Abstract: The present disclosure, in some embodiments, relates to a method of forming a capacitor structure. The method includes forming a capacitor dielectric layer over a lower electrode layer, and forming an upper electrode layer over the capacitor dielectric layer. The upper electrode layer is etched to define an upper electrode and to expose a part of the capacitor dielectric layer. A spacer structure is formed over horizontally extending surfaces of the upper electrode layer and the capacitor dielectric layer and also along sidewalls of the upper electrode. The spacer structure is etched to remove the spacer structure from over the horizontally extending surfaces of the upper electrode layer and the capacitor dielectric layer and to define a spacer. The capacitor dielectric layer and the lower electrode layer are etched according to the spacer to define a capacitor dielectric and a lower electrode.

Abstract: An operation-indication mode switching structure, a circuit, and a method for operating the same are provided. The operation-indication mode switching structure is disposed on a housing of a device, and includes a switching mechanism that is used to switch multiple operation-indication modes. The switching mechanism is selectively connected with one of multiple signal terminals. When the switching mechanism is manipulated to switch to one of the operation-indication modes, a control unit of the device receives an operation-indication mode switching signal generated by the switching mechanism conducting or circuit-shorting one of the multiple signal terminals. A corresponding operation-indication mode that is a covert mode, a stealth mode, or a normal mode can be determined. The control unit is used to control an indication function of the device according to the operation-indication mode that is switched to.

Abstract: A body-worn camera and an operation method thereof are provided, and the body-worn camera a central processing unit, a video recording module, a turntable, and a main button. The video recording module is electrically connected to the central processing unit. The turntable is electrically connected to the central processing unit. The main button is electrically connected to the central processing unit. After the video recording module completes recording a video, when the central processing unit receives a category mode signal from the turntable and receives a category name confirmation signal from the main button, the central processing unit executes a video tagging program, and the video tagging program saves a corresponding relationship between a category name and the video.

Abstract: A floating point pre-alignment structure for computing-in-memory applications includes a time domain exponent computing block and an input mantissa pre-align block. The time domain exponent computing block is configured to compute a plurality of original input exponents and a plurality of original weight exponents to generate a plurality of flags. Each of the flags is determined by adding one of the original input exponents and one of the original weight exponents. The input mantissa pre-align block is configured to receive a plurality of original input mantissas and shift the original input mantissas according to the flags to generate a plurality of weighted input mantissas, and sparsity of the weighted input mantissas is greater than sparsity of the original input mantissas. Each of the flags has a negative correlation with a sum of the one of the original input exponents and the one of the original weight exponents.

Abstract: The present disclosure relates to an integrated chip including a dielectric structure over a substrate. A first capacitor is disposed between sidewalls of the dielectric structure. The first capacitor includes a first electrode between the sidewalls of the dielectric structure and a second electrode between the sidewalls and over the first electrode. A second capacitor is disposed between the sidewalls. The second capacitor includes the second electrode and a third electrode between the sidewalls and over the second electrode. A third capacitor is disposed between the sidewalls. The third capacitor includes the third electrode and a fourth electrode between the sidewalls and over the third electrode. The first capacitor, the second capacitor, and the third capacitor are coupled in parallel by a first contact on a first side of the first capacitor and a second contact on a second side of the first capacitor.

Abstract: A p-GaN high-electron-mobility transistor (HEMT) includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped layer. A source and a drain are electrically connected to the channel layer and the supply layer, respectively. A gate is located on the doped layer. The hydrogen barrier layer is doped with fluorine.

Abstract: A radio resource allocation method and a radio resource allocation system are provided. The radio resource allocation method includes: obtaining quality parameters of each of resource blocks, in which the quality parameters correspond to weight coefficients, respectively; adjusting the weight coefficients for a service requirement of each of network slices, and calculating, according to the weight coefficients and the quality parameters of each of the resource blocks, priority indices used to allocate the resource blocks to the network slices, respectively; and generating priority orders for allocating the resource blocks to the network slices, and configuring the base station to allocate the resource blocks to the network slices according to the priority orders.

Abstract: Disclosed is a diamine compound represented by Formula (1), in which R1, R2, R3, R4, R5, X1, X2, X3, X4, m, n, a, b, c, and d are as defined herein. Also disclosed are a method for manufacturing the diamine compound, a composition including the diamine compound having a (chain alkoxy-methylene) phenyl group or a (hydroxyl-methylene) phenyl group, and a polymer including the (chain alkoxy-methylene) phenyl group or the (hydroxyl-methylene) phenyl group.

Abstract: A precharge method for a data driver includes steps of: outputting a display data to a plurality of output terminals of the data driver; outputting a second precharge voltage to an output terminal among the plurality of output terminals prior to outputting the display data to the output terminal, to precharge the output terminal to a voltage level closer to an output voltage; and outputting a first precharge voltage to the output terminal prior to outputting the second precharge voltage. The first precharge voltage provides a faster voltage transition on the output terminal than the second precharge voltage.

Abstract: A mounting structure for connecting an electronic device to a mounting surface is provided. The mounting structure includes a mounting base, a linkage, and a bracket. The first end of the linkage pivots on the mounting base. The bracket is rotatably connected to the second end of the linkage, wherein the bracket includes a cable receiving groove. The electronic device is disposed on the bracket. The electronic device includes a cable. At least a portion of the cable extends into the cable receiving groove.

