Patents by Inventor Stanislav Polonsky
Stanislav Polonsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8641879Abstract: A technique for controlling the motion of one or more charged entities linked to a polymer through a nanochannel is provided. A first reservoir and a second reservoir are connected by the nanochannel. An array of electrodes is positioned along the nanochannel, where fluid fills the first reservoir, the second reservoir, and the nanochannel. A first electrode is in the first reservoir and a second electrode is in the second reservoir. The first and second electrodes are configured to direct the one or more charged entities linked to the polymer into the nanochannel. An array of electrodes is configured to trap the one or more charged entities in the nanochannel responsive to being controlled for trapping. The array of electrodes is configured to move the one or more charged entities along the nanochannel responsive to being controlled for moving.Type: GrantFiled: September 12, 2012Date of Patent: February 4, 2014Assignee: International Business Machines CorporationInventors: Stefan Harrer, Binquan Luan, Glenn J. Martyna, Hongbo Peng, Stanislav Polonsky, Stephen M. Rossnagel, Ajay K. Royyuru, Gustavo A. Stolovitzky, George F. Walker
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Publication number: 20140001149Abstract: For a cross slit structure that contains a nanopore, a layer is produced including a first spacer that penetrates through the layer. A subsequent layer over, and in direct contact with, the layer is also produced. The subsequent layer includes a second spacer penetrating through the subsequent layer. The first spacer and the second spacer are selectively etched away, creating a first slit and a second slit. Respective projections of these slits are crossing one another at an angle. At such a crossing an opening is formed which provides for fluid connectivity through the two layers.Type: ApplicationFiled: June 28, 2012Publication date: January 2, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Jingwei Bai, Stefan Harrer, Stanislav Polonsky, Stephen M. Rossnagel
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Publication number: 20140004300Abstract: For a cross slit structure that contains a nanopore, a layer is produced including a first spacer that penetrates through the layer. A subsequent layer over, and in direct contact with, the layer is also produced. The subsequent layer includes a second spacer penetrating through the subsequent layer. The first spacer and the second spacer are selectively etched away, creating a first slit and a second slit. Respective projections of these slits are crossing one another at an angle. At such a crossing an opening is formed which provides for fluid connectivity through the two layers.Type: ApplicationFiled: July 23, 2012Publication date: January 2, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Jingwei Bai, Stefan Harrer, Stanislav Polonsky, Stephen M. Rossnagel
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Patent number: 8618581Abstract: A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.Type: GrantFiled: February 3, 2012Date of Patent: December 31, 2013Assignee: International Business Machines CorporationInventors: Hongbo Peng, Stanislav Polonsky, Stephen M. Rossnagel, Gustavo Alejandro Stolovitzky
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Patent number: 8598018Abstract: The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The conductive layer is partially oxidized by an oxygen plasma process to convert a portion thereof to an oxide layer thereby forming the electrode. The oxide layer is free of surface defects and the thickness of the oxide layer is from about 0.09 nm to about 10 nm and ranges therebetween, controllable with 0.2 nm precision.Type: GrantFiled: June 22, 2010Date of Patent: December 3, 2013Assignee: International Business Machines CorporationInventors: Ali Afzali-Azdakani, Shafaat Ahmed, Hariklia Deligianni, Dario L. Goldfarb, Stefan Harrer, Hongbo Peng, Stanislav Polonsky, Stephen Rossnagel, Xiaoyan Shao, Gustavo A. Stolovitzky
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Publication number: 20130288417Abstract: Semiconductor devices having integrated nanochannels confined by nanometer spaced electrodes, and VLSI (very large scale integration) planar fabrication methods for making the devices. A semiconductor device includes a bulk substrate and a first metal layer formed on the bulk substrate, wherein the first metal layer comprises a first electrode. A nanochannel is formed over the first metal layer, and extends in a longitudinal direction in parallel with a plane of the bulk substrate. A second metal layer is formed over the nanochannel, wherein the second metal layer comprises a second electrode. A top wall of the nanochannel is defined at least in part by a surface of the second electrode and a bottom wall of the nanochannel is defined by a surface of the first electrode.Type: ApplicationFiled: June 27, 2013Publication date: October 31, 2013Inventors: Stefan Harrer, Stanislav Polonsky, Mark B. Ketchen, John A. Ott
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Patent number: 8558326Abstract: Semiconductor devices having integrated nanochannels confined by nanometer spaced electrodes, and VLSI (very large scale integration) planar fabrication methods for making the devices. A semiconductor device includes a bulk substrate and a first metal layer formed on the bulk substrate, wherein the first metal layer comprises a first electrode. A nanochannel is formed over the first metal layer, and extends in a longitudinal direction in parallel with a plane of the bulk substrate. A second metal layer is formed over the nanochannel, wherein the second metal layer comprises a second electrode. A top wall of the nanochannel is defined at least in part by a surface of the second electrode and a bottom wall of the nanochannel is defined by a surface of the first electrode.Type: GrantFiled: March 27, 2012Date of Patent: October 15, 2013Assignee: International Business Machines CorporationInventors: Stefan Harrer, Stanislav Polonsky, Mark B. Ketchen, John A. Ott
