Patents by Inventor Peter L. G. Ventzek
Peter L. G. Ventzek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11551909Abstract: Described herein are architectures, platforms and methods for providing localized high density plasma sources igniting local gasses during a wafer fabrication process to provide global uniformity. Such plasma sources are resonant structures operating at radio frequencies at or higher than microwave values.Type: GrantFiled: October 2, 2017Date of Patent: January 10, 2023Assignee: Tokyo Electron LimitedInventors: Barton G. Lane, Peter L. G. Ventzek
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Publication number: 20210249226Abstract: A system and method for using plasma to treat a substrate are described. A plasma processing system includes a substrate holder arranged to support a substrate, a first signal generator for coupling a first signal at a first frequency to plasma in the plasma processing system, and a second signal generator for coupling a second signal at a second frequency that is less than the first frequency to the plasma in the plasma processing system. The system further includes a waveform generator configured to dynamically adjust a duty cycle of the second signal while the first signal is coupled to the plasma to spatially and temporally control the plasma density.Type: ApplicationFiled: April 26, 2021Publication date: August 12, 2021Inventors: Jianping Zhao, Peter L.G. Ventzek, Barton Lane
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Patent number: 11037798Abstract: Embodiments of the disclosure describe a cyclic etch method for carbon-based films. According to one embodiment, the method includes providing a substrate containing the carbon-based film, exposing the carbon-based film to an oxidizing plasma thereby forming an oxidized layer on the carbon-based film, thereafter, exposing the oxidized layer to a non-oxidizing inert gas plasma thereby removing the oxidized layer and forming a carbonized surface layer on the carbon-based film, and repeating the exposing steps at least once.Type: GrantFiled: November 8, 2017Date of Patent: June 15, 2021Assignee: Tokyo Electron LimitedInventors: Barton G. Lane, Nasim Eibagi, Alok Ranjan, Peter L. G. Ventzek
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Patent number: 10991554Abstract: A system and method for using plasma to treat a substrate are described. The system includes a substrate holder disposed within a plasma processing system, and arranged to support a substrate, a first signal generator for coupling a first signal at a first frequency to plasma in the plasma processing system, and a second signal generator for coupling a second signal at a second frequency to plasma in the plasma processing system, wherein the second frequency being less than the first frequency. The system further includes an amplitude modulation circuit for modulating the first signal between a high amplitude state and a low amplitude state in response to an amplitude modulation signal, and a timing circuit configured to define the amplitude modulation signal that synchronizes the amplitude modulation of the first signal with a target phase for each cycle of the second signal.Type: GrantFiled: September 21, 2018Date of Patent: April 27, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Jianping Zhao, Peter L. G. Ventzek, Barton Lane
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Patent number: 10483127Abstract: A plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a combination of microwave and radio frequency (RF) power sources that may generate plasma conditions to remove monolayer(s). The system may generation a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transition to a second plasma. The differences between the first and second plasma may be include the ion energy proximate to the substrate. For example, the first plasma may have an ion energy of less than 20 eV and the second plasma may have an ion energy greater than 20 eV.Type: GrantFiled: November 26, 2018Date of Patent: November 19, 2019Assignee: Tokyo Electron LimitedInventors: Mingmei Wang, Alok Ranjan, Peter L. G. Ventzek
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Publication number: 20190148113Abstract: A system and method for using plasma to treat a substrate are described. The system includes a substrate holder disposed within a plasma processing system, and arranged to support a substrate, a first signal generator for coupling a first signal at a first frequency to plasma in the plasma processing system, and a second signal generator for coupling a second signal at a second frequency to plasma in the plasma processing system, wherein the second frequency being less than the first frequency. The system further includes an amplitude modulation circuit for modulating the first signal between a high amplitude state and a low amplitude state in response to an amplitude modulation signal, and a timing circuit configured to define the amplitude modulation signal that synchronizes the amplitude modulation of the first signal with a target phase for each cycle of the second signal.Type: ApplicationFiled: September 21, 2018Publication date: May 16, 2019Inventors: Jianping Zhao, Peter L. G. Ventzek, Barton Lane
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Publication number: 20190103254Abstract: Described herein are architectures, platforms and methods for providing localized high density plasma sources igniting local gasses during a wafer fabrication process to provide global uniformity. Such plasma sources are resonant structures operating at radio frequencies at or higher than microwave values.Type: ApplicationFiled: October 2, 2017Publication date: April 4, 2019Inventors: Barton G. Lane, Peter L. G. Ventzek
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Patent number: 10249498Abstract: A method of controlling doping of a substrate, the method comprising: providing the substrate in a process chamber of a doping system; performing a doping process to impart a target dose on a surface of the substrate using a abruptness depth control technique; and controlling selected operating variables of plasma doping in order to meet doping objectives.Type: GrantFiled: April 14, 2016Date of Patent: April 2, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Peter L. G. Ventzek, Hirokazu Ueda
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Publication number: 20190096694Abstract: A plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a combination of microwave and radio frequency (RF) power sources that may generate plasma conditions to remove monolayer(s). The system may generation a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transition to a second plasma. The differences between the first and second plasma may be include the ion energy proximate to the substrate. For example, the first plasma may have an ion energy of less than 20 eV and the second plasma may have an ion energy greater than 20 eV.Type: ApplicationFiled: November 26, 2018Publication date: March 28, 2019Applicant: Tokyo Electron LimitedInventors: Mingmei Wang, Alok Ranjan, Peter L.G. Ventzek
