Abstract: A positioning system comprising a mounting assembly arranged to move a positioning device via a magnetic coupling interaction between the mounting assembly and the positioning device. The positioning device is configured to limit the spread of flux away from the device.

Abstract: A positioning system comprising a mounting assembly arranged to move a positioning device via a magnetic coupling interaction between the mounting assembly and the positioning device. The positioning device is configured to limit the spread of flux away from the device.

Abstract: A integrated circuit device with a polymer memory array includes active circuits formed in lower layers of a multi-level interconnect structure and a semiconductor substrate and also includes an array of polymer memory cells formed in an upper interconnect level having a plurality of cell node electrodes and source line electrodes for the polymer memory array, each polymer memory cell including a passive layer having at least one conductivity-facilitating compound that is formed on top and sidewall surfaces of a source line electrode, and an active layer having an impedance state that can change that is formed on top and sidewall surfaces of an adjacent cell node electrode with sufficient thickness to make direct physical contact with the passive layer.

Abstract: A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory.

Abstract: A method, system and apparatus for sharing internal power supplies in integrated circuit devices is described. A multiple device integrated circuit 200 including multiple integrated circuits 202-205 each having internal power supplies is contained in an enclosure 201. Integrated circuits 202-205 are described showing how to make external connection to internal power supplies. Connections 208-212 are provided to the internal power supplies of each of devices 202-205. Another embodiment 500 of the system provides for disablement of regulators in multiple integrated circuits 502, 503, and 504 by another integrated circuit 501 for power consumption reduction. The method FIG. 6 includes providing devices and connecting the internal power supplies together. An integrated circuit 501 with a power supply 400 adapted to the system and method with additional circuitry 308, 404 and 402 for disabling a regulator 306 is described.

Abstract: In an integrated circuit (IC) adapted for use in a stack of interconnected ICs, interrupted through-silicon-vias (TSVs) are provided in addition to uninterrupted TSVs. The interrupted TSVs provide signal paths other than common parallel paths between the ICs of the stack. This permits IC identification schemes and other functionalities to be implemented using TSVs, without requiring angular rotation of alternate ICs of the stack.

Abstract: A semiconductor device has a plurality of stacked semiconductor dice mounted on a substrate. Each die has similar dimensions. Each die has a first plurality of bonding pads arranged along a bonding edge of the die. A first group of the dice are mounted to the substrate with the bonding edge oriented in a first direction. A second group of the dice are mounted to the substrate with the bonding edge oriented in a second direction opposite the first direction. Each die is laterally offset in the second direction relative to the remaining dice by a respective lateral offset distance such that the bonding pads of each die are not disposed between the substrate and any portion of the remaining dice in a direction perpendicular to the substrate. A plurality of bonding wires connects the bonding pads to the substrate. A method of manufacturing a semiconductor device is also disclosed.

Abstract: A system includes a memory controller and a plurality of semiconductor devices that are series-connected. Each of the devices has memory core for storing data. The memory controller provides a clock signal for synchronizing the operations of the devices. Each device includes a phase-locked loop (PLL) that is selectively enabled or disabled by a PLL enable signal. In each group, the PLLs of a selected number of devices are enabled by PLL enable signals and the other devices are disabled. The enabled PLL provides a plurality of reproduced clock signals with a phase shift of a multiple of 90° in response to an input clock signal. The data transfer is synchronized with at least one of the reproduced clock signals. In the devices of disabled PLLs, the data transfer is synchronized with the input clock signal. The enabled PLL and disabled PLL cause the devices to be the source and the common synchronous clocking, respectively. The devices can be grouped.

Abstract: A positioning system comprising a mounting assembly arranged to move a positioning device via a magnetic coupling interaction between the mounting assembly and the positioning device. The positioning device is configured to limit the spread of flux away from the device.

Abstract: A semiconductor memory device including a plurality of memory die and a controller die. The controller die is connected to an internal control bus. The controller die is configured to provide to a selected one of the memory die an internal read command responsive to an external read command. The selected memory die is configured to provide read data to the controller in response to the internal read command; wherein latency between receipt by the controller die of the external read command and receipt of the read data from the selected memory die differs for at least two of the memory die when selected as the selected memory die.

Abstract: A system includes a memory controller and a plurality of semiconductor devices that are series-connected. Each of the devices has memory core for storing data. The memory controller provides a clock signal for synchronizing the operations of the devices. Each device includes a phase-locked loop (PLL) that is selectively enabled or disabled by a PLL enable signal. In each group, the PLLs of a selected number of devices are enabled by PLL enable signals and the other devices are disabled. The enabled PLL provides a plurality of reproduced clock signals with a phase shift of a multiple of 90° in response to an input clock signal. The data transfer is synchronized with at least one of the reproduced clock signals. In the devices of disabled PLLs, the data transfer is synchronized with the input clock signal. The enabled PLL and disabled PLL cause the devices to be the source and the common synchronous clocking, respectively. The devices can be grouped.

