Abstract: A bioinformation acquiring apparatus includes at least one processor and a memory configured to store a program to be executed in the processor.

Abstract: A non oriented electrical steel sheet consists of a silicon steel sheet and an insulation coating. The silicon steel sheet includes an internally oxidized layer containing SiO2 in a surface thereof, an average thickness of the internally oxidized layer is 0.10 to 5.0 ?m, and a Vickers hardness in the internally oxidized layer is 1.15 to 1.5 times as compared with a Vickers hardness in a thickness central area.

Abstract: The molded surface fastener includes: a fastener member that has a plurality of engagement elements disposed upright on the first surface of a base portion, and a back member that is secured to the second surface of the fastener member and that is provided with a structure enabling passage of a synthetic resin. The base portion has a first base region of a predetermined thickness and a second base region formed to be thicker than the first base region, and the back member is secured to at least the second base region of the base portion. The adhesion strength of the back member to the fastener member is thus increased, enabling the back member to be held more firmly by the base portion.

Abstract: The purpose of the present invention is to provide an optical fiber amplifier capable of seamlessly and collectively amplifying optical signals in a plurality of bands. In order to achieve the aforementioned purpose, the optical fiber amplifier according to the present invention is the optical fiber amplifier that amplifies multiple wavelength bands, and in cross-section, one signal light primary propagation region, and a doped region where rare-earth ions have been added, wherein the doped region includes the rare-earth-doped optical fiber existing other than the propagation region.

Abstract: A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a N2 atmosphere at not less than 650° C. or in a N2+O2 atmosphere at not less than 500° C.

Abstract: A non-oriented electrical steel sheet is provided which has a chemical composition that contains, in mass%, C: 0.0050% or less, Si: 0.10 to 1.50%, Mn: 0.10 to 1.50%, sol. Al: 0.0050% or less, N: 0.0030% or less, S: 0.0040% or less, and O: 0.0050 to 0.0200%, and contains one or more elements selected from a group of La, Ce, Zr, Mg and Ca in a total amount of 0.0005 to 0.0200%, with the balance being Fe and impurities. A number density N of suitable oxide particles is 3.0×103 to 10×103 particles/cm2, and a number density n of oxide particles containing La and the like satisfies the expression n/N?0.01.

Abstract: A bioinformation acquiring apparatus includes at least one processor; and a memory configured to store a program to be executed in the processor. The processor acquires bioinformation in a chronological order; derives outlier level parameters, the outlier level parameter indicating a level of inclusion of outliers of the bioinformation in pieces of bioinformation acquired within a first duration; derives correction terms based on the bioinformation after removal of the outliers of the bioinformation from pieces of bioinformation acquired within a second duration that is longer than the first duration; selects one or both of a first correction procedure and a second correction procedure based on the outlier level parameters, as a correction procedure, the first correction procedure using the correction terms, the second correction procedure involving interpolation irrelevant to the correction terms; and corrects the outliers of the bioinformation within the first duration by the selected correction procedure.

Abstract: A non-oriented electrical steel sheet includes a silicon steel sheet and an insulation coating. When t is a thickness of the silicon steel sheet and when PDR is defined as (PDR=(maximum?minimum)/minimum×100) which indicates a ratio concerned with maximum and minimum of number densities of AlN precipitates in three areas which are 1/10t area, ?t area, and ½t area from a surface of the silicon steel sheet along a thickness direction, the PDR is 50% or less.

Abstract: A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a N2 atmosphere at not less than 650° C. or in a N2+O2 atmosphere at not less than 500° C.

Abstract: A non oriented electrical steel sheet consists of a silicon steel sheet and an insulation coating. The silicon steel sheet includes an internally oxidized layer containing SiO2 in a surface thereof, an average thickness of the internally oxidized layer is 0.10 to 5.0 ?m, and a vickers hardness in the internally oxidized layer is 1.15 to 1.5 times as compared with a vickers hardness in a thickness central area.

Abstract: A non oriented electrical steel sheet consists of a silicon steel sheet and an insulation coating. The silicon steel sheet contains Si, Al, and Mn as chemical composition, and an alignment degree to {5 5 7}<7 14 5> orientation in a central area along a thickness direction of the silicon steel sheet is 12 to 35.

