Abstract: There is provided a drug which exhibits preventive and therapeutic effects on virus infectious diseases by inhibiting virus-derived protease on the basis of various physiological activity actions of an active sulfur compound(s) which exists in living organisms.

Abstract: A linear head module includes a plurality of linear units each having an output member, and a housing. The linear unit has a mover and a stator. The stator has an output-side bearing holder and a counter-output-side bearing holder. The housing has: a main body portion integrally including an output-side surface portion, a counter-output-side surface portion, and a coupling portion that couples the output-side surface portion and the counter-output-side surface portion; a flange facing the output-side surface portion; and a bracket facing the counter-output-side surface portion.

Abstract: A linear head module includes: a plurality of linear motors each including a mover having an output shaft portion; a plurality of detection portions each configured to detect a position of the respective output shaft portion in a direction of a thrust axis; a single circuit board provided with the plurality of detection portions; and a detected portion provided to the respective mover, the detected portion is fixed to the mover via a mounting base, and as viewed in the direction of the thrust axis, a direction in which the mounting base extends from the output shaft portion is different from a direction in which the output shaft portion and the circuit board face each other.

Abstract: A linear head module includes: a plurality of linear motors each including a mover having an output shaft portion; a plurality of detection portions each configured to detect a position of the respective output shaft portion in a direction of a thrust axis; a single circuit board provided with the plurality of detection portions; and a detected portion provided to the respective mover, the detected portion is fixed to the mover via a mounting base, and as viewed in the direction of the thrust axis, a direction in which the mounting base extends from the output shaft portion is different from a direction in which the output shaft portion and the circuit board face each other.

Abstract: A linear motor includes: a mover including an output shaft portion extending in a direction of a thrust axis; a detection portion configured to be capable of detecting a position of the output shaft portion in the direction of the thrust axis; and a detected portion fixed to the mover, the mover further includes: a mounting base to which the detected portion is attached; and a metal fastening member that fastens the mounting base to an end surface, on one side in the direction of the thrust axis, of the output shaft portion, and the mounting base includes: a metal fastened portion sandwiched between the end surface, on the one side in the direction of the thrust axis, of the output shaft portion, and the fastening member; and a resin mounting portion having a mounting surface to which the detected portion is attached, the mounting surface being provided at a position off the thrust axis.

Abstract: A linear head module includes a plurality of linear units each having an output member, and a housing. The linear unit has a mover and a stator. The stator has an output-side bearing holder and a counter-output-side bearing holder. The housing has: a main body portion integrally including an output-side surface portion, a counter-output-side surface portion, and a coupling portion that couples the output-side surface portion and the counter-output-side surface portion; a flange facing the output-side surface portion; and a bracket facing the counter-output-side surface portion.

Abstract: A self-cooled reactor apparatus includes: a pair of frames attached to a vehicular mount, a coil disposed between the pair of frames and fixed to the frames, a cover disposed between the pair of frames, and a protective member. The coil is covered by the cover having at least a portion thereof in which through-holes are formed. The protective member, while retaining a flow passage for air from the through-holes to the coil, blocks a space between the through-hole and the coil in a penetration direction of the through-holes.

Abstract: According to an embodiment, a resistance change memory includes a semiconductor substrate, a transistor having a control terminal, a first terminal and a second terminal, the transistor provided on the semiconductor substrate, an insulating layer covering the transistor, a first conductive line connected to the first terminal and provided on the insulating layer, a second conductive line provided on the insulating layer, and a resistance change element connected between the second terminal and the second conductive line. The first conductive line has a width greater than a width of the second conductive line in a direction in which the first and second conductive lines are arranged.

Abstract: A self-cooled reactor apparatus includes: a pair of frames attached to a vehicular mount, a coil disposed between the pair of frames and fixed to the frames, a cover disposed between the pair of frames, and a protective member. The coil is covered by the cover having at least a portion thereof in which through-holes are formed. The protective member, while retaining a flow passage for air from the through-holes to the coil, blocks a space between the through-hole and the coil in a penetration direction of the through-holes.

Abstract: According to an embodiment, a resistance change memory includes a semiconductor substrate, a transistor having a control terminal, a first terminal and a second terminal, the transistor provided on the semiconductor substrate, an insulating layer covering the transistor, a first conductive line connected to the first terminal and provided on the insulating layer, a second conductive line provided on the insulating layer, and a resistance change element connected between the second terminal and the second conductive line. The first conductive line has a width greater than a width of the second conductive line in a direction in which the first and second conductive lines are arranged.

