Abstract: A lorry and a lorry tank are provided. The lorry tank includes a tank body and one or two return tube(s). The tank body has at least one manhole, at least one air hole, a liquid hole and a circulation hole that are communicated to a storage space inside the tank body. One end of the return tube is connected to the circulation hole, and another end of the return tube extends to the storage space.

Abstract: A method includes forming a drain region in a first layer on a semiconductor substrate. The drain region is formed comprising a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The method also comprises forming a source region free from contact with and surrounding the drain region in the first layer. The first drain end portion and the second drain end portion are formed having a same doping type and a different doping concentration than the drain rectangular portion.

Abstract: A semiconductor structure includes a substrate, a semiconductor device in the substrate, and an isolating structure in the substrate and adjacent to the semiconductor device. The isolating structure has a roughness surface at a sidewall of the isolating structure, and the roughness surface includes carbon atoms thereon.

Abstract: A semiconductor device comprises a semiconductor substrate, a first layer over the semiconductor substrate, and a drain region in the first layer. The drain region comprises a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region free from contact with and surrounding the drain region in the first layer. The first drain end portion and the second drain end portion have a same doping type and a different doping concentration than the drain rectangular portion.

Abstract: The present disclosure relates to an integrated circuit with a termination region, and an associated method of formation. In some embodiments, the integrated circuit comprises a cell region and a termination region. The termination region is disposed at an outer periphery of the cell region. The cell region comprises an array of device cells. The termination region comprises a plurality of termination rings encompassing the cell region. The plurality of termination rings have different depths.

Abstract: A semiconductor device includes a gate structure, a source region and a drain region. The source region and the drain region are on opposite sides of the gate structure. The source region includes a first region of a first conductivity type and a second region of a second conductivity type. The second conductivity type is opposite to the first conductivity type. The first region is between the second region and the gate structure. The second region includes at least one projection protruding into the first region and toward the gate structure.

Abstract: A semiconductor device having a super junction structure includes a substrate, an epitaxial layer of a first conductivity type, a first trench, a first doped region of a second conductivity type opposite to the first conductivity type, a second trench and a second doped region of the first conductivity type. The epitaxial layer of the first conductivity type is over the substrate. The first trench is in the epitaxial layer. The first doped region of the second conductivity type is in the epitaxial layer and surrounds the first trench. The second trench is in the epitaxial layer and separated from the first trench. The second doped region of the first conductivity type is in the epitaxial layer and surrounds the second trench. The second doped region has a dopant concentration greater than a dopant concentration of the epitaxial layer. A method for manufacturing the semiconductor device is also provided.

Abstract: A server device has a case, a backplane board mounted inside the case, a plurality of data storage device replacement mechanisms inserted inside the case, a plurality of first data storage devices and a plurality of second data storage devices. The data storage device replacement mechanism includes a tray, a connector assembly and a circuit board. The connector assembly is disposed inside an accommodation space of the tray and includes a first connector and a second connector. The circuit board is installed inside a second arrangement area of the tray and electrically connected to the first connector, the second connector and the backplane board. The first data storage device is arranged inside a first arrangement area of the tray and electrically connected to the first connector. The second data storage device is arranged inside the second arrangement area of the tray and electrically connected to the second connector.

Abstract: Embodiments for the present disclosure include a semiconductor device, an ultra-high voltage (UHV) laterally-diffused metal-oxide-semiconductor (LDMOS) transistor, and methods of forming the same. An embodiment includes a first well region of a first conductivity type in a top surface of a substrate, and a second well region of a second conductivity type in the top surface of the substrate. The second well region laterally separated from the first well region by a portion of the substrate. The embodiment further includes a third region of the second conductivity type in the first well region, and a first field oxide region in the first well region, a second field oxide region in the second well region, the second field oxide region having a second bottom surface, and the first field oxide region having a first bottom surface lower than the second bottom surface and on and directly contacting the third region.

Abstract: A semiconductor device includes a gate structure, and a source region and a drain region on opposite sides of the gate structure. The source region comprises a first region of a first conductivity type, and a second region of a second conductivity type, the second conductivity type opposite to the first conductivity type. The first region is arranged between the second region and the gate structure. The second region comprises at least one projection protruding into the first region and toward the gate structure.

Abstract: A server system utilizing a backplane structure comprises first and second hard disk modules; a first backplane comprising a first wiring board comprising air vents and passive components and a second wiring board connected to a bottom portion of the first wiring board at a first angle and comprising first active components; and a second backplane comprising a third wiring board comprising second air vents and second passive components and a fourth wiring board connected to a bottom portion of the third wiring board at a second angle and comprising second active components thereon; wherein the first and second backplanes are disposed between the first and second hard disk modules; the first wiring board is directly corresponding to the first hard disk module; the third wiring board is directly corresponding to the second hard disk module; the first backplane is higher than the second backplane.

