Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

Abstract: An imaging device includes: a pixel array including pixels including a first pixel and a second pixel, each of the pixels including a photoelectric converter that converts light into charge, the photoelectric converter including a first electrode, a second electrode facing the first electrode, and a photoelectric conversion layer between the first electrode and the second electrode; and an addition circuit that adds together a signal generated in the first pixel and a signal generated in the second pixel.

Abstract: A method for controlling an imaging device having a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band, and that allows switching of an operation mode from the first mode to the second mode or from the second mode to the first mode. The method including causing the imaging device to perform imaging in the first mode or the second mode; determining, with a predetermined frequency or in response to a predetermined trigger, whether to maintain a current operation mode or switch the current operation mode on the basis of first image information in the first imaging wavelength band and second image information in the second imaging wavelength band; and in accordance with the determination, selectively maintaining the current operation mode or switching the current operation mode.

Abstract: A camera system includes an imaging device that acquires a first image by a normal exposure including only one exposure and that acquires a second image by a multiple exposure including a plurality of exposures; and an image processor that extracts a feature value of a first object in the first image and that identifies one or more locations corresponding to the feature value in the second image.

Abstract: An optical sensor including: a semiconductor layer including a source region and a drain region; a gate electrode facing a region between the source region and the drain region; a photoelectric conversion layer between the region and the gate electrode; and a first transistor having a first gate coupled to one of the source region and the drain region.

Abstract: An imaging device includes: a pixel array including first and second pixels, each pixel including a photoelectric converter converting light into charge and a detection circuit detecting the charge; a first voltage supply circuit supplying a first voltage to the first pixel such that an electric potential of the first electrode is set to a first electric potential at a point of time at which a charge accumulation period for the first pixel starts; a second voltage supply circuit supplying a second voltage to the second pixel such that an electric potential of the first electrode of the second pixel is set to a second electric potential different from the first electric potential at a point of time at which a charge accumulation period for the second pixel starts; and an addition circuit adding together signals generated in the first and second pixels.

Abstract: A method is for controlling an imaging device that allows switching of an operation mode between a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band. The method includes: determining whether ambient light includes near-infrared light based on information obtained in the first mode and information obtained in the second mode; and maintaining or changing the operation mode.

Abstract: A photodetection device includes: a photoelectric converter generating charge; a first transfer channel having first and second ends, the first end being connected to the photoelectric converter, charge from the photoelectric converter being transferred from the first end toward the second end; a second transfer channel diverging from the first transfer channel at a first position; a third transfer channel diverging from the first transfer channel at a second position, further than the first position from the first end; a first charge accumulator accumulating charge transferred through the second transfer channel; a second charge accumulator accumulating charge transferred through the third transfer channel; a first gate electrode switching between transfer/cutoff of charge in the first transfer channel; and at least one second gate electrode switching between transfer/cutoff of charge in the second and third transfer channels, the third transfer channel being wider than the second transfer channel.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

Abstract: An imaging device includes: a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; a second electrode that covers the photoelectric conversion layer; detection circuitry located in the pixel region and connected to the first electrode; peripheral circuitry located in the peripheral region and connected to the detection circuitry; and a third electrode located on the insulating layer above the peripheral region. The second electrode extends above the peripheral region, and the second electrode includes a connection region in which the second electrode is connected to the third electrode, the connection region overlapping the peripheral circuitry in plan view.

Abstract: An optical sensor includes: a semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing to the semiconductor layer; a gate insulating layer between the third region and the gate electrode, the gate insulating layer including a photoelectric conversion layer; a signal detection circuit including a first signal detection transistor, a first input of the first signal detection transistor being electrically connected to the first region; a first transfer transistor connected between the first region and the first input; and a first capacitor having one end electrically connected to the first input. The signal detection circuit detects an electrical signal corresponding to a change of a dielectric constant of the photoelectric conversion layer, the change being caused by incident light.

