Patents by Inventor Seung-nam Cha

Seung-nam Cha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140159181
    Abstract: A graphene-nanoparticle structure includes a substrate, a graphene layer disposed on the substrate and a nanoparticle layer disposed on the graphene layer. The graphene-nanoparticle structure may be formed by alternately laminating the graphene layer and the nanoparticle layer and may play the role of a multifunctional film capable of realizing various functions according to the number of laminated layers and the selected material of the nanoparticles.
    Type: Application
    Filed: December 11, 2013
    Publication date: June 12, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-min KIM, Dae-Jun KANG, Seung-nam CHA, Muhammad Imran SHAKIR, Young-jun PARK
  • Patent number: 8749735
    Abstract: A color filter and display devices using the same are provided, the color filter includes a first electrode and a second electrode spaced apart from each other; and a variable filter layer between the first electrode and the second electrode. The variable filter layer includes a polymer, liquid crystal dispersed in the polymer, and a plurality of color display materials mixed in the liquid crystal.
    Type: Grant
    Filed: December 7, 2010
    Date of Patent: June 10, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-eun Jang, Seung-nam Cha, Jae-eun Jung, Yong-wan Jin
  • Publication number: 20140138672
    Abstract: A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.
    Type: Application
    Filed: April 9, 2013
    Publication date: May 22, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-jun PARK, Jung-inn SOHN, Seung-nam CHA, Ji-yeon KU
  • Patent number: 8691012
    Abstract: A method of manufacturing zinc oxide nanowires. A metal seed layer is formed on a substrate. The metal seed layer is thermally oxidized to form metal oxide crystals. Zinc oxide nanowires are grown on the metal oxide crystals serving as seeds for growth. The zinc oxide nanowires are aligned in one direction with respect to the surface of the substrate.
    Type: Grant
    Filed: September 24, 2008
    Date of Patent: April 8, 2014
    Assignee: Samsung Electronics Co. Ltd.
    Inventors: Seung Nam Cha, Jae Eun Jang, Byong Gwon Song
  • Patent number: 8680514
    Abstract: An electric energy generator may include a semiconductor layer and a plurality of nanowires having piezoelectric characteristics. The electric energy generator may convert optical energy into electric energy if external light is applied and may generate piezoelectric energy if external pressure (e.g., sound or vibration) is applied.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: March 25, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-jun Park, Seung-nam Cha
  • Patent number: 8675167
    Abstract: A polymer dispersed display apparatus includes a polymer layer, and a plurality of liquid crystal drops dispersed in the polymer layer. Quantum dots emitting a plurality of colors of light are mixed in the liquid crystal drops. Therefore, the polymer dispersed display apparatus displays colors without the need for a color filter. Thus, the polymer dispersed display apparatus need not include a polarization plate and a color filter, so that a light usage efficiency of the polymer dispersed display apparatus increases.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: March 18, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-eun Jang, Seung-nam Cha, Jae-eun Jung, Yong-wan Jin
  • Patent number: 8614394
    Abstract: Disclosed are p-n zinc (Zn) oxide nanowires and a methods of manufacturing the same. A p-n Zn oxide nanowire includes a p-n junction structure in which phosphorus (P) is on a surface of a Zn oxide nanowire.
    Type: Grant
    Filed: January 13, 2010
    Date of Patent: December 24, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-nam Cha, Byong-gwon Song, Jae-eun Jang
  • Patent number: 8536578
    Abstract: A thin film transistor includes nanowires. More specifically, the thin film transistor includes nanowires aligned between and extending to opposite facing lateral surfaces of source/drain electrodes on a substrate. The nanowires extend in a direction parallel to a major surface defining the substrate to form a semiconductor channel layer. Also disclosed herein is a method for fabricating the thin film transistor.
    Type: Grant
    Filed: October 1, 2008
    Date of Patent: September 17, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung Nam Cha, Byong Gwon Song, Jae Eun Jang
  • Publication number: 20130175901
    Abstract: A nanopiezoelectric generator is provided. The nanopiezoelectric generator includes a first electrode; a second electrode; at least one nanostructure that is interposed between the first electrode and the second electrode, and includes a piezoelectric material and first carriers; and a concentration adjusting unit that adjusts a concentration of the first carriers in the at least one nanostructure.
    Type: Application
    Filed: July 30, 2012
    Publication date: July 11, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-nam CHA, Sung-min KIM, Jung-inn SOHN
  • Patent number: 8421062
    Abstract: A nanofiber composite including a nanofiber formed of a hydrophobic polymer, a nanowire formed of a conductive or semiconductive organic material that is oriented in the nanofiber in the longitudinal direction of the nanofiber, and an ionic active material.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: April 16, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-hyun Hur, Jong-jin Park, Seung-nam Cha, Jong-min Kim, Chi-yul Yoon
  • Publication number: 20130088764
    Abstract: A light position controlling apparatus and a method of manufacturing the same. The light position controlling apparatus includes a substrate; first and second electrodes that are arranged on the substrate and configured to generate an electric field; and a piezoelectric nano wire configured to operate as optical waveguide. The piezoelectric nano wire includes a first portion disposed on the substrate, and a second portion that extends from the first portion and bends according to the electric field generated by the first and second electrodes to change a travel direction of light transmitted by the piezoelectric nano wire.
