Abstract: A plasma processing method includes providing a first source power (SP) pulse to an SP coupling element for a first SP pulse duration to generate plasma in a processing chamber, providing a high frequency bias power (HBP) pulse to a substrate holder disposed in the processing chamber for a HBP pulse duration overlapping the first SP pulse duration, and providing a first low frequency bias power (LBP) pulse to the substrate holder for a first LBP pulse duration not overlapping the first SP pulse duration. The HBP pulse includes an HBP pulse frequency that is greater than 800 kHz. The first LBP pulse includes an LBP pulse frequency that is less than about 800 kHz.

Abstract: An apparatus comprises an electron source chamber, an electron-beam sustained plasma (ESP) processing chamber, and a dielectric injector disposed between the electron source chamber and the ESP processing chamber. The dielectric injector comprises a first flared input region comprising a wide entry opening and a narrow exit opening. The wide entry opening opens into to the electron source chamber. The first flared input region is radially symmetric about a longitudinal axis of the dielectric injector. The dielectric injector further comprises a first parallel region comprising an input opening and an output opening. The input opening is adjacent to the narrow exit opening. The output opening is disposed opposite of the input opening. The first parallel region is cylindrical.

Abstract: A method for treating a substrate includes receiving the substrate in a vacuum process chamber. The substrate includes a III-V film layer disposed on the substrate. The III-V film layer includes an exposed surface, an interior portion underlying the exposed surface, and one or more of the following: Al, Ga, In, N, P, As, Sb, Si, or Ge. The method further includes altering the chemical composition of the exposed surface and a fraction of the interior portion of the III-V film layer to form an altered portion of the III-V film layer using a first plasma treatment, removing the altered portion of the III-V film layer using a second plasma treatment, and repeating the altering and removing of the III-V film layer until a predetermined amount of the III-V film layer is removed from the substrate.

Abstract: A method for forming a semiconductor device includes depositing a metal resist layer over a layer to be patterned that is formed over a substrate; patterning the metal resist layer using a lithography process to form a patterned metal resist layer and expose portions of the layer to be patterned; selectively depositing a silicon containing layer over the patterned resist layer by exposing the substrate to a gas mixture comprising a silicon precursor, the silicon containing layer being preferentially deposited over a top surface of the metal resist layer; and performing a surface cleaning process by exposing the layer to be patterned and the patterned metal resist layer covered with the silicon containing layer to a plasma process with an etch chemistry comprising a halogen or hydrogen.

Abstract: A plasma processing method includes providing a first source power (SP) pulse to an SP coupling element for a first SP pulse duration to generate plasma in a processing chamber, providing a high frequency bias power (HBP) pulse to a substrate holder disposed in the processing chamber for a HBP pulse duration overlapping the first SP pulse duration, and providing a first low frequency bias power (LBP) pulse to the substrate holder for a first LBP pulse duration not overlapping the first SP pulse duration. The HBP pulse includes an HBP pulse frequency that is greater than 800 kHz. The first LBP pulse includes an LBP pulse frequency that is less than about 800 kHz.

Abstract: Methods are provided herein for patterning extreme ultraviolet (EUV) (or lower wavelength) photoresists, such metal-oxide photoresists. A patterning layer comprising a metal-oxide photoresist is formed on one or more underlying layers provided on a substrate, and portions of the patterning layer not covered by a mask overlying the patterning layer are exposed to EUV or lower wavelengths light. A cyclic dry process is subsequently performed to remove portions of the patterning layer exposed to the EUV or lower wavelength light (i.e., the exposed portions) and develop the metal-oxide photoresist pattern. The cyclic dry process generally includes a plurality of deposition and etch steps, wherein the deposition step selectively deposits a protective layer onto unexposed portions of the patterning layer by exposing the substrate to a first plasma, and the etch step selectively etches the exposed portions of the patterning layer by exposing the substrate to a second plasma.

Abstract: A method of plasma processing includes continuously providing a gas into a processing chamber and AC source power to a source power coupling element for a first duration. The AC source power generates a plasma in the processing chamber. The method further includes, while providing the gas and the AC source power, applying a first negative bias voltage to an electron source electrode for a second duration and removing the first negative bias voltage from the electron source electrode for a third duration to discontinue the generation of the electron beam at the end of the second duration. The first negative bias voltage generates an electron beam directed towards a substrate holder. The method also includes applying a second negative bias voltage to the substrate holder while providing the gas and the AC power. The first duration is equal to the sum of the second duration and the third duration.

Abstract: A method for treating a substrate includes receiving a substrate in a vacuum process chamber. The substrate includes a III-V film layer disposed on the substrate. The III-V film layer includes an exposed surface, an interior portion underlying the exposed surface, and one or more of the following: Al, Ga, In, N, P, As, Sb, Si, or Ge. The method further includes altering the chemical composition of the exposed surface and a fraction of the interior portion of the III-V film layer to form an altered portion of the III-V film layer using a hydrogen-based plasma treatment, removing the altered portion of the III-V film layer using a chlorine-based plasma treatment, and repeating the altering and removing of the III-V film layer until a predetermined amount of the III-V film layer is removed from the substrate.

Abstract: A plasma processing apparatus includes a processing chamber, a substrate disposed in the processing chamber, and a plurality of electron sources configured to supply electrons to a plasma generated in the processing chamber. Each of the plurality of electron sources includes a first side facing the plasma in the processing chamber. Each of the plurality of electron sources also includes a resonant structure disposed at the first side and configured to be held at a negative direct current bias voltage.

