Abstract: A roll-on liquid applicator having an applicator ball disposed within a dispensing chamber and a spring element with a valve head portion. The spring element effects a distally-directed force to press the valve head against the valve opening to maintain a sealing closure of the valve opening against flow of the liquid from the feed chamber into the dispensing chamber. The valve head has a ball support structure which extends distally through the valve opening to contact with the applicator ball so that when the ball is inwardly displaced by force applied thereto, the valve head moves axially inward from the closed-valve position to the open-valve position, thereby moving the valve head from the closed-valve position in contact with the valve opening toward the open-valve position which allows liquid from the feed chamber to enter the dispensing chamber.

Abstract: A roll-on liquid applicator having an applicator ball disposed within a dispensing chamber and a spring element with a valve head portion. The spring element effects a distally-directed force to press the valve head against the valve opening to maintain a sealing closure of the valve opening against flow of the liquid from the feed chamber into the dispensing chamber. The valve head has a ball support structure which extends distally through the valve opening to contact with the applicator ball so that when the ball is inwardly displaced by force applied thereto, the valve head moves axially inward from the closed-valve position to the open-valve position, thereby moving the valve head from the closed-valve position in contact with the valve opening toward the open-valve position which allows liquid from the feed chamber to enter the dispensing chamber.

Abstract: A multipurpose infant positioning device that includes a lower pad with front and back surfaces, wings attached to lateral sides of the lower pad and a bottom flap attached to the bottom portion of the lower pad. At least one of the wings and bottom flap have fastening segments attached thereto for adjustably attaching these components to portions of the lower pad. The fastened wing and bottom flap are made of a material having sufficient resiliency to maintain and bring an infant back to flexed midline position within the infant positioning device. These infant positioning devices may further include a headpiece, brim, pocket at the back surface of the lower pad and a detachable readjustable multipurpose pillow for positioning the infant from and between supine, prone and side-lying positions, all while maintaining and reinforcing the flexed midline position of the infant for normal development.

Abstract: Disclosed herein is a semiconductor device including a first dielectric disposed over a channel region of a transistor formed in a substrate and a gate disposed over the first dielectric. The semiconductor device further includes a second dielectric disposed vertically, substantially perpendicular to the substrate, at an edge of the gate, and a spacer disposed proximate to the second dielectric. The spacer includes a cross-section with a perimeter that includes a top curved portion and a vertical portion that is substantially perpendicular to the substrate. Further, disclosed herein, are methods associated with the fabrication of the aforementioned semiconductor device.

Abstract: A suck-back valve selectively actuatable for dispensing liquid in its open condition from an associated liquid storage container, and for avoiding continued presence of excess dispensed liquid about the exit orifice in the closed condition of the valve, is formed at least in part of a spring member and a pin. The spring member includes a distal web that defines a valve seat and a dispensed liquid exit orifice, a proximal web, and a plurality of flexibly elastic bands helically connecting the distal and proximal webs. The pin includes an elongated shaft having a proximal end secured to the proximal web and carrying a substantially hollow frustoconical cone at its distal end. The cone has an outer valving surface for releasable abutment with the valve seat and the shaft has a bore of predetermined cross-sectional extent defined longitudinally along and within the shaft to create a continuous fluid passageway through and along the pin.

Abstract: A suck-back valve selectively actuatable for dispensing liquid in its open condition from an associated liquid storage container, and for avoiding continued presence of excess dispensed liquid about the exit orifice in the closed condition of the valve, is formed at least in part of a spring member and a pin. The spring member includes a distal web that defines a valve seat and a dispensed liquid exit orifice, a proximal web, and a plurality of flexibly elastic bands helically connecting the distal and proximal webs. The pin includes an elongated shaft having a proximal end secured to the proximal web and carrying a substantially hollow frustoconical cone at its distal end. The cone has an outer valving surface for releasable abutment with the valve seat and the shaft has a bore of predetermined cross-sectional extent defined longitudinally along and within the shaft to create a continuous fluid passageway through and along the pin.