Abstract: A data storage connecting device includes a circuit board, a first connector, a second connector and a third connector. The circuit board has a first connecting end and a second connecting end. The first connector and a second connector are both disposed on the first connecting end and respectively at two sides of a long axis of the circuit board, a location of the second connector connecting with a data storage device being opposite to that of the first connector connecting with another data storage device. The third connector is disposed on the second connecting end for transmitting data from two data storage devices connected to the first connector and the second connector, respectively, via the circuit to a server device, or vice versa.

Abstract: A semiconductor device includes a gate structure, and a source region and a drain region on opposite sides of the gate structure. The source region comprises a first region of a first conductivity type, and a second region of a second conductivity type, the second conductivity type opposite to the first conductivity type. The first region is arranged between the second region and the gate structure. The second region comprises at least one projection protruding into the first region and toward the gate structure.

Abstract: A semiconductor device comprises a semiconductor substrate, a first layer over the semiconductor substrate, and a drain region in the first layer. The drain region comprises a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region free from contact with and surrounding the drain region in the first layer. The first drain end portion and the second drain end portion have a same doping type and a different doping concentration than the drain rectangular portion.

Abstract: A super junction includes a substrate and an epitaxial layer over the substrate, the epitaxial layer having a first dopant type. The super junction further includes an angled trench in the epitaxial layer, the angled trench having sidewalls disposed at an angle ranging from about 85-degrees to about 89-degrees with respect to a top surface of the epitaxial layer. The super junction further includes a doped body in the epitaxial layer surrounding the angled trench, the doped body having a second dopant type, the second dopant type opposite that of the first dopant type.

Abstract: A server system utilizing a backplane structure comprises first and second hard disk modules; a first backplane comprising a first wiring board comprising air vents and passive components and a second wiring board connected to a bottom portion of the first wiring board at a first angle and comprising first active components; and a second backplane comprising a third wiring board comprising second air vents and second passive components and a fourth wiring board connected to a bottom portion of the third wiring board at a second angle and comprising second active components thereon; wherein the first and second backplanes are disposed between the first and second hard disk modules; the first wiring board is directly corresponding to the first hard disk module; the third wiring board is directly corresponding to the second hard disk module; the first backplane is higher than the second backplane.

Abstract: A data storage connecting device includes a circuit board, a first connector, a second connector and a third connector. The circuit board has a first connecting end and a second connecting end. The first connector and a second connector are both disposed on the first connecting end and respectively at two sides of a long axis of the circuit board, a location of the second connector connecting with a data storage device being opposite to that of the first connector connecting with another data storage device. The third connector is disposed on the second connecting end for transmitting data from two data storage devices connected to the first connector and the second connector, respectively, via the circuit to a server device, or vice versa.

Abstract: A data storage expanding apparatus is electrically coupled to a terminal equipment and multiple data storage groups. Each data storage group includes a plurality of data storage devices. The data storage expanding apparatus configured to transmit an operating data between the terminal equipment and to a particular data storage device. The data storage expanding apparatus includes a data storage expanding module and multiple signal expanding modules. The data storage expanding module is electrically coupled to the terminal equipment. The signal expanding modules are electrically coupled in series, and to the data storage groups, respectively. One of the signal expanding modules is electrically coupled to the data storage expanding module. The operating data signal is transmitted to the signal expanding module via the data storage expanding module electrically connected to the signal expanding module, and then transmitted to particular data storage device via the signal expanding module.

Abstract: Embodiments for the present disclosure include a semiconductor device, an ultra-high voltage (UHV) laterally-diffused metal-oxide-semiconductor (LDMOS) transistor, and methods of forming the same. An embodiment includes a first well region of a first conductivity type in a top surface of a substrate, and a second well region of a second conductivity type in the top surface of the substrate. The second well region laterally separated from the first well region by a portion of the substrate. The embodiment further includes a third region of the second conductivity type in the first well region, and a first field oxide region in the first well region, a second field oxide region in the second well region, the second field oxide region having a second bottom surface, and the first field oxide region having a first bottom surface lower than the second bottom surface and on and directly contacting the third region.

Abstract: A server device has a case, a backplane board mounted inside the case, a plurality of data storage device replacement mechanisms inserted inside the case, a plurality of first data storage devices and a plurality of second data storage devices. The data storage device replacement mechanism includes a tray, a connector assembly and a circuit board. The connector assembly is disposed inside an accommodation space of the tray and includes a first connector and a second connector. The circuit board is installed inside a second arrangement area of the tray and electrically connected to the first connector, the second connector and the backplane board. The first data storage device is arranged inside a first arrangement area of the tray and electrically connected to the first connector. The second data storage device is arranged inside the second arrangement area of the tray and electrically connected to the second connector.