Abstract: A novel MOS transistor structure and methods of making the same are provided. The structure includes a MOS transistor formed on a semiconductor substrate of a first conductivity type with a plug region of first conductivity type formed in the drain extension region of second conductivity type (in the case of a high voltage MOS transistor) or in the lightly doped drain (LDD) region of second conductivity type (in the case of a low voltage MOS transistor). Such structure leads to higher on-breakdown voltage. The inventive principle applies to MOS transistors formed on bulky semiconductor substrate and MOS transistors formed in silicon-on-insulator configuration.

Abstract: An medical device such as a guidewire or a catheter having a flexible elongate component which comprises a thermoplastic rigid rod polymer, which component may comprise a bundle of threads, a sleeve, a coil, a co-extrusion, a strut, or other suitable component.

Abstract: An medical device such as a guidewire or a catheter having a flexible elongate component which comprises a thermoplastic rigid rod polymer, which component may comprise a bundle of threads, a sleeve, a coil, a co-extrusion, a strut, or other suitable component.

Abstract: A method of forming a micromechanical structure, wherein at least one micromechanical structural layer is provided above a substrate. The micromechanical structural layer is sustained between a lower sacrificial silicon layer and an upper sacrificial silicon layer, wherein a metal silicide layer is formed between the lower and upper sacrificial silicon layers to increase interface adhesion therebetween. The upper sacrificial silicon layer, the metal silicide layer and the lower sacrificial silicon layer are then removed to release the micromechanical structural layer.

Abstract: A novel MOS transistor structure and methods of making the same are provided. The structure includes a MOS transistor formed on a semiconductor substrate of a first conductivity type with a plug region of first conductivity type formed in the drain extension region of second conductivity type (in the case of a high voltage MOS transistor) or in the lightly doped drain (LDD) region of second conductivity type (in the case of a low voltage MOS transistor). Such structure leads to higher on-breakdown voltage. The inventive principle applies to MOS transistors formed on bulky semiconductor substrate and MOS transistors formed in silicon-on-insulator configuration.

Abstract: A scan line driving method of a liquid crystal display divides scan times of a first scan line and a second scan line so that enabled times of the first scan line and the second scan line respectively equal a charge time and a discharge time. The first scan line and the second scan line respectively control a first row of pixels and a second row of pixels of the liquid crystal display.

Abstract: A micromirror for micro-electro-mechanical systems. The micromirror comprises a pad layer, a doped aluminum layer containing 0.002 wt % to 0.3 wt % of silicon overlying the pad layer and a protective layer overlying the doped aluminum layer.

Abstract: A micromirror for micro-electro-mechanical systems. The micromirror comprises a pad layer, a doped aluminum layer containing 0.002 wt % to 0.3 wt % of silicon overlying the pad layer and a protective layer overlying the doped aluminum layer.

Abstract: A micromirror which includes a substrate, a reflective layer comprising pure aluminum overlying the substrate and a protective layer comprising titanium nitride overlying the reflective layer is disclosed.

Abstract: A method of forming a micromechanical structure, wherein at least one micromechanical structural layer is provided above a substrate. The micromechanical structural layer is sustained between a lower sacrificial silicon layer and an upper sacrificial silicon layer, wherein a metal silicide layer is formed between the lower and upper sacrificial silicon layers to increase interface adhesion therebetween. The upper sacrificial silicon layer, the metal silicide layer and the lower sacrificial silicon layer are then removed to release the micromechanical structural layer.

Abstract: A micromirror which includes a substrate, a reflective layer comprising pure aluminum overlying the substrate and a protective layer comprising titanium nitride overlying the reflective layer is disclosed.

Abstract: A laser pointing device having a thermal detection function is applied in a garage to guide a driver to park a car. The laser pointing device has a thermal detector, a laser diode, and a drive module. The thermal detector is used to detect the temperature of the ambient environment. The drive module is electrically connected between the thermal detector and the laser diode. When the thermal detector detects that the temperature of the ambient environment exceeds a threshold temperature, the drive module will drive the laser diode to emit a laser light beam. Thereby, when a driver parks his car in a garage, the laser light beam will be emitted to guide him to park the car after the thermal detector detects that the temperature of the car's engine exceeds the threshold temperature.

Abstract: An medical device such as a guidewire or a catheter having a flexible elongate component which comprises a thermoplastic rigid rod polymer, which component may comprise a bundle of threads, a sleeve, a coil, a co-extrusion, a strut, or other suitable component.

Abstract: A method of forming a micromechanical structure. A first sacrificial silicon layer is formed on a substrate. A mirror plate is formed on part of the first sacrificial silicon layer. Argon sputtering is performed on the mirror plate and the first sacrificial silicon layer. A hydrogen treatment is performed on the first sacrificial silicon layer to form an H-treated silicon surface thereon. A second sacrificial silicon layer is formed over the mirror plate and the first sacrificial silicon layer. At least one hole is formed to penetrate the second sacrificial silicon layer, the mirror plate and the first sacrificial silicon layer. A conductive material fills in the hole to define a mirror support structure attached to the mirror plate and the substrate. The first and second sacrificial layers are removed to release the mirror plate.