Abstract: There is provided a readily manufacturable semiconductor device including two transistors having mutually different characteristics. The semiconductor device includes a substrate, a multilayer wiring layer disposed over the substrate, a first transistor disposed in the multilayer wiring layer, and a second transistor disposed in a layer different from a layer including the first transistor disposed therein of the multilayer wiring layer, and having different characteristics from those of the first transistor. This can provide a readily manufacturable semiconductor device including two transistors having mutually different characteristics.

Abstract: A method of manufacturing a semiconductor device with NMOS and PMOS transistors is provided. The semiconductor device can lessen a short channel effect, can reduce gate-drain current leakage, and can reduce parasitic capacitance due to gate overlaps, thereby inhibiting a reduction in the operating speed of circuits. An N-type impurity such as arsenic is ion implanted to a relatively low concentration in the surface of a silicon substrate (1) in a low-voltage NMOS region (LNR) thereby to form extension layers (61). Then, a silicon oxide film (OX2) is formed to cover the whole surface of the silicon substrate (1). The silicon oxide film (OX2) on the side surfaces of gate electrodes (51-54) is used as an offset sidewall. Then, boron is ion implanted to a relatively low concentration in the surface of the silicon substrate (1) in a low-voltage PMOS region (LPR) thereby to form P-type impurity layers (621) later to be extension layers (62).

Abstract: The semiconductor integrated circuit device has: more than one analog port; an A/D conversion part operable to execute an A/D conversion process for converting an analog signal taken in through each analog port into a digital signal for each preset virtual channel; and an A/D conversion control part operable to control an action of the A/D conversion part. The A/D conversion control part includes: virtual channel registers on which correspondence between the virtual channel and the analog port can be set; and a scan-group-forming register on which a start position of a scan group and an end position thereof can be set. The A/D conversion control part controls the A/D conversion part to successively execute an A/D conversion process on a plurality of virtual channels from a virtual channel associated with the start pointer to a virtual channel associated with the end pointer.

Abstract: A semiconductor device includes a power-supply circuit which produces a first voltage potential, a first terminal, a second terminal which receives a mode signal, an inverter which receives the mode signal and outputs an inverted mode signal, and a first transfer circuit which includes a first transistor of a first conductivity type and a second transistor of a second conductivity type, the first transistor coupled between the power-supply circuit and a first node, the second transistor coupled between the power-supply circuit and the first node in parallel with the first transistor, a control gate of the first transistor supplied with the inverted mode signal and a control gate of the second transistor supplied with the mode signal.

Abstract: A multi-thread processor includes a plurality of hardware threads each of which generates an independent instruction flow, a thread scheduler that manages in what order a plurality of hardware threads are processed with a pre-established schedule, and an interrupt controller that receives an input interrupt request signal and assigns the interrupt request to an associated hardware thread, wherein the interrupt controller comprises a register in which information is stored for each channel of an interrupt request signal, and the information includes information regarding to which one or more than one of the plurality of hardware threads the interrupt request signal is associated.

Abstract: A level shift circuit includes a first pair of transistors of the first conductive type (M1, M4) with sources coupled to a pair of input nodes (in, inB) and gates coupled to the first power supply (GND) in common; a second pair of transistors of the second conductive type (M2, M5) with drains coupled to the drains of the first pair of the transistors and the gates coupled to the first power supply in common; a third pair of transistors of the second conductive type (M3, M6) with cross-coupled gates and drains coupled to the sources of the second pair of transistors and the sources coupled to the second power supply (V2) in common; and a pair of capacitative elements (C1, C2) with one ends coupled to the pair of input nodes and the other ends coupled to the drains of the third pair of transistors.

Abstract: A watchdog timer circuit for use in microcomputer monitor systems is disclosed. This circuit includes a timer circuit responsive to receipt of a count clock signal for counting it up, and a timer control circuit which loads an externally inputted data signal (stn) in sync with a timer refresh instruction (prun) and holds therein a sequentially loaded latest multi-bit data signal as reference data. When the reference data agrees with a predefined pattern and simultaneously another prespecified condition is met, the timer control circuit interrupts the clock signal counting operation of the timer circuit. During interruption of the counting operation, when the reference data does not agree with the predefined pattern or when the above-stated another prespecified condition becomes unsatisfied, the control circuit allows the timer circuit to restart the clock signal counting operation.

Abstract: A semiconductor device avoids the disturb problem and the collision between write and read operations in a DP-SRAM cell or a 2P-SRAM cell. The semiconductor device 1 includes a write word line WLA and a read word line WLB each coupled to memory cells 3. A read operation activates the read word line WLB corresponding to the selected memory cell 3. A write operation activates the write word line WLA corresponding to the selected memory cell 3. The selected write word line WLA is activated after activation of the selected read word line WLB in an operation cycle that performs both read and write operations.

Abstract: An apparatus includes: an offset adjustment unit supplying an offset correction signal corresponding to a frequency switching to an adder unit receiving output from a mixer; a timing adjustment unit adjusting the timing of a frequency switching signal supplied to a local oscillator and the timing of an offset correction amount switching signal supplied to the offset adjustment unit for changing an offset amount in correspondence with the frequency switching in the local oscillator; a noise amount measurement and calculation unit receiving a signal obtained by amplifying and filtering the signal from the adder unit, to measure a noise amount of the signal and generates a timing determination signal based on the noise amount; and a control unit controlling frequency switching signal timing and the offset correction amount switching signal supplied to the timing adjustment unit, based on the timing determination signal from the noise amount measurement and calculation unit.

Abstract: A semiconductor integrated circuit includes a logic circuit having a plurality of operation modes, a power source circuit that generates a power source voltage to be supplied to the logic circuit, a power source wiring that couples the power source circuit and the logic circuit, and a charge control block that holds charges for controlling the voltage of the power source wiring. The power source circuit generates a first power source voltage for causing the logic circuit to operate in a computing mode and a second power source voltage for causing the logic circuit to operate in a sleep mode. The charge control block includes a capacitor, a first switch, and a voltage supply unit that supplies the second power source voltage or a third power source voltage lower than the second power source voltage, to the capacitor.

Abstract: Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.

Abstract: The present invention properly starts up various types of motors under operating conditions where motor operations are performed in a wide range of temperature and power supply voltage. Output drive controllers supply PWM drive output signals to the output pre-driver in such a manner as to minimize the error between a current instruction signal and a current detection digital signal. In response to a detected induced voltage generated from a voltage detector upon startup of a motor, an initial acceleration controller supplies initial acceleration output signals specifying a conducting phase for initial acceleration of the motor to the output drive controllers. The initial acceleration controller, the output drive controllers, and an output driver make a conducting phase change and perform a PWM drive to provide the initial acceleration of the motor in response to the detected induced voltage and to an error upon startup of the motor.

Abstract: A semiconductor device prevents recognition failure in mutual recognition between a host and a device compliant with USB Specifications. The semiconductor device includes: an interterminal opening/closing section having a plurality of first conductivity type MOS transistors, the respective sources or drains of which are cascaded, in which the source or drain of a first-stage MOS transistor among the cascaded MOS transistors is used as a first terminal, the source or drain of a final-stage MOS transistor among the cascaded MOS transistors is used as a second terminal, and the respective gates of the cascaded MOS transistors receive a control signal for controlling the opening or short-circuiting between the first and second terminals; and a current bypass section that reduces a current flowing into either one connection node coupling the respective sources or drains of the cascaded MOS transistors.

Abstract: A semiconductor device according to the present invention includes a first address generation unit that includes a first register group and generates a table address by a cyclically repeating first pattern using a value stored to the first register group, a second address generation unit that includes a second register group and generates an access address by a cyclically repeating second pattern using a value stored to the second register group and parameter information determined by the table address, and a control unit that outputs setting information to be supplied to the first register group and the second register group. Further, the semiconductor device performs at least one of a read process and a write process of data from and to a data memory using the access address.

Abstract: Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the SOI substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed. Then, an impurity is implanted into an upper surface of the semiconductor substrate with using the gate electrode and the epitaxial layer as a mask, so that a halo region is formed in only a region of the upper surface of the semiconductor substrate which is right below a vicinity of both ends of the gate electrode.

Abstract: A method of cleaning a semiconductor device that both inhibits dissolution of gate metal material and acquires favorable contact resistance. The gate of the device is multilayered, with stacked layers of metal and silicide beneath an insulation layer and atop a silicon substrate. A shared contact hole formed in the insulation layer exposes the silicide layer and multilayer gate from the insulation layer. The shared contact hole is subjected to sulfuric acid, aqueous hydrogen peroxide and APM cleaning processes, separately, to remove an altered layer that tends to form in the shared contact hole.

Abstract: A gate trench 13 is formed in a semiconductor substrate 10. The gate trench 13 is provided with a gate electrode 16 formed over a gate insulating film 14. A portion of the gate electrode 16 protrudes from the semiconductor substrate 10, and a sidewall 24 is formed over a side wall portion of the protruding portion. A body trench 25 is formed in alignment with an adjacent gate electrode 16. A cobalt silicide film 28 is formed over a surface of the gate electrode 16 and over a surface of the body trench 25. A plug 34 is formed using an SAC technique.

Abstract: A reference voltage generating circuit with extremely low temperature dependence is provided. The reference voltage generating circuit includes a BGR circuit which generates a bandgap reference voltage; a bandgap current generating circuit which generates a bandgap current according to the bandgap reference voltage; a PTAT current generating circuit which generates a current proportional to the absolute temperature; and a linear approximate correction current generating circuit which compares the current generated by the PTAT current generating circuit and the bandgap current to generate a correction current, and the BGR circuit adds, to the bandgap reference voltage, a correction voltage generated based on the correction current.

Abstract: A memory control device includes a first memory, a second memory, a third memory longer in a delay time since start-up until an actual data access, and a control unit. The second memory stores at least a part of data from each data string among multiple data strings with a given number of data as a unit. The third memory stores all of data within the plurality of data strings therein. If a cache miss occurs in the first memory, the control unit conducts hit determination of a cache in the second memory, and starts an access to the third memory. If the result of the hit determination is a cache hit, the control unit reads the part of data falling under the cache hit from the second memory as leading data, reads data other than the part of data, of a data string to which the part of data belongs, from the third memory, and makes a response as subsequent data to the leading data.

Abstract: In the manufacturing steps of a super-junction power MOSFET having a drift region having a super junction structure, after the super junction structure is formed, introduction of a body region and the like and heat treatment related thereto are typically performed. However, in the process thereof, a dopant in each of P-type column regions and the like included in the super junction structure is diffused to result in a scattered dopant profile. This causes problems such as degradation of a breakdown voltage when a reverse bias voltage is applied between a drain and a source and an increase in ON resistance. According to the present invention, in a method of manufacturing a silicon-based vertical planar power MOSFET, a body region forming a channel region is formed by selective epitaxial growth.