    Type: Application
    Filed: July 6, 2012
    Publication date: April 11, 2013
    Applicants: GEORGIA TECH RESEARCH CORPORATION, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-nam CHA, Young-jun PARK, Zhong Lin WANG, Min-baek LEE
  • Patent number: 8410563
    Abstract: Electrical energy generation apparatuses, in which a solar battery device and a piezoelectric device are combined in a single body by using a plurality of nano wires formed of a semiconductor material having piezoelectric properties.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: April 2, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-jun Park, Seung-nam Cha
  • Patent number: 8394296
    Abstract: An electroconductive fiber, a method of manufacturing an electroconductive fiber, and a fiber complex including an electroconductive fiber are provided, the electroconductive fiber includes an electroconductive polymer, an elastic polymer that forms a structure with the electroconductive polymer, and a carboneous material on at least one of the electroconductive polymer and the elastic polymer.
    Type: Grant
    Filed: July 29, 2010
    Date of Patent: March 12, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-jin Park, Jae-hyun Hur, Jong-min Kim, Seung-nam Cha, Un-jeong Kim, Hyung-bin Son
  • Publication number: 20130038299
    Abstract: A nanogenerator with at least one nanostructure and method of manufacturing the same are provided. The method of manufacturing the nanogenerator includes forming at least one nanostructure including an organic piezoelectric material on a substrate.
    Type: Application
    Filed: March 5, 2012
    Publication date: February 14, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-inn SOHN, Seung-nam CHA, Sung-min KIM, Sang-woo KIM, Ju-seok SEO
  • Publication number: 20130038178
    Abstract: A ZnSnO3/ZnO nanowire, a method of forming a ZnSnO3/ZnO nanowire, a nanogenerator including a ZnSnO3/ZnO nanowire, a method of forming a ZnSnO3 nanowire, and a nanogenerator including a ZnSnO3 nanowire are provided. The ZnSnO3/ZnO nanowire includes a core and a shell that surrounds the core, wherein the core includes ZnSnO3 and the shell includes ZnO.
    Type: Application
    Filed: June 5, 2012
    Publication date: February 14, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-inn SOHN, Seung-Nam CHA, Sung-min KIM, Sang-woo KIM
  • Publication number: 20120319218
    Abstract: Electrical energy generation apparatuses, in which a solar battery device and a piezoelectric device are combined in a single body by using a plurality of nano wires formed of a semiconductor material having piezoelectric properties.
    Type: Application
    Filed: August 30, 2012
    Publication date: December 20, 2012
    Inventors: Young-jun PARK, Seung-nam CHA
  • Patent number: 8283739
    Abstract: Electrical energy generation apparatuses, in which a solar battery device and a piezoelectric device are combined in a single body by using a plurality of nano wires formed of a semiconductor material having piezoelectric properties.
    Type: Grant
    Filed: February 17, 2010
    Date of Patent: October 9, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-jun Park, Seung-nam Cha
  • Publication number: 20120223617
    Abstract: According to an example embodiment, an electrical energy generator includes at least one piezoelectric structure, a semiconductor layer and a contact layer. The at least one piezoelectric structure includes a material having piezoelectric characteristics. One surface of each piezoelectric structure forms a p-n junction with the semiconductor layer. The other end of each piezoelectric structure contacts the contact layer that is formed of a material having metal-insulator transition (MIT) characteristics. The piezoelectric structure may be an elongated member, such as a nanowire.
    Type: Application
    Filed: February 14, 2012
    Publication date: September 6, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-min KIM, Seung-nam CHA
  • Publication number: 20120049696
    Abstract: A piezoelectric device including an engraved nanostructure body and a method of manufacturing the same are provided. The piezoelectric device includes a matrix including a piezoelectric material, a nanopore may be disposed in the matrix, and the nanopore may be extended substantially in a predetermined direction. The method may include coating a piezoelectric material on a substrate having a nanostructure body disposed thereon, and selectively etching the nanostructure body.
    Type: Application
    Filed: February 25, 2011
    Publication date: March 1, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-Nam CHA, Byoung-Lyong CHOI, Byong-Gwon SONG
  • Publication number: 20110303912
    Abstract: Example embodiments relate to methods of manufacturing p-type Zn oxide nanowires and electronic devices including the p-type Zn oxide nanowires. The method may include forming Zn oxide nanowires in an aqueous solution by using a hydrothermal synthesis method and annealing the Zn oxide nanowires to form p-type Zn oxide nanowires.
    Type: Application
    Filed: May 13, 2011
    Publication date: December 15, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-nam Cha, Young-jun Park, Jin-pyo Hong