Abstract: An electromagnetic relay includes an electromagnet, an armature configured to shift in response to a magnetic force generated by the electromagnet, a movable spring having a movable contact disposed thereon, a fixed spring including a first contact strip and a second contact strip, the first contact strip having a first fixed contact disposed thereon, the second contact strip having a second fixed contact disposed thereon, the first fixed contact and the second fixed contact facing the movable contact, and a linkage member configured to link the armature and the movable spring to shift the movable spring in conjunction with movement of the armature.

Abstract: A hydraulic mechanism is mounted on a forklift. The hydraulic mechanism has a control valve and a pressure compensation circuit for compensating pressure within the hydraulic mechanism. The pressure compensation circuit has a relief pressure valve and an unloading valve for releasing pressure within the pressure compensation circuit to a discharge oil passage. Upon instructed to perform cargo handling operation, the unloading valve is switched to an open state, and the relief pressure valve is thereby actuated, so that rapid increase of pressure within the circuit is avoided. Further, the unloading valve is switched to an open state, and the pressure within the hydraulic mechanism is thereby released to the discharge oil passage, so that the cargo handling operation by the tilt cylinder and the lift cylinder is restricted.

Abstract: Disclosed is a substrate processing apparatus capable of improving the characteristic of a film formed on the surface of a wafer, using a single-wafer type substrate processing apparatus which heats and processes a wafer. The substrate processing apparatus may include: a processing vessel where a substrate is processed; a substrate supporter including: a first heater configured to heat the substrate to a first temperature; and a substrate placing surface where the substrate is placed; a heated gas supply system including a second heater configured to heat an inert gas, wherein the heated gas supply system is configured to supply a heated inert gas into the processing vessel; and a controller configured to control the first heater and the second heater such that a temperature of a front surface of the substrate and a temperature of a back surface of the substrate are in a predetermined range.

Abstract: A substrate processing apparatus includes: a process chamber where a substrate is processed; a substrate support, disposed in the process chamber, where the substrate is placed; a transfer chamber disposed under the process chamber; a partition dividing the process and transfer chambers; a first heating unit disposed in the substrate support to heat the substrate and the process chamber; a second heating unit disposed in the transfer chamber to heat the transfer chamber; a process gas supply unit to supply a process gas into the process chamber; a first cleaning gas supply unit to supply a cleaning gas into the process chamber; a second cleaning gas supply unit to supply the cleaning gas into the transfer chamber; and a control unit to control the first heating unit, the second heating unit, the process gas supply unit, the first cleaning gas supply unit and the second cleaning gas supply unit.

Abstract: An information processing device includes a first input interface to receive data transferred in a first transfer mode in which a plurality of elements of the data each belonging to a same line of a plurality of lines are transferred in parallel, a second input interface to receive data transferred in a second transfer mode in which a plurality of elements of the data each belonging to a corresponding one of the plurality of lines are transferred in parallel, a mode selection circuit to change a transfer mode of the data from the second input interface from the second transfer mode to the first transfer mode based on a signal indicating selection of the second input interface, and an output interface to output one of the data from the first input interface and the data from the second input interface.

Abstract: An electromagnetic relay includes an electromagnet unit, a contact unit including a movable contact spring with a movable contact provided thereon and a fixed contact spring with a fixed contact provided thereon, and a base block configured to support the electromagnet unit and the contact unit, wherein the electromagnet unit is supported at a first face of the base block, and the contact unit is supported at a second face of the base block facing in an opposite direction from the first face, and wherein the base block includes a first insulating wall extending from the first face alongside the electromagnet unit and a second insulating wall extending from the second face alongside the contact unit, the second insulating wall being situated on an opposite side from the first insulating wall across the second face.

Abstract: A method of manufacturing a semiconductor device includes forming a first insulating film as a portion of a laminated insulating film on a substrate in which a plurality of circuit configurations is formed; polishing the first insulating film; measuring a film thickness distribution of the first insulating film; and forming a second insulating film as a portion of the laminated insulating film on the polished first insulating film at a film thickness distribution differing from the film thickness distribution of the first insulating film to correct a film thickness of the laminated insulating film.

Abstract: Disclosed is a photocatalyst member including a glaze layer and a photocatalyst layer provided on the glaze layer, the photocatalyst layer is good in layer strength, water resistance, or abrasion resistance. More specifically, the photocatalyst member includes a base having a glaze layer and a photocatalyst layer that is provided on the glaze layer and contains titanium oxide and zirconium titanate, wherein the content of zirconium titanate in the photocatalyst layer is 15 to 75% by mass based on the total content of titanium oxide and zirconium titanate, and the content of zirconium titanate in an area from around an interface between the photocatalyst layer and the base to an median line in the thickness of the photocatalyst layer is larger than the content of zirconium titanate in an area near the external surface of the photocatalyst layer.

Abstract: When an engine stall is likely to occur, the pressure of the back pressure chamber of a relief pressure valve is released to adjust the relief pressure of the relief pressure valve. This actuates a pressure compensating circuit to release the pressure in a control circuit to an oil tank. Thus, a rapid increase of the pressure due to a cargo handling operation is restricted, and an engine stall due to insufficient torque of the engine is avoided.

Abstract: A substrate processing apparatus includes a reception part configured to receive film thickness distribution data of a substrate on which a channel region, an insulating film on the channel region, and a first silicon-containing layer as a portion of a silicon-containing film on the insulating film are formed; a substrate mounting part configured to mount the substrate; and a gas supply part configured to supply a gas to form a second silicon-containing layer as a portion of the silicon-containing film on the first silicon-containing layer to have a film thickness distribution different from a film thickness distribution of the film thickness distribution data, thereby correcting a film thickness of the silicon-containing film.

