Abstract: An ionically resistive ionically permeable element for use in an electroplating apparatus includes ribs to tailor hydrodynamic environment proximate a substrate during electroplating. In one implementation, the ionically resistive ionically permeable element includes a channeled portion that is at least coextensive with a plating face of the substrate, and a plurality of ribs extending from the substrate-facing surface of the channeled portion towards the substrate. Ribs include a first plurality of ribs of full maximum height and a second plurality of ribs of smaller maximum height than the full maximum height. In one implementation the ribs of smaller maximum height are disposed such that the maximum height of the ribs gradually increases in a direction from one edge of the element to the center of the element.

Abstract: A contact for providing a connection to a substrate in a substrate plating system includes a body having an arcuate shape. The arcuate shape of the body is configured to conform to a shape of at least a portion of a substrate arranged on a lip seal and a cup of the substrate plating system. A plurality of first contact fingers extend a first distance from the body. A plurality of second contact fingers extend a second distance from the body. The first distance is greater than the second distance.

Abstract: An apparatus for electroplating a semiconductor wafer includes an insert member configured to circumscribe a processing region. The insert member has a top surface. A portion of the top surface of the insert member has an upward slope that slopes upward from a peripheral area of the top surface of the insert member toward the processing region. The apparatus also includes a seal member having an annular-disk shape. The seal member is positioned on the top surface of the insert member. The seal member is flexible such that an outer radial portion of the seal member conforms to the upward slope of the top surface of the insert member and such that an inner radial portion of the seal member projects inward toward the processing region.

Abstract: An electroplating apparatus for electroplating metal on a substrate includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, and an azimuthally asymmetric auxiliary electrode configured to be biased both anodically and cathodically during electroplating. The azimuthally asymmetric auxiliary electrode (which may be, for example, C-shaped), can be used for controlling azimuthal uniformity of metal electrodeposition by donating and diverting ionic current at a selected azimuthal position.

Abstract: A cell to process a substrate includes at least one chamber wall, a membrane frame, and a membrane. The at least one chamber wall is arranged to form a cavity below a holder of the substrate. The membrane frame is disposed on the at least one chamber wall and across the cavity. The membrane is supported by the membrane frame and separating a first electrolyte from a second electrolyte. The membrane includes a surface extending from a center of the cavity radially outward at an angle relative to a reference plane, and wherein the angle is greater than or equal to 0° and less than or equal to 3°.

Abstract: In one example, the disclosed apparatus is a substrate contact-ring to support a substrate. The substrate contact-ring includes a peripheral structure sized and configured to support the substrate within the substrate contact-ring. The peripheral structure includes a substantially flat ring-section, and a spaced array of contact fingers mechanically coupled to the substantially flat ring-section. Each of the spaced array of contact fingers is resiliently movable to engage an edge of the substrate supported within the substrate contact-ring. A proximal end of each of the contact fingers is mechanically coupled to the flat ring section of the substrate contact-ring and a distal end of each of the contact fingers is resiliently movable radially inwardly and outwardly of the substrate contact-ring to alternately engage and release the edge of the substrate when the substrate is alternately being supported or removed from the substrate contact-ring. Other apparatuses and methods are disclosed.

Abstract: An electroplating apparatus for electroplating metal on a substrate includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, and an azimuthally asymmetric auxiliary electrode configured to be biased both anodically and cathodically during electroplating. The azimuthally asymmetric auxiliary electrode (which may be, for example, C-shaped), can be used for controlling azimuthal uniformity of metal electrodeposition by donating and diverting ionic current at a selected azimuthal position.

Abstract: Various embodiments described herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. In some cases, one or more membrane may be provided in contact with an ionically resistive element to minimize the degree to which electrolyte passes backwards from a cross flow manifold, through the ionically resistive element, and into an ionically resistive element manifold during electroplating. The membrane may be designed to route electrolyte in a desired manner in some embodiments. In these or other cases, one or more baffles may be provided in the ionically resistive element manifold to reduce the degree to which electrolyte is able to bypass the cross flow manifold by flowing back through the ionically resistive element and across the electroplating cell within the ionically resistive element manifold. These techniques can be used to improve the uniformity of electroplating results.

Abstract: Disclosed are electroplating cups for holding, sealing, and providing electrical power to wafers during electroplating, where the electroplating cup can include a cup bottom, an elastomeric lipseal, and an electrical contact element. The cup bottom can include a radially inwardly protruding surface with a plurality of through-holes. The elastomeric lipseal can directly adhere to the radially inwardly protruding surface of the cup bottom, fill the plurality of through-holes, and encircle an inner edge of the cup bottom. In some implementations, this can mitigate the effects of wafer sticking. In some implementations, the cup bottom may be treated to promote adhesion between the elastomeric lipseal and the radially inwardly protruding surface of the cup bottom.

