Abstract: A method includes storing a first transaction entry to a first software configurable storage location, storing a second transaction entry to a second software configurable storage location, determining that a first transaction indicated by the first transaction entry has occurred, determining that a second transaction indicated by the second transaction entry has occurred subsequent to the first transaction, and, in response to determining that the first transaction occurred and the second transaction occurred, storing at least one transaction attribute captured during at least one clock cycle subsequent to the second transaction. The first and second software configurable storage locations may be located in a trace buffer, where the at least one transaction attribute is stored to the trace buffer and overwrites the first and second transaction attributes. Each transaction entry may include a dead cycle field, a consecutive transaction requirement field, and a last entry field.

Abstract: A pipeline circuit determines a first effective address based a sum of a first value and a second value. The first effective address is based upon an actual value of a carry-in into a bit-wise region of the first and second values. The bit-wise region includes a predefined internal region of bits of the first and second values. The pipeline circuit also determines a second effective address based a sum of a third value and a fourth value. A collision detector circuit receives bits from the bit-wise region of each of the four values and determines a plurality of speculative results based upon the bits of the bit-wise regions and based upon a plurality of speculative carry-in values. A collision indicator is asserted based on at least one result of the plurality of speculative results, and the actual values of the first and second carry-in.

Abstract: A charge pump system includes a charge pump, a switchable impedance, a comparator, and a capacitor. The switchable impedance has an input coupled to the output of the charge pump. The comparator has a first input coupled to the output of the switchable impedance, a second input coupled to a reference, and an output coupled to the input of the charge pump. The capacitor has a first terminal coupled to the output of the charge pump and a second terminal coupled to the first input of the comparator. The switchable impedance causes a first impedance between the first and second terminals of the capacitor during a start-up operation of the charge pump system and a second impedance between the first and second terminals of the capacitor during a steady-state operation of the charge pump system, wherein the first impedance is lower than the second impedance.

Abstract: A data processing device can perform error detection and correction in two stages: in the first stage, error detection is performed for the load data using the in-line error detection information. If a first type of error is detected in the data segment, the error is corrected using the in-line error detection information. If a second type of error is detected error correction is performed using the residual sum.

Abstract: A master stage (502) of a master-slave flip-flop (500) includes an input terminal (504) for receiving the data-in signal, an output terminal, and terminals for receiving first clock signals, a transmission gate (522) coupled to the input terminal and having an output terminal, a storage element (520) coupled to the output terminal of the transmission gate, and a two-input logic gate (525) having a first input terminal (541) coupled to the storage element, a parallel input terminal (542) coupled to the input terminal of the master stage, and an output terminal (543) that provides an output terminal of the master stage. A slave stage (503) has terminals for receiving second clock signals, wherein first clock signals are delayed relative to second clock signals.

Abstract: A method of operating a circuit includes receiving a first data signal at a first node. The first node is coupled to a second node to couple the first data signal to the second node. After coupling the first node to the second node, an inversion is enabled from the second node to a third node. An inversion from the third node to the fourth node is provided. After the enabling the inversion from the second node to the third node, the first node is decoupled from the second node. After the enabling the inversion from the second node to the third node, the second node is coupled to the third node. An inversion from the fourth node to the third node is enabled and the second node is decoupled from the fourth node.

Abstract: A memory includes a memory array having a plurality of word lines, a plurality of latching predecoders, and word line driver logic. Each latching predecoder receives a clock signal and a plurality of address signals and latches a result of a logic function of the plurality of address signals in response to a first edge of a clock cycle of the clock signal and provides a predetermined value in response to a second edge of the first clock cycle of the clock signal, wherein, in response to the second edge, every latching decoder of the plurality of latching predecoders provides a same predetermined value. The word line driver logic selectively activates a selected word line of the plurality of word lines in response to the latched results.

Abstract: A memory device includes a plurality of sense amplifiers, an array of memory cells including a first subset of memory cells, and a plurality of word lines. Each word line is coupled to each memory cell in a respective row of the memory cells and each row of the memory cells includes one memory cell of the first subset of memory cells. Each of a plurality of control word lines is coupled to a respective one of the memory cells in the first subset of memory cells and each of the memory cells in the first subset of memory cells generates a sense amplifier control signal coupled to control operation of a respective one of the plurality of sense amplifiers.

Abstract: A method includes determining, for a first thread of execution, a first speculative decoded operands signal and determining, for a second thread of execution, a second speculative decoded operands signal. The method further includes determining, for the first thread of execution, a first constant and determining, for the second thread of execution, a second constant. The method further compares the first speculative decoded operands signal to the second speculative decoded operands signal and uses the first and second constant to detect a wordline collision for accessing the memory array.

Abstract: A method includes: receiving a first plurality of consecutive bits from a base operand, wherein a MSB of the first plurality of consecutive bits from the base operand is a LSB of a second plurality of consecutive bits from the base operand; and receiving a first plurality of consecutive bits from an offset operand, wherein a MSB of the first plurality of consecutive bits from the offset operand is a LSB of a second plurality of consecutive bits from the offset operand. The method includes summing the first plurality of consecutive bits from the base operand with the first plurality of consecutive bits from the offset operand to generate a sum value; and allowing access to one of a plurality of memory arrays and disabling access to the remainder of the plurality of memory arrays when a lesser significant bit to a MSB of the sum value equals zero.