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Patent number: 8557529Abstract: A nanopore capture system may include a material configured to pass through a nanopore device in a controlled manner based upon its interaction with the nanopore device. The system may also include a capture mechanism connected to one end of the material. The capture mechanism may be configured to catch a particular type of molecule while ignoring other types of molecules. The system may also include a controller to manipulate and/or detect the particular type of molecule.Type: GrantFiled: April 9, 2010Date of Patent: October 15, 2013Assignee: International Business Machines CorporationInventors: Stanislav Polonsky, Ali Afzali-Ardakani, Hongbo Peng, Gustavo A. Stolovitzky, Ajay A. Royyuru, Mark N. Wegman
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Patent number: 8438903Abstract: Semiconductor devices, chromatography devices and integrated circuits for detecting one or more molecules and methods for forming a semiconductor device for detecting one or more molecules are presented. For example, a semiconductor device for detecting one or more molecules includes a channel formed within a semiconductor structure, and at least one detector formed within the semiconductor structure. The at least one detector detects the one or more molecules in the channel. The semiconductor device may optionally comprise one or more additional channels formed within the semiconductor structure. The semiconductor device may, for example, be operative to detect a single molecule.Type: GrantFiled: January 27, 2010Date of Patent: May 14, 2013Assignee: International Business Machines CorporationInventors: Stanislav Polonsky, Frank Suits
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Patent number: 8407632Abstract: A method, system, and computer usable program product for detecting dose and focus variations during photolithography are provided in the illustrative embodiments. A test shape is formed on a wafer, the wafer being used to manufacture integrated circuits, the test shape being formed using a dose value and a focus value that are predetermined for the manufacturing. A capacitance of the test shape is measured. The capacitance is resolved to a second dosing value and a second focus value using an extraction model. A difference between the dosing value and the second dosing value is computed. A recommendation is made for dosing adjustment in the manufacturing based on the difference.Type: GrantFiled: September 14, 2010Date of Patent: March 26, 2013Assignee: International Business Machines CorporationInventors: Ibrahim M. Elfadel, Ying Liu, Stanislav Polonsky, Amith Singhee
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Publication number: 20130068618Abstract: A technique for controlling the motion of one or more charged entities linked to a polymer through a nanochannel is provided. A first reservoir and a second reservoir are connected by the nanochannel. An array of electrodes is positioned along the nanochannel, where fluid fills the first reservoir, the second reservoir, and the nanochannel. A first electrode is in the first reservoir and a second electrode is in the second reservoir. The first and second electrodes are configured to direct the one or more charged entities linked to the polymer into the nanochannel. An array of electrodes is configured to trap the one or more charged entities in the nanochannel responsive to being controlled for trapping. The array of electrodes is configured to move the one or more charged entities along the nanochannel responsive to being controlled for moving.Type: ApplicationFiled: September 12, 2012Publication date: March 21, 2013Applicant: International Business Machines CorporationInventors: Stefan Harrer, Binquan Luan, Glenn J. Martyna, Hongbo Peng, Stanislav Polonsky, Stephen M. Rossnagel, Ajay K. Royyuru, Gustavo A. Stolovitzky, George F. Walker
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Publication number: 20130068617Abstract: A technique for controlling the motion of one or more charged entities linked to a polymer through a nanochannel is provided. A first reservoir and a second reservoir are connected by the nanochannel. An array of electrodes is positioned along the nanochannel, where fluid fills the first reservoir, the second reservoir, and the nanochannel. A first electrode is in the first reservoir and a second electrode is in the second reservoir. The first and second electrodes are configured to direct the one or more charged entities linked to the polymer into the nanochannel. An array of electrodes is configured to trap the one or more charged entities in the nanochannel responsive to being controlled for trapping. The array of electrodes is configured to move the one or more charged entities along the nanochannel responsive to being controlled for moving.Type: ApplicationFiled: September 16, 2011Publication date: March 21, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Stefan Harrer, Binquan Luan, Glenn J. Martyna, Hongbo Peng, Stanislav Polonsky, Stephen M. Rossnagel, Ajay K. Royyuru, Gustavo A. Stolovitzky, George F. Walker
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Publication number: 20130043131Abstract: A molecule trapping method includes forming a fluid bridge between a first reservoir and a second reservoir, translocating a molecule from the first reservoir to the second reservoir through the fluid bridge, detecting when a segment of the molecule is in the fluid bridge, breaking the fluid bridge and forming an a gap between the first and the second reservoirs, thereby trapping a segment of the molecule in the gap and making measurements on the segment of the molecule.Type: ApplicationFiled: August 15, 2011Publication date: February 21, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Venkat S.K. Balagurusamy, Stanislav Polonsky
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Patent number: 8354336Abstract: Accordingly, the present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A substrate which has a conductive layer disposed thereon is provided and the conductive layer has an oxide layer with an exposed surface. The exposed surface of the oxide layer contacts a solution of an organic surface active compound in an organic solvent to form a protective layer of the organic surface active compound over the oxide layer. The protective layer has a thickness of from about 0.5 nm to about 5 nm and ranges therebetween depending on a chemical structure of the surface active compound.Type: GrantFiled: June 22, 2010Date of Patent: January 15, 2013Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Shafaat Ahmed, Hariklia Deligianni, Dario L. Goldfarb, Stefan Harrer, Binquan Luan, Glenn J. Martyna, Hongbo Peng, Stanislav Polonsky, Stephen Rossnagel, Xiaoyan Shao, Gustavo A. Stolovitzky
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Publication number: 20120256281Abstract: Semiconductor devices having integrated nanochannels confined by nanometer spaced electrodes, and VLSI (very large scale integration) planar fabrication methods for making the devices. A semiconductor device includes a bulk substrate and a first metal layer formed on the bulk substrate, wherein the first metal layer comprises a first electrode. A nanochannel is formed over the first metal layer, and extends in a longitudinal direction in parallel with a plane of the bulk substrate. A second metal layer is formed over the nanochannel, wherein the second metal layer comprises a second electrode. A top wall of the nanochannel is defined at least in part by a surface of the second electrode and a bottom wall of the nanochannel is defined by a surface of the first electrode.Type: ApplicationFiled: March 27, 2012Publication date: October 11, 2012Applicant: International Business Machines CorporationInventors: Stefan Harrer, Stanislav Polonsky, Mark B. Ketchen, John A. Ott
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Publication number: 20120199483Abstract: A nanopore capture system may include a material configured to pass through a nanopore device in a controlled manner based upon its interaction with the nanopore device. The system may also include a capture mechanism connected to one end of the material. The capture mechanism may be configured to catch a particular type of molecule while ignoring other types of molecules. The system may also include a controller to manipulate and/or detect the particular type of molecule.Type: ApplicationFiled: April 21, 2012Publication date: August 9, 2012Applicant: International Business Machines CorporationInventors: Stanislav Polonsky, Ali Afzali-Ardakani, Hongbo Peng, Gustavo A. Stolovitzky, Ajay A. Royyuru, Mark N. Wegman
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Publication number: 20120132886Abstract: A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.Type: ApplicationFiled: February 3, 2012Publication date: May 31, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hongbo Peng, Stanislav Polonsky, Stephen Rossnagel, Gustavo Alejandro Stolovitzky
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Patent number: 8189931Abstract: A method and system are disclosed for matching input character sequences in a set of input patterns. The method comprises the steps of analyzing the set of input patterns, creating a pattern cluster look-up table (PCLT) based on said input patterns, and defining an offset value k. The PCLT is used to find, for each sequence s and offset k, a set of candidate patterns that can possibly match s, the set of candidate patterns is searched for patterns that match s, and all found matching patterns and sequences are reported.Type: GrantFiled: January 4, 2008Date of Patent: May 29, 2012Assignee: International Business Machines CorporationInventors: Tien Huynh, Stanislav Polonsky, Isidore Rigoutsos
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Publication number: 20120065765Abstract: A method, system, and computer usable program product for detecting dose and focus variations during photolithography are provided in the illustrative embodiments. A test shape is formed on a wafer, the wafer being used to manufacture integrated circuits, the test shape being formed using a dose value and a focus value that are predetermined for the manufacturing. A capacitance of the test shape is measured. The capacitance is resolved to a second dosing value and a second focus value using an extraction model. A difference between the dosing value and the second dosing value is computed. A recommendation is made for dosing adjustment in the manufacturing based on the difference.Type: ApplicationFiled: September 14, 2010Publication date: March 15, 2012Applicant: International Business Machines CorporationInventors: IBRAHIM M. ELFADEL, Ying Liu, Stanislav Polonsky, Amith Singhee
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Constructing variability maps by correlating off-state leakage emission images to layout information
Patent number: 8131056Abstract: Improved techniques are disclosed for monitoring or sensing process variations in integrated circuit designs. Such techniques provide such improvements by constructing variability maps correlating leakage emission images to layout information. By way of example, a method for monitoring one or more manufacturing process variations associated with a device under test (e.g., integrated circuit) comprises the following steps. An emission image representing an energy emission associated with a leakage current of the device under test is obtained. The emission image is correlated with a layout of the device under test to form a cross emission image. Common structures on the cross emission image are selected and identified as regions of interest. One or more variability measures (e.g., figures of merit) are calculated based on the energy emissions associated with the regions of interest.Type: GrantFiled: September 30, 2008Date of Patent: March 6, 2012Assignee: International Business Machines CorporationInventors: Stanislav Polonsky, Peilin Song, Franco Stellari, Alan J. Weger