Abstract: An electron source including selectively impurity doped semiconductor diamond wherein regions of selectively impurity doped regions are inverted with respect to the charge carrier population to provide a conductive path traversed by electrons subsequently emitted into a free-space region from the electron emitter. An inversion mode electron emission device including a selectively impurity doped semiconductor diamond electron emitter, for emitting electrons; a control electrode; and an anode for collecting emitted electrons wherein operation of the device relies on the inducement of an inversion region to facilitate electron transit to an electron emitting surface of the electron emitter.

Abstract: A field emission display includes an insulating layer and an emitting layer disposed on the faceplate. A vacuum chamber is disposed between a backplane and the emitting layer and contains a getter. Apertures are defined through the insulating layer and the emitting layer for communicating contaminates from the faceplate to the vacuum chamber.

Abstract: An electron emission device including an array of microelectronic field emission devices, each with an integrally formed capacitance, a plurality of switches, a weighting level detector, and data storage and weighting structure. In one operational method, the field emission device electron current emission is characterized and a weighting factor is calculated and coupled into the data storage and weighting means so as to provide electron emission device electron emission current in accordance with a desired emission level as prescribed by a data input signal and notwithstanding variations in electron current emission which may be present due to device fabrication.

Abstract: A ballistic charge transport device including an edge electron emitter defining an elongated central opening therethrough with a receiving terminal (e.g. an anode) at one end of the opening and a getter at the other end. A suitable potential is applied between the emitter and the receiving terminal to attract emitted electrons to the receiving terminal and a different suitable potential is applied between the emitter and the getter so that contaminants, such as ions and other undesirable particles, are accelerated toward and absorbed by the getter.

Abstract: A method of forming an electron emitter for an FED by means of successive evaporative material depositions, providing a flexibility of electron emitter formation which removes geometry constraints that limited the form of prior art field emission device electron emitters. The resultant field emission device yields improved performance as a result of increased insulator layer thickness and electron emitter aspect ratio.

Abstract: A flat screen display constructed through use of cold cathode field emission devices, wherein the devices serve to support the structural integrity of the resultant assembly, and wherein edge emission is utilized to energize luminescent material in support of the display function.

Abstract: A cold cathode field emission device employs photon energy and electric field induced electron emission enhancement to provide subthreshold photoelectric emission; and, alternatively, photon-enhanced cold cathode field emission.

Abstract: An electronic device including a plurality of field emission devices exhibiting dis-similar electron emission characteristics wherein an aperture radius associated with each of the plurality of field emission devices determines the electron emission characteristic.

Abstract: A method for forming a field emission device. A substrate is selectively patterned. An etch is performed to remove portions of the substrate to form protrusions. An oxidation is performed to the substrate that forms a first oxidized layer. A perpendicular etch is performed that removes portions of the first oxidized layer. A second oxidation is performed to the substrate that forms a second oxidized layer. A conductive or semiconductive layer is deposited onto the second oxidized layer. An etch is performed to remove a portion of the first oxidized layer and a portion of the second oxidized layer to expose the protuberance.

Abstract: A field emission device including an electron emitter and a peripherally disposed gate extraction electrode defining a free space region therebetween. The device has an insulating layer substantially isolating the gate extraction electrode from the free space region. The device prevents damaging arc discharge between the electron emitter and gate extraction electrode because of the improved insulation and provides an additional mechanism for electric field enhancement.

Abstract: An energy storage circuit employing an energy storage network and a field emission device charge transport switch is provided. Utilization of various configurations of FEDs in the energy storage circuit provides for performance enhancement of addressing of display devices including liquid crystal displays, electroluminescent displays, and cathodoluminescent displays employing FED electron sources.

Abstract: An electron source including selectively impurity doped semiconductor diamond wherein regions of selectively impurity doped regions are inverted with respect to the charge carrier population to provide a conductive path traversed by electrons subsequently emitted into a free-space region from the electron emitter. An inversion mode electron emission device including a selectively impurity doped semiconductor diamond electron emitter, for emitting electrons; a control electrode; and an anode for collecting emitted electrons wherein operation of the device relies on the inducement of an inversion region to facilitate electron transit to an electron emitting surface of the electron emitter.

Abstract: A FED including an integrally formed electrostatic lens with an aperture having a diameter which is dis-similar from an aperture of the FED gate to effect a reduction in electron beam cross-section. By forming the FED with an electrostatic lens aperture of increased diameter relative to the diameter of the gate aperture a reduced sensitivity with respect to lens thickness and location is realized as is a relaxation of electrostatic lens fabrication constraints. Image display devices employing such integrally formed electrostatic lens systems may be provided wherein pixel cross-sections as small as two microns are realized.

Abstract: Apparatus including a diamond semiconductor material bipolar transistor having associated therewith a distally disposed iso-collector. The iso-collector, when operated with a suitable voltage, provides a communicating electric field to the bipolar transistor collector which, in concert with a voltage coupled to the transistor base places the apparatus in an ON mode to induce electrons to be emitted from the collector and to be subsequently collected at the iso-collector. An iso-base is optionally, distally disposed relative to the base of the bipolar transistor.

Abstract: An integrally formed field emission device and electron emission control circuit wherein electron emission is controlled by a current source semiconductor circuit and a semiconductor switch coupled such that upon application of switching information to the switch the field emission device is enabled to an ON mode for the time duration of the information and during which time the current source provides a determined electron current to be subsequently emitted by the emitter of the field emission device. A field emission device array and electron emission control circuits is provided to effectively control electron emission for each field emission device in the array.

Abstract: A method of producing an FED including a central conductive region having a surface perpendicular to the supporting structure forming a device anode, a structure including first and second layers of intrinsic semiconductor material with a conductive layer, forming an emitter, sandwiched therebetween and stacked to each provide a surface parallel to and spaced from the conductive region surface, and conductive layers disposed on the provided surfaces of the first and second layers, perpendicular to the sandwiched conductive layer, in spaced relation to each other and the sandwiched conductive layer to form gate extraction electrodes.

Abstract: An improved method of manufacturing high performance field emission devices is set forth which provides for high frequency and high switching speed operation. A field emission device employing an electron emitter is disposed on a projection provides for significant reduction in interelectrode capacitance. A method for forming the improved field emission device includes selective etching of one of the substrate and conductive/semiconductive materials to provide a projection or plurality of projections on which the electron emitter(s) is (are) disposed. The projections may be on the order of 100 .mu.m in extent.

Abstract: An optical signal detector insensitive to variations in optical signal intensity and operably discriminable with respect to signal wavelength is provided. An incident optical signal comprised of wavelength dependent information is detected to provide electronic current information substantially insensitive to variations in incoming optical signal intensity.

Abstract: A variety of field emission devices and structures which employ non-substrate layers of single-crystal silicon. By employing non-substrate layers of single-crystal silicon, improved emission control is achieved and improved performance controlling devices are formed within the device structure.

Abstract: Field emission device apparatus employing an integrally formed capacitance and a switch serially connected between a conductive element and a current source to provide substantially continuous emitted electron current during selected charging periods and non-charging periods.