Abstract: An imaging device that includes pixels arranged in a matrix having rows and columns, the pixels including first pixels and second pixels different from the first pixels, the first pixels and the second pixels being located in one of the columns, each of the pixels including a photoelectric converter that converts incident light into signal charge, and a first transistor having a first gate, a first source and a first drain, the first gate being coupled to the photoelectric converter. The imaging device further includes a first line coupled to one of the first source and drain of the first pixels; a second line coupled to one of the first source and drain of the second pixels; a third line coupled to the other of the first source and drain of the first pixels; and voltage circuitry coupled to the third line and that supplies a first and second voltage.

Abstract: An imaging device includes a pixel electrode, a counter electrode that faces the pixel electrode, a first photoelectric conversion layer that is located between the pixel electrode and the counter electrode and that generates first signal charge, a second photoelectric conversion layer that is located between the first photoelectric conversion layer and the pixel electrode and that generates second signal charge, a first barrier layer that is located between the first photoelectric conversion layer and the second photoelectric conversion layer and that forms a first heterojunction barrier against the first signal charge in the first photoelectric conversion layer, and a charge accumulator that is electrically connected to the pixel electrode and that accumulates the first signal charge and the second signal charge.

Abstract: An imaging device includes: a first imaging cell including a first photoelectric converter that generates a first signal by photoelectric conversion, and a first signal processing circuit that is electrically connected to the first photoelectric converter and detects the first signal; and a second imaging cell including a second photoelectric converter that generates a second signal by photoelectric conversion, and a second signal processing circuit that is electrically connected to the second photoelectric converter and detects the second signal. Sensitivity of the first imaging cell is higher than sensitivity of the second imaging cell. The first signal processing circuit has a circuit configuration different from the second signal processing circuit. An operation frequency of the first signal processing circuit is different from an operation frequency of the second signal processing circuit.

Abstract: An imaging device includes: a semiconductor substrate; pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate; a counter electrode located above the pixel electrodes; a first photoelectric conversion layer located between the counter electrode and the pixel electrodes; and at least one first light-shielding body located in or above the first photoelectric conversion layer. The first photoelectric conversion layer contains a semiconducting carbon nanotube that absorbs light in a first wavelength range and an organic molecule that covers the semiconducting carbon nanotube, absorbs light in a second wavelength range, and emits fluorescence in a third wavelength range. The at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.

Abstract: An imaging device includes a pixel electrode, a counter electrode, a first quantum dot that includes a first core which generates first signal charge and a first shell, a second quantum dot that includes a second core which generates second signal charge and a second shell. In a case where the potential difference between the pixel electrode and the counter electrode is a first potential difference, the first signal charge does not pass through the first shell and is held in the first core and the second signal charge passes through the second shell and is collected by the pixel electrode. In a case where the potential difference between the pixel electrode and the counter electrode is a second potential difference which is larger than the first potential difference, the first signal charge passes through the first shell and is collected by the pixel electrode.

Abstract: A light sensor includes a photoelectric conversion layer and a long-pass filter that is disposed above the photoelectric conversion layer. The photoelectric conversion layer has a spectral sensitivity characteristic having a first peak at a first wavelength that is longer than a cut-on wavelength of the long-pass filter, and a spectral sensitivity of the photoelectric conversion layer at the cut-on wavelength is greater than or equal to 0% and less than or equal to 50% of a spectral sensitivity of the photoelectric conversion layer at the first wavelength.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Abstract: An imaging device includes: a first pixel and a second pixel that are arranged along a first direction and each include a photoelectric converter, a charge accumulator, a first transistor one of a source and a drain of which is connected to the charge accumulator, and a second transistor a gate of which is connected to the charge accumulator; a first line and a second line that each extend along the first direction; a first voltage supply circuit configured to generate a voltage between a first voltage turning on the first transistor of the first pixel and a second voltage turning off the first transistor of the first pixel; and a second voltage supply circuit configured to generate a voltage between a fourth voltage turning on the first transistor of the second pixel and a fifth voltage turning off the first transistor of the second pixel.

Abstract: An imaging device including an imaging cell including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, and a first transistor one of a source and a drain of which is coupled to the first electrode; and voltage supply circuitry coupled to the other of the source and the drain of the first transistor, the voltage supply circuitry being configured to supply a first voltage in a first period and a second voltage different from the first voltage in a second period different from the first period.

