Abstract: A chip package includes a chip, a dam element, and a height-increasing element. The chip has an image sensing area, a first surface, and a second surface opposite to the first surface. The image sensing area is located on the first surface of the chip. The dam element is located on the first surface of the chip and surrounds the image sensing area. The height-increasing element is located on the dam element, such that the dam element is between the height-increasing element and the chip.

Abstract: A chip package is provided. The chip package includes a substrate having a first surface and a second surface opposite thereto. A dielectric layer is disposed on the first surface of the substrate and includes a conducting pad structure. A first opening penetrates the substrate and exposes a surface of the conducting pad structure. A second opening is communication with the first opening and penetrates the conducting pad structure. A redistribution layer is conformally disposed on a sidewall of the first opening and the surface of the conducting pad structure and is filled into the second opening. A method for forming the chip package is also provided.

Abstract: A chip package is provided. The chip package includes a first substrate including a sensing region or device region. The chip package also includes a second substrate. The first substrate is mounted on the second substrate and is electrically connected to the second substrate. The ratio of the thickness of the first substrate to the thickness of the second substrate is in a range from 2 to 8.

Abstract: A chip package includes a chip having an upper surface and a lower surface. A sensing element is disposed on the upper surface of the chip, and a thermal dissipation layer is disposed below the lower surface of the chip. A plurality of thermal dissipation external connections are disposed below the thermal dissipation layer and in contact with the thermal dissipation layer.

Abstract: This present invention provides a chip scale sensing chip package, comprising a sensing chip having a first top surface and a first bottom surface opposite to the first top surface, which comprises a sensing device near the first top surface, a plurality of conductive pads near the first top surface and adjacent to the sensing device; a plurality of through holes on the first top surface and each of the through holes exposing one of the conductive pads corresponding to with each other; a plurality of conductive structure formed on the first bottom surface; and a re-distribution layer (RDL) formed on the first bottom surface and the first through holes to respectively connect to each of the conductive pads and each of the conductive structures; a spacing layer, surrounding the sensing chip, formed on the sensing chip.

Abstract: A method of manufacturing chip package includes providing a semiconductor wafer having a plurality of semiconductor chips. An outer spacer and a plurality of inner spacers are formed on the semiconductor wafer. A protection lid is formed and disposed on the outer spacer and the inner spacers. A plurality of cavities is formed on each of the semiconductor chips from a lower surface thereof to expose the conductive pad disposed on the upper surface of the semiconductor chip. A plurality of conductive portions is formed and fills each of the cavities and electrically connected to each of the conductive pads. A plurality of solder balls is disposed on the lower surface and electrically connected to each of the conductive portions. The semiconductor chips are separated by cutting along a plurality of cutting lines between each of the semiconductor chips.

Abstract: A chip package is provided. The chip package includes a substrate having a first surface and a second surface opposite thereto. A dielectric layer is disposed on the first surface of the substrate and includes a conducting pad structure. A first opening penetrates the substrate and exposes a surface of the conducting pad structure. A second opening is communication with the first opening and penetrates the conducting pad structure. A redistribution layer is conformally disposed on a sidewall of the first opening and the surface of the conducting pad structure and is filled into the second opening. A method for forming the chip package is also provided.

Abstract: A method of manufacturing chip package includes providing a semiconductor wafer having a plurality of semiconductor chips. An outer spacer and a plurality of inner spacers are formed on the semiconductor wafer. A protection lid is formed and disposed on the outer spacer and the inner spacers. A plurality of cavities is formed on each of the semiconductor chips from a lower surface thereof to expose the conductive pad disposed on the upper surface of the semiconductor chip. A plurality of conductive portions is formed and fills each of the cavities and electrically connected to each of the conductive pads. A plurality of solder balls is disposed on the lower surface and electrically connected to each of the conductive portions. The semiconductor chips are separated by cutting along a plurality of cutting lines between each of the semiconductor chips.

Abstract: A chip package and a fabrication method thereof are provided. The chip package includes a semiconductor substrate, having a first surface and an opposing second surface. A spacer is disposed under the second surface of the semiconductor substrate and a cover plate is disposed under the spacer. A recessed portion is formed adjacent to a sidewall of the semiconductor substrate, extending from the first surface of the semiconductor substrate to at least the spacer. Then, a protection layer is disposed over the first surface of the semiconductor substrate and in the recessed portion.

Abstract: A chip package includes semiconductor chips, inner spacers, cavities, conductive portions and solder balls. The semiconductor chip has at least an electronic component and at least an electrically conductive pad disposed on an upper surface thereof. The conductive pad is arranged abreast to one side of the electronic component and electrically connected thereto. The cavities open to a lower surface of the semiconductor chip and extend toward the upper surface to expose the conductive pad on the upper surface. The conductive portions fill the cavities from the lower surface and electrically connected the to conductive pad. The solder balls are disposed on the lower surface and electrically connected to the conductive portions. A gap is created between an outer wall of the inner spacers and an edge of the semiconductor chip.

Abstract: A semiconductor structure includes a chip, a light transmissive plate, a spacer, and a light-shielding layer. The chip has an image sensor, a first surface and a second surface opposite to the first surface. The image sensor is located on the first surface. The light transmissive plate is disposed on the first surface and covers the image sensor. The spacer is between the light transmissive plate and the first surface, and surrounds the image sensor. The light-shielding layer is located on the first surface between the spacer and the image sensor.

