Abstract: A semiconductor memory system includes a semiconductor memory chip in which data, command, and address signals are transmitted serially between a memory controller and the semiconductor memory chip in signal frames in correspondence with a predetermined protocol. In a receive signal path within the semiconductor memory chip, a frame decoder for decoding the signal frames is arranged following a receiving interface device, and between the frame decoder and a memory core, an intermediate storage device is arranged which has a cell array including a multiplicity of memory cells, and an addressing and selector circuit to which address signals decoded by the frame decoder from command and/or write signal frames supplied by the memory controller are applied, for addressing the cell array and for selecting the write data to be written into the cell array and to be read out of the cell array.

Abstract: A circuit includes a data conversion circuit including a first input configured to receive a first serial data stream, a second input configured to receive a second serial data stream, and a third input configured to receive a third serial data stream. A first sampling circuit is coupled to the first, second, and third inputs and is configured to sample the first to third data streams based on a plurality of clock signals and to generate a corresponding plurality of first sampled signals. A second sampling circuit is configured to sample the plurality of first sampled signals based on a further clock signal. The further clock signal has a clock frequency different from a clock frequency underlying the first to third serial data streams.

Abstract: A circuit includes a data conversion circuit including a first input configured to receive a first serial data stream, a second input configured to receive a second serial data stream, and a third input configured to receive a third serial data stream. A first sampling circuit is coupled to the first, second, and third inputs and is configured to sample the first to third data streams based on a plurality of clock signals and to generate a corresponding plurality of first sampled signals. A second sampling circuit is configured to sample the plurality of first sampled signals based on a further clock signal. The further clock signal has a clock frequency different from a clock frequency underlying the first to third serial data streams.

Abstract: In a method of testing a memory device, an output path of the memory device and an input path of the memory device are coupled to each other. A signal is transmitted, controlled by a test pattern, via the output path of the memory device. The signal is received via the input path of the memory device and evaluated.

Abstract: In a semiconductor memory system, the memory chips are linked to a memory module in a shared loop forward architecture and connected in a point-to-point connection to a memory controller. Each memory chip includes a high-speed interface circuit including: a read and write data/command-and-address signal re-driver/transmitter path for re-driving serial read data and write data/command-and-address signals not destined for the semiconductor memory chip; and a main signal path which includes a serial-to-parallel converter and a synchronizer for serial-to-parallel converting and synchronizing with a reference clock signal write data/command-and-address signals destined for the semiconductor memory chip as well as a parallel-to-serial converter for parallel-to-serial converting read data signals read from a memory core of the memory chips, and a switch for inserting the parallel-to-serial converted read data signals into the re-driver/transmitter path.

Abstract: A method for transferring data into a data memory using a data protocol is presented. The data memory is an error correction code (ECC) memory or a non-error correction code memory. The data protocol has different frames. When data are written into an ECC memory, the protocol includes a data mask frame in which the data mask bits are replaced by ECC bits. The method is designed such that ECC and non-ECC DRAMs can be established with the same protocol and at least a similar architecture.

Abstract: A method transmits configuration data in a memory arrangement. The method includes controlling, with a control unit of the memory arrangement, data transmissions via a configuration data bus in the memory arrangement, the controlling including controlling transmitting configuration data of the memory arrangement for storing in at least two register units of the memory arrangement via the configuration data bus from the control unit to each of the at least two register units. The method includes storing, in the at least two register units, the configuration data. The at least two register units have a same bus address identifying the at least two register units on the configuration data bus. The method includes requesting, with the control unit, configuration data stored in the at least two register units. The method includes transmitting, under control of the control unit, the stored configuration data via the configuration data bus from only one of the at least two register units to the control unit.

Abstract: A method processes data in a memory arrangement. The method includes receiving and transmitting the data from the memory arrangement in the form of data packets according to a predefined protocol. The method includes distributing each received data packet to at least two separate data packet processing units. Each data packet processing unit is coupled to a portion of memory cells of the memory arrangement. The method includes processing, at each data packet processing unit, parts of the received data packets that relate to the portion of the memory cells the data packet processing unit is coupled to. The method includes generating a data packet to be transmitted including setting up, with each data packet processing unit, a part of the data packet to be transmitted.

Abstract: The invention relates to a controller for generating control signals (evload_o, odload_o, st_chgclk_o, clk_o , clkorfiford_i) synchronous with a continuous clock signal (clk_hr_i) input to it for a device (1) to be controlled synchronously with the clock signal (clk_hr_i), wherein the controller (SE) has: register means for registering at least one set signal (st_load_i, st_fiford_i), comprising a plurality of bit positions, counting means for counting edges of the clock signal (clk_hr_i) depending on one or a plurality of set signals respectively registered in the register means, and synchronization and output means for synchronizing a value counted by the counting means with the clock signal (clk_hr_i) and the registered set signal and outputting at least one of the control signals, wherein the register means, the counting means and the synchronization and output means are configured and connected to one another in such a way that the output control signal(s), depending on the respectively registered set si

Abstract: A semiconductor memory chip in which signals are transferred as serial signal frames includes a frame decoder providing an interface between a memory core and a reception interface. The frame decoder includes a command type decoder for decoding the types of commands included in frames according to the decoded type of the commands, a memory command evaluator/generator for scheduling and preparing single commands for the core, an intermediate data buffer command evaluator/generator for scheduling and preparing control signals for an intermediate data buffer, and a system command evaluator/generator for preparing and scheduling system commands. These system commands provide timing parameters to ensure time intervals between consecutive commands within one frame or between frames and are stored in a system mode register. The operation of the frame decoder is edge-synchronized by a frame clock or a synchronization decoder clock signal which is phase-aligned to that frame clock signal.

