Abstract: Embodiments described herein relate generally to monitoring a dining session using smart smallwares. A smart smallware may sense usage or non-usage associated with a dining session of a customer. Based on the sensed non-usage of the smart smallware, the smart smallware may detect a period of inactivity. In response to the detected period of inactivity, the smart smallware may transmit an indication of the detected period of inactivity. This transmitted indication may cause an external monitoring device to notify a waitperson that a customer associated with that smart smallware may require attention. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure provide techniques and configurations for an orthotic device. In one instance, the device may include an orthotic device body and at least two sensors spatially disposed inside the orthotic device body. A first sensor may provide a first output responsive to pressure resulting from application of mechanical force to the orthotic device body. A second sensor may provide a second output responsive to flexing resulting from the application of mechanical force to the orthotic device body. The device may also include a control unit communicatively coupled with the sensors to receive and process the outputs provided by the sensors in response to pressure and flexing. Other embodiments may be described and/or claimed.

Abstract: A device to output two or more coordinated haptic effects, comprising, a first haptic effect generator to output a first haptic effect, a second haptic effect generator to output a second haptic effect and a processor to coordinate operation of the second haptic effect generator with operation of the first haptic effect generator based on an input provided to the processor.

Abstract: Embodiments of shielding apparatuses are disclosed herein. In some embodiments, a shielding apparatus may include first and second conductive regions and a plurality of vias disposed between the first and second conductive regions. The first and second conductive regions and the plurality of vias may surround an integrated circuit (IC) component and individual vias of the plurality of vias are spaced relative to one another to shield incoming or outgoing electromagnetic interference (EMI). Other embodiments may be described and/or claimed.

Abstract: Embodiments include apparatuses, methods, and systems for jitter equalization and phase error detection. In embodiments, a communication circuit may include a data path to pass a data signal and a clock path to pass a clock signal. A jitter equalizer may be coupled with the data path and/or clock path to provide a programmable delay to the data signal and/or clock signal, respectively. The delay may be determined by a training process in which a supply voltage may be modulated by a modulation frequency. The delay may be dependent on a value of the supply voltage, such as a voltage level and/or jitter frequency component of the supply voltage. A phase error detector is also described that may be used with the communication circuit and/or other embodiments.

Abstract: A voltage regulator for one or more dies in a multi-stack integrated circuit includes an inductor located on a die, a voltage controller that is electrically coupled to the inductor and is also located on the die, and a capacitor that is electrically coupled to the inductor and the voltage controller and is also located on the die. The inductor defines an interior space and the voltage controller and the capacitor are located within the interior space of the inductor. The inductor can be a lateral inductor or a through layer via inductor. The multi-stack integrated circuit may have multiple dies. A voltage controller may be electrically coupled to each of the dies, although it may be located on only one of the dies. Alternatively, separate voltage controllers may be electrically coupled to each of the multiple dies and may be located on each of the respective dies.

Abstract: Separate microchannel voltage domains in a stacked memory architecture An embodiment of a memory device includes a memory stack including one or more coupled memory dies, wherein a first memory die of the memory stack includes multiple microchannels, and a logic chip coupled with the memory stack, the logic chip including a memory controller. Each of the microchannels includes a separate voltage domain, and a voltage level is controlled for each of the plurality of microchannels.

Abstract: Dynamic operations for operations for 3D stacked memory using thermal data. An embodiment of a memory device includes memory having multiple coupled memory elements and multiple thermal sensors, including a first thermal sensor in a first area of the memory stack and a second thermal sensor in a second area of the memory stack. A memory controller is to provide operations to modify thermal conditions of the memory elements based at least in part on thermal information generated by the thermal sensors.

Abstract: Described is an apparatus which comprises: a first bridge to be coupled to a first load; a first Pulse Width Modulation (PWM) circuit to drive the first bridge; a second bridge to be coupled to a second load; and a second PWM circuit to drive the second bridge, wherein the first PWM circuit is controlled by a first digital word separate from a second digital word, wherein the second PWM circuit is controlled by the second digital, and wherein the second digital word is derived from the first digital word.

Abstract: Embodiments of shielding apparatuses are disclosed herein. In some embodiments, a shielding apparatus may include first and second conductive regions and a plurality of vias disposed between the first and second conductive regions. The first and second conductive regions and the plurality of vias may surround an integrated circuit (IC) component and individual vias of the plurality of vias are spaced relative to one another to shield incoming or outgoing electromagnetic interference (EMI). Other embodiments may be described and/or claimed.

