Abstract: An organic/inorganic hybrid film represented by SiCxHyOz (x>0, y?0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.

Abstract: A wavelength conversion light source apparatus includes a fundamental wave light source configured to emit a fundamental wave, a nonlinear crystal configured to convert a wavelength of the fundamental wave by being irradiated with the fundamental wave and making the fundamental wave pass therethrough, and a movement unit configured to place the nonlinear crystal thereon and continuously move the nonlinear crystal within a plane, where a phase matching condition is not violated, so that a passage path of the fundamental wave passing through the nonlinear crystal is changed.

Abstract: Various embodiments include a male surface fastener member configured for being molded onto a surface of a foaming resin mold body. The male surface fastener member includes a plurality of male surface fastener strips connected with each other in an end-to-end relationship via a connecting portion that is integrally formed with at least the end portions of each male surface fastener strips. Each male surface fastener strip includes a base material having a first surface from which a plurality of engaging elements extend upwardly and first and second substantially lateral resin intrusion prevention walls that upwardly from the first surface along a width direction of the base material between the first and second longitudinal resin intrusion prevention walls. Each of the lateral resin intrusion prevention walls comprises a plurality of engaging elements that are arranged in series in a width direction of the first surface.

Abstract: An illumination beam irradiation apparatus for use in pattern inspection systems is disclosed, which is less in deterioration of optical components and in attenuation of illumination light. The illumination apparatus includes a light source which yields a fundamental wave, a beam-shaper unit which performs beam-shaping of the fundamental wave so that this wave has a prespecified shape, and a pattern generator unit which operates, upon receipt of the beam-shaped fundamental wave, to convert this incoming wave into illumination light with a shorter wavelength to thereby generate illumination light of a prespecified shape. The illuminator also includes an image relay unit for guiding the illumination light that was generated by the pattern generator to fall onto a workpiece under inspection, such as a photomask or else.

Abstract: An organic/inorganic hybrid film represented by SiCxHyOz (x>0, y?0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.

Abstract: Various embodiments include a male surface fastener member configured for being molded onto a surface of a foaming resin mold body. The male surface fastener member includes a plurality of male surface fastener strips connected with each other in an end-to-end relationship via a connecting portion that is integrally formed with at least the end portions of each male surface fastener strips. Each male surface fastener strip includes a base material having a first surface from which a plurality of engaging elements extend upwardly and first and second substantially lateral resin intrusion prevention walls that upwardly from the first surface along a width direction of the base material between the first and second longitudinal resin intrusion prevention walls. Each of the lateral resin intrusion prevention walls comprises a plurality of engaging elements that are arranged in series in a width direction of the first surface.

Abstract: An organic/inorganic hybrid film represented by SiCx- HyOz (x>0, y?0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.

Abstract: The robot device according to this invention includes an arm mechanism, multiple hand mechanisms, and a control unit. The arm mechanism has its base end rotatably supported on a base point set in a predetermined position in the horizontal plane, and its free end moves among orthogonal coordinates in the horizontal plane. Each of the multiple hand mechanisms has its support end rotatably supported by the free end, and its holding end moves among polar coordinates in the horizontal plane. The holding ends hold substrates. The control unit drives the arm mechanism so that the free end approaches a base line connecting a base point with the center of a stage without passing over the base point, and drives the multiple hand mechanisms so that an export holding end moves along the base line and a non-export holding end separates from the export holding end.

Abstract: A wavelength conversion light source apparatus includes a fundamental wave light source configured to emit a fundamental wave, a nonlinear crystal configured to convert a wavelength of the fundamental wave by being irradiated with the fundamental wave and making the fundamental wave pass therethrough, and a movement unit configured to place the nonlinear crystal thereon and continuously move the nonlinear crystal within a plane, where a phase matching condition is not violated, so that a passage path of the fundamental wave passing through the nonlinear crystal is changed.

Abstract: In a method for fabricating a semiconductor device, interconnect grooves are formed in an insulating film on a substrate, and then a copper film is formed on the insulating film to fill the interconnect grooves. Subsequently, portions of the copper film existing outside the interconnect grooves are polished to form interconnects, and then a cleaning process is performed on the resulting substrate. Thereafter, moisture remaining around a portion of the insulating film exposed between the interconnects is removed in a vacuum.

Abstract: A pattern inspection apparatus is disclosed, which includes a first laser light source for emission of first laser light having a first wavelength, a second laser light source for emission of second laser light having a second wavelength, and a deep ultraviolet (DUV) light source for emission of DUV light with a wavelength of less than or equal to 266 nm based on the first laser light and the second laser light. A first optical fiber is provided for connecting between the first laser light source and the DUV light source. A second optical fiber is for connection between the second laser light source and the DUV light source. The apparatus also includes a pattern inspection unit with the DUV light source being built therein, for inspecting a workpiece pattern being tested by using the DUV light as illumination light therefore.

Abstract: The substrate processing apparatus relating to the present invention comprises a polishing section where wafers are sequentially arranged, and that has multiple polishing platens for polishing a metal film on the wafer surface in stages. The wafers are simultaneously conveyed between the polishing platens by a rotating head mechanism. Further, the wafers polished by the polishing platen for the final stage polishing are sequentially conveyed to a cleaning section and are cleaned. The wafers from the polishing section to the cleaning section are conveyed by a load-unload unit, a post-polishing wafer reversal unit and wet robots. Then, the operation of each part is controlled by an apparatus controller to start the cleaning processing of the polished wafers by the polishing platen for the final stage polishing within a predetermined time period from the completion of polishing by the polishing platen for the final stage polishing.