Abstract: A semiconductor memory chip includes: a reception interface section for receiving external data, command, and address signals in form of serial signal frames; an intermediate data buffer for intermediately storing write data and, optionally, write data mask bits to be written to a memory cell array; a memory core having a bank organized memory cell array; a decoder section for decoding an address derived from a signal frame received from the reception interface section for writing/reading data in/from one or more memory banks of the memory cell array in accordance with a write/read command within one or more received signal frames; and a frame decoder provided as an interface between the reception interface section and the memory core for decoding one or more commands included in one or more frames and outputting data addresses, command, and read/write access indication signals to the memory core and to the intermediate data buffer.

Abstract: A method of refreshing the content of a memory cell of a memory arrangement includes selectively controlling a refreshing device of the memory arrangement via an interface of the memory arrangement or by an internal control device of the memory arrangement to refresh the content of the memory arrangement.

Abstract: A device configured to parallelize N serial digital input signals includes at least M bit storage devices configured to each respectively store one bit of the N serial digital input signals and provide the one stored bit as a bit of a parallel digital output signal with a bit width M. M is greater than N and N is greater than 1. Symbols with a bit width M are transmitted via the N serial digital input signals such that each of the N serial digital input signals transmits a fraction of the respective symbol. A control device is configured to drive the plurality of bit storage devices cyclically such that at least M bits of the serial digital input signals, which belong to one symbol, are stored in the bit storage devices within a cycle.

Abstract: A memory system and method is discussed. The memory system includes a memory controller and at least one memory module on which a certain number of semiconductor memory chips and connecting lines are arranged in a respectively specified topology. The connecting lines include first connecting lines forming transfer channels for a protocol based transfer of data and command signal streams from the memory controller to at least one of the memory chips on the memory module and from there to the memory controller, respectively. Second connecting lines are routed separately from the memory controller directly to at least one of the memory chips on the memory module for transferring select information to the at least one memory chip separately from the data and command signal streams.

Abstract: A semiconductor memory module includes a plurality of semiconductor memory chips and bus signal lines that supply an incoming clock signal and incoming command and address signals to the semiconductor memory chips. A clock signal regeneration circuit and a register circuit are arranged on the semiconductor memory module in a common chip packing connected to the bus signal lines. The clock signal regeneration circuit and the register circuit respectively condition the incoming clock signal and temporarily store the incoming command and address signals, respectively multiply the conditioned clock signal and the temporarily stored command and address signals by a factor of 1:X, and respectively supply to the semiconductor memory chips the conditioned clock signal and the temporarily stored command and address signals.

Abstract: An integrated memory device includes a memory core having a plurality of memory cells and a group of terminals for communication between the memory device and an external electronic device. A data buffer temporarily stores data. The data buffer is coupled to the group of terminals and to the memory core. The data buffer includes a plurality of data buffer sections. Each data buffer section is capable of temporarily storing at least one data frame and being accessible by a respective data buffer address. A data buffer control unit is also provided.

Abstract: A synchronous signal generator is provided that contains a first and second counting and delay circuit, which both are in a subhierarchical position with respect to a reset signal synchronization/delay circuit. The reset signal synchronization/delay circuit and the first and second counting and delay circuit are triggered by a basic clock signal or a first clock signal derived therefrom to be identical in frequency and phase, and contain counting means whose initial and final counting state are adjustable in order to set, in a clocked fashion, the temporal positions of a first and second load signal that are output by the first counting and delay circuit as well as of a FIFO read clock signal that is output by the second counting and delay circuit and thus adapt them to the temporal requirements of a semiconductor memory system containing the synchronous signal generator.

Abstract: The present invention relates to a method and apparatus for generating an output signal in dependence on a phase difference between two periodic signals. The present invention is particularly useful in phase locked loops and delay locked loops, in which a controllable oscillator or a controllable delay device is controlled on the basis of the phase difference determined by means of phase detection, in such a way that a control signal can be obtained, the phase lag or frequency of which has a firm relationship to the reference signal.

Abstract: A memory device comprising a memory cell array; an input circuit providing drive signals to the memory cell array dependent on externally received command data; an output buffer buffering data read out from the memory cell array; and a timer driving the output buffer such that the buffered data are provided at an output after an adjustable time interval has elapsed, the adjustable time interval beginning with the provision of the drive signals.

Abstract: A control unit is set up to generate and output periodic clock signals, that are in sync with and at the same frequency as a periodic basic clock that is input into it, and periodic control signals, that are likewise in sync with the basic clock, and to turn on/turn off output of at least the clock signal in reaction to an activation/deactivation signal, which is routed to it externally, to a synchronous parallel/serial converter executing synchronization and serialization of a parallel data signal with the basic clock. Whereas output of the clock signal and optionally of the control signals are turned off, immediately after the activation/deactivation signal has assumed its deactivation state, the control unit is able to synchronize turning control signals on again, when the activation/deactivation signal has assumed its activation state.