Abstract: A memory controller operable for selective memory access to areas of memory exhibiting different attributes leverages different memory capabilities that vary access speed, retention time and power consumption, among others. Different areas of memory have different attributes while remaining available to applications as a single contiguous range of addressable memory. The memory controller employs an operating mode that identifies operational priorities for a computing device, such as speed, power conservation, or efficiency. The memory controller identifies an area of memory based on an expected usage of the data stored in the area, for example an access frequency indicating future retrieval. The memory controller therefore selects areas of memory based on the operating mode and the expected usage of data to be stored in the area according to a heuristic that favors areas of memory based on those exhibiting attributes having a high correspondence to the expected usage of the data.

Abstract: A patch antenna system comprising: an integrated circuit die having an active side including an active layer, and a backside; a dielectric layer formed on the backside; and a redistribution layer formed on the dielectric layer wherein the redistribution layer forms an array of patches. The patch antenna further comprises a plurality of through-silicon vias (TSV), wherein the TSVs electrically connect the array of patches to the active layer.

Abstract: Resonant clocking for three-dimensional stacked devices. An embodiment of an apparatus includes a stack including integrated circuit dies; and through silicon vias through at least one of the dies, wherein at least a first through silicon via of the through silicon vias includes a capacitive structure or an inductive structure, the first through silicon via being formed in a first die of the plurality of dies. The apparatus includes a resonant circuit, the first through silicon via used as a first circuit element of the resonant circuit.

Abstract: A 3D memory that is configurable for performance and power. An embodiment of a memory device includes a dynamic random-access memory (DRAM) including multiple memory dies, each memory die including multiple memory arrays, each memory array including peripheral logic circuits and a configurable logic. The memory device further includes a system element coupled with the DRAM, the system element including a memory controller. The memory controller is to provide for control of the configurable logic to provide for separate or shared peripheral logic circuits for one or more memory arrays, the configurable logic being configurable to enable or disable one or more of the peripheral logic circuits and to enable or disable one or more I/O connections between the memory arrays.

Abstract: Magnetically enhanced inductors integrated with microelectronic devices at chip-level. In embodiments, magnetically enhanced inductors include a through substrate vias (TSVs) with fill metal to carry an electrical current proximate to a magnetic layer disposed on a substrate through which the TSV passes. In certain magnetically enhanced inductor embodiments, a TSV fill metal is disposed within a magnetic material lining the TSV. In certain magnetically enhanced inductor embodiments, a magnetically enhanced inductor includes a plurality of interconnected TSVs disposed proximate to a magnetic material layer on a side of a substrate. In embodiments, voltage regulation circuitry disposed on a first side of a substrate is integrated with one or more magnetically enhanced inductors utilizing a TSV passing through the substrate.

Abstract: A 3D memory that is configurable for performance and power. An embodiment of a memory device includes a dynamic random-access memory (DRAM) including multiple memory dies, each memory die including multiple memory arrays, each memory array including peripheral logic circuits and a configurable logic. The memory device further includes a system element coupled with the DRAM, the system element including a memory controller. The memory controller is to provide for control of the configurable logic to provide for separate or shared peripheral logic circuits for one or more memory arrays, the configurable logic being configurable to enable or disable one or more of the peripheral logic circuits and to enable or disable one or more I/O connections between the memory arrays.

Abstract: A voltage regulator for one or more dies in a multi-stack integrated circuit includes an inductor located on a die, a voltage controller that is electrically coupled to the inductor and is also located on the die, and a capacitor that is electrically coupled to the inductor and the voltage controller and is also located on the die. The inductor defines an interior space and the voltage controller and the capacitor are located within the interior space of the inductor. The inductor can be a lateral inductor or a through layer via inductor. The multi-stack integrated circuit may have multiple dies. A voltage controller may be electrically coupled to each of the dies, although it may be located on only one of the dies. Alternatively, separate voltage controllers may be electrically coupled to each of the multiple dies and may be located on each of the respective dies.

Abstract: Dynamic operations for operations for 3D stacked memory using thermal data. An embodiment of a memory device includes memory having multiple coupled memory elements and multiple thermal sensors, including a first thermal sensor in a first area of the memory stack and a second thermal sensor in a second area of the memory stack. A memory controller is to provide operations to modify thermal conditions of the memory elements based at least in part on thermal information generated by the thermal sensors.

Abstract: Multiple dies can be stacked in what are commonly referred to as three-dimensional modules (or “stacks”) with interconnections between the dies, resulting in an IC module with increased circuit component capacity. Such structures can result in lower parasitics for charge transport to different components throughout the various different layers. In some embodiments, the present invention provides efficient power distribution approaches for supplying power to components in the different layers. For example, voltage levels for global supply rails may be increased to reduce required current densities for a given power objective.

Abstract: Embodiments of the invention relate to apparatus and method for reducing electromagnetic interference (EMI) and radio frequency interference (RFI) in computer systems via a chaotic frequency modulation. In one embodiment, an apparatus comprises a first cell comprising a chaotic signal generator to generate a chaotic signal and a phase-locked loop (PLL) to generate a modulated output signal based at least on an un-modulated reference signal and the chaotic signal.