Abstract: Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided.

Abstract: Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided.

Abstract: Embodiments relate to a method for annealing a solar cell structure including forming an absorber layer on a molybdenum (Mo) layer of a solar cell base structure. The solar cell base structure includes a substrate and the Mo layer is located on the substrate. The absorber layer includes a semiconductor chalcogenide material. Annealing the solar cell base structure is performed by exposing an outer layer of the solar cell base structure to a plasma.

Abstract: A chalcogen-resistant material including at least one of a conductive elongated nanostructure layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide material layer is deposited over the chalcogen-resistant material. The conductive elongated nanostructures, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by blocking chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material.

Abstract: A chalcogen-resistant material including at least one of a carbon nanotube layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide/kesterite material layer is deposited over the chalcogen-resistant material. The carbon nanotubes, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by reducing chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material.

Abstract: The method utilizes a conducting trench base with non-conducting trench walls to corral charged particles precisely into the trenches. The nanoparticles are close packed in the channels and highly ordered. This approach utilizes the charge on the particles to selectively deposit them within the trenches, as all nanoparticles in solution can be charged, and this can be extended to any nanoparticle system beyond gold. Also, this method results in the layer-by-layer growth of the gold nanoparticles. Therefore the depth of the nanoparticle layers within the trenches is controllable. This allows the possibility of heterolayered structures of different nanoparticle layers. Further this method ensures that assembly occurs to fill the void space available provided the back-contacting electrode is more conducting than the trench walls. This allows nanoparticle assemblies to be corralled into any lithographically defined shape, which makes this approach highly adaptable to a range of applications.

Abstract: The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The conductive layer is partially oxidized by an oxygen plasma process to convert a portion thereof to an oxide layer thereby forming the electrode. The oxide layer is free of surface defects and the thickness of the oxide layer is from about 0.09 nm to about 10 nm and ranges therebetween, controllable with 0.2 nm precision.

Abstract: Solutions and processes for electrodepositing gallium or gallium alloys includes a plating bath free of complexing agents including a gallium salt, an indium salt, a combination thereof, and a combination of any of the preceding salts with copper, an acid, and a solvent, wherein the pH of the solution is in a range selected from the group consisting of from about zero to about 2.6 and greater than about 12.6 to about 14. An optional metalloid may be included in the solution.

Abstract: The invention relates to manufacturing a I-III-VI compound in the form of a thin film for use in photovoltaics, including the steps of: a) electrodepositing a thin-film structure, consisting of I and/or III elements, onto the surface of an electrode that forms a substrate (SUB); and b) incorporating at least one VI element into the structure so as to obtain the I-III-VI compound. According to the invention, the electrodeposition step comprises checking that the uniformity of the thickness of the thin film varies by no more than 3% over the entire surface of the substrate receiving the deposition.

Abstract: Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided.

Abstract: Accordingly, the present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A substrate which has a conductive layer disposed thereon is provided and the conductive layer has an oxide layer with an exposed surface. The exposed surface of the oxide layer contacts a solution of an organic surface active compound in an organic solvent to form a protective layer of the organic surface active compound over the oxide layer. The protective layer has a thickness of from about 0.5 nm to about 5 nm and ranges therebetween depending on a chemical structure of the surface active compound.

Abstract: Photovoltaic devices and methods for preparing a p-type semiconductor generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy.

Abstract: Solutions and processes for electrodepositing gallium or gallium alloys includes a plating bath free of complexing agents including a gallium salt, an indium salt, a combination thereof, and a combination of any of the preceding salts with copper, an acid, and a solvent, wherein the pH of the solution is in a range selected from the group consisting of from about zero to about 2.6 and greater than about 12.6 to about 14. An optional metalloid may be included in the solution.

Abstract: Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided.

Abstract: Techniques for electrodepositing selenium (Se)-containing films are provided. In one aspect, a method of preparing a Se electroplating solution is provided. The method includes the following steps. The solution is formed from a mixture of selenium oxide; an acid selected from the group consisting of alkane sulfonic acid, alkene sulfonic acid, aryl sulfonic acid, heterocyclic sulfonic acid, aromatic sulfonic acid and perchloric acid; and a solvent. A pH of the solution is then adjusted to from about 2.0 to about 3.0. The pH of the solution can be adjusted to from about 2.0 to about 3.0 by adding a base (e.g., sodium hydroxide) to the solution. A Se electroplating solution, an electroplating method and a method for fabricating a photovoltaic device are also provided.

Abstract: Techniques for electrodepositing zinc (Zn)-containing films are provided. In one aspect, a method of preparing a Zn electroplating solution is provided. The method includes the following steps. The solution is formed from a mixture of at least one zinc salt, a sulfonic acid and a solvent. The sulfonic acid is quenched with a base. A pH of the solution is adjusted to be either less than about 3.5 or greater than about 8.0. The pH of the solution can be adjusted by adding additional sulfonic acid to the solution to adjust the pH of the solution to be less than about 3.5 or by adding a second base to the solution to adjust the pH of the solution to be greater than about 8.0. A Zn electroplating solution and an electroplating method are also provided.

Abstract: Solutions and processes for electrodepositing gallium or gallium alloys includes a plating bath free of complexing agents including a gallium salt, an indium salt, a combination thereof, and a combination of any of the preceding salts with copper, an acid, and a solvent, wherein the pH of the solution is in a range selected from the group consisting of from about zero to about 2.6 and greater than about 12.6 to about 14. An optional metalloid may be included in the solution.

Abstract: Photovoltaic devices and methods for preparing a p-type semiconductor layer for the photovoltaic devices generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy with the electroplating process.

Abstract: The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The conductive layer is partially oxidized by an oxygen plasma process to convert a portion thereof to an oxide layer thereby forming the electrode. The oxide layer is free of surface defects and the thickness of the oxide layer is from about 0.09 nm to about 10 nm and ranges therebetween, controllable with 0.2 nm precision.

Abstract: The present invention provides a method of reducing corrosion and water decomposition on a surface of an electrode having a titanium nitride conductive layer disposed on a substrate and estimating extent of reduction thereof. The electrode is immersed into a solution containing a hydroxyl-functional compound. Thereafter, a voltage is applied to the titanium nitride conductive layer of the electrode. The extent of oxidation of the titanium nitride conductive layer is correlated with the extent of formation of oxide of titanium nitride and/or the extent of oxidation of the titanium nitride conductive layer is correlated with the increase of surface roughness. The extent of water decomposition is correlated with formation of hydrogen and oxygen bubbles.