Abstract: An imaging device including a first imaging cell having a first photoelectric converter including a first electrode, a second electrode, and a first photoelectric conversion layer between the first electrode and the second electrode, and a first reset transistor one of a source and a drain of which is coupled to the first electrode; and a second imaging cell having a second photoelectric converter including a third electrode, a fourth electrode, and a second photoelectric conversion layer between the third electrode and the fourth electrode, and a second reset transistor one of a source and a drain of which is coupled to the third electrode. The imaging device further including a first voltage supply circuitry to supply a first voltage to the first reset transistor; and a second voltage supply circuitry to supply a second voltage different from the first voltage to the second reset transistor.

Abstract: An imaging device includes: a semiconductor substrate; a first pixel including: a first photoelectric converter above the semiconductor substrate, including first and second electrodes and a first photoelectric conversion layer between the first and second electrodes, configured to convert incident light into first charge; and a first charge accumulation region in the semiconductor substrate, electrically connected to the second electrode; and a second pixel including a second photoelectric converter above the semiconductor substrate, including third and fourth electrodes and a second photoelectric conversion layer between the third and fourth electrodes, configured to convert incident light into second charge; and a second charge accumulation region in the semiconductor substrate, electrically connected to the fourth electrode.

Abstract: An imaging device includes a photoelectric converter including a pixel electrode, a counter electrode, and a photoelectric conversion layer between the pixel electrode and the counter electrode, the photoelectric conversion layer converting incident light into an electric charge; and a voltage application circuit that applies a first voltage between the pixel electrode and the counter electrode in a first frame and that applies a second voltage between the pixel electrode and the counter electrode in a second frame different from the first frame, the first voltage being a constant voltage, the second voltage being a pulse-shaped voltage.

Abstract: An imaging device includes a pixel including a permittivity modulation element that includes opposite and pixel electrodes and a permittivity modulation structure whose permittivity changes according to the radiation of light, a capacitive element that includes first and second electrodes, and a detection circuit that outputs a signal corresponding to the potential of the pixel electrode. Also provided are a voltage supply circuit that applies first and second voltages in different first and second periods to one of the opposite electrode and the first electrode, and a signal processing circuit that generates a third signal being a difference between a first signal output from the detection circuit in the first period and a second signal output from the detection circuit in the second period. The potential difference between the opposite electrode and the first electrode when the second voltage is applied is less than when the first voltage is applied.

Abstract: An imaging device having a semiconductor substrate that includes a first photoelectric converter, and a second photoelectric converter adjacent to the first photoelectric converter. The imaging device further includes a capacitive element one end of which is coupled to the first photoelectric converter, where the first capacitive element at least partly overlaps, in a plan view, with the second photoelectric converter.

Abstract: A method for controlling an imaging device having a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band, and that allows switching of an operation mode from the first mode to the second mode or from the second mode to the first mode. The method including causing the imaging device to perform imaging in the first mode or the second mode; determining, with a predetermined frequency or in response to a predetermined trigger, whether to maintain a current operation mode or switch the current operation mode on the basis of first image information in the first imaging wavelength band and second image information in the second imaging wavelength band; and in accordance with the determination, selectively maintaining the current operation mode or switching the current operation mode.

Abstract: A three-dimensional motion obtaining apparatus includes: a light source; a charge amount obtaining circuit that includes pixels and obtains, for each of the pixels, a first charge amount under a first exposure pattern and a second charge amount under a second exposure pattern having an exposure period that at least partially overlaps an exposure period of the first exposure pattern; and a processor that controls a light emission pattern for the light source, the first exposure pattern, and the second exposure pattern. The processor estimates a distance to a subject for each of the pixels on the basis of the light emission pattern and on the basis of the first charge amount and the second charge amount of each of the pixels obtained by the charge amount obtaining circuit, and estimates an optical flow for each of the pixels on the basis of the first exposure pattern, the second exposure pattern, and the first charge amount and the second charge amount obtained by the charge amount obtaining circuit.

Abstract: In one general aspect, the techniques disclosed here feature an imaging device that includes: a semiconductor substrate; a first pixel cell including a first photoelectric converter in the semiconductor substrate, and a first capacitive element one end of which is electrically connected to the first photoelectric converter; and a second pixel cell including a second photoelectric converter in the semiconductor substrate. An area of the second photoelectric converter is larger than an area of the first photoelectric converter in a plan view.

Abstract: An imaging device including a first imaging cell having a first photoelectric converter including a first electrode, a second electrode, and a first photoelectric conversion layer between the first electrode and the second electrode, and a first reset transistor one of a source and a drain of which is coupled to the first electrode; and a second imaging cell having a second photoelectric converter including a third electrode, a fourth electrode, and a second photoelectric conversion layer between the third electrode and the fourth electrode, and a second reset transistor one of a source and a drain of which is coupled to the third electrode. The imaging device further including a first voltage supply circuitry to supply a first voltage to the first reset transistor; and a second voltage supply circuitry to supply a second voltage different from the first voltage to the second reset transistor.

