element.

Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-of-plane demagnetization energy.

Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).

Abstract: The present invention presents a method for fabricating coil elements for magnetic write heads. A coil pattern is formed on a substrate using photolithographic techniques. The substrate is etched using reactive ion etching, creating a coil-shaped trench in the substrate. Thin film seed layers are deposited using ion beam deposition. The substrate is electroplated with metal filling the trenches with metal. The substrate is chemical mechanical polished to remove excess metal and planarize the air bearing surface of the write head.

Abstract: A method and system for providing and magnetic element is disclosed. In one aspect, the magnetic element includes at least a pinned layer, a free layer, and a current confined layer residing between the pinned layer and the free layer. The pinned layer is ferromagnetic and has a first magnetization. The current confined layer has at least one channel in an insulating matrix. The channel(s) are conductive and extend through the current confined layer. The free layer is ferromagnetic and has a second magnetization. The pinned layer, the free layer, and the current confined layer are configured to allow the magnetization of the free layer to be switched using spin transfer. The magnetic element may also include other layers, including layers for spin valve(s), spin tunneling junction(s), dual spin valve(s), dual spin tunneling junction(s), and dual spin valve/tunnel structure(s).

Abstract: A method and system for providing a magnetic element capable of storing multiple bits is disclosed. The method and system include providing first pinned layer, a first nonmagnetic layer, a first free layer, a connecting layer, a second pinned layer, a second nonmagetic layer and a second free layer. The first pinned layer is ferromagnetic and has a first pinned layer magnetization pinned in a first direction. The first nonmagnetic layer resides between the first pinned layer and the first free layer. The first free layer being ferromagnetic and has a first free layer magnetization. The second pinned layer is ferromagnetic and has a second pinned layer magnetization pinned in a second direction. The connecting layer resides between the second pinned layer and the first free layer. The second nonmagnetic layer resides between the second pinned layer and the second free layer. The second free layer being ferromagnetic and having a second free layer magnetization.

Abstract: A method and system for providing a magnetic element is disclosed. The method and system include providing a ferromagnetic pinned layer, providing a free layer, and providing a spacer layer between the pinned layer and the free layer. The pinned layer and free layer are ferromagnetic and have a pinned layer magnetization and a free layer magnetization, respectively. The spacer layer is nonmagnetic. In one aspect, the free layer is configured to have an increased magnetic damping constant. In another aspect, the method and system also include providing a second pinned layer and a second spacer layer between the free layer and the second pinned layer. In this aspect, the first pinned layer and/or the second pinned layer are configured such that a forward torque and a reflected torque due to a current driven through the magnetic element in a current-perpendicular-to-plane configuration are substantially equal and opposite.

Abstract: A method and apparatus for providing a computer system having a plurality of logical partitions with a virtual operator panel is disclosed. The method and apparatus include displaying a plurality of operator panels on a single console corresponding to each of the logical partitions, and providing a buffer for each logical partition. The status codes from each of the logical partitions are then written directly to the corresponding buffer. To display the status codes of one of the logical partitions, the status code from the buffer corresponding the logical partition is read and sent to the corresponding operator panel for display.

Abstract: Hydrogenated copolymers of an unsaturated nitrile, butadiene and isoprene, wherein the molar ratio of butadiene to isoprene is less than 3:1, display valuable low temperature properties.

Abstract: The present invention provides a process of hydrogenating a nitrile copolymer rubber, which comprises subjecting the copolymer to hydrogenation in the presence of a hydrogenation catalyst, a co-catalyst, and a proton acceptor that is non-coordinating with the metal-complex catalyst.

Abstract: A process is provided for the removal of iron- and rhodium-containing residues from a solution of hydrogenated nitrile rubber. The process utilizes an ion-exchange resin having thiourea functional groups. Further, the resin is both macroporour and monodispersed. The process removes both rhodium and iron from viscous rubber solutions. In a preferred embodiment, the process is carried out in an ion-exchange column.

Abstract: Disclosed herein is a process for the production of hydrogenated nitrile rubber. The appearance of corrosion in the plant equipment in which hydrogenated nitrile rubber is produced is due to the unexpected presence of relatively large amounts of HCl, generated, surprisingly, by the hydro-dehalogenation of the monochlorobenzene solvent under the reaction conditions. The addition of a compatible weakly basic additive, such as Epoxidized Soy Bean Oil (ESBO), to the reaction mixture has alleviated this serious problem.

Abstract: A method, system and computer program product are provided for detecting the presence of devices, particularly hot plug devices, connected to a bus both during start-up of a computer system and while the system is running. At start-up, and periodically thereafter, all possible device connections are polled by microprocessors, called sub-bus controllers, which include logic for generating a map of components present on each bus. Each map is accessible by the master bus controller. During system run-time, periodic polling, may be continuous thereby providing a real time device status map for every available bus connection.

Abstract: The present invention provides a process of hydrogenating a nitrile copolymer rubber, which comprises subjecting the copolymer to hydrogenation in the presence of a hydrogenation catalyst, a co-catalyst, and a proton acceptor that is non-coordinating with the metal-complex catalyst.

Abstract: Disclosed herein is a process for the production of hydrogenated nitrile rubber. The appearance of corrosion in the plant equipment in which hydrogenated nitrile rubber is produced is due to the unexpected presence of relatively large amounts of HCl, generated, surprisingly, by the hydro-dehalogenation of the monochlorobenzene solvent under the reaction conditions. The addition of a compatible weakly basic additive, such as Epoxidized Soy Bean Oil (ESBO), to the reaction mixture has alleviated this serious problem.

Abstract: A method and apparatus for providing a computer system having a plurality of logical partitions with a virtual operator panel is disclosed. The method and apparatus include displaying a plurality of operator panels on a single console corresponding to each of the logical partitions, and providing a buffer for each logical partition. The status codes from each of the logical partitions are then written directly to the corresponding buffer. To display the status codes of one of the logical partitions, the status code from the buffer corresponding the logical partition is read and sent to the corresponding operator panel for display.

Abstract: A process is provided for the removal of iron- and rhodium-containing residues from a solution of hydrogenated nitrile rubber. The process utilizes an ion-exchange resin having thiourea functional groups. Further, the resin is both macroporour and monodispersed. The process removes both rhodium and iron from viscous rubber solutions. In a preferred embodiment, the process is carried out in an ion-exchange column.