Abstract: A method for forming a semiconductor device includes depositing a metal resist layer over a layer to be patterned that is formed over a substrate; patterning the metal resist layer using a lithography process to form a patterned metal resist layer and expose portions of the layer to be patterned; selectively depositing a silicon containing layer over the patterned resist layer by exposing the substrate to a gas mixture comprising a silicon precursor, the silicon containing layer being preferentially deposited over a top surface of the metal resist layer; and performing a surface cleaning process by exposing the layer to be patterned and the patterned metal resist layer covered with the silicon containing layer to a plasma process with an etch chemistry comprising a halogen or hydrogen.

Abstract: A system includes a plasma chamber coupled to a power source, and an impedance matching network coupled between the power source and the plasma chamber, wherein the impedance matching network comprises an L-shaped network and a first adjustable inductor coupled between an input of the plasma chamber and ground, and wherein the impedance matching network is configured such that, in a predetermined frequency range, an impedance of the impedance matching network and the plasma chamber is substantially equal to an impedance of the power source.

Abstract: Improved process flows and methods are provided that use a cyclic dry process to transfer a pattern from a patterned organic layer to an underlying silicon-containing layer. The cyclic dry process disclosed herein includes a deposition step, an etch step and a purge step, which may be repeated a number of cycles to progressively etch the exposed portions of the silicon-containing layer. Unlike conventional pattern transfer processes, the cyclic dry process described herein anisotropically etches the silicon-containing layer with high selectivity to the patterned organic layer. In doing so, the disclosed process improves pattern transfer performance and avoids problems typically seen in conventional pattern transfer processes such as, e.g., CD enlargement, CD distortion and/or complete loss of photoresist.

Abstract: A method of operating a plasma processing system includes determining a first frequency to power a first plasma within a plasma processing chamber. The method includes generating a first amplified RF signal having the first frequency at a broadband power amplifier. The method includes supplying the first amplified RF signal to process a substrate disposed in the plasma processing chamber using a first plasma process including the first plasma. The method includes determining a second frequency to power a second plasma within the plasma processing chamber. The method includes generating a second amplified RF signal having the second frequency at the broadband power amplifier. The method includes supplying the second amplified RF signal to process the substrate disposed in the plasma processing chamber using a second plasma process including the second plasma.

Abstract: A plasma processing system includes a plasma chamber configured to contain a plasma, a shutter chamber fluidically coupled to the plasma chamber via a first orifice, a mass spectrometer fluidically coupled to the shutter chamber, and a shutter disposed in the shutter chamber between the first orifice and the mass spectrometer in the path of a particle beam. The first orifice is configured to generate the particle beam from the plasma using a pressure differential between the shutter chamber and the plasma chamber. The mass spectrometer includes an ionizer configured to ionize species of the particle beam by sweeping through a range of electron energies in a plurality of energy steps. The shutter is configured to open and close during each of the plurality of energy steps.

Abstract: A method of nitridation includes cyclically performing the following steps in situ within a processing chamber at a temperature less than about 400° C.: treating an unreactive surface of a substrate in the processing chamber to convert the unreactive surface to a reactive surface by exposing the unreactive surface to an energy flux, and nitridating the reactive surface using a nitrogen-based gas to convert the reactive surface to a nitride layer including a subsequent unreactive surface.

Abstract: A system includes a plasma chamber coupled to a power source, and an impedance matching network coupled between the power source and the plasma chamber, wherein the impedance matching network comprises an L-shaped network and a first adjustable inductor coupled between an input of the plasma chamber and ground, and wherein the impedance matching network is configured such that, in a predetermined frequency range, an impedance of the impedance matching network and the plasma chamber is substantially equal to an impedance of the power source.

Abstract: A plasma processing system includes a radical source chamber including a gas inlet, an electrode coupled to a radio frequency (RF) power source, where the electrode is configured to generate radicals within the radical source chamber, and an exit for radicals generated within the radical source chamber; a plenum attached to the exit of the radical source chamber, where the plenum is made of a first thermal conductor, and where the walls of the plenum include openings for gas flow; and a process chamber connected to the radical source chamber through the plenum. The process chamber includes a substrate holder disposed below the plenum; a gas outlet below the substrate holder; and process chamber walls including a second thermal conductor, where the process chamber walls of the process chamber are thermally coupled to the walls of the plenum.

Abstract: A method for processing a substrate includes forming a patterned layer over the substrate, the layer including an opening, where a surface of the opening includes a sidewall and a bottom wall. The method includes processing the patterned layer with an anisotropic process by generating a flux of gas clusters over the substrate in a first process chamber, where the gas clusters include radical precursors; exposing the substrate to the flux of gas clusters. The method includes sustaining plasma including ions in a second process chamber; and exposing the substrate to the ions by directing the ions toward the bottom wall of the opening.

Abstract: A measurement system for a plasma processing system includes a detector and an ion current meter coupled to the ion current collector and configured to provide a signal based on the measurements from the ion current collector. The detector includes an insulating substrate including a cavity, an ion angle selection grid configured to be exposed to a bulk plasma disposed in an upper portion of the cavity, and an ion current collector disposed within the cavity at an opposite side of the cavity below the ion angle selection grid. The ion angle selection grid includes an ion angle selection substrate and a plurality of through openings extending through the ion angle selection substrate, where each of the plurality of through openings has a depth into the ion angle selection substrate and a width orthogonal to the depth, where a ratio of the depth to the width is greater than or equal to 40.

