Patents by Inventor Shang-Yun Hou
Shang-Yun Hou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240153861Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, a molding compound and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The at least one semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The molding compound is disposed over the interposer and laterally encapsulates the at least one semiconductor die. The molding compound laterally wraps around the interposer and the molding compound at least physically contacts a portion of the sidewalls of the interposer. The connectors are disposed on the second surface of the interposer, and are electrically connected with the at least one semiconductor die through the interposer.Type: ApplicationFiled: January 14, 2024Publication date: May 9, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chi-Ming Huang, Ping-Kang Huang, Sao-Ling Chiu, Shang-Yun Hou
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Patent number: 11978714Abstract: A method includes bonding a first device die and a second device die to an interconnect die. The interconnect die includes a first portion over and bonded to the first device die, and a second portion over and bonded to the second device die. The interconnect die electrically connects the first device die to the second device die. The method further includes encapsulating the interconnect die in an encapsulating material, and forming a plurality of redistribution lines over the interconnect die.Type: GrantFiled: December 19, 2022Date of Patent: May 7, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kuo-Chiang Ting, Chi-Hsi Wu, Shang-Yun Hou, Tu-Hao Yu, Chia-Hao Hsu, Ting-Yu Yeh
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Patent number: 11967546Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.Type: GrantFiled: July 21, 2022Date of Patent: April 23, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shang-Yun Hou, Hsien-Pin Hu, Sao-Ling Chiu, Wen-Hsin Wei, Ping-Kang Huang, Chih-Ta Shen, Szu-Wei Lu, Ying-Ching Shih, Wen-Chih Chiou, Chi-Hsi Wu, Chen-Hua Yu
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Publication number: 20240103220Abstract: A device includes a first package connected to an interconnect substrate, wherein the interconnect substrate includes conductive routing; and a second package connected to the interconnect substrate, wherein the second package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler and to a photodetector; a via extending through the substrate; an interconnect structure over the photonic layer, wherein the interconnect structure is connected to the photodetector and to the via; and an electronic die bonded to the interconnect structure, wherein the electronic die is connected to the interconnect structure.Type: ApplicationFiled: December 1, 2023Publication date: March 28, 2024Inventors: Chen-Hua Yu, Hsing-Kuo Hsia, Kuo-Chiang Ting, Sung-Hui Huang, Shang-Yun Hou, Chi-Hsi Wu
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Publication number: 20240105627Abstract: Semiconductor devices and methods of manufacture are provided. In embodiments the semiconductor device includes a substrate, a first interposer bonded to the substrate, a second interposer bonded to the substrate, a bridge component electrically connecting the first interposer to the second interposer, two or more first dies bonded to the first interposer; and two or more second dies bonded to the second interposer.Type: ApplicationFiled: December 1, 2023Publication date: March 28, 2024Inventors: Shang-Yun Hou, Hsien-Pin Hu
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Publication number: 20240096719Abstract: A semiconductor device includes a first substrate, an electronic component, and a lid. The first substrate includes a first substrate top side, a first substrate bottom side opposite to the first substrate top side, a first substrate lateral side interposed between the first substrate top side and the first substrate bottom side, and a connector structure. The electronic component is coupled to the first substrate top side and coupled to the connector structure. The lid includes a wall part including a ring part coupled to the first substrate top side, a first part of an overhang part coupled to the first substrate lateral side, and a second part of the overhang part extending from the first part of the overhang part away from the first substrate lateral side.Type: ApplicationFiled: November 22, 2023Publication date: March 21, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuan-Yu Huang, Sung-Hui Huang, Shang-Yun Hou, Chien-Yuan Huang
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Publication number: 20240099030Abstract: A bonded assembly includes an interposer; a semiconductor die that is attached to the interposer and including a planar horizontal bottom surface and a contoured sidewall; a high bandwidth memory (HBM) die that is attached to the interposer; and a dielectric material portion contacting the semiconductor die and the interposer. The contoured sidewall includes a vertical sidewall segment and a non-horizontal, non-vertical surface segment that is adjoined to a bottom edge of the vertical sidewall segment and is adjoined to an edge of the planar horizontal bottom surface of the semiconductor die. The vertical sidewall segment and the non-horizontal, non-vertical surface segment are in contact with the dielectric material portion. The contoured sidewall may provide a variable lateral spacing from the HBM die to reduce local stress in a portion of the HBM die that is proximal to the interposer.Type: ApplicationFiled: April 20, 2023Publication date: March 21, 2024Inventors: Kuan-Yu Huang, Sung-Hui Huang, Kuo-Chiang Ting, Chia-Hao Hsu, Hsien-Pin Hsu, Chih-Ta Shen, Shang-Yun Hou
