Abstract: Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si—N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si—N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).

Abstract: Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.

Abstract: A zinc oxide (ZnO) precursor and a method of depositing a ZnO-based thin film using the same, with which a high-quality and high-purity ZnO-based thin film can be deposited. The ZnO precursor includes a mixture solvent containing at least two organic solvents which are mixed and a source material comprising diethyl zinc or dimethyl zinc which is diluted in the mixture solvent.

Abstract: Provided are a novel trisilyl amine derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.

Abstract: Provided are a novel cyclodisilazane derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the cyclodisilazane derivative having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under a pressure where handling is easy, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.

Abstract: The present invention relates to a novel multipurpose polymer and a composition containing the same. The polymer and the composition of the present invention are very useful for preparing a semiconductor device having very good mechanical and optical properties.

Abstract: Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.

Abstract: Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.

Abstract: The present invention relates to a new transition metal compound based on cyclopenta[b]fluorenyl group, a transition metal catalyst composition containing the same and having high catalytic activity for preparing an ethylene homopolymer or a copolymer of ethylene and one ?-olefin, a method of preparing an ethylene homopolymer or a copolymer of ethylene and ?-olefin using the same, and the prepared ethylene homopolymer or the copolymer of ethylene and ?-olefin.

Abstract: An organometallic precursor is represented by a chemical formula of Xn(M)(R1)m(R2)k. M is a central metal. X is a ligand of M and one of 6,6-dimethylfulvenyl, indenyl, cyclopentadienyl and cyclopentadienyl substituted with an amino group. R1 and R2 are ligands of M, and each independently an amino group or an ethylenediamino group. Each n, m and k is a positive integer, and a sum of n, m and k is equal to 3 or 4.

Abstract: The present invention relates to a negative electrode active material for an electrode mixture, and to an electrochemical cell comprising the negative electrode active material, wherein the negative electrode active material comprises an amorphous carbonaceous material and a doping element, and exhibits, in the temperature range of 450° C. to 950° C., at least two peaks of derivative weight change calculated by thermogravimetric analysis, and exhibits a maximum heat peak output of 20 mW to 60 mW as measured by differential scanning calorimetry.

Abstract: The present invention relates to a new transition metal compound based on cyclopenta[b]fluorenyl group, a transition metal catalyst composition containing the same and having high catalytic activity for preparing an ethylene homopolymer or a copolymer of ethylene and one ?-olefin, a method of preparing an ethylene homopolymer or a copolymer of ethylene and ?-olefin using the same, and the prepared ethylene homopolymer or the copolymer of ethylene and ?-olefin.

Abstract: The present invention relates to an electrical safety diagnosis system and apparatus, which are configured to enable sensed data on user surroundings in a U-city environment, such as electrical safety data for switchboards and distribution boards, and water leakages, faulty outlet connections, etc., to be managed remotely by a server at a U-city integrated information center. In particular, the present invention relates to an electrical safety diagnosis system and apparatus which use a U-city integrated information network to preemptively perform checking and analyzes for potential electrically-induced disasters that can occur in public facilities, stores, buildings, and homes within a U-city, by means of a U-city integrated information center, and prevent electrical fires or shocks at the electrical equipment of switchboards or distribution boards, and dangerous conditions (such as water leakages, abnormal temperatures, gas, and faulty outlet connections) in facilities used by users.

Abstract: A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains a zincocene having the following formula or a derivative thereof: where R1 and R2 are hydrogen or CnH2n+1. The n is a number selected from 1 to 3, and the R1 and R2 is one selected from the group consisting of hydrogen, a methyl group, an ethyl group and an i-propyl group. A method of depositing a zinc oxide-based thin film includes the following steps of: loading a substrate into a deposition chamber; and supplying the above-described zinc oxide precursor and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. In an exemplary embodiment, the zinc oxide-based thin film may be formed on the substrate via atmospheric pressure chemical vapor deposition.

Abstract: The present invention relates to a method of preparing an ethylene-?-olefin-diene copolymer and an ethylene-?-olefin-diene copolymer prepared thereby, by using a transition metal compound based on a cyclopenta[b]fluorenyl group as a catalyst.

Abstract: Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.

Abstract: A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains an alkyl zinc halide having the following formula: R—Zn—X, where R is an alkyl group CnH2n+1, and X is a halogen group. The n is a number ranging from 1 to 4, and the alkyl group is one selected from among a methyl group, an ethyl group, an i-propyl group and a t-butyl group. The halogen group contains one selected from among F, Br, Cl and I. A method of depositing a zinc oxide-based thin film includes loading a substrate into a deposition chamber; and supplying the zinc oxide precursor which contains the above-described alkyl zinc halide and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. The zinc oxide-based thin film is deposited on the substrate via atmospheric pressure chemical vapor deposition.

Abstract: The present invention relates to a method of preparing an ethylene-?-olefin-diene copolymer and an ethylene-?-olefin-diene copolymer prepared thereby, by using a transition metal compound based on a cyclopenta[b]fluorenyl group as a catalyst.

Abstract: A zinc oxide (ZnO) precursor and a method of depositing a ZnO-based thin film using the same, with which a high-quality and high-purity ZnO-based thin film can be deposited. The ZnO precursor includes a mixture solvent containing at least two organic solvents which are mixed and a source material comprising diethyl zinc or dimethyl zinc which is diluted in the mixture solvent.

Abstract: The present invention relates to a new transition metal compound based on cyclopenta[b]fluorenyl group, a transition metal catalyst composition containing the same and having high catalytic activity for preparing an ethylene homopolymer or a copolymer of ethylene and one ?-olefin, a method of preparing an ethylene homopolymer or a copolymer of ethylene and ?-olefin using the same, and the prepared ethylene homopolymer or the copolymer of ethylene and ?-olefin.