Abstract: Disclosed are methods, systems and devices for operation of dual non-volatile memory devices. In one aspect, a pair of non-volatile memory device coupled in series may be placed in complementary memory states any one of multiple memory states in write cycles by controlling a current and a voltage applied to terminals of the non-volatile memory device.

Abstract: Disclosed are methods, systems and devices for operation of dual non-volatile memory devices. In one aspect, a pair of non-volatile memory device coupled in series may be placed in complementary memory states any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device.

Abstract: Disclosed are methods, systems and devices for operation of dual non-volatile memory devices. In one aspect, a pair of non-volatile memory device coupled in series may be placed in complementary memory states any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device.

Abstract: Subject matter disclosed herein may relate to generation of programmable voltage references.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a non-volatile memory device may be placed in any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. For example, a write operation may apply a programming signal across terminals of non-volatile memory device having a particular current and a particular voltage for placing the non-volatile memory device in a particular memory state.

Abstract: Subject matter disclosed herein may relate to programmable current for correlated electron switches.

Abstract: Encryption of data within a memory is provided by key generation circuitry which serves to generate a key as a function of the address within the memory being accessed and then encryption circuitry or decryption circuitry which serve respectively to encrypt or decrypt the data as a function of the key that has been generated based upon the address. The encryption and the decryption may be performed using a bitwise XOR operation. The key generation circuitry may have the form of physically unclonable function circuitry, which varies from instance to instance of implementation and that operates to generate the same key for the same address upon both write and read operations within the same instance.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a non-volatile memory device may be placed in any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. For example, a write operation may apply a programming signal across terminals of non-volatile memory device having a particular current and a particular voltage for placing the non-volatile memory device in a particular memory state.

Abstract: Disclosed are methods, systems and devices for operation of dual non-volatile memory devices. In one aspect, a pair of non-volatile memory device coupled in series may be placed in complementary memory states any one of multiple memory states in write cycles by controlling a current and a voltage applied to terminals of the non-volatile memory device.

Abstract: An apparatus has a plurality of storage units. A parity generator is configured to generate a parity value in dependence on the respective values stored in the plurality of storage units. The parity generator is configured such that determination of the parity value is independent of a read access to the data stored the plurality of storage units. A detector is configured to detect a change in value of the parity value.

Abstract: Encryption of data within a memory 6 is provided by key generation circuitry 12 which serves to generate a key as a function of the address within the memory 6 being accessed and then encryption circuitry 14 or decryption circuitry 16 which serve respectively to encrypt or decrypt the data as a function of the key that has been generated based upon the address. The encryption and the decryption may be performed using a bitwise XOR operation. The key generation circuitry may have the form of physically unclonable function circuitry, which varies from instance to instance of implementation and that operates to generate the same key for the same address upon both write and read operations within the same instance.

Abstract: A data processing apparatus has at least one memory and processing circuitry. A memory built-in self-test (MBIST) interface receives a MBIST request indicating that a test procedure is to be performed for testing at least one target memory location. Control circuitry detects the MBIST request and reserves for testing at least one reserved memory location including the target memory location. During the test procedure, the memory continues servicing memory transactions issued by the processing circuitry that target a memory location other than the reserved location reserved by the control circuitry. The processing circuitry is stalled if it attempts to access a reserved memory location. Testing consists of short bursts of transactions which occur infrequently. In this way, MBIST testing may continue while the processor is operation in the field with reduced performance impact.

Abstract: Encryption of data within a memory 6 is provided by key generation circuitry 12 which serves to generate a key as a function of the address within the memory 6 being accessed and then encryption circuitry 14 or decryption circuitry 16 which serve respectively to encrypt or decrypt the data as a function of the key that has been generated based upon the address. The encryption and the decryption may be performed using a bitwise XOR operation. The key generation circuitry may have the form of physically unclonable function circuitry, which varies from instance to instance of implementation and that operates to generate the same key for the same address upon both write and read operations within the same instance.