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Patent number: 11916009Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, a molding compound and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The at least one semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The molding compound is disposed over the interposer and laterally encapsulates the at least one semiconductor die. The molding compound laterally wraps around the interposer and the molding compound at least physically contacts a portion of the sidewalls of the interposer. The connectors are disposed on the second surface of the interposer, and are electrically connected with the at least one semiconductor die through the interposer.Type: GrantFiled: May 30, 2022Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chi-Ming Huang, Ping-Kang Huang, Sao-Ling Chiu, Shang-Yun Hou
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Publication number: 20240063177Abstract: A semiconductor device includes a first Chip-On-Wafer (CoW) device having a first interposer and a first die attached to a first side of the first interposer; a second CoW device having a second interposer and a second die attached to a first side of the second interposer, the second interposer being laterally spaced apart from the first interposer; and a redistribution structure extending along a second side of the first interposer opposing the first side of the first interposer and extending along a second side of the second interposer opposing the first side of the second interposer, the redistribution structure extending continuously from the first CoW device to the second CoW device.Type: ApplicationFiled: November 1, 2023Publication date: February 22, 2024Inventors: Jiun Yi Wu, Chen-Hua Yu, Shang-Yun Hou
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Publication number: 20240055468Abstract: A method of forming an inductor including forming a first redistribution structure on a substrate, forming a first conductive via over and electrically connected to the first redistribution structure, depositing a first magnetic material over a top surface and sidewalls of the first conductive via, coupling a first die and a second die to the first redistribution structure, encapsulating the first die, the second die, and the first conductive via in an encapsulant, and planarizing the encapsulant and the first magnetic material to expose the top surface of the first conductive via while a remaining portion of the first magnetic material remains on sidewalls of the first conductive via, where the first conductive via and the remaining portion of the first magnetic material provide an inductor.Type: ApplicationFiled: January 23, 2023Publication date: February 15, 2024Inventors: Wei-Yu Chen, Chung-Hui Chen, Hao-Cheng Hou, Jung Wei Cheng, Tsung-Ding Wang, Chien-Hsun Lee, Shang-Yun Hou
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Publication number: 20240047509Abstract: A method includes forming an inductor die, which includes forming a metal via over a substrate, forming a magnetic shell encircling the metal via, with the metal via and the magnetic shell collectively forming an inductor, and depositing a dielectric layer around the magnetic shell. The method further includes placing the inductor die over a carrier, encapsulating the inductor die in an encapsulant, forming redistribution lines electrically connecting to the inductor, and bonding a device die to the redistribution lines. The device die is electrically coupled to the inductor through the redistribution lines.Type: ApplicationFiled: January 5, 2023Publication date: February 8, 2024Inventors: Hao-Cheng Hou, Tsung-Ding Wang, Jung Wei Cheng, Chien-Hsun Lee, Shang-Yun Hou
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Patent number: 11852868Abstract: A device includes a first package connected to an interconnect substrate, wherein the interconnect substrate includes conductive routing; and a second package connected to the interconnect substrate, wherein the second package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler and to a photodetector; a via extending through the substrate; an interconnect structure over the photonic layer, wherein the interconnect structure is connected to the photodetector and to the via; and an electronic die bonded to the interconnect structure, wherein the electronic die is connected to the interconnect structure.Type: GrantFiled: July 26, 2022Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chen-Hua Yu, Hsing-Kuo Hsia, Kuo-Chiang Ting, Sung-Hui Huang, Shang-Yun Hou, Chi-Hsi Wu
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Patent number: 11854983Abstract: Semiconductor devices and methods of manufacture are provided. In embodiments the semiconductor device includes a substrate, a first interposer bonded to the substrate, a second interposer bonded to the substrate, a bridge component electrically connecting the first interposer to the second interposer, two or more first dies bonded to the first interposer; and two or more second dies bonded to the second interposer.Type: GrantFiled: July 26, 2022Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shang-Yun Hou, Hsien-Pin Hu
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Patent number: 11848304Abstract: A semiconductor device includes a first Chip-On-Wafer (CoW) device having a first interposer and a first die attached to a first side of the first interposer; a second CoW device having a second interposer and a second die attached to a first side of the second interposer, the second interposer being laterally spaced apart from the first interposer; and a redistribution structure extending along a second side of the first interposer opposing the first side of the first interposer and extending along a second side of the second interposer opposing the first side of the second interposer, the redistribution structure extending continuously from the first CoW device to the second CoW device.Type: GrantFiled: July 20, 2022Date of Patent: December 19, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jiun Yi Wu, Chen-Hua Yu, Shang-Yun Hou