Abstract: A substrate processing apparatus includes a robot having: an end effector, a first link structure including a fixing portion having a front end to which the end effector is fixed, a support portion, and a first hole formed in the support portion, a second link structure including a second hole, and a shaft inserted into the first and second holes, the shaft including an upper end having a height equal to or smaller than a height of the substrate mounted on the end effector; a vacuum transfer chamber, wherein the robot is installed in the vacuum transfer chamber; at least one process chamber disposed adjacent to the vacuum transfer chamber and configured to thermally process the substrate transferred from the vacuum transfer chamber by the robot; a module including one or more process chambers; and a cooling mechanism installed above the first link structure or the shaft.

Abstract: Disclosed is a sanitary ware having a photocatalyst layer which has excellent durability even in an environment where the photocatalyst layer is exposed to an acid and an alkali alternately. The sanitary ware comprises a glaze layer, an intermediate layer provided on the glaze layer, and a photocatalyst layer provided on the intermediate layer, wherein the photocatalyst layer comprises titanium oxide in the amount of 95 mass % to 75 mass % and zirconium oxide in the amount of 5 mass % to 25 mass % and the intermediate layer comprises silica in the amount of 98 mass % to 85 mass %, and titanium oxide and/or zirconium oxide in the amount of 2 mass % to 15 mass %.

Abstract: A substrate processing apparatus includes a robot having: an end effector, a first link structure including a fixing portion having a front end to which the end effector is fixed, a support portion, and a first hole formed in the support portion, a second link structure including a second hole, and a shaft inserted into the first and second holes, the shaft including an upper end having a height equal to or smaller than a height of the substrate mounted on the end effector; a vacuum transfer chamber, wherein the robot is installed in the vacuum transfer chamber; at least one process chamber disposed adjacent to the vacuum transfer chamber and configured to thermally process the substrate transferred from the vacuum transfer chamber by the robot; a module including one or more process chambers; and a cooling mechanism installed above the first link structure or the shaft.

Abstract: An information processing apparatus includes a first bus interface to receive first data transferred in a pixel-parallel transfer mode, a second bus interface to receive second data transferred in a line-parallel transfer mode, a selector to select one of the first data transferred in the pixel-parallel transfer mode and the second data transferred in the line-parallel transfer mode, as input data, a transfer switching circuit to switch between the line-parallel transfer mode and the pixel-parallel transfer mode to process the input data according to the switched transfer mode.

Abstract: Deviation in properties of a semiconductor is suppressed. Provided is a configuration including a receiving member configured to receive data representing a film thickness distribution of a silicon-containing film formed on a substrate, a substrate support where the substrate is placed, a gas supply member configured to supply gases in a manner that a hard mask film having a film thickness distribution different from that of the silicon-containing film is formed on the silicon-containing film to maintain a height of an upper surface of the hard mask film in a predetermined range.

Abstract: A technique capable of suppressing a variation in a characteristic of a semiconductor device includes: (a) polishing a substrate including: a first insulating film having a first groove; and a first metal film formed in the first groove and on the first insulating film; (b) forming a second insulating film on the substrate after performing (a); (c) polishing the second insulating film; (d) measuring a thickness distribution of the second insulating film on the substrate after performing (c); and (e) forming a third insulating film having a thickness distribution different from that of the second insulating film measured in (d) to compensate for a thickness distribution of a stacked insulating film including the second insulating film and the third insulating film.

Abstract: A polarized electromagnetic relay including an electromagnet; a pair of magnetic pole pieces driven by the electromagnet; a permanent magnet attached to the magnetic pole pieces; a contact section including a first fixed contact member with a normally open fixed contact, a first movable contact member with a normally open movable contact, a second fixed contact member with a normally closed fixed contact, and a second movable contact member with a normally closed movable contact; and a transmission member to which the magnetic pole pieces is attached. In accordance with a rectilinear movement of the magnetic pole pieces in parallel to a coil center axis, the transmission member rectilinearly moves in parallel to the center axis and thereby causes the normally open and closed movable contacts to perform an opening or closing operation in a mutually interlocked manner.

Abstract: A method of manufacturing a semiconductor device includes forming a first insulating film as a portion of a laminated insulating film on a substrate in which a plurality of circuit configurations is formed; polishing the first insulating film; measuring a film thickness distribution of the first insulating film; and forming a second insulating film as a portion of the laminated insulating film on the polished first insulating film at a film thickness distribution differing from the film thickness distribution of the first insulating film to correct a film thickness of the laminated insulating film.

Abstract: A substrate processing apparatus includes a reception part configured to receive film thickness distribution data of a substrate on which a channel region, an insulating film on the channel region, and a first silicon-containing layer as a portion of a silicon-containing film on the insulating film are formed; a substrate mounting part configured to mount the substrate; and a gas supply part configured to supply a gas to form a second silicon-containing layer as a portion of the silicon-containing film on the first silicon-containing layer to have a film thickness distribution different from a film thickness distribution of the film thickness distribution data, thereby correcting a film thickness of the silicon-containing film.

Abstract: Provided is a nozzle mounting structure of a component container by which a nozzle configured to rotate between a first position and a second position may be mounted to a housing without the need for a high processing precision and a high assembly precision. A pair of shaft portions support a body with the nozzle unitarily formed therewith. The nozzle rotates between the first position and the second position. A curved convex surface provided on the body is pressed against a curved concave surface provided on a first bottom wall portion of a housing by a pressing force imparted from a support portion.