Abstract: A semiconductor device is disclosed, comprising a substrate having at least one substrate bonding pad. A plurality of semiconductor dies are stacked on the substrate. Each semiconductor die has at least one die bonding pad located on an active surface of the die. A plurality of interposers are each mounted on a corresponding one of the semiconductor dies. Each interposer has an aperture formed therethrough in alignment with the at least one die bonding pad. An electrical connection between the at least one die bonding pad and the at least one substrate bonding pad is formed at least in part by the interposer. The electrical connection includes at least one wire bond.

Abstract: An arrangement of memory devices and a controller is based on an interface with a reduced pin count relative to a known memory device and controller arrangement. Facilitating the reduced pin count interface are some operations performed by the controller. The controller determines a width for a Data bus while assigning a target device address to each of the memory devices.

Abstract: In an integrated circuit (IC) adapted for use in a stack of interconnected ICs, interrupted through-silicon-vias (TSVs) are provided in addition to uninterrupted TSVs. The interrupted TSVs provide signal paths other than common parallel paths between the ICs of the stack. This permits IC identification schemes and other functionalities to be implemented using TSVs, without requiring angular rotation of alternate ICs of the stack.

Abstract: A system includes a memory controller and a plurality of semiconductor devices that are series-connected. Each of the devices has memory core for storing data. The memory controller provides a clock signal for synchronizing the operations of the devices. Each device includes a phase-locked loop (PLL) that is selectively enabled or disabled by a PLL enable signal. In each group, the PLLs of a selected number of devices are enabled by PLL enable signals and the other devices are disabled. The enabled PLL provides a plurality of reproduced clock signals with a phase shift of a multiple of 90° in response to an input clock signal. The data transfer is synchronized with at least one of the reproduced clock signals. In the devices of disabled PLLs, the data transfer is synchronized with the input clock signal. The enabled PLL and disabled PLL cause the devices to be the source and the common synchronous clocking, respectively. The devices can be grouped.

Abstract: A configurable memory subsystem includes a memory module with a circuit board having a first and a second memory-containing device (MCD) pair mounted thereto. Each MCD pair has a first MCD in communication with a second MCD. Each MCD has an input port, an output port, and a memory each communicating with a bridge. In response to a command, the bridge transfers at least one of a portion of a data packet from the input port to the output port or to the memory, or transfers a portion of a memory packet from the memory to the output port. A loop-back device receives the command and the data packet form the first MCD pair and transmits the command and data packet to the second MCD pair.

Abstract: A method, system and apparatus for sharing internal power supplies in integrated circuit devices is described. A multiple device integrated circuit 200 including multiple integrated circuits 202-205 each having internal power supplies is contained in an enclosure 201. Integrated circuits 202-205 are described showing how to make external connection to internal power supplies. Connections 208-212 are provided to the internal power supplies of each of devices 202-205. Another embodiment 500 of the system provides for disablement of regulators in multiple integrated circuits 502, 503, and 504 by another integrated circuit 501 for power consumption reduction. The method FIG. 6 includes providing devices and connecting the internal power supplies together. An integrated circuit 501 with a power supply 400 adapted to the system and method with additional circuitry 308, 404 and 402 for disabling a regulator 306 is described.

Abstract: In an integrated circuit (IC) adapted for use in a stack of interconnected ICs, interrupted through-silicon-vias (TSVs) are provided in addition to uninterrupted TSVs. The interrupted TSVs provide signal paths other than common parallel paths between the ICs of the stack. This permits IC identification schemes and other functionalities to be implemented using TSVs, without requiring angular rotation of alternate ICs of the stack.

Abstract: A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory.

Abstract: A method of snap-shot data training to determine the optimum timing of the DQS enable signal in a single read operation is provided. This is accomplished by first writing a Gray code count sequence into the memory and then reading it back in a single burst. The controller samples the read burst at a fixed interval from the time the command was issued to determine the loop-around delay. A simple truth table lookup determines the optimum DQS enable timing for normal reads. Advantageously, during normal read operations, the first positive edge of the enabled DQS signal is used to sample a counter that is enabled every time a command is issued. If the counter sample changes, indicating timing drift has occurred, the DQS enable signal can be adjusted to compensate for the drift and maintain a position centered in the DQS preamble. This technique can also be applied to a system that uses the iterative approach to determining DQS enable timing on power up.