Abstract: A memory system having a memory controller plus one or more registered memory modules, each registered memory module having a bank of memory chips and an associated register. A pre-register address/command bus connects the memory controller with the associated register. Each registered memory module has a post-register command/address bus that connects the memory chips in parallel with the associated register. The post-register command/address bus terminates with termination resistors that are connected to a voltage level that is approximately half of the supply voltage level. The memory controller provides chip select signals to the associated register of the registered memory modules. The associated registers, however, switch command/address signals to the memory chips independent of the chip select signals.

Abstract: The present invention relates to a memory arrangement having a controller and having at least one memory device. Data signals, control signals and address signals can be transferred between the controller and the memory device. The memory arrangement is designed in such a way that the data signals can be transferred via data signal lines between the controller and the memory device. The memory arrangement is furthermore designed in such a way that the control signals and the address signals can likewise be transferred via the data signal lines between the controller and the memory device.

Abstract: In a first embodiment, the invention provides a memory module having an electronic printed circuit board and a plurality of semiconductor chips of the same type that are mounted on at least one outer face of the printed circuit board. The printed circuit board has a connector strip, which runs at a first edge of the at least one outer face in a first direction and has a multiplicity of electrical contacts that are lined up in the first direction. The printed circuit board extends in the first direction between two opposite second edges. At least nine of the semiconductor chips of the same type are respectively mounted next to one another on the outer face of the printed circuit board between the center of the printed circuit board and the respective second edge of the printed circuit board. The semiconductor chips of the same type respectively have a smaller dimension and, in the direction perpendicular to the smaller dimension, a larger dimension that is larger than the smaller dimension.

Abstract: A memory module comprises a printed circuit board with a main surface bounded by a first side and a second side, the first side being longer than the second side, a first and a second generally rectangular memory device each having a long side and a short side, the first and second memory devices positioned on the main surface of the printed circuit board in such a way that the first memory device long side is generally parallel to the printed circuit board first side and the second memory device long side is generally perpendicular to the printed circuit board first side, and a first set of passive components connected to the first memory device and a second set of passive components connected to the second memory device, the first and second sets of passive components positioned on the main surface of the printed circuit board between the first memory device and interconnection pads.

Abstract: A circuit board arrangement includes a heat dissipater. A cooling body is arranged near a first circuit board and a second circuit board. Both circuit boards have electronic devices on two major surfaces. The cooling body is arranged between the electronic devices on one surface of the first circuit board and the electronic devices on one surface of the second circuit board. The circuit boards are supported by fixing elements of the cooling body.

Abstract: A semiconductor memory module (1) includes a circuit substrate (2), a first (100), a second (200), a third (300) and a fourth (400) rank of memory chips (3), a first register (10) and a second register (20). The first register (10) and the second register (20) each comprise a first input (11, 21) for receiving a respective chip select signal (CS0, CS2), a second input (12, 22) for receiving a respective other chip select signal (CS1, CS3) at least one third input (13, 23) for receiving command/address signals (CA), and at least one third output (16, 26).

Abstract: A memory system, in particular a buffered memory system, e.g. a fully buffered memory system, a method for operating a memory system, and a device for use with a memory system is disclosed. In one embodiment, the memory system includes at least one buffered memory module, and a device for generating a first and second chip select signal from one single chip select signal. Further, a device for use with a memory system is provided, generating a second number of chip select signals from a first number of chip select signals, the first number of chip select signals being smaller, than the second number of chip select signals.

Abstract: A memory extension memory module, a memory module system, and a memory module is disclosed. The memory module including at least one memory device and a connector for connecting the memory module to a computer system, wherein the memory module additionally includes a surface-mounted connector for connecting a memory extension memory module to the memory module. Furthermore, a method for manufacturing a memory module is disclosed. The memory module including at least one memory device and at least one connector for connecting a memory extension memory module to the memory module, wherein the at least one memory device and the at least one connector are connected to the memory module in a single manufacturing process.

Abstract: A memory module includes a first printed circuit board, wherein some of the memory chips in each of first and second ranks of memory chips are assembled on one side of the printed circuit board and others of the first and second ranks are assembled on the other side of the printed circuit board. First and second registers are respectively connected to the first and second address buses for respectively addressing the first and second ranks of memory chips. Since the addresses buses are separate for the two ranks, it is possible to activate only the address bus associated with the particular rank being addressed. In this manner, address activation power is saved by not activating the address bus of the other rank which is not addressed. Due to less power dissipation, it is possible to operate the memory module without a full DIMM heat spreader.

Abstract: A chip stack employing BGA or FBGA integrated circuit chip packages is provided. Two chip packages have bottom surfaces attached with sets of electrical contacts, which are oriented towards each other and are electrically connected to conductive patterns formed within the same flex substrate. One set contacts a conductive pattern on a top surface, the other set contacts a pattern on a bottom surface of the flex substrate within a same end portion. The other end portion has a conductive pattern, and is connected to a third set of electrical contacts. The flex substrate is wrapped around an edge of the chip package to connect the third set with the other two sets. Thereby, four chip packages are provided with this design, the layout of conductive traces formed within at least one of the flex substrates is meandered to compensate for length differences with respect to the other flex substrate.

