Abstract: A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate.

Abstract: An article of manufacture, method, and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article having a body comprising at least a portion of fibers coated with a conductive material, conductive fillers, or combinations thereof, and adapted to polish the substrate. In another aspect, a polishing article includes a body having a surface adapted to polish the substrate and at least one conductive element embedded in the polishing surface, the conductive element comprising dielectric or conductive fibers coated with a conductive material, conductive fillers, or combinations thereof. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. A plurality of perforations and a plurality of grooves may be formed in the articles to facilitate flow of material through and around the polishing article.

Abstract: A system/method for interactively monitoring and adjusting product output from a module that includes two or more preparation tools. The output is a result of the coordinated effort of the two or more semiconductor preparation tools making up the module. The first of the tools is capable of implementing a first process on a semiconductor product and producing a first output. The second of the tools is configured to receive as input the first output from the first tool. The second tool is also capable of implementing a second process on the semiconductor product and producing a second output. A module control mechanism is capable of facilitating the exchange of information between the first tool and the second tool so that the module yields a desired semiconductor product output. Certain information can also be exchanged between the first and second tools. Other system/method embodiments for output/production control are also envisioned.

Abstract: In chemical mechanical polishing, a substrate is planarized with one or more fixed-abrasive polishing pads. Then the substrate is polished with a standard polishing pad to remove scratch defects created by the fixed-abrasive polishing pads.

Abstract: Methods, systems, and mediums of controlling a semiconductor manufacturing process are described. The method comprises the steps of measuring at least one critical dimension of at least one device being fabricated on at least one of the plurality of wafers, determining at least one process parameter value on the at least one measured dimension, and controlling at least one semiconductor manufacturing tool to process the at least one of the plurality of wafers based on the at least one parameter value. A variation in the at least one critical dimension causes undesirable variations in performance of the at least one device, and at least one process condition is directed to controlling the processing performed on the plurality of wafers. The at least one manufacturing tool includes at least one of an implanter tool and an annealing tool.

Abstract: A polishing article for chemical mechanical polishing. The polishing article includes a generally elongated polishing sheet with a polishing surface. The polishing article is formed from a material that is substantially opaque, and has a discrete region extending substantially the length of the polishing sheet that is at least semi-transparent.

Abstract: Generally, a method and system for lifting a web of polishing material is provided. In one embodiment, the system includes a platen that has a first lift member disposed adjacent to a first side and a second lift member disposed adjacent to a second side. The platen is adapted to support the web of polishing media that is disposed between the first and the second lift members. A method includes supporting a web of polishing media on a platen between a first lift member and a second lift member and moving at least the first lift member or the second lift member to an extended position relative the platen that places the web in a spaced-apart relation with the platen.

Abstract: A carrier head for a chemical mechanical polishing system includes a substrate sensing mechanism. The carrier head includes a base and a flexible member connected to the base to define a chamber. A lower surface of the flexible member provides a substrate receiving surface. The substrate sensing mechanism includes a sensor to measure a pressure in the chamber and generate an output signal representative thereof, and a processor configured to indicate whether the substrate is attached to the substrate receiving surface in response to the output signal.

Abstract: A substrate polishing scheme (apparatus and method) is described according to which a polishing surface of a polishing sheet is driven in a generally linear direction by a drive mechanism, a surface of a substrate is held against the polishing surface of the polishing sheet by a polishing head, and the substrate is probed through the polishing sheet by a monitoring system.

Abstract: In chemical mechanical polishing, a substrate is planarized with one or more fixed-abrasive polishing pads. Then the substrate is polished with a standard polishing pad to remove scratch defects created by the fixed-abrasive polishing pads.

Abstract: Generally, a method and system for lifting a web of polishing material is provided. In one embodiment, the system includes a platen that has a first lift member disposed adjacent to a first side and a second lift member disposed adjacent to a second side. The platen is adapted to support the web of polishing media that is disposed between the first and the second lift members. A method includes supporting a web of polishing media on a platen between a first lift member and a second lift member and moving at least the first lift member or the second lift member to an extended position relative the platen that places the web in a spaced-apart relation with the platen.