Abstract: A USB protocol-based IP infringement identification method for USB devices, including the following steps: S1, connecting an infringement identification device at a peer side of the USB host to be tested; S2, the USB host to be tested entering compliance mode; S3, the infringement identification device sending an X.LFPS file to the USB host to be tested; S4, upon the USB host to be tested receiving the X.LFPS file, the USB host to be tested sending IP copyright information to the infringement identification device; S5, determining whether the USB host to be tested infringes the IP. The infringement identification of the USB device to be tested is performed by using the compliance mode specified in the USB protocol, which is more stable, reliable and can also save costs.

Abstract: The present invention provides a core-shell cathode characterized by comprising: a shell comprising an electrically conductive, porous carbon material; and a core, which is an inner cavity enclosed within the shell, wherein the core contains an active material and an electrolyte, and the active material comprises liquid polysulfide having the general formula Li2Sx, wherein 4?x?8; the shell comprises a first layer, an O-ring and a second layer sequentially stacked from bottom to top to form the inner cavity to contain the active material and the electrolyte. The present invention also provides a lithium-sulfur battery using said core-shell cathode, which attains both high sulfur loading and high sulfur content, and simultaneously satisfies high energy density, high capacity retention and high cycle stability under lean-electrolyte condition.

Abstract: A manufacturing method of a modified polymer layer modified by hydroxyapatite is provided in the present disclosure, including following steps: (a) providing a polymer layer; (b) plasma-activating acrylic acid using an atmospheric cold plasma device to modify a surface of the polymer layer to obtain an acrylic-modified polymer layer; (c) immersing the acrylic-modified polymer layer in a first solution containing a calcium ion to obtain a calcium-containing modified layer; and (d) immersing the calcium-containing modified layer in a second solution containing phosphate salt to obtain a modified polymer layer modified by hydroxyapatite.

Abstract: A method of estimating greenhouse gas emission, performed by a processing device, includes: obtaining at least one time period of a number of working stations for a target manufacturing process of a product; obtaining a number of first power consumption data of the target manufacturing process, wherein the first power consumption data correspond to the working stations respectively; calculating a number of second power consumption data based on the at least one time period and the first power consumption data; searching for a number of target coefficients corresponding to the plurality of working stations respectively in coefficient database based on the target manufacturing process; and calculating greenhouse gas emission data of the target manufacturing process based on the second power consumption data and the target coefficients.

Abstract: An internal rotor type nail drive device of electric nail gun, comprising a nailing rod and an internal rotor type rotary actuator that can output a specific rotation angle and can drive the nailing rod to move downward for nailing. Specifically, the rotary actuator comprises a stator and a rotor arranged inside the stator, even groups of electromagnetic mutual action components are configured in pairs between the stator and the rotor, to generate a tangential force to drive the rotor to rotate for a specific rotation angle, and to drive the nailing rod to move for a nailing stroke. The nailing stroke can be determined by a specific rotation angle. Thus, through the above configuration of the rotary actuator, the structure of the electric nail gun can be simplified, and the kinetic energy for nailing can be increased.

Abstract: A semiconductor device includes a field effect transistor (FET). The FET includes a first channel, a first source and a first drain; a second channel, a second source and a second drain; and a gate structure disposed over the first and second channels. The gate structure includes a gate dielectric layer and a gate electrode layer. The first source includes a first crystal semiconductor layer and the second source includes a second crystal semiconductor layer. The first source and the second source are connected by an alloy layer made of one or more Group IV element and one or more transition metal elements. The first crystal semiconductor layer is not in direct contact with the second crystal semiconductor layer.

Abstract: A power supply suppression circuit (10), a chip and a communication terminal that only achieve the enhancement of the power supply suppression capability from an AC, without generating additional circuit power consumption. The power supply suppression circuit (10) comprises a sampling unit (105), a compensation unit (106), and an amplification unit (107). The sampling unit (105) is connected to the compensation unit (106), and the compensation unit (106) is connected to the amplification unit (107). The power supply suppression circuit (10) obtains an AC signal from a preset sampling node position of a low dropout regulator, and generates an enhancement signal in phase with the AC signal on a power supply (Vdd) on the basis of the AC signal, such that the input end voltage of the power output stage of the low dropout regulator immediately follows the voltage change of the power supply (Vdd).

Abstract: An overhead hoist transfer apparatus includes a rail assembly including a straight rail having an empty section, and a curved rail having a curved empty section; an engine including a first LSD having first and second wheels at two sides respectively; and a second LSD having third and fourth wheels at two sides respectively; a moving carriage driven by the engine and suspended from the rail assembly; first and second guide wheels disposed on the first LSD; third and fourth guide wheels disposed on the second LSD; and two guide boards disposed above a joining point of the straight rail and the curved rail. An elevation of the guide boards is equal to that of the guide wheels. The guide board includes a straight edge and a curved edge.

Abstract: A memory circuit and a method for reading a memory circuit are provided. The memory circuit includes reference memory cells and operation memory cells. The method includes reading a selected reference memory cell at a first time to get a first voltage; reading the selected reference memory cell at a second time after the first time to get a second voltage; adjusting a read voltage of the memory cell to be an adjusted read voltage of the memory cell according to the voltage difference between the first voltage and the second voltage; applying the adjusted read voltage on a selected operation memory cell corresponding to the selected reference memory cell; and applying the adjusted read voltage on other selected operation memory cells in a same row of the memory array corresponding to the selected reference memory cell.

Abstract: A package structure includes a first die and a second die embedded in a first molding material, a first redistribution structure over the first die and the second die, a second molding material over portions of the first die and the second die, wherein the second molding material is disposed between a first portion of the first redistribution structure and a second portion of the first redistribution structure, a first via extending through the second molding material, wherein the first via is electrically connected to the first die, a second via extending through the second molding material, wherein the second via is electrically connected to the second die and a silicon bridge electrically coupled to the first via and the second via.