Abstract: The yield of a peeling process is improved. A first step of forming a peeling layer to a thickness of greater than or equal to 0.1 nm and less than 10 nm over a substrate; a second step of forming, on the peeling layer, a layer to be peeled including a first layer in contact with the peeling layer; a third step of separating parts of the peeling layer and parts of the first layer to form a peeling trigger; and a fourth step of separating the peeling layer and the layer to be peeled are performed. The use of the thin peeling layer can improve the yield of a peeling process regardless of the structure of the layer to be peeled.

Abstract: A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover. The organic film is removed by utilizing low adhesion of an interface between the organic compound-containing layer and the electrode terminal, whereby the electrode terminal can be exposed without damage to the electrode terminal.

Abstract: To improve the yield in a peeling process and improve the yield in a manufacturing process of a flexible light-emitting device or the like, a peeling method includes a first step of forming a peeling layer over a first substrate, a second step of forming a layer to be peeled including a first layer in contact with the peeling layer over the peeling layer, a third step of curing a bonding layer in an overlapping manner with the peeling layer and the layer to be peeled, a fourth step of removing part of the first layer overlapping with the peeled layer and the bonding layer to form a peeling starting point, and a fifth step of separating the peeling layer and the layer to be peeled. The peeling starting point is preferably formed by laser light irradiation.

Abstract: A device for forming a separation starting point that allows separation of a surface layer of a processed member to form a remaining portion is provided. A manufacturing device of a stack including a support and a remaining portion of a processed member whose surface layer is separated is provided. The device for forming the separation starting point includes a stage that supports the processed member, a cutter that faces the stage, a head portion that supports the cutter, an arm portion that supports the head portion, and a moving mechanism that relatively moves the cutter to the stage.

Abstract: To improve the yield in a peeling process and improve the yield in a manufacturing process of a flexible light-emitting device or the like, a peeling method includes a first step of forming a peeling layer over a first substrate, a second step of forming a layer to be peeled including a first layer in contact with the peeling layer over the peeling layer, a third step of curing a bonding layer in an overlapping manner with the peeling layer and the layer to be peeled, a fourth step of removing part of the first layer overlapping with the peeled layer and the bonding layer to form a peeling starting point, and a fifth step of separating the peeling layer and the layer to be peeled. The peeling starting point is preferably formed by laser light irradiation.

Abstract: A display device with improved viewing angle characteristics is provided. A display device with suppressed mixture of colors between adjacent pixels is provided. The display device includes a first coloring layer, a second coloring layer, and a structure body therebetween. The structure body has a portion closer to a display surface side than a bottom surface of the first coloring layer or a bottom surface of the second coloring layer.

Abstract: An information processing apparatus includes: a touchpad module; a cover including a touch operation portion configured to cover a face of the touchpad module and a button opening formed along a horizontal side portion of the touch operation portion; an operation button arranged in the button opening; and a base member, arranged on an opposite side of the cover with respect to the touchpad module and the operation button, configured to support the touchpad module and the operation button, an end portion of the base member on the touchpad module side being arranged closer to the operation button than a central portion in a vertical side direction of the touchpad module when viewed from a thickness direction of the touchpad module.

Abstract: A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover. The organic film is removed by utilizing low adhesion of an interface between the organic compound-containing layer and the electrode terminal, whereby the electrode terminal can be exposed without damage to the electrode terminal.

Abstract: A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover. The organic film is removed by utilizing low adhesion of an interface between the organic compound-containing layer and the electrode terminal, whereby the electrode terminal can be exposed without damage to the electrode terminal.

Abstract: A method for manufacturing a circuit board includes a first process, a second process, a third process, and a fourth process. The first process includes a step of providing a circuit and an electrode over a first surface of a first substrate. The second process includes a step of providing a reflective layer on the first surface side of the first substrate or a second surface side of a second substrate. The third process includes a step of attaching the first surface and the second surface to each other with a bonding layer therebetween to face each other so that the reflective layer overlaps with the electrode and the reflective layer surrounds part of the electrode. The fourth process includes a step of irradiating at least part of the reflective layer with laser light from a side opposite to the electrode.

Abstract: An embodiment of the present invention is a microcrystalline semiconductor film having a thickness of more than or equal to 70 nm and less than or equal to 100 nm and including a crystal grain partly projecting from a surface of the microcrystalline semiconductor film. The crystal grain has an orientation plane and includes a crystallite having a size of 13 nm or more. Further, the film density of the microcrystalline semiconductor film is higher than or equal to 2.25 g/cm3 and lower than or equal to 2.35 g/cm3, preferably higher than or equal to 2.30 g/cm3 and lower than or equal to 2.33 g/cm3.

