Abstract: A chemical mechanical polishing apparatus has a movable platen, a drive mechanism and a chucking mechanism. The drive mechanism is attached to the platen, is configured to support a generally linear polishing sheet with a portion of the polishing sheet extending over the platen, and is configured to incrementally advance the polishing sheet in a linear direction relative to the platen. The chucking mechanism is configured to intermittently secure the portion of the polishing sheet to the platen.

Abstract: A chemical mechanical polishing apparatus has a rotatable platen, a polishing sheet that is wider than the substrate extending between two reels, a drive mechanism to advance the polishing sheet, and a chucking mechanism to intermittently secure the polishing sheet to the platen. The platen can have a platen base that is adaptable to receive either a circular platen top or a rectangular platen top.

Abstract: A polishing method usable in an apparatus including a rotatable member rotatable about a first axis, at least one substrate head assembly supported on said rotatable member, and at least two polishing surfaces arranged below said rotatable member at respective angular positions about said first axis is described. In one implementation, a substrate can be mounted onto a first one of said at least one substrate head assembly. The rotatable member can be rotated to a position so that the substrate overlies a selected one of the polishing surfaces. The substrate can be engaged with said selected polishing surface and relative linear movement imparted between the selected polishing surface and the first substrate head assembly, while the substrate is engaged with the selected polishing surface.

Abstract: An apparatus and associated methods for polishing semiconductor wafers and other workpieces that includes polishing surfaces located at multiple polishing stations. Multiple wafer heads, preferably at least one greater in number than the number of polishing stations, can be loaded with individual wafers. The wafer heads are suspended from a rotatable support, which provides circumferential positioning of the heads relative to the polishing surfaces, and the wafer heads move linearly with respect to the polishing surface, thus providing relative linear motion between the wafer and the polishing station. A load/unload station may be located at a position symmetric with the polishing surfaces. The rotatable support can simultaneously position one of the heads over the load/unload station while the remaining heads are located over polishing stations for wafer polishing so that loading and unloading of wafers can be performed concurrently with wafer polishing.

Abstract: Methods are provided for forming a circuit component on a workpiece substrate. The methods comprise the steps of depositing a dielectric material over the substrate; etching a pattern through the dielectric material to expose a portion of the substrate; depositing a barrier metal over the dielectric material and the exposed portion of the substrate; depositing a conductive metal over the barrier metal, the deposited conductive metal having a thickness sufficient to fill the etched pattern; planarizing the conductive metal to form a planar metal layer; and polishing the metal layer and the barrier metal in a single polishing step using an abrasive-free polish until the dielectric material surrounding the pattern is exposed.

Abstract: Generally, a method and system for lifting a web of polishing material is provided. In one embodiment, the system includes a platen that has a first lift member disposed adjacent to a first side and a second lift member disposed adjacent to a second side. The platen is adapted to support the web of polishing media that is disposed between the first and the second lift members. A method includes supporting a web of polishing media on a platen between a first lift member and a second lift member and moving at least the first lift member or the second lift member to an extended position relative the platen that places the web in a spaced-apart relation with the platen.

Abstract: A polishing article for chemical mechanical polishing. The polishing article includes a generally elongated polishing sheet with a polishing surface. The polishing article is formed from a material that is substantially opaque, and has a discrete region extending substantially the length of the polishing sheet that is at least semi-transparent.

Abstract: An article of manufacture, method, and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article having a body comprising at least a portion of fibers coated with a conductive material, conductive fillers, or combinations thereof, and adapted to polish the substrate. In another aspect, a polishing article includes a body having a surface adapted to polish the substrate and at least one conductive element embedded in the polishing surface, the conductive element comprising dielectric or conductive fibers coated with a conductive material, conductive fillers, or combinations thereof. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. A plurality of perforations and a plurality of grooves may be formed in the articles to facilitate flow of material through and around the polishing article.

Abstract: Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window.

Abstract: A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a fist distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate.

Abstract: An apparatus and associated methods for polishing semiconductor wafers and other workpieces that includes polishing surfaces located at multiple polishing stations. Multiple wafer heads, preferably at least one greater in number than the number of polishing stations, can be loaded with individual wafers. The wafer heads are suspended from a rotatable support, which provides circumferential positioning of the heads relative to the polishing surfaces, and the wafer heads move linearly with respect to the polishing surface, thus providing relative linear motion between the wafer and the polishing station. A load/unload station may be located at a position symmetric with the polishing surfaces. The rotatable support can simultaneously position one of the heads over the load/unload station while the remaining heads are located over polishing stations for wafer polishing so that loading and unloading of wafers can be performed concurrently with wafer polishing.

Abstract: In chemical mechanical polishing, a substrate is planarized with one or more fixed-abrasive polishing pads. Then the substrate is polished with a standard polishing pad to remove scratch defects created by the fixed-abrasive polishing pads.

Abstract: A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc. During the deposition, the partial enclosure and the substrate are rotated relative one another.

Abstract: A chemical mechanical polishing apparatus has a rotatable platen, a polishing sheet that is wider than the substrate extending between two reels, a drive mechanism to advance the polishing sheet, and a chucking mechanism to intermittently secure the polishing sheet to the platen. The platen can have a platen base that is adaptable to receive either a circular platen top or a rectangular platen top.

Abstract: A polishing article for chemical mechanical polishing. The polishing article includes a generally elongated polishing sheet with a polishing surface. The polishing article is formed from a material that is substantially opaque, and has a discrete region extending substantially the length of the polishing sheet that is at least semi-transparent.

Abstract: A polishing article for chemical mechanical polishing. The polishing article includes a generally elongated polishing sheet with a polishing surface. The polishing article is formed from a material that is substantially opaque, and has a discrete region extending substantially the length of the polishing sheet that is at least semi-transparent.

Abstract: A method and apparatus for inspecting a semiconductor wafer provides real-time information identifying tools visited by wafers under inspection and the process parameters used at those tools, and displays this information at the wafer inspection tool. Embodiments include inspecting a wafer using an inspection tool, such as a CCD imager, generating a list of the tools visited by the wafer from data retrieved from a conventional manufacturing execution system and displaying the list at the inspection tool, along with a defect map. The user may then request that a set of process parameters and tool parameters for any of the tools identified on the list be displayed at the inspection tool. Thus, at the time that defects are discovered, the user is automatically provided with a list of the tools visited by the wafer and has easy access to the process parameters used at each of those tools.

Abstract: A system, method and medium for facilitating communication between tools in a semiconductor (e.g., wafer) processing facility. In particular, the present invention provides greater control of the overall semiconductor product output of groups of tools in terms of the quantity and/or quality of a final semiconductor product.

Abstract: A carrier head for a chemical mechanical polishing system includes a substrate sensing mechanism. The carrier head includes a base and a flexible member connected to the base to define a chamber. A lower surface of the flexible member provides a substrate receiving surface. The substrate sensing mechanism includes a sensor to measure a pressure in the chamber and generate an output signal representative thereof, and a processor configured to indicate whether the substrate is attached to the substrate receiving surface in response to the output signal.

Abstract: A series of modular apparatuses for processing substrates using a unique combinations of a substrate coating subsystem, a substrate curing subsystem and a PECVD-based capping subsystem. The individual subsystems are capable of being combined with one another for creating unique integrated substrate processing apparatuses that enable combined processing by the coating, curing and capping subsystems in an integrated and controlled environment, thus enabling the processing of substrates in an efficient manner, while minimizing the exposure of the substrates to an external environment and minimizing the condensation of vapors while the substrate is processed by the cure and capping subsystems.