Abstract: According to one embodiment, there is provided a magnetoresistive memory device. The memory device includes active areas arranged on a semiconductor substrate, resistance change elements arrayed to matrix in an X direction and a Y direction above the substrate, and selective transistors provided to correspond to the respective resistance change elements. A plurality of gate electrodes of the selective transistors are spaced apart at regular intervals in the X direction and arranged along the Y direction. Each of the active areas is provided to cross two of the gate electrodes adjacent to each other, such as to be along the X direction at a portion crossing the gate electrodes, and formed to be inclined with respect to the X direction between the adjacent gate electrodes.

Abstract: According to one embodiment, a semiconductor memory device includes a memory cell, a bit line connected to the memory cell, a sense circuit which senses data of the memory cell based on second current that flows through the memory cell and first current, a first transistor of a first conductivity type, which is connected to the bit line and through which the second current flows, and a second transistor of the first conductivity type, through which the first current flows.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate having a trench and including an active area including a channel area formed along an inner surface of the trench and source/drain areas formed at both ends of the channel area and sandwiching the trench, a gate insulating film formed on the inner surface of the trench, and a gate electrode formed in the trench in which the gate insulating film is provided. A main surface of the semiconductor substrate has {100} plane orientation, a portion of the channel area parallel to a side surface of the trench has {110} channel plane orientation and has <100> channel orientation in a channel length direction, and tensile stress in the channel length direction and compressive stress in a channel width direction are applied to the portion of the channel area parallel to the side surface of the trench.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate with a groove for forming an embedded gate therein, and a gate electrode embedded via a gate insulator film in the groove. A portion of the semiconductor substrate near the gate electrode is doped with a chemical element which is inactive in the semiconductor substrate.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate having a trench and including an active area including a channel area formed along an inner surface of the trench and source/drain areas formed at both ends of the channel area and sandwiching the trench, a gate insulating film formed on the inner surface of the trench, and a gate electrode formed in the trench in which the gate insulating film is provided. A main surface of the semiconductor substrate has {100} plane orientation, a portion of the channel area parallel to a side surface of the trench has {110} channel plane orientation and has <100> channel orientation in a channel length direction, and tensile stress in the channel length direction and compressive stress in a channel width direction are applied to the portion of the channel area parallel to the side surface of the trench.

Abstract: According to one embodiment, there is provided a magnetoresistive memory device. The memory device includes active areas arranged on a semiconductor substrate, resistance change elements arrayed to matrix in an X direction and a Y direction above the substrate, and selective transistors provided to correspond to the respective resistance change elements. A plurality of gate electrodes of the selective transistors are spaced apart at regular intervals in the X direction and arranged along the Y direction. Each of the active areas is provided to cross two of the gate electrodes adjacent to each other, such as to be along the X direction at a portion crossing the gate electrodes, and formed to be inclined with respect to the X direction between the adjacent gate electrodes.

Abstract: According to one embodiment, there is provided a semiconductor device, including a semiconductor substrate, a first semiconductor layer formed on a main surface of the semiconductor substrate, the first semiconductor layer containing carbon, a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having impurities diffused, a groove part arranged so as to pass through the second semiconductor layer, and a gate electrode embedded in the groove part via a gate insulating film.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate with a groove for forming an embedded gate therein, and a gate electrode embedded via a gate insulator film in the groove. A portion of the semiconductor substrate near the gate electrode is doped with a chemical element which is inactive in the semiconductor substrate.

Abstract: According to one embodiment, a semiconductor device that has a rectification element includes a semiconductor substrate, a first well region of a first conductivity type formed on the semiconductor substrate, a second well region of a second conductivity type formed on the semiconductor substrate, and a plurality of fins arranged over the first well region and the second well region at a first pitch in the same direction. In the semiconductor device, the rectification element includes a cathode region, an anode region, a well contact region, and a trigger region that are configured using fins. These regions are connected to each wiring portion to form a PNP-type bipolar transistor and an NPN-type bipolar transistor.

Abstract: According to one embodiments, a transparent reference electrode is provided to be sandwiched between a red-detecting photoelectric conversion film and a green-detecting photoelectric conversion film, a first transparent driving electrode is provided to face the transparent reference electrode with the green-detecting photoelectric conversion film therebetween, a second transparent driving electrode is provided to face the transparent reference electrode with the red-detecting photoelectric conversion film therebetween, and a blue-detecting photoelectric conversion film is provided below the red-detecting photoelectric conversion film and performs blue detection.