Abstract: A chemical mechanical polishing apparatus has a rotatable platen, a polishing sheet that is wider than the substrate extending between two reels, a drive mechanism to advance the polishing sheet, and a chucking mechanism to intermittently secure the polishing sheet to the platen. The platen can have a platen base that is adaptable to receive either a circular platen top or a rectangular platen top.

Abstract: A carrier head for a chemical mechanical polishing system includes a substrate sensing mechanism. The carrier head includes a base and a flexible member connected to the base to define a chamber. A lower surface of the flexible member provides a substrate receiving surface. The substrate sensing mechanism includes a sensor to measure a pressure in the chamber and generate an output signal representative thereof, and a processor configured to indicate whether the substrate is attached to the substrate receiving surface in response to the output signal.

Abstract: In chemical mechanical polishing, a substrate is planarized with one or more fixed-abrasive polishing pads. Then the substrate is polished with a standard polishing pad to remove scratch defects created by the fixed-abrasive polishing pads.

Abstract: A cleaning system for use with a micro-column array, electron beam lithography system is described. The cleaning system includes an oxidizer source and an oxidizer distribution mechanism that introduces an oxidizer into the imaging chamber of the lithography system. The oxidizer is pumped into the chamber at a flow rate and pressure that maintains a required sub-atmospheric pressure within the imaging chamber. The oxidizer acts to oxidize carbon contamination that may be present in the imaging chamber or on the surfaces of components within the chamber, such as the imaging mask. A volatile oxidized carbon gas is produced by the oxidization of the carbon contaminants. The oxidized carbon gas is pumped out of the imaging chamber to thereby remove the carbon contamination from the chamber.

Abstract: A cleaning system for use with a charged particle beam lithography system is described. The cleaning system includes an oxidizer source and an oxidizer distribution mechanism that introduces an oxidizer into the imaging chamber of the lithography system. The oxidizer is pumped into the chamber at a flow rate and pressure that maintains a required sub-atmospheric pressure within the imaging chamber. The oxidizer acts to oxidize carbon contamination that may be present in the imaging chamber or on the surfaces of components within the chamber, such as the imaging mask. A volatile oxidized carbon gas is produced by the oxidization of the carbon contaminants. The oxidized carbon gas is pumped out of the imaging chamber to thereby remove the carbon contamination from the chamber.

Abstract: A chemical mechanical polishing apparatus has a rotatable platen, a generally linear polishing sheet having an exposed portion extending over a top surface of the platen for polishing the substrate, and a drive mechanism to incrementally advance the polishing sheet in a linear direction across a top surface of the platen. The polishing sheet is releasably secured to the platen to rotate with the platen, and it has a width greater than a diameter of the substrate.

Abstract: The present invention provides a method and apparatus for measuring the reflectivity of a substrate surface in situ. A transmitting assembly includes a light source positioned externally to a vacuum chamber and proximate an opening to transmit an optical beam into the vacuum chamber. An optical beam supplied by the light source is transmitted into the chamber via one or more optical devices such as fiber optics cables, lens and the like. Reflected portions of the optical beam are collected by a receiving assembly. A signal processing system coupled to the receiving assembly is programmed to determine the reflectivity of a substrate disposed in the vacuum chamber.

Abstract: A carrier head for a chemical mechanical polishing system includes a substrate sensing mechanism. The carrier head includes a base and a flexible member connected to the base to define a chamber. A lower surface of the flexible member provides a substrate receiving surface. The substrate sensing mechanism includes a sensor to measure a pressure in the chamber and generate an output signal representative thereof, and a processor configured to indicate whether the substrate is attached to the substrate receiving surface in response to the output signal.

Abstract: A fabrication tool integrates one or more electrodeposition stations with a CMP apparatus. The tool may transport substrates from the electroplating stations to the CMP apparatus without an intervening cleaning step. In addition, the thickness of an electrodeposited layer may be measured at a metrology station prior to polishing utilizing an instrument which physically contacts the surface of the substrate, and the measured thickness may be used to adjust the polishing parameters. Furthermore, the fabrication tool may have a single interface in which a dry and clean wafer is returned to the interface.