Abstract: An imaging device includes: a first chip that includes pixels arranged in a row, the pixels including: a first pixel including a first photoelectric converter and a first transistor, having a first control terminal, coupled to the first photoelectric converter; and a second pixel including a second photoelectric converter and a second transistor, having a second control terminal, coupled to the second photoelectric converter; and a second chip including: a signal line extending along the row; a first buffer circuit having a first input terminal and a first output terminal, the first input terminal being coupled to the signal line, the first output terminal being coupled to the first control terminal; and a second buffer circuit having a second input terminal and a second output terminal, the second input terminal being coupled to the signal line, the second output terminal being coupled to the second control terminal.

Abstract: An imaging device including an imaging cell including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, and a first transistor one of a source and a drain of which is coupled to the first electrode; and voltage supply circuitry coupled to the other of the source and the drain of the first transistor, the voltage supply circuitry being configured to supply a first voltage in a first period and a second voltage different from the first voltage in a second period different from the first period.

Abstract: A photodetection device includes: a photoelectric converter generating charge; a first diffusion region having a first end connected to the photoelectric converter and a second end and extending in a first direction from the first end toward the second end; a second diffusion region having a third end connected to a first side surface, of the first diffusion region, which is along the first direction and a fourth end and extending in a second direction from the third end toward the fourth end; a first charge accumulator connected to the fourth end; a first gate electrode covering at least part of the first diffusion region; and a second gate electrode covering at least part of the second diffusion region. The second gate electrode covers a first portion of the first diffusion region without the first gate electrode intervention. The first portion is adjacent to the second diffusion region.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Abstract: An imaging device having pixels in a row which include: first pixel including a first photoelectric converter and a first transistor having a first control terminal; second pixel including a second photoelectric converter and a second transistor having a second control terminal; third pixel including a third photoelectric converter and a third transistor having a third control terminal; and fourth pixel including a fourth photoelectric converter and a fourth transistor having a fourth control terminal. The device further including input signal line, a signal for controlling the first to fourth transistors input to the signal line; first buffer circuit having a first input terminal coupled to the signal line, and a first output terminal coupled to the first and second control terminals; and second buffer circuit having a second input terminal coupled to the signal line and a second output terminal coupled to the second and third control terminals.

Abstract: An imaging device of the present disclosure includes: an imaging cell including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric converter generating signal charge by photoelectric conversion, and a charge detection circuit connected to the first electrode, the charge detection circuit detecting the signal charge; a signal line electrically coupled to the first electrode; and a voltage supply circuit selectively supplying a first voltage and a second voltage different from the first voltage to the signal line.

Abstract: An imaging device includes: a first pixel and a second pixel that are arranged along a first direction and each include a photoelectric converter, a charge accumulator, a first transistor one of a source and a drain of which is connected to the charge accumulator, and a second transistor a gate of which is connected to the charge accumulator; a first line and a second line that each extend along the first direction; a first voltage supply circuit configured to generate a voltage between a first voltage turning on the first transistor of the first pixel and a second voltage turning off the first transistor of the first pixel; and a second voltage supply circuit configured to generate a voltage between a fourth voltage turning on the first transistor of the second pixel and a fifth voltage turning off the first transistor of the second pixel.

Abstract: An imaging device of the present disclosure includes: a first and second imaging cells each including a photoelectric converter including a pixel electrode, an opposite electrode, and a photoelectric conversion layer between the pixel electrode and the opposite electrode, the photoelectric converter generating signal charge by photoelectric conversion, and charge detection circuit connected to the pixel electrode, the charge detection circuit detecting the signal charge; and a voltage supply circuit supplying a voltage such that, in a frame period, a potential difference between the pixel electrode and the opposite electrode of the first imaging cell at a start time of a charge accumulation period of the first imaging cell is made different from a potential difference between the pixel electrode and the opposite electrode of the second imaging cell at a start time of a charge accumulation period of the second imaging cell.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Abstract: A photodetector includes: a semiconductor substrate including first and second impurity regions; a gate insulating layer located on a region of the semiconductor substrate, the region being between the first and second impurity regions, the gate insulating layer including a photoelectric conversion layer; a gate electrode located on the gate insulating layer and having a light-transmitting property; a first charge transfer channel transferring signal charges corresponding to a current occurring between the first impurity region and the second impurity region depending on a change in a dielectric constant of the photoelectric conversion layer caused by light incidence on the photoelectric conversion layer; a second charge transfer channel diverging from the first charge transfer channel; a first charge storage storing charges, among the signal charges, transferred via the second charge transfer channel; and a first gate switching transfer and shutdown of charges passing through the second charge transfer chann

Abstract: A photodetection device includes: a photoelectric converter generating charge; a first channel having first and second ends, the first end being connected to the photoelectric converter, charge being transferred from the first end toward the second end; a second channel diverging from the first channel at a first position of the first channel; a third channel diverging from the first channel at a second position of the first channel; a first accumulator accumulating charge transferred from the first channel through the second channel; a second accumulator accumulating charge transferred from the first channel through the third channel; and at least one first gate electrode switching between transfer/cutoff of charge in the second channel, and switching between transfer/cutoff of charge in the third channel, a width of the first channel at the first end being greater than a width of the first channel at the second end in a plan view.