Abstract: A method includes performing a first on phase including applying an SP pulse to an SP electrode to generate plasma, performing a second on phase after the first on phase, performing a corner etch phase after the second on phase, and performing a by-product management phase after the corner etch phase. The SP pulse terminates at the end of the first on phase. The second on phase includes applying a first BP pulse to a BP electrode coupled to a target substrate. The first BP pulse includes a first BP power level and accelerates ions of the plasma toward to target substrate. The corner etch phase includes applying a BP spike including a second BP power level greater than the first BP power level. The duration of the BP spike is less than the duration of the first BP pulse.

Abstract: Disclosed embodiments apply electron beams to substrates for microelectronic workpieces to improve plasma etch and deposition processes. The electron beams are generated and directed to substrate surfaces using DC (direct current) biasing, RF (radio frequency) plasma sources, and/or other electron beam generation and control techniques. For certain embodiments, DC-biased RF plasma sources, such as DC superposition (DCS) or hybrid DC-RF sources, are used to provide controllable electron beams on surfaces opposite a DC-biased electrode. For certain further embodiments, the DC-biased electrode is pulsed. Further, electron beams can also be generated through electron beam extraction from external and/or non-ambipolar sources. The disclosed techniques can also be used with additional electron beam sources and/or additional etch or deposition processes.

Abstract: A plasma processing apparatus includes a plasma processing chamber, a coil having an uncoiled length L disposed adjacent to the plasma processing chamber, and a plurality of retractable conductors each configured to make electrical contact with the coil in an extended position. A first tap position is located substantially at a distance L/2 measured from a first end along the coil, a second tap position neighboring the first tap position and located substantially at the distance L/2 measured from the first end along the coil, and a third tap position located substantially at the first end of the coil. A controller is configured to operate the plasma processing apparatus in a first operating mode to sustain an inductively coupled plasma and in a second operating mode to sustain a capacitively coupled plasma using subsets of the retractable conductors in the extended position.

Abstract: An exemplary plasma processing system includes a plasma processing chamber, an electrode for powering plasma in the plasma processing chamber, a tunable radio frequency (RF) signal generator configured to output a first signal at a first frequency and a second signal at a second frequency. The second frequency is at least 1.1 times the first frequency. The system includes a broadband power amplifier coupled to the tunable RF signal generator, the first frequency and the second frequency being within an operating frequency range of the broadband power amplifier. The output of the broadband power amplifier is coupled to the electrode. The broadband power amplifier is configured to supply, at the output, first power at the first frequency and second power at the second frequency.

Abstract: A plasma processing apparatus includes a processing chamber, a source power coupling element configured to generate plasma in the processing chamber, and a source power supply node coupled to the source power coupling element and configured to supply radio frequency power to the source power coupling element. The plasma processing apparatus further includes a substrate holder disposed in the processing chamber, a first bias power supply node coupled to the substrate holder and configured to supply first direct current biased power to the substrate holder, and a second bias power supply node coupled to the substrate holder and configured to supply second direct current biased power to the substrate holder. The first direct current biased power includes a first bias power frequency less than about 800 kHz and the second direct current biased power includes a second bias power frequency greater than 800 kHz.

Abstract: A method of etching is described. The method includes treating at least a portion of a surface exposed on a substrate with an adsorption-promoting agent to alter a functionality of the exposed surface and cause subsequent adsorption of a carbon-containing precursor, and thereafter, adsorbing the organic precursor to the functionalized surface to form a carbon-containing film. Then, at least a portion of the surface of the carbon-containing film is exposed to an ion flux to remove the adsorbed carbon-containing film and at least a portion of the material of the underlying substrate.

Abstract: Embodiments of hybrid electron beam and RF plasma systems and methods are described. In an embodiment a method of using a hybrid electron beam and RF plasma system may include forming a field of electrons a first region of a wafer processing structure. Such a method may also include forming a processing plasma in a second region of the wafer processing structure, the second region of the wafer processing structure being coupled to the first region of the wafer processing structure, the processing plasma being maintained by a combination of energy from a radiant energy source and from an electron beam formed from electrons in the field of electrons. Additionally, the method may include controlling a radical composition and ions of the processing plasma by setting a ratio of the energy supplied to the processing plasma from the electron beam and the energy supplied to the processing plasma from the radiant energy source.

Abstract: Described herein are technologies related to a radical source with a housing that includes a plasma cavity that is designed to contain a plasma created by a plasma generator. The housing has at least one gas injector designed to inject process gas into the plasma. The plasma produces radicals from the gas injected into the plasma. The cavity has an exit or opening formed therein that ejects the radicals from the cavity. The ejected radicals may be directed towards a subject wafer substrate under the radical source. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A process is provided in which a hard mask material comprising ruthenium is used. Ruthenium provides a hard mask material that is etch resistant to many of the plasma chemistries typically used for processing substrate patterning layers, including layers such as, for example, nitrides, oxides, anti-reflective coating (ARC) materials, etc. Further, ruthenium may be removed by plasma chemistries that do not remove nitrides, oxides, ARC materials, etc. For example, ruthenium may be easily removed through the use of an oxygen (O2) plasma. Further, ruthenium may be deposited as a thin planar 10 nm order film over oxides and nitrides and may be deposited as a planar layer.

Abstract: An exemplary plasma processing system includes a plasma processing chamber, an electrode for powering plasma in the plasma processing chamber, a tunable radio frequency (RF) signal generator configured to output a first signal at a first frequency and a second signal at a second frequency. The second frequency is at least 1.1 times the first frequency. The system includes a broadband power amplifier coupled to the tunable RF signal generator, the first frequency and the second frequency being within an operating frequency range of the broadband power amplifier. The output of the broadband power amplifier is coupled to the electrode. The broadband power amplifier is configured to supply, at the output, first power at the first frequency and second power at the second frequency.