Abstract: Pre-switching of output signals of a register within a registered memory module is described herein. The register receives a plurality of signals at respective input terminals, and the register stores the input signals in response to transitions of a clock signal. The register further includes output terminals on which the stored input signals are present as high or low level output signals. The high and low level output signals of the output terminals are applied to a plurality of memory devices. The high and low level output signals, which are present on the output terminals, are pre-switched to intermediate level signals having a signal height greater than that of the low level output signal and less than that of the high level output signal. The pre-switching occurs between following transitions of the clock signal determined for storing the input signals.

Abstract: A memory module includes a first pc-board with a plurality of memory chips assembled thereon and with a second pc-board with a second plurality of memory chips assembled thereon. The first pc-board and the second pc-board are connected via first and second connectors placed on the surfaces of the first and second pc-boards.

Abstract: The invention refers to a Memory Rank Decoder for a Multi-Rank Dual Inline Memory Module (DIMM) having a predetermined number of DRAM memory chips mounted on a printer circuit board (PCB), wherein each DRAM memory chip comprises a predetermined number of stacked DRAM memory dies which are selectable by a memory rank selection signal (r), wherein the memory rank decoder generates the memory rank selection signal (r) in response to external selection signals applied to the dual inline module (DIMM).

Abstract: A semiconductor memory module (1) includes a circuit substrate (2), a first (100), a second (200), a third (300) and a fourth (400) rank of memory chips (3), a first register (10) and a second register (20). The first register (10) and the second register (20) each comprise a first input (11, 21) for receiving a respective chip select signal (CS0, CS2), a second input (12, 22) for receiving a respective other chip select signal (CS1, CS3) at least one third input (13, 23) for receiving command/address signals (CA), and at least one third output (16, 26).

Abstract: A circuit board arrangement includes a heat dissipater. A cooling body is arranged near a first circuit board and a second circuit board. Both circuit boards have electronic devices on two major surfaces. The cooling body is arranged between the electronic devices on one surface of the first circuit board and the electronic devices on one surface of the second circuit board. The circuit boards are supported by fixing elements of the cooling body.

Abstract: A semiconductor product includes a first semiconductor chip that includes input/output circuitry enabling transfer of data from memory banks of the semiconductor product to an external electronic device and/or from an external electronic device to the memory banks of the semiconductor product. A number of second semiconductor chips are stacked on and electrically coupled to the first semiconductor chip. The second semiconductor chips are stacked on one another. Each second semiconductor chip of the plurality of second semiconductor chips comprises at least one of the memory banks of the semiconductor product. The memory banks of the second semiconductor chips are accessible by the input/output circuitry arranged on the first semiconductor chip.

Abstract: In a first embodiment, the invention provides a memory module having an electronic printed circuit board and a plurality of semiconductor chips of the same type that are mounted on at least one outer face of the printed circuit board. The printed circuit board has a connector strip, which runs at a first edge of the at least one outer face in a first direction and has a multiplicity of electrical contacts that are lined up in the first direction. The printed circuit board extends in the first direction between two opposite second edges. At least nine of the semiconductor chips of the same type are respectively mounted next to one another on the outer face of the printed circuit board between the center of the printed circuit board and the respective second edge of the printed circuit board. The semiconductor chips of the same type respectively have a smaller dimension and, in the direction perpendicular to the smaller dimension, a larger dimension that is larger than the smaller dimension.

Abstract: A stacked DRAM memory chip for a Dual In Line Memory Module (DIMM) is disclosed. According to one aspect, the DRAM memory chip comprises at least four stacked DRAM memory dies. Further, the memory dies are each selectable by a corresponding internal memory rank signal. Each memory die comprises an array of memory cells. A common internal address bus is provided for addressing the memory cells and is connected to all stacked DRAM memory dies. Internal data buses are provided for writing data into the memory cells and reading data out of the memory cells of the DRAM memory dies. An integrated redriving unit comprises buffers for all internal address lines provided for driving external address signals applied to address pads of the DRAM memory chip. A multiplexer/demultiplexer switches the internal data lines of the selected DRAM memory die. A memory rank decoder selects a corresponding memory die.

Abstract: A branched command/address bus architecture between a memory register and a plurality of memory units includes a main bus connected to the memory register. A first sub-bus is connected to the main bus and branches into a first number of memory unit buses, wherein each of them is connected to a command/address input of a memory unit associated with the same. A second sub-bus is also connected to the main bus and branches into a second number of memory unit buses, wherein each of them is connected to a command/address input of a memory unit associated with the same, wherein the second number is smaller than the first number. Further, the second sub-bus branches into a number of auxiliary buses, wherein the number of auxiliary buses corresponds to the difference between the first number and the second number, wherein each auxiliary bus is capacitively loaded corresponding to the memory unit buses and does not serve for driving a memory unit.

Abstract: A semiconductor memory module (1) includes a circuit substrate (2), a first (100), a second (200), a third (300) and a fourth (400) rank of memory chips (3), a first register (10) and a second register (20). The first register (10) and the second register (20) each comprise a first input (11, 21) for receiving a respective chip select signal (CS0, CS2), a second input (12, 22) for receiving a respective other chip select signal (CS1, CS3) at least one third input (13, 23) for receiving command/address signals (CA), and at least one third output (16, 26).