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Patent number: 10211065Abstract: This disclosure relates to a plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a combination of microwave and radio frequency (RF) power sources that may generate plasma conditions to remove monolayer(s). The system may generation a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transition to a second plasma. The differences between the first and second plasma may be include the ion energy proximate to the substrate. For example, the first plasma may have an ion energy of less than 20 eV and the second plasma may have an ion energy greater than 20 eV.Type: GrantFiled: July 9, 2015Date of Patent: February 19, 2019Assignee: Tokyo Electron LimitedInventors: Mingmei Wang, Alok Ranjan, Peter L. G. Ventzek
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Publication number: 20180240686Abstract: A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.Type: ApplicationFiled: April 16, 2018Publication date: August 23, 2018Inventors: John Patrick Holland, Peter L.G. Ventzek, Harmeet Singh, Richard Gottscho
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Patent number: 10002744Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may include a power electrode that may be opposite a bias electrode and a focus ring electrode that surrounds the substrate. In one embodiment, the power electrode may be coupled to a direct current (DC) source. Power applied to the bias electrode may be used to draw ions to the substrate. The plasma density may be made more uniform by applying a focus ring voltage to the focus ring that is disposed around the substrate and/or the bias electrode.Type: GrantFiled: December 16, 2014Date of Patent: June 19, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Lee Chen, Peter L. G. Ventzek, Barton G. Lane
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Publication number: 20180130669Abstract: Embodiments of the disclosure describe a cyclic etch method for carbon-based films. According to one embodiment, the method includes providing a substrate containing the carbon-based film, exposing the carbon-based film to an oxidizing plasma thereby forming an oxidized layer on the carbon-based film, thereafter, exposing the oxidized layer to a non-oxidizing inert gas plasma thereby removing the oxidized layer and forming a carbonized surface layer on the carbon-based film, and repeating the exposing steps at least once.Type: ApplicationFiled: November 8, 2017Publication date: May 10, 2018Applicant: Tokyo Electron LimitedInventors: Barton G. Lane, Nasim Eibagi, Alok Ranjan, Peter L. G. Ventzek
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Patent number: 9947557Abstract: A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.Type: GrantFiled: October 28, 2014Date of Patent: April 17, 2018Assignee: Lam Research CorporationInventors: John Patrick Holland, Peter L. G. Ventzek, Harmeet Singh, Richard Gottscho
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Patent number: 9768033Abstract: This disclosure relates to a plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a combination of microwave and radio frequency (RF) power sources that may generate plasma conditions to remove monolayer(s). The system may generation a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transition to a second plasma. The differences between the first and second plasma may be include the ion energy proximate to the substrate. For example, the first plasma may have an ion energy of less than 20 eV and the second plasma may have an ion energy greater than 20 eV.Type: GrantFiled: July 2, 2015Date of Patent: September 19, 2017Assignee: Tokyo Electron LimitedInventors: Alok Ranjan, Mingmei Wang, Peter L. G. Ventzek
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Patent number: 9728416Abstract: A resonator system is provided with one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator system can be coupled to a process chamber using one or more interface and isolation assemblies, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM-energy from the resonant cavities to the process space within the process chamber.Type: GrantFiled: March 15, 2013Date of Patent: August 8, 2017Assignee: Tokyo Electron LimitedInventors: Jianping Zhao, Lee Chen, Merritt Funk, Iwao Toshihiko, Peter L. G. Ventzek
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Patent number: 9659754Abstract: The present disclosure provides a plasma processing apparatus, including: a processing chamber; an oscillator configured to output high-frequency power; a power supply unit configured to supply the high-frequency power from a specific plasma generating location into the processing chamber; a magnetic field forming unit provided outside the processing chamber and configured to forming a magnetic field at least at the specific plasma generating location; and a control unit configured to control the magnetic field formed by the magnetic field forming unit such that a relationship between an electron collision frequency fe of plasma generated in the processing chamber and a cyclotron frequency fc is fc>fe.Type: GrantFiled: November 5, 2013Date of Patent: May 23, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Jun Yoshikawa, Yoshio Susa, Naoki Matsumoto, Peter L. G. Ventzek
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Patent number: 9658106Abstract: There is provided a plasma processing apparatus, which includes: a processing chamber into which a target substrate is loaded and in which a dopant is implanted into the target substrate using a plasma of a gas which contains an element used as the dopant; a wall probe configured to measure a change in voltage corresponding to a density of charged particles in the plasma generated within the processing chamber; an OES (Optical Emission Spectrometer) configured to measure a light emission intensity of the dopant existing in the plasma; and a calculation unit configured to calculate a dose amount of the dopant implanted into the target substrate, based on a measurement result obtained at the wall probe and a measurement result obtained at the OES.Type: GrantFiled: April 30, 2015Date of Patent: May 23, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Yuuki Kobayashi, Hirokazu Ueda, Kohei Yamashita, Peter L. G. Ventzek
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Patent number: 9530621Abstract: This disclosure relates to a plasma processing system that can use a single power source assembly to generate inductively coupled plasma (ICP) and surface wave plasma using the same physical hardware. The power source assembly may include an antenna plate that may include a conductive material be used an ICP coil for a radio frequency (RF) power source and as a slot antenna for a microwave source.Type: GrantFiled: May 28, 2014Date of Patent: December 27, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Peter L. G. Ventzek, Lee Chen
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Publication number: 20160372327Abstract: A method of controlling doping of a substrate, the method comprising: providing the substrate in a process chamber of a doping system; performing a doping process to impart a target dose on a surface of the substrate using a abruptness depth control technique; and controlling selected operating variables of plasma doping in order to meet doping objectives.Type: ApplicationFiled: April 14, 2016Publication date: December 22, 2016Inventors: Peter L.G. Ventzek, Hirokazu Ueda