Abstract: A semiconductor device having a substrate, a dielectric layer over the substrate, a first gate conductor, an inter-gate dielectric structure and a second gate conductor is disclosed. A gate dielectric structure is disposed between the first gate conductor and the dielectric layer, and may include two or more dielectric films disposed in an alternating manner. The inter-gate dielectric structure may be disposed between the first gate conductor and the second gate conductor, and may include two or more dielectric films disposed in an alternating manner. The second gate conductor is formed in an L shape such that the second gate has a relatively low aspect ratio, which allows for a reduction it spacing between adjacent gates, while maintaining the required electrical isolation between the gates and contacts that may subsequently be formed.

Abstract: Methods and apparatus for manufacturing semiconductor devices, and such semiconductor devices, are described. According to various aspects of the disclosure, a semiconductor device comprises a first region, a second region, a first polysilicon region, and a second polysilicon region. The first polysilicon region is formed over the first and second regions of the semiconductor device. Portions of the first and polysilicon layers that are uncovered by either of a first mask and a second mask are removed. The first mask is formed on the first polysilicon layer and the second mask is formed on the second polysilicon layer in the first region and not on in the second region.

Abstract: A suck-back valve selectively actuatable for dispensing liquid in its open condition from an associated liquid storage container, and for avoiding continued presence of excess dispensed liquid about the exit orifice in the closed condition of the valve, is formed at least in part of a spring member and a pin. The spring member includes a distal web that defines a valve seat and a dispensed liquid exit orifice, a proximal web, and a plurality of flexibly elastic bands helically connecting the distal and proximal webs. The pin includes an elongated shaft having a proximal end secured to the proximal web and carrying a substantially hollow frustoconical cone at its distal end. The cone has an outer valving surface for releasable abutment with the valve seat and the shaft has a bore of predetermined cross-sectional extent defined longitudinally along and within the shaft to create a continuous fluid passageway through and along the pin.

Abstract: A semiconductor device having a substrate, a dielectric layer over the substrate, a first gate conductor, an inter-gate dielectric structure and a second gate conductor is disclosed. A gate dielectric structure is disposed between the first gate conductor and the dielectric layer, and may include two or more dielectric films disposed in an alternating manner. The inter-gate dielectric structure may be disposed between the first gate conductor and the second gate conductor, and may include two or more dielectric films disposed in an alternating manner. The second gate conductor is formed in an L shape such that the second gate has a relatively low aspect ratio, which allows for a reduction in spacing between adjacent gates, while maintaining the required electrical isolation between the gates and contacts that may subsequently be formed.

Abstract: A method of forming a vertical non-volatile (NV) memory device such as 3-D NAND flash memory includes forming a vertical NV memory cell string within an opening disposed in a stack of alternating layers of a first layer and a second layer over a substrate, and dividing the vertical NV memory cell string into two halves with a first vertical deep trench and an isolation dielectric pillar formed in the first vertical deep trench, such that memory bit density of the divided vertical NV memory cell strings double the memory bits of the device.

Abstract: Disclosed herein is a semiconductor device comprising a first dielectric disposed over a channel region of a transistor formed in a substrate and a gate disposed over the first dielectric. The semiconductor device further includes a second dielectric disposed vertically, substantially perpendicular to the substrate, at an edge of the gate, and a spacer disposed proximate to the second dielectric. The spacer includes across-section with a perimeter that includes atop curved portion and a vertical portion substantially perpendicular to the substrate. The perimeter further includes a discontinuity at an interface of the top curved portion with the vertical portion. Further, disclosed herein are methods associated with the fabrication of the aforementioned semiconductor device.

Abstract: A multipurpose infant positioning device that includes a lower pad with front and back surfaces, wings attached to lateral sides of the lower pad and a bottom flap attached to the bottom portion of the lower pad. At least one of the wings and bottom flap have fastening segments attached thereto for adjustably attaching these components to portions of the lower pad. The fastened wing and bottom flap are made of a material having sufficient resiliency to maintain and bring an infant back to flexed midline position within the infant positioning device. These infant positioning devices may further include a headpiece, brim, pocket at the back surface of the lower pad and a detachable readjustable multipurpose pillow for positioning the infant from and between supine, prone and side-lying positions, all while maintaining and reinforcing the flexed midline position of the infant for normal development.