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A wafer structure having a silicon substrate and a protection layer is provided. An electrical pad on the protection layer is exposed through the concave region of the silicon substrate. An isolation layer is formed on the sidewall of the silicon substrate surrounding the concave region and a surface of the silicon substrate facing away from the protection layer. A redistribution layer is formed on the isolation layer and the electrical pad. A passivation layer is formed on the redistribution layer. The passivation layer is patterned to form a first opening therein. A first conductive layer is formed on the redistribution layer exposed through the first opening. A conductive structure is arranged in the first opening, such that the conductive structure is in electrical contact with the first conductive layer.

Abstract: A chip device package and a fabrication method thereof are provided. The chip device package includes a semiconductor substrate having a first surface and an opposing second surface. A recessed portion is disposed adjacent to a sidewall of the semiconductor substrate, extending from the first surface of the semiconductor substrate to at least the second surface of the semiconductor substrate. A protection layer is disposed over the first surface of the semiconductor substrate and in the recessed portion. A through hole is disposed on the first surface of the semiconductor substrate. A buffer material that is different from the material of the protection layer is disposed in the through hole and covered by the protection layer.

Abstract: A chip package includes semiconductor chips, inner spacers, cavities, conductive portions and solder balls. The semiconductor chip has at least an electronic component and at least an electrically conductive pad disposed on an upper surface thereof. The conductive pad is arranged abreast to one side of the electronic component and electrically connected thereto. The cavities open to a lower surface of the semiconductor chip and extend toward the upper surface to expose the conductive pad on the upper surface. The conductive portions fill the cavities from the lower surface and electrically connected the to conductive pad. The solder balls are disposed on the lower surface and electrically connected to the conductive portions. A gap is created between an outer wall of the inner spacers and an edge of the semiconductor chip.

Abstract: A chip package includes a semiconductor chip, insulation layer, redistribution layer and packaging layer and is formed with a cavity. The semiconductor chip has an electronic component and a conductive pad. The conductive pad and the electronic component are disposed on an upper surface of the semiconductor chip and electrically connected. The cavity opens from a lower surface of the semiconductor chip and tapers toward the upper surface to expose the conductive pad. The insulation layer coats the lower surface and a portion of the cavity. The insulation layer is formed with a gap to expose the conductive pad. The redistribution layer coats the lower surface and a portion of the cavity and is electrically connected to the conductive pad through the gap. The packaging layer coats the lower surface and a portion of the cavity.

Abstract: A manufacturing method of a semiconductor device includes the following steps. A temporary bonding layer is used to adhere a carrier to a first surface of a wafer. A redistribution layer, an insulating layer, and a conductive structure are formed on a second surface of the wafer opposite to the first surface, such that a semiconductor element is formed. The semiconductor element is diced from the insulating layer to the carrier, such that the semiconductor element forms at least one sub-semiconductor element. UV light is used to irradiate the sub-semiconductor element, such that adhesion of the temporary bonding layer is eliminated. The carrier of the sub-semiconductor element is removed.

Abstract: A semiconductor structure includes a silicon substrate, a protection layer, an electrical pad, an isolation layer, a redistribution layer, a conductive layer, a passivation layer, and a conductive structure. The silicon substrate has a concave region, a step structure, a tooth structure, a first surface, and a second surface opposite to the first surface. The step structure and the tooth structure surround the concave region. The step structure has a first oblique surface, a third surface, and a second oblique surface facing the concave region and connected in sequence. The protection layer is located on the first surface of the silicon substrate. The electrical pad is located in the protection layer and exposed through the concave region. The isolation layer is located on the first and second oblique surfaces, the second and third surfaces of the step structure, and the tooth structure.

Abstract: A chip package and a fabrication method thereof are provided. The chip package includes a semiconductor substrate, having a first surface and an opposing second surface. A spacer is disposed under the second surface of the semiconductor substrate and a cover plate is disposed under the spacer. A recessed portion is formed adjacent to a sidewall of the semiconductor substrate, extending from the first surface of the semiconductor substrate to at least the spacer. Then, a protection layer is disposed over the first surface of the semiconductor substrate and in the recessed portion.

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A wafer structure having a silicon substrate and a protection layer is provided. An electrical pad on the protection layer is exposed through the concave region of the silicon substrate. An isolation layer is formed on the sidewall of the silicon substrate surrounding the concave region and a surface of the silicon substrate facing away from the protection layer. A redistribution layer is formed on the isolation layer and the electrical pad. A passivation layer is formed on the redistribution layer. The passivation layer is patterned to form a first opening therein. A first conductive layer is formed on the redistribution layer exposed through the first opening. A conductive structure is arranged in the first opening, such that the conductive structure is in electrical contact with the first conductive layer.

Abstract: A chip device package and a fabrication method thereof are provided. The chip device package includes a semiconductor substrate having a first surface and an opposing second surface. A recessed portion is disposed adjacent to a sidewall of the semiconductor substrate, extending from the first surface of the semiconductor substrate to at least the second surface of the semiconductor substrate. A protection layer is disposed over the first surface of the semiconductor substrate and in the recessed portion. A through hole is disposed on the first surface of the semiconductor substrate. A buffer material that is different from the material of the protection layer is disposed in the through hole and covered by the protection layer.