Abstract: An illumination beam irradiation apparatus for use in pattern inspection systems is disclosed, which is less in deterioration of optical components and in attenuation of illumination light. The illumination apparatus includes a light source which yields a fundamental wave, a beam-shaper unit which performs beam-shaping of the fundamental wave so that this wave has a prespecified shape, and a pattern generator unit which operates, upon receipt of the beam-shaped fundamental wave, to convert this incoming wave into illumination light with a shorter wavelength to thereby generate illumination light of a prespecified shape. The illuminator also includes an image relay unit for guiding the illumination light that was generated by the pattern generator to fall onto a workpiece under inspection, such as a photomask or else.

Abstract: A pattern inspection apparatus is disclosed, which includes a first laser light source for emission of first laser light having a first wavelength, a second laser light source for emission of second laser light having a second wavelength, and a deep ultraviolet (DUV) light source for emission of DUV light with a wavelength of less than or equal to 266 nm based on the first laser light and the second laser light. A first optical fiber is provided for connecting between the first laser light source and the DUV light source. A second optical fiber is for connection between the second laser light source and the DUV light source. The apparatus also includes a pattern inspection unit with the DUV light source being built therein, for inspecting a workpiece pattern being tested by using the DUV light as illumination light therefor.

Abstract: The plasma processing apparatus relating to the present invention has a measurement circuit for measuring an antenna bias voltage that varies according to an amount of electrical charge between an inner wall of a chamber and plasma generated in the chamber. The obtained antenna bias voltage is converted to a statistical value and is stored in a statistical value memory unit after being associated with a number of particles attached on a workpiece during the same plasma processing that the antenna bias voltage is obtained. A correspondence acquisition unit obtains a correspondence the antenna bias voltage and the number of particles based on stored data in the statistical value memory. Then, a prediction unit predicts the antenna bias voltage at which the number of particles reaches to a pre-determined value based on the correspondence obtained by the correspondence acquisition unit.

Abstract: The substrate processing apparatus relating to the present invention comprises a polishing section where wafers are sequentially arranged, and that has multiple polishing platens for polishing a metal film on the wafer surface in stages. The wafers are simultaneously conveyed between the polishing platens by a rotating head mechanism. Further, the wafers polished by the polishing platen for the final stage polishing are sequentially conveyed to a cleaning section and are cleaned. The wafers from the polishing section to the cleaning section are conveyed by a load-unload unit, a post-polishing wafer reversal unit and wet robots. Then, the operation of each part is controlled by an apparatus controller to start the cleaning processing of the polished wafers by the polishing platen for the final stage polishing within a predetermined time period from the completion of polishing by the polishing platen for the final stage polishing.

Abstract: A photolithography mask inspection apparatus has at least two sensors. One sensor is configured to sense light transmitted through an object to be inspected, and the other sensor senses light reflected off the object. A first optical system is arranged to expose a first portion of the object with a first light beam, and a second optical system is arranged to expose a second portion of the object, spaced form the first portion, with a second light beam. A third optical system focuses the transmitted light on to the first sensor, as well as the reflected light on to the second sensor. A defect detecting circuit is also provided to detect a defect of the object, based upon image data associated with the reflected and transmitted light.

Abstract: A method for manufacturing a semiconductor device is provided in which it is possible to perform process control taking account of wafer information and to deal with the process control in which a recipe is change from one wafer to another. The method comprises steps of inserting a process control system into the path of a network where a manufacturing execution system (MES) and a manufacturing apparatus are connected with each other by using a LAN, obtaining a process result on the lot of the wafers at a previous step through the use of the process control system to rewrite the process recipe, and transmitting the rewritten process recipe from the process control system to the manufacturing apparatus. Since the method includes the step of obtaining the process result on the lot effected at the previous step as wafer information, it is possible to calculate a control parameter taking account of the state of the wafers.

Abstract: A pattern inspection apparatus is disclosed, which includes a first laser light source for emission of first laser light having a first wavelength, a second laser light source for emission of second laser light having a second wavelength, and a deep ultraviolet (DUV) light source for emission of DUV light with a wavelength of less than or equal to 266 nm based on the first laser light and the second laser light. A first optical fiber is provided for connecting between the first laser light source and the DUV light source. A second optical fiber is for connection between the second laser light source and the DUV light source. The apparatus also includes a pattern inspection unit with the DUV light source being built therein, for inspecting a workpiece pattern being tested by using the DUV light as illumination light therefore.

Abstract: A photolithography mask inspection apparatus has at least two sensors. One sensor is configured to sense light transmitted through an object to be inspected, and the other sensor senses light reflected off the object. A first optical system is arranged to expose a first portion of the object with a first light beam, and a second optical system is arranged to expose a second portion of the object, spaced form the first portion, with a second light beam. A third optical system focuses the transmitted light on to the first sensor, as well as the reflected light on to the second sensor. A defect detecting circuit is also provided to detect a defect of the object, based upon image data associated with the reflected and transmitted light.