Abstract: An imaging device including: pixel cells arranged in a matrix having rows and columns, the pixel cells including first pixel cells and different second pixel cells, each of the pixel cells having: a photoelectric converter that converts incident light into signal charge, a first transistor having a first gate, a first source and a first drain, the first gate coupled to the photoelectric converter, and a second transistor having a second gate, a second source and a second drain, either the first source or the first drain electrically coupled to the photoelectric converter via the second transistor. The imaging device further including a first line coupled to one of the first source and the first drain of each of the first pixel cells; and a second line coupled to one of the first source and the first drain of each of the second pixel cells.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Abstract: An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 ?m or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 ?m or longer and shorter than 1.1 ?m is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 ?m or longer.

Abstract: An imaging device including a semiconductor substrate including a pixel region and a peripheral region; an insulating layer covering the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer covering the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry electrically connected to the first electrodes; peripheral circuitry electrically connected to the detection circuitry, and; and a third electrode located on the insulating layer.

Abstract: An imaging device including a semiconductor substrate; a first pixel including a first photoelectric converter configured to convert incident light into charge, and a first diffusion region in the semiconductor substrate, configured to electrically connected to the first photoelectric converter and a second pixel including a second photoelectric converter, configured to convert incident light into charge, and a second diffusion region in the semiconductor substrate, configured to electrically connected to the second photoelectric converter, wherein an area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, both the first diffusion region and the second diffusion region overlap with the first photoelectric converter in the plan view, and neither the first diffusion region nor the second diffusion region overlaps with the second photoelectric converter in the plan view.

Abstract: An imaging device includes: a first chip that includes pixels arranged in a row, the pixels including: a first pixel including a first photoelectric converter and a first transistor, having a first control terminal, coupled to the first photoelectric converter; and a second pixel including a second photoelectric converter and a second transistor, having a second control terminal, coupled to the second photoelectric converter; and a second chip including: a signal line extending along the row; a first buffer circuit having a first input terminal and a first output terminal, the first input terminal being coupled to the signal line, the first output terminal being coupled to the first control terminal; and a second buffer circuit having a second input terminal and a second output terminal, the second input terminal being coupled to the signal line, the second output terminal being coupled to the second control terminal.

Abstract: A camera system includes an imaging device configured to change sensitivity according to an instruction from a user; a display; and a graphic interface unit that causes the display to selectively display a first image for receiving the instruction for continuously changing the sensitivity and a second image for receiving the instruction for changing the sensitivity stepwise.

Abstract: An imaging device includes a pixel, the pixel including a photoelectric converter which converts light into a signal charge and a charge detection circuit which detects the signal charge. The photoelectric converter includes a photoelectric conversion layer having a first surface and a second surface opposite to the first surface, a pixel electrode on the first surface, a first electrode adjacent to the pixel electrode on the first surface, the first electrode being electrically conductive to the photoelectric conversion layer, and a counter electrode on the second surface, the counter electrode facing the pixel electrode and the first electrode. A shortest distance between the pixel electrode and the first electrode in a plan view is smaller than a shortest distance between the pixel electrode and the first electrode.

Abstract: An optical sensor including: a semiconductor layer including a source region and a drain region; a gate electrode facing a region between the source region and the drain region; a photoelectric conversion layer between the region and the gate electrode; and a first transistor having a first gate coupled to one of the source region and the drain region.

Abstract: An imaging device includes: a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; a second electrode that covers the photoelectric conversion layer; detection circuitry located in the pixel region and connected to the first electrode; peripheral circuitry located in the peripheral region and connected to the detection circuitry; and a third electrode located on the insulating layer above the peripheral region. The second electrode extends above the peripheral region, and the second electrode includes a connection region in which the second electrode is connected to the third electrode, the connection region overlapping the peripheral circuitry in plan view.

Abstract: An imaging device includes a first substrate and a second substrate stacked thereon. The first substrate includes: a photoelectric converter that converts incident light into a signal charge; a first transistor that outputs a signal corresponding to the signal charge, a gate of the first transistor being connected to the photoelectric converter; and a second transistor, one of a source and a drain thereof being connected to the photoelectric converter, the other of the source and the drain thereof being connected to a source or a drain of the first transistor. The second substrate includes: a constant current source circuit that is connected to one of the source and the drain of the first transistor; and a bias circuit that is connected to the other of the source and the drain of the first transistor and that generates a first voltage and a second voltage different therefrom.