Abstract: An active (consumable) anode includes, in one aspect, a generally annular body and a protrusion used for connecting the anode to the power supply, where the protrusion extends outward from the generally annular body of the anode. The compositions of the generally annular body and of the protrusion are the same, and, in some embodiments, the anode is a one-piece anode that does not include any welding seams. Such structure results in reduced voltage fluctuations during plating and in improved control over plating uniformity. In some embodiments, the anode is a copper anode, a cobalt anode, or a nickel anode machined from a single sheet of anode-grade metal. The provided anode can be used in an electroplating apparatus as a secondary, peripherally disposed anode, in conjunction with a more centrally located primary anode. The provided anode is configured to modulate electroplating at the edge of the substrate.

Abstract: A valve assembly used with a process chamber for depositing a film on a wafer. A valve body surrounds a bore and includes an inlet, a first outlet and a second outlet, at least one of them exiting into the process chamber. A piston includes a first section having a first flow path, and a second section having a second flow path. A linear motion actuator is adapted to couple with the piston and controls linear movement of the piston through the bore between a first position and a second position. In the first position, the first section of the piston is aligned with the inlet such that fluid flows to the first outlet via the first flow path. In the second position, the second section of the piston is aligned with the inlet such that fluid flows to the second outlet via the second flow path.

Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved plating uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; and an ionically resistive ionically permeable element comprising a substantially planar substrate-facing surface and an opposing surface, wherein the element allows for flow of ionic current towards the substrate during electroplating, and wherein the element comprises a region having varied local resistivity. In one example the resistivity of the element is varied by varying the thickness of the element. In some embodiments the thickness of the element is gradually reduced in a radial direction from the edge of the element to the center of the element. The provided apparatus and methods are particularly useful for electroplating metal in WLP recessed features.

Abstract: Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. The shield is positioned in close proximity of the substrate (e.g., within a distance that is equal to 0.1 of the substrate's radius). The shield in some embodiments may be an ionically resistive ionically permeable element having an azimuthally asymmetric distribution of channels.

Abstract: Various embodiments herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. The apparatus includes an ionically resistive element that separates the plating chamber into a cross flow manifold (above the ionically resistive element) and an ionically resistive element manifold (below the ionically resistive element). Electrolyte is delivered to the cross flow manifold, where it shears over the surface of the substrate, and to the ionically resistive element manifold, where it passes through through-holes in the ionically resistive element to impinge upon the substrate as it enters the cross flow manifold. In certain embodiments, the flow of electrolyte into the cross flow manifold (e.g., through a side inlet) and the flow of electrolyte into the ionically resistive element manifold are actively controlled, e.g., using a three-way valve. In these or other cases, the ionically resistive element may include electrolyte jets.

Abstract: Electroplating results can be improved by dynamically controlling the pressure in different parts of an electroplating apparatus. For example, a number of plating problems can be avoided by ensuring that the pressure in an anode chamber always remains slightly above the pressure in an ionically resistive element manifold, both during electroplating and during non-electroplating operations. This pressure differential prevents the membrane from stretching downward into the anode chamber.

Abstract: An apparatus for electroplating a semiconductor wafer includes an insert member configured to circumscribe a processing region. The insert member has a top surface. A portion of the top surface of the insert member has an upward slope that slopes upward from a peripheral area of the top surface of the insert member toward the processing region. The apparatus also includes a seal member having an annular-disk shape. The seal member is positioned on the top surface of the insert member. The seal member is flexible such that an outer radial portion of the seal member conforms to the upward slope of the top surface of the insert member and such that an inner radial portion of the seal member projects inward toward the processing region.

Abstract: An active (consumable) anode includes, in one aspect, a generally annular body and a protrusion used for connecting the anode to the power supply, where the protrusion extends outward from the generally annular body of the anode. The compositions of the generally annular body and of the protrusion are the same, and, in some embodiments, the anode is a one-piece anode that does not include any welding seams. Such structure results in reduced voltage fluctuations during plating and in improved control over plating uniformity. In some embodiments, the anode is a copper anode, a cobalt anode, or a nickel anode machined from a single sheet of anode-grade metal. The provided anode can be used in an electroplating apparatus as a secondary, peripherally disposed anode, in conjunction with a more centrally located primary anode. The provided anode is configured to modulate electroplating at the edge of the substrate.

Abstract: Methods and apparatus for electroplating material onto a substrate are provided. In many cases the material is metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a porous ionically resistive plate positioned near the substrate, the plate having a plurality of interconnecting 3D channels and creating a cross flow manifold defined on the bottom by the plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through channels in the plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.

Abstract: An apparatus for electroplating a semiconductor wafer includes an insert member configured to circumscribe a processing region. The insert member has a top surface. A portion of the top surface of the insert member has an upward slope that slopes upward from a peripheral area of the top surface of the insert member toward the processing region. The apparatus also includes a seal member having an annular-disk shape. The seal member is positioned on the top surface of the insert member. The seal member is flexible such that an outer radial portion of the seal member conforms to the upward slope of the top surface of the insert member and such that an inner radial portion of the seal member projects inward toward the processing region.

Abstract: Electroplating results can be improved by dynamically controlling the pressure in different parts of an electroplating apparatus. For example, a number of plating problems can be avoided by ensuring that the pressure in an anode chamber always remains slightly above the pressure in an ionically resistive element manifold, both during electroplating and during non-electroplating operations. This pressure differential prevents the membrane from stretching downward into the anode chamber.