Abstract: A bioinformation acquiring apparatus includes at least one processor; and a memory configured to store a program to be executed in the processor. The processor acquires bioinformation in a chronological order; derives outlier level parameters, the outlier level parameter indicating a level of inclusion of outliers of the bioinformation in pieces of bioinformation acquired within a first duration; derives correction terms based on the bioinformation after removal of the outliers of the bioinformation from pieces of bioinformation acquired within a second duration that is longer than the first duration; selects one or both of a first correction procedure and a second correction procedure based on the outlier level parameters, as a correction procedure, the first correction procedure using the correction terms, the second correction procedure involving interpolation irrelevant to the correction terms; and corrects the outliers of the bioinformation within the first duration by the selected correction procedure.

Abstract: A bioinformation acquiring apparatus includes at least one processor and a memory configured to store a program to be executed in the processor.

Abstract: A non-oriented electrical steel sheet includes a silicon steel sheet and an insulation coating. When t is a thickness of the silicon steel sheet and when PDR is defined as (PDR=(maximum?minimum)/minimum×100) which indicates a ratio concerned with maximum and minimum of number densities of AlN precipitates in three areas which are 1/10t area, ?t area, and ½t area from a surface of the silicon steel sheet along a thickness direction, the PDR is 50% or less.

Abstract: A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and AlxGa1-xN (0.1?x?1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.

Abstract: To provide a light-emitting diode in which cracking or peeling of interlayer insulating film is suppressed. The first interlayer insulating film is continuously formed in a film on a DBR layer, a first p-electrode, and a first n-electrode. The first interlayer insulating film is a multilayer formed by alternately depositing a SiO2 layer and a TiO2 layer, and the number of layers is eleven. The SiO2 layer is formed of a material having a property of generating compressive stress. When the light-emitting diode according to the first embodiment is exposed to a high temperature, the TiO2 layer in the first interlayer insulating film changes its property from generating compressive stress to generating tensile stress. The tensile stress by the TiO2 layer and the compressive stress by the SiO2 layer counteract each other. As a result, the internal stress of the first interlayer insulating film is relaxed.

Abstract: A light-emitting element includes an n-type semiconductor layer mainly including AlxGa1?XN (0.5?x?1), a p-type semiconductor layer, a light-emitting layer sandwiched between the n-type semiconductor layer and the p-type semiconductor layer, an n-electrode connected to the n-type semiconductor layer, and a plurality of p-electrodes that are connected to the p-type semiconductor layer and are arranged in a dot pattern. An area of the n-electrode is not less than 25% and not more than 50% of a chip area.

Abstract: There is provided a non-oriented magnetic steel sheet according to one aspect of the present invention including a predetermined composition, wherein a structure contains 99.0% by area or more of ferrite grains which do not have an unrecrystallized structure, wherein an average crystal grain size of the ferrite grains is 30 ?m to 180 ?m, wherein the ferrite grains contain metal Cu particles of which a number density is 10,000 to 10,000,000 number/?m3 on the inside thereof, wherein the metal Cu particles on the inside of the ferrite grains contain precipitation particles having a 9R structure of which a number density is 2% to 100% with respect to the number density of the metal Cu particles, and precipitation particles having a bee structure of which a number density is 0% to 98% with respect to the number density of the metal Cu particles, and wherein an average grain size of the metal Cu particles on the inside of the ferrite grains is 2.0 nm to 10.0 nm.

Abstract: A light-emitting element includes an n-type semiconductor layer mainly including AlxGa1-XN (0.5?x?1), a p-type semiconductor layer, a light-emitting layer sandwiched between the n-type semiconductor layer and the p-type semiconductor layer, an n-electrode connected to the n-type semiconductor layer, and a plurality of p-electrodes that are connected to the p-type semiconductor layer and are arranged in a dot pattern. An area of the n-electrode is not less than 25% and not more than 50% of a chip area.

Abstract: A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and AlxGa1-xN (0.1?x?1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.