Patents by Inventor Stefan Uhlenbrock

Stefan Uhlenbrock has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120184781
    Abstract: A method of forming a tellurium alkoxide includes providing a tellurium halide and a non-tellurium alkoxide in a liquid organic solvent. The liquid organic solvent has less moles of alcohol, if any, than moles of tellurium halide in the liquid organic solvent. The tellurium halide and the non-tellurium alkoxide within the liquid organic solvent are reacted to form a reaction product halide and a tellurium alkoxide. The liquid organic solvent is removed from the reaction product halide and the tellurium alkoxide to leave a liquid and/or solid mixture comprising the reaction product halide and the tellurium alkoxide. The mixture is heated effective to gasify the tellurium alkoxide from the reaction product halide. Other implementations are disclosed, including methods of forming a mixed halide-alkoxide of tellurium.
    Type: Application
    Filed: March 27, 2012
    Publication date: July 19, 2012
    Applicant: MICRON TECHNOLOGY, INC.
    Inventor: Stefan Uhlenbrock
  • Patent number: 8148580
    Abstract: A method of forming a tellurium alkoxide includes providing a tellurium halide and a non-tellurium alkoxide in a liquid organic solvent. The liquid organic solvent has less moles of alcohol, if any, than moles of tellurium halide in the liquid organic solvent. The tellurium halide and the non-tellurium alkoxide within the liquid organic solvent are reacted to form a reaction product halide and a tellurium alkoxide. The liquid organic solvent is removed from the reaction product halide and the tellurium alkoxide to leave a liquid and/or solid mixture comprising the reaction product halide and the tellurium alkoxide. The mixture is heated effective to gasify the tellurium alkoxide from the reaction product halide. Other implementations are disclosed, including methods of forming a mixed halide-alkoxide of tellurium.
    Type: Grant
    Filed: April 15, 2009
    Date of Patent: April 3, 2012
    Assignee: Micron Technology, Inc.
    Inventor: Stefan Uhlenbrock
  • Publication number: 20110071316
    Abstract: The present invention provides metal-containing compounds that include at least one ?-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical ?-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one ?-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for ?-diketiminate ligands are also provided.
    Type: Application
    Filed: November 24, 2010
    Publication date: March 24, 2011
    Applicant: Micron Technology, Inc.
    Inventors: Dan Millward, Stefan Uhlenbrock, Timothy A. Quick
  • Patent number: 7858523
    Abstract: The present invention provides metal-containing compounds that include at least one ?-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical ?-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one ?-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for ?-diketiminate ligands are also provided.
    Type: Grant
    Filed: July 10, 2009
    Date of Patent: December 28, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Dan Millward, Stefan Uhlenbrock, Timothy A. Quick
  • Patent number: 7837797
    Abstract: A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more precursor compounds that include niobium and/or vanadium and using an atomic layer deposition process including a plurality of deposition cycles.
    Type: Grant
    Filed: January 12, 2009
    Date of Patent: November 23, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Garo J. Derderian, Donald L. Westmoreland, Stefan Uhlenbrock
  • Publication number: 20100267998
    Abstract: A method of forming a tellurium alkoxide includes providing a tellurium halide and a non-tellurium alkoxide in a liquid organic solvent. The liquid organic solvent has less moles of alcohol, if any, than moles of tellurium halide in the liquid organic solvent. The tellurium halide and the non-tellurium alkoxide within the liquid organic solvent are reacted to form a reaction product halide and a tellurium alkoxide. The liquid organic solvent is removed from the reaction product halide and the tellurium alkoxide to leave a liquid and/or solid mixture comprising the reaction product halide and the tellurium alkoxide. The mixture is heated effective to gasify the tellurium alkoxide from the reaction product halide. Other implementations are disclosed, including methods of forming a mixed halide-alkoxide of tellurium.
    Type: Application
    Filed: April 15, 2009
    Publication date: October 21, 2010
    Inventor: Stefan Uhlenbrock
  • Publication number: 20100267195
    Abstract: A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.
    Type: Application
    Filed: April 15, 2009
    Publication date: October 21, 2010
    Inventors: Eugene P. Marsh, Timothy A. Quick, Stefan Uhlenbrock
  • Publication number: 20100075037
    Abstract: Some embodiments include deposition systems configured for reclaiming unreacted precursor with one or more traps provided downstream of a reaction chamber. Some of the deposition systems may utilize two or more traps that are connected in parallel relative to one another and configured so that the traps may be alternately utilized for trapping precursor and releasing trapped precursor back into the reaction chamber. Some of the deposition systems may be configured for ALD, and some may be configured for CVD.
    Type: Application
    Filed: September 22, 2008
    Publication date: March 25, 2010
    Inventors: Eugene P. Marsh, Tim Quick, Stefan Uhlenbrock, Brenda Kraus
  • Publication number: 20090275199
    Abstract: The present invention provides metal-containing compounds that include at least one ?-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical ?-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one ?-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for ?-diketiminate ligands are also provided.
    Type: Application
    Filed: July 10, 2009
    Publication date: November 5, 2009
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Dan Millward, Stefan Uhlenbrock, Timothy A. Quick
  • Patent number: 7572731
    Abstract: The present invention provides metal-containing compounds that include at least one ?-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical ?-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one ?-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for ?-diketiminate ligands are also provided.
    Type: Grant
    Filed: June 28, 2005
    Date of Patent: August 11, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Dan Millward, Stefan Uhlenbrock, Timothy A. Quick
  • Publication number: 20090127105
    Abstract: A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more precursor compounds that include niobium and/or vanadium and using an atomic layer deposition process including a plurality of deposition cycles.
    Type: Application
    Filed: January 12, 2009
    Publication date: May 21, 2009
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Garo J. Derderian, Donald L. Westmoreland, Stefan Uhlenbrock
  • Patent number: 7482037
    Abstract: A method of forming a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more precursor compounds that include niobium and/or vanadium and using an atomic layer deposition process including a plurality of deposition cycles.
    Type: Grant
    Filed: August 20, 2004
    Date of Patent: January 27, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Garo J. Derderian, Donald L. Westmoreland, Stefan Uhlenbrock
  • Publication number: 20080214001
    Abstract: The present invention provides metal-containing compounds that include at least one ?-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical ?-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one ?-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for ?-diketiminate ligands are also provided.
    Type: Application
    Filed: June 28, 2005
    Publication date: September 4, 2008
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Dan Millward, Stefan Uhlenbrock, Timothy Quick
  • Publication number: