Abstract: A digital-to-analog (D/A) signal conversion device employing scaled field emission devices to convert a digital information multi-bit input signal including data information in one of many forms such as, for example, binary or decimal, to an analog output current or voltage signal.

Abstract: A field emission display constructed from field emission devices, (which are typically fabricated on silicon substrates but which are difficult to seal to pressure levels below 1.times.10.sup.-6 Torr because they are fabricated on silicon), can be enclosed in an evacuated volume, sealed using a glass frit, when an appropriate interface layer is first formed on the substrate for the field emission devices.

Abstract: A cold-cathode field emission device controls electron emission by using a current source coupled to the emitter. The open circuit voltage of the current source is less than the voltage at which the FED would emit electrons. Application of an accelerating potential on the gate enables electron emission. Electron emission from the FED is governed by the current source.

Abstract: A method for forming an electron emitter layer wherein the electron emitter layer comprises a plurality of elemental conductive materials that etch at dis-similar rates to provide a structure with an edge exhibiting a geometric discontinuity of small radius of curvature.

Abstract: A broad-band microwave waveguide radio frequency splitter and combiner (70 and 100) can be realized by using TEM mode wave propagation to edge guide mode wave propagation conversion performed by magnetically biased material (16) and directionally opposed magnetic fields (20 and 22) and a waveguide such as a microstrip (10) or a stripline (50) to spatially separate a TEM mode signal into two or more components.

Abstract: A device providing electric-field induced electron emission includes an annular edge for emission of charged particles. Particle emission is induced, at least in part, by the presence of a conducting or semi-conducting post within the periphery of the emitting edge.

Abstract: A field emission electron device employing an electron emitter comprised of a coating of diamond material disposed on a surface of a selectively formed conductive/semiconductive electrode and a method of forming the device including a step wherein carbon ions are implanted at a surface of a conductive/semiconductive electrode to function as nucleation sites for the diamond formation.

Abstract: A PIN diode switch employing an active switching field emission device having high intrinsic isolation to high frequency and microwave frequency energy signals and exhibiting integratability is provided.

Abstract: A cold cathode field emission device that includes a ballast resistor (202, 303, 402) integrally formed therewith and coupled to the emitter (204, 302, 403) to allow appropriate compensation for manufacturing and performance variations in field emission from the attached emitter.

Abstract: An integrally controlled field emission device display employing planar field emission devices as controlling elements for non-planar field emission devices utilized for excitation of a cathodoluminescent layer is provided.

Abstract: A field emission device having a diamond semiconductor electron emitter with an exposed surface exhibiting a low/negative electron affinity which is operably controlled by modulation of a junction depletion region. Application of a suitable operating voltage to a device gate electrode modulates the depletion width to control availability of electrons transiting the bulk of the electron emitter for emission at the exposed surface.

Abstract: A display device exhibiting improved thermal performance at the faceplate by utilizing a layer of thermally highly conductive substantially optically transmissive solid material is provided. According to the invention, an optically transmissive display faceplate is disclosed having a substantially planar optically transmissive base sheet or a substantially optically transmissive region of substantially uniform thickness of a cathode ray tube envelope. On the base sheet is disposed at least one layer of substantially optically transmissive solid material, such as a deposited diamond film, with thermal conductivity greater than that of the faceplate material disposed on at least a part of a major surface of the substantially optically transmissive base sheet or substantially optically transmissive region of substantially uniform thickness of a cathode ray tube envelope.

Abstract: A field emission electron emitter employing a coating of diamond material disposed on a surface of a layer of conductive/semiconductive material is constructed by a method including the steps of implanting carbon ions at a surface of a selectively shaped substrate to function as nucleation sites for the diamond formation. A conductive layer is deposited over the diamond and the substrate is removed to leave an electron emitter with a diamond coating.

Abstract: An FED, modified with an electrostatically deformable anode, has a control network attached to electrodes thereof to switch the FED off as the anode is deformed by electrostatic force and switch the FED on as the anode returns to a quiescent state. Frequency selectivity is realized by incorporating a variable frequency determining network within the control network.

Abstract: A solid state field emission device having a cathode that is peripherally disposed about the anode and axially displaced with respect thereto. The device itself is encapsulated, readily manufacturable, and has comparable operating properties, vis-a-vis one another when manufactured in quantity.

Abstract: An electronic device employing controlled cold-cathode field-induced electron emission device(s) is set forth wherein controlling sources, drivers, select logic, and interconnecting lines and paths are integrated directly within a single structure.

Abstract: A MOSCAP that includes a semiconductor layer (103) having gold impurities sufficient to increase the density of deep recombination traps in the semiconductor bandgap. During operation of the MOSCAP in high frequency, reverse bias operating conditions, these deep recombination traps will facilitate formation of an inversion layer that will maintain relatively stable capacitive characteristics for the resultant MOSCAP.

Abstract: A cold cathode field emission device (100) having an encapsulating layer (109) formed through a low angle vapor deposition process. The encapsulation layer (109) includes an electrode (111). Depending upon the embodiment, the electrode can function as an anode (312) or as a gate (111).

Abstract: Field emission devices are cascaded in multiple stages, such that certain structures function as electrodes for field emission devices of differing stages.

Abstract: A method for temperature compensation of a bipolar transistor through optically-induced carrier density enhancement. In response to the output of a temperature sensor, the optical output power of a photon source directed toward the bipolar transistor to be compensated is varied. Photons incident on the semiconductor surface effect variations in supplemental carrier concentration that maintain junction potential of the bipolar transistor at a predetermined level.