Abstract: A semiconductor memory storage device comprises an array of storage devices including a plurality of rows of the storage devices and a plurality of columns of the storage devices, a first plurality of write ports, a write select signal coupled to the write ports, a plurality of write port address lines coupled as input to each of the write ports, and a first plurality of word line select circuits coupled to receive an address signal and the write select signal for each of the write ports and to provide a single selected write word line signal to a respective one of the rows of the storage devices for one of the first plurality of write ports activated by the write select signal.

Abstract: Embodiments of systems and methods for detecting errors that occur in association with an access to a memory and providing an associated error status are presented herein. According to one embodiment, an access to a memory may be received, where the access comprises a request tag. A request parity is determined based on the request tag and a stored tag and a stored parity associated with the request tag are also determined. An error correction status is determined based on the stored tag and the stored parity associated with the request tag. Additionally, a parity hotness is determined by comparing the request parity and the stored parity and a tag hotness is determined by comparing the request tag and the stored tag. An error status associated with the access is determined based on the parity hotness, the tag hotness and the error correction status.

Abstract: A method of operating a circuit includes receiving a first data signal at a first node. The first node is coupled to a second node to couple the first data signal to the second node. After coupling the first node to the second node, an inversion is enabled from the second node to a third node. An inversion from the third node to the fourth node is provided. After the enabling the inversion from the second node to the third node, the first node is decoupled from the second node. After the enabling the inversion from the second node to the third node, the second node is coupled to the third node. An inversion from the fourth node to the third node is enabled and the second node is decoupled from the fourth node.

Abstract: A memory system includes a memory and a content addressable memory (CAM). The memory includes a plurality of address locations, wherein each address location configured to store data and one or more error correction bits corresponding to the data. The CAM includes a plurality of entries, wherein each entry configured to store an address value of an address location of the memory and one or more extended error correction bits corresponding to the data stored at the address location of the memory.

Abstract: A method for minimizing soft error rates within caches by configuring a cache with certain sections to correspond to bitcell topologies that are more resistant to soft errors and then using these sections to store modified data.

Abstract: A method for minimizing soft error rates within caches by configuring a cache with a certain way which is more resistant to soft errors and then using this way to store modified data. In certain embodiments, the memory is made more soft error resistant by increasing a voltage across bitcells of the cache.

Abstract: A multi-port memory cell of a multi-port memory array includes a first inverter that inverter is disabled by a first subset of write word lines and a second inverter, cross coupled with the first inverter, wherein the second inverter is disabled by a second subset of the plurality of write word lines. A first selection circuit has data inputs coupled to a first subset of a plurality of write bit lines, selection inputs coupled to the first subset of the plurality of write word lines, and an output coupled to the input of the second inverter. The second selection circuit has data inputs coupled to a second subset of the plurality of write bit lines, selection inputs coupled to the second subset of the plurality of write word lines, and an output coupled to the input of the first inverter.

Abstract: A memory includes a plurality of latching predecoders, each including a first transistor coupled between a power supply voltage and a latch and having a control electrode coupled to a clock signal; a second transistor coupled to the first transistor and having a control electrode coupled to a first address bit signal; a third transistor coupled to the second transistor and having a control electrode coupled to a second address bit signal; a fourth transistor coupled to the third transistor and having a control electrode coupled to a delayed and inverted version of the clock signal; a fifth transistor coupled between the fourth transistor and ground and having a control electrode coupled to the clock signal; and an output which provides a predecode value during a first portion of a clock cycle of the clock signal and a predetermined logic level during a second portion of the clock cycle.

Abstract: An electronic circuit includes a plurality of circuit blocks, a plurality of bias circuits, a switching circuit, and plurality of transistors. The plurality of circuit blocks each includes a high power terminal and a low power terminal. The switching circuit includes a plurality of switches for selectively coupling a bias circuit of the plurality of bias circuits to the low power terminal of a circuit block of the plurality of circuit blocks. Each bias circuit of the plurality of bias circuits is selectively couplable to the low power terminal of each of the plurality of circuit blocks. Each transistor of the plurality of transistors has a first current terminal coupled to a circuit ground terminal, and each transistor of the plurality of transistors has a control terminal for controlling the conductivity of the plurality of the transistors by a bias circuit of the plurality of bias circuits.

Abstract: A mechanism is provided for detecting and correcting a first number of bit errors in a segment of data stored in a memory region being read, while concurrently detecting the presence of higher numbers of bit errors in that segment of data. In the event of detection of a higher number of bit errors in any single segment of data of the memory region, error correction of that higher number of bit errors is performed on the memory region, while concurrently detecting the presence of an even higher level of bit errors. By performing error correction of higher levels of bit errors in such a hierarchical order, memory latency associated with such error correction can be avoided in the majority of data accesses, thereby improving performance of the data access.