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Publication number: 20230395564Abstract: A method includes bonding a first package component over a second package component, dispensing a first underfill between the first package component and the second package component, and bonding a third package component over the second package component. A second underfill is between the third package component and the second package component. The first underfill and the second underfill are different types of underfills.Type: ApplicationFiled: August 8, 2023Publication date: December 7, 2023Inventors: Kuan-Yu Huang, Li-Chung Kuo, Sung-Hui Huang, Shang-Yun Hou
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Publication number: 20230393336Abstract: A method includes forming a first photonic package, wherein forming the first photonic package includes patterning a silicon layer to form a first waveguide, wherein the silicon layer is on an oxide layer, and wherein the oxide layer is on a substrate; forming vias extending into the substrate; forming a first redistribution structure over the first waveguide and the vias, wherein the first redistribution structure is electrically connected to the vias; connecting a first semiconductor device to the first redistribution structure; removing a first portion of the substrate to form a first recess, wherein the first recess exposes the oxide layer; and filling the first recess with a first dielectric material to form a first dielectric region.Type: ApplicationFiled: July 25, 2023Publication date: December 7, 2023Inventors: Hsing-Kuo Hsia, Chen-Hua Yu, Kuo-Chiang Ting, Shang-Yun Hou
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Publication number: 20230387058Abstract: In an embodiment, an interposer has a first side, a first integrated circuit device attached to the first side of the interposer with a first set of conductive connectors, each of the first set of conductive connectors having a first height, a first die package attached to the first side of the interposer with a second set of conductive connectors, the second set of conductive connectors including a first conductive connector and a second conductive connector, the first conductive connector having a second height, the second conductive connector having a third height, the third height being different than the second height, a first dummy conductive connector being between the first side of the interposer and the first die package, an underfill disposed beneath the first integrated circuit device and the first die package, and an encapsulant disposed around the first integrated circuit device and the first die package.Type: ApplicationFiled: August 9, 2023Publication date: November 30, 2023Inventors: Kuan-Yu Huang, Sung-Hui Huang, Shang-Yun Hou, Shu Chia Hsu, Yu-Yun Huang, Wen-Yao Chang, Yu-Jen Cheng
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Patent number: 11830745Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a semiconductor device comprising an interconnecting structure consisting of a plurality of thin film layers and a plurality of metal layers disposed therein, each of the plurality of metal layers having substantially a same top surface area, and a die comprising an active surface and a backside surface opposite the active surface, the active surface being directly coupled to a first side of the interconnecting structure. The semiconductor device further comprises a first connector directly coupled to a second side of the interconnecting structure, the second side being opposite the first side.Type: GrantFiled: June 21, 2021Date of Patent: November 28, 2023Assignee: TAIWANN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tzu-Wei Chiu, Cheng-Hsien Hsieh, Hsien-Pin Hu, Kuo-Ching Hsu, Shang-Yun Hou, Shin-Puu Jeng
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Publication number: 20230378132Abstract: A semiconductor device includes: a substrate; a plurality of dies attached to a first side of the substrate; a molding material on the first side of the substrate around the plurality of dies; a first redistribution structure on a second side of the substrate opposing the first side, where the first redistribution structure includes dielectric layers and conductive features in the dielectric layers, where the conductive features include conductive lines, vias, and dummy metal patterns isolated from the conductive lines and the vias; and conductive connectors attached to a first surface of the first redistribution structure facing away from the substrate.Type: ApplicationFiled: January 5, 2023Publication date: November 23, 2023Inventors: Wen-Wei Shen, Sung-Hui Huang, Shang-Yun Hou, Sen-Bor Jan, Szu-Po Huang, Kuan-Yu Huang
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Patent number: 11810793Abstract: One embodiment includes partially forming a first through via in a substrate of an interposer, the first through via extending into a first side of the substrate of the interposer. The method also includes bonding a first die to the first side of the substrate of the interposer. The method also includes recessing a second side of the substrate of the interposer to expose the first through via, the first through via protruding from the second side of the substrate of the interposer, where after the recessing, the substrate of the interposer is less than 50 ?m thick. The method also includes and forming a first set of conductive bumps on the second side of the substrate of the interposer, at least one of the first set of conductive bumps being electrically coupled to the exposed first through via.Type: GrantFiled: July 26, 2022Date of Patent: November 7, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chung-Yu Lu, Ping-Kang Huang, Sao-Ling Chiu, Shang-Yun Hou