Abstract: A plasma processing apparatus includes a plasma processing chamber, a coil having an uncoiled length L disposed adjacent to the plasma processing chamber, and a plurality of retractable conductors each configured to make electrical contact with the coil in an extended position. A first tap position is located substantially at a distance L/2 measured from a first end along the coil, a second tap position neighboring the first tap position and located substantially at the distance L/2 measured from the first end along the coil, and a third tap position located substantially at the first end of the coil. A controller is configured to operate the plasma processing apparatus in a first operating mode to sustain an inductively coupled plasma and in a second operating mode to sustain a capacitively coupled plasma using subsets of the retractable conductors in the extended position.

Abstract: A method of plasma processing includes generating a first sequence of source power pulses, generating a second sequence of bias power pulses, combining the bias power pulses of the second sequence with the source power pulses of the first sequence to form a combined sequence of alternating source power pulses and bias power pulses, and, using the combined sequence, generating a plasma comprising ions and processing a substrate by delivering the ions to a major surface of the substrate.

Abstract: A method of operating a plasma processing system includes determining a first frequency to power a first plasma within a plasma processing chamber. The method includes generating a first amplified RF signal having the first frequency at a broadband power amplifier. The method includes supplying the first amplified RF signal to process a substrate disposed in the plasma processing chamber using a first plasma process including the first plasma. The method includes determining a second frequency to power a second plasma within the plasma processing chamber. The method includes generating a second amplified RF signal having the second frequency at the broadband power amplifier. The method includes supplying the second amplified RF signal to process the substrate disposed in the plasma processing chamber using a second plasma process including the second plasma.

Abstract: An exemplary plasma processing system includes a plasma processing chamber, an electrode for powering plasma in the plasma processing chamber, a tunable radio frequency (RF) signal generator configured to output a first signal at a first frequency and a second signal at a second frequency. The second frequency is at least 1.1 times the first frequency. The system includes a broadband power amplifier coupled to the tunable RF signal generator, the first frequency and the second frequency being within an operating frequency range of the broadband power amplifier. The output of the broadband power amplifier is coupled to the electrode. The broadband power amplifier is configured to supply, at the output, first power at the first frequency and second power at the second frequency.

Abstract: A plasma processing apparatus includes a processing chamber, a substrate disposed in the processing chamber, and a plurality of electron sources configured to supply electrons to a plasma generated in the processing chamber. Each of the plurality of electron sources includes a first side facing the plasma in the processing chamber. Each of the plurality of electron sources also includes a resonant structure disposed at the first side and configured to be held at a negative direct current bias voltage.

Abstract: A method of plasma processing includes performing a reactive species control phase, performing an ion/radical control phase, and performing a by-product control phase. The reactive species control phase includes pulsing source power to a processing chamber to generate ions and radicals in a plasma. The ion/radical control phase is performed after the reactive species control phase. The ion/radical control phase includes reducing the source power to the processing chamber and pulsing bias power to a substrate in the processing chamber. The by-product control phase is performed after the ion/radical control phase. The by-product control phase includes reducing the source power to the processing chamber relative to the reactive species control phase and reducing the bias power to the substrate relative to the ion/radical control phase.

Abstract: In one embodiment, a plasma processing system includes a plasma processing chamber, a substrate holder disposed in the plasma processing chamber, a coil disposed over the plasma processing chamber, and a plurality of taps configured to contact the coil at an associated contact region. The plasma processing system is configured to sustain a plasma by selecting a subset of taps from the plurality of taps to apply a power source and a reference potential.

Abstract: In one embodiment, a plasma processing system includes a plasma processing chamber, a substrate holder disposed in the plasma processing chamber, a coil disposed over the plasma processing chamber, and a plurality of taps configured to contact the coil at an associated contact region. The plasma processing system is configured to sustain a plasma by selecting a subset of taps from the plurality of taps to apply a power source and a reference potential.

Abstract: In one embodiment, a plasma processing apparatus includes a plasma processing chamber that includes a first portion and a second portion. The first portion includes sidewalls and a top cover having a through hole. The second portion is coupled to the first portion via the through hole. A substrate holder is disposed in the first portion of the plasma processing chamber. A first coil is disposed over the first portion and a second coil is disposed over the first portion and around the second portion.

Abstract: In one exemplary embodiment described herein are innovative plasma processing methods and system that utilize direct measurement of direct current (DC) field or self-bias voltage (Vdc) in a plasma processing chamber. In one embodiment, a non-plasma contact measurement using the electric field effect from Vdc is provided. The Vdc sensing method may be robust to a variety of process conditions. In one embodiment, the sensor is integrated with any focus ring material (for example, quartz or doped-undoped silicon). Robust extraction of the Vdc measurement signal may be used for process control. In one embodiment, the sensor may be integrated, at least in part, with the substrate being processed in the chamber.

Abstract: A method for treating a substrate includes receiving a substrate in a vacuum process chamber. The substrate includes a III-V film layer disposed on the substrate. The III-V film layer includes an exposed surface, an interior portion underlying the exposed surface, and one or more of the following: Al, Ga, In, N, P, As, Sb, Si, or Ge. The method further includes altering the chemical composition of the exposed surface and a fraction of the interior portion of the III-V film layer to form an altered portion of the III-V film layer using a hydrogen-based plasma treatment, removing the altered portion of the III-V film layer using a chlorine-based plasma treatment, and repeating the altering and removing of the III-V film layer until a predetermined amount of the III-V film layer is removed from the substrate.