Abstract: A data processing apparatus has at least one memory and processing circuitry. A memory built-in self-test (MBIST) interface receives a MBIST request indicating that a test procedure is to be performed for testing at least one target memory location. Control circuitry detects the MBIST request and reserves for testing at least one reserved memory location including the target memory location. During the test procedure, the memory continues servicing memory transactions issued by the processing circuitry that target a memory location other than the reserved location reserved by the control circuitry. The processing circuitry is stalled if it attempts to access a reserved memory location. Testing consists of short bursts of transactions which occur infrequently. In this way, MBIST testing may continue while the processor is operation in the field with reduced performance impact.

Abstract: An apparatus has a plurality of storage units. A parity generator is configured to generate a parity value in dependence on the respective values stored in the plurality of storage units. The parity generator is configured such that determination of the parity value is independent of a read access to the data stored the plurality of storage units. A detector is configured to detect a change in value of the parity value.

Abstract: A data storage apparatus is provided which has a plurality of data storage units, each respective data storage unit configured to store a respective data bit of a data word. Stored data value parity generation circuitry is configured to generate a parity bit for the data word in dependence on the data bits of the data word stored in the plurality of data storage units. The stored data value parity generation circuitry is configured such that switching within the stored data value parity generation circuitry does not occur when the data word is read out from the plurality of data storage units. Transition detection circuitry is configured to detect a change in value of the parity bit.

Abstract: A latching device includes input and output latching elements to receive and output data values wherein the input and output elements are configured to receive a first and second clocks, respectively. The clocks have the same frequency but are inverted. The elements are transparent and transmit data between an input and an output in response to the first value of a received clock and are opaque and hold the data value in response to a second value of the received clock, such that in response to the first and second clocks the input data value is clocked through the input and output elements to the output. The device includes a device for selecting an operational data value or a diagnostic data value for input to the input element in response to a value of a diagnostic enable signal indicating a functional mode or a diagnostic mode.

Abstract: A latching device includes input and output latching elements to receive and output data values wherein the input and output elements are configured to receive a first and second clocks, respectively. The clocks have the same frequency but are inverted. The elements are transparent and transmit data between an input and an output in response to the first value of a received clock and are opaque and hold the data value in response to a second value of the received clock, such that in response to the first and second clocks the input data value is clocked through the input and output elements to the output. The device includes a device for selecting an operational data value or a diagnostic data value for input to the input element in response to a value of a diagnostic enable signal indicating a functional mode or a diagnostic mode.

Abstract: An apparatus and method are provided for detecting an approaching error condition within a data processing apparatus and includes a sequential storage structure arranged to latch an output signal generated by combinatorial circuitry dependent on a second clock signal. The sequential storage structure has a main storage element to latch a value of the output signal for provision to subsequent combinatorial circuitry. The sequential storage structure can be operated in either first or second modes of operation where, in the first mode, the predetermined timing window is ahead of a time at which the main storage element latches said value of the output signal enabling an approaching setup timing error to be detected. In the second mode, the predetermined timing window is after the time at which the main storage element latches said value of the output signal where an approaching hold timing error is detected.

Abstract: A method is provided for altering distribution of a chosen characteristic of a plurality of memory cells forming a memory device. The method comprises identifying a subset of the memory cells whose value of the chosen characteristic is within a predetermined end region of the distribution, and then performing a burn-in process during which one or more operating parameters of the memory device are set to induce aging of the memory cells. During the burn-in process, for each memory cell in the subset, the value stored in that memory cell is fixed to a selected value which exposes that memory cell to a stress condition. In contrast, for each memory cell not in the subset, the value stored in that memory cell is alternated during the burn-in process in order to alleviate exposure of that memory cell to the stress condition. Such an approach allows a tightening of the distribution of the chosen characteristic, thus improving the worst case memory cells.