Abstract: Methods and apparatus for manufacturing semiconductor devices, and such semiconductor devices, are described. According to various aspects of the disclosure, a semiconductor device comprises a first region, a second region, a first polysilicon region, and a second polysilicon region. The first polysilicon region is formed over the first and second regions of the semiconductor device. Portions of the first and polysilicon layers that are uncovered by either of a first mask and a second mask are removed. The first mask is formed on the first polysilicon layer and the second mask is formed on the second polysilicon layer in the first region and not on in the second region.

Abstract: Disclosed herein is a semiconductor device comprising a first dielectric disposed over a channel region of a transistor formed in a substrate and a gate disposed over the first dielectric. The semiconductor device further includes a second dielectric disposed vertically, substantially perpendicular to the substrate, at an edge of the gate, and a spacer disposed proximate to the second dielectric. The spacer includes a cross-section with a perimeter that includes a top curved portion and a vertical portion substantially perpendicular to the substrate. The perimeter further includes a discontinuity at an interface of the top curved portion with the vertical portion. Further, disclosed herein are methods associated with the fabrication of the aforementioned semiconductor device.

Abstract: Some embodiments of the present fixtures include a mechanical actuator configured to direct movement of a light mount along an arcuate path defined by arcuate bearing surface(s). Some embodiments of the present fixtures include a rotatable portion coupled to a stationary portion at an interface that is at least partially defined by smooth surface(s). Some embodiments of the present mounts include a base having a sidewall that defines an outer perimeter and mounting tab(s), each movable between a deployed state and a retracted state in which at least a portion of the mounting tab is disposed within the outer perimeter. Some embodiments of the present removable shroud assemblies include a lens coupled to a second end of a shroud and movable from a first position to a second position in which a portion of the lens is not in contact with the second end of the shroud.

Abstract: A multipurpose infant positioning device that includes a lower pad with front and back surfaces, wings attached to lateral sides of the lower pad and a bottom flap attached to the bottom portion of the lower pad. At least one of the wings and bottom flap have fastening segments attached thereto for adjustably attaching these components to portions of the lower pad. The fastened wing and bottom flap are made of a material having sufficient resiliency to maintain and bring an infant back to flexed midline position within the infant positioning device. These infant positioning devices may further include a headpiece, brim, pocket at the back surface of the lower pad and a detachable readjustable multipurpose pillow for positioning the infant from and between supine, prone and side-lying positions, all while maintaining and reinforcing the flexed midline position of the infant for normal development.

Abstract: Methods and apparatus for manufacturing semiconductor devices, and such semiconductor devices, are described. According to various aspects of the disclosure, a semiconductor device can be manufactured by forming a core region of the semiconductor device and forming a periphery region of the semiconductor device. A first polysilicon region can then be formed over the core and periphery regions of the semiconductor device. A first mask is formed on the first poly silicon layer and a second polysilicon layer is disposed such that the second polysilicon layer covers the first mask. A second mask can then be formed on the second polysilicon layer. After forming the second mask, portions of the first and second polysilicon layers that are uncovered by either the first or second masks are removed.

Abstract: A semiconductor device having a substrate, a dielectric layer over the substrate, a first gate conductor, an inter-gate dielectric structure and a second gate conductor is disclosed. A gate dielectric structure is disposed between the first gate conductor and the dielectric layer, and may include two or more dielectric films disposed in an alternating manner. The inter-gate dielectric structure may be disposed between the first gate conductor and the second gate conductor, and may include two or more dielectric films disposed in an alternating manner. The second gate conductor is formed in an L shape such that the second gate has a relatively low aspect ratio, which allows for a reduction in spacing between adjacent gates, while maintaining the required electrical isolation between the gates and contacts that may subsequently be formed.

Abstract: A semiconductor device having a gate stack on a substrate is disclosed. The gate stack may include a mask layer disposed over a first gate conductor layer. The first gate conductor layer may be laterally etched beneath the mask layer to create an overhanging portion of the mask layer. A sidewall dielectric can be formed on the sidewall of the first gate conductor layer beneath the overhanging portion of the mask layer. A sidewall structure layer can be formed adjacent to the sidewall dielectric and beneath the overhanging portion of the mask layer. The mask layer can be removed. The first gate conductor layer can be used to form a memory gate and the sidewall structure layer can be used to form a select gate.