Abstract: The yield of a peeling process is improved. A first step of forming a peeling layer to a thickness of greater than or equal to 0.1 nm and less than 10 nm over a substrate; a second step of forming, on the peeling layer, a layer to be peeled including a first layer in contact with the peeling layer; a third step of separating parts of the peeling layer and parts of the first layer to form a peeling trigger; and a fourth step of separating the peeling layer and the layer to be peeled are performed. The use of the thin peeling layer can improve the yield of a peeling process regardless of the structure of the layer to be peeled.

Abstract: A device for forming a separation starting point that allows separation of a surface layer of a processed member to form a remaining portion is provided. A manufacturing device of a stack including a support and a remaining portion of a processed member whose surface layer is separated is provided. The device for forming the separation starting point includes a stage that supports the processed member, a cutter that faces the stage, a head portion that supports the cutter, an arm portion that supports the head portion, and a moving mechanism that relatively moves the cutter to the stage.

Abstract: To improve the yield in a peeling process and improve the yield in a manufacturing process of a flexible light-emitting device or the like, a peeling method includes a first step of forming a peeling layer over a first substrate, a second step of forming a layer to be peeled including a first layer in contact with the peeling layer over the peeling layer, a third step of curing a bonding layer in an overlapping manner with the peeling layer and the layer to be peeled, a fourth step of removing part of the first layer overlapping with the peeled layer and the bonding layer to form a peeling starting point, and a fifth step of separating the peeling layer and the layer to be peeled. The peeling starting point is preferably formed by laser light irradiation.

Abstract: A seed crystal including mixed phase grains having high crystallinity at a low density is formed under a first condition over an insulating film, and then a first microcrystalline semiconductor film is formed over the seed crystal under a second condition that allows the mixed phase grains to grow and a space between the mixed phase grains to be filled. Then, a second microcrystalline semiconductor film is formed over the first microcrystalline semiconductor film under a third condition that allows formation of a microcrystalline semiconductor film having high crystallinity without increasing the space between the mixed phase grains included in the first microcrystalline semiconductor film.

Abstract: A method for manufacturing a semiconductor device comprises the steps of forming a seed over the insulating film by introducing hydrogen and a deposition gas into a first treatment chamber under a first condition and forming a microcrystalline semiconductor film over the seed by introducing hydrogen and the deposition gas into a second treatment chamber under a second condition: a second flow rate of the deposition gas is periodically changed between a first value and a second value; and a second pressure in the second treatment chamber is higher than or equal to 1.0×102 Torr and lower than or equal to 1.0×103 Torr.

Abstract: A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover. The organic film is removed by utilizing low adhesion of an interface between the organic compound-containing layer and the electrode terminal, whereby the electrode terminal can be exposed without damage to the electrode terminal.

Abstract: A seed crystal which includes mixed phase grains including an amorphous silicon region and a crystallite which is a microcrystal that can be regarded as a single crystal is formed on an insulating film by a plasma CVD method under a first condition that enables mixed phase grains having high crystallinity and high uniformity of grain sizes to be formed at a low density, and then a microcrystalline semiconductor film is formed to be stacked on the seed crystal by a plasma CVD method under a second condition that enables the mixed phase grains to grow to fill a space between the mixed phase grains.

Abstract: To provide a manufacturing method of a microcrystalline silicon film having both high crystallinity and high film density. In the manufacturing method of a microcrystalline silicon film according to the present invention, a first microcrystalline silicon film that includes mixed phase grains is formed over an insulating film under a first condition, and a second microcrystalline silicon film is formed thereover under a second condition. The first condition and the second condition are a condition in which a deposition gas containing silicon and a gas containing hydrogen are used as a first source gas and a second source gas. The first source gas is supplied under the first condition in such a manner that supply of a first gas and supply of a second gas are alternately performed.

Abstract: A thin film transistor is provided with a high crystallized region in a channel formation region and a high resistance region between a source and a drain, and thus has a high electric effect mobility and a large on current. The thin film transistor includes an “impurity which suppresses generation of crystal nuclei” contained in the base layer or located on its surface, a first wiring layer over a base layer, an impurity semiconductor layer over the first wiring, a semiconductor layer over the impurity semiconductor layer, the semiconductor layer comprises a crystalline region and a region containing an amorphous phase which is formed adjacent to the base layer.