Abstract: An imaging device including: pixel cells arranged in a matrix having rows and columns, the pixel cells including first pixel cells and different second pixel cells, each of the pixel cells having: a photoelectric converter that converts incident light into signal charge, a first transistor having a first gate, a first source and a first drain, the first gate coupled to the photoelectric converter, and a second transistor having a second gate, a second source and a second drain, either the first source or the first drain electrically coupled to the photoelectric converter via the second transistor. The imaging device further including a first line coupled to one of the first source and the first drain of each of the first pixel cells; and a second line coupled to one of the first source and the first drain of each of the second pixel cells.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

Abstract: An imaging device includes a photoelectric converter including a pixel electrode, a counter electrode, and a photoelectric conversion layer between the pixel electrode and the counter electrode, the photoelectric conversion layer converting incident light into an electric charge; and a voltage application circuit that applies a first voltage between the pixel electrode and the counter electrode in a first frame and that applies a second voltage between the pixel electrode and the counter electrode in a second frame different from the first frame, the first voltage being a constant voltage, the second voltage being a pulse-shaped voltage.

Abstract: An imaging device having pixels in a row which include: first pixel including a first photoelectric converter and a first transistor having a first control terminal; second pixel including a second photoelectric converter and a second transistor having a second control terminal; third pixel including a third photoelectric converter and a third transistor having a third control terminal; and fourth pixel including a fourth photoelectric converter and a fourth transistor having a fourth control terminal. The device further including input signal line, a signal for controlling the first to fourth transistors input to the signal line; first buffer circuit having a first input terminal coupled to the signal line, and a first output terminal coupled to the first and second control terminals; and second buffer circuit having a second input terminal coupled to the signal line and a second output terminal coupled to the second and third control terminals.

Abstract: An imaging device includes: pixel cells arranged in a matrix having rows and columns and including first and second pixel cells in one of the columns, each pixel cell comprising a photoelectric converter and a signal detection circuit detecting an electrical signal in the photoelectric converter and outputting an output signal; first and second output signal lines through which the output signals are output from each of the first and second pixel cells, respectively; and first and second feedback circuits that form, for each of the first and second pixel cells, first and second feedback paths negatively feeding back the electrical signals, respectively. The first and second pixel cells are arranged every n rows in the one of the columns where that n is an integer equal to or greater than two, the rows respectively having the first pixel cells being different from those respectively having the second pixel cells.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

Abstract: An imaging device includes: a semiconductor substrate; a first pixel including: a first photoelectric converter above the semiconductor substrate, including first and second electrodes and a first photoelectric conversion layer between the first and second electrodes, configured to convert incident light into first charge; and a first charge accumulation region in the semiconductor substrate, electrically connected to the second electrode; and a second pixel including a second photoelectric converter above the semiconductor substrate, including third and fourth electrodes and a second photoelectric conversion layer between the third and fourth electrodes, configured to convert incident light into second charge; and a second charge accumulation region in the semiconductor substrate, electrically connected to the fourth electrode.

Abstract: An imaging device includes a pixel cell including a photoelectric conversion layer having first and second surfaces, a pixel electrode on the first surface, an auxiliary electrode on the first surface, the auxiliary electrode surrounding the pixel electrode and being electrically insulated from the pixel electrode, a counter electrode on the second surface, and a charge detection circuit connected to the pixel electrode; a voltage supply circuit; a first switch switching between electrical connection and disconnection; a first capacitor having one end connected to the auxiliary electrode and the other end held to a predetermined voltage; and a first control circuit connected to the first switch, the first control circuit causing the first switch to switch between electrical connection and disconnection. The voltage supply circuit is connected, through the first switch, to the auxiliary electrode of the first pixel cell and to the one end of the first capacitor.

Abstract: An imaging device includes: first and second pixel cells each including a photoelectric converter and a transistor electrically connected to the photoelectric converter, the transistor having a control terminal; a first buffer circuit having a first input terminal and a first output terminal, the first buffer circuit receiving a signal for controlling the transistor of the first pixel cell; a second buffer circuit having a second input terminal and a second output terminal, the second buffer circuit receiving a signal for controlling the transistor of the second pixel cell; a first control signal line connecting the first output terminal to the control terminal of the first pixel cell; and a second control signal line connecting the second output terminal to the control terminal of the second pixel cell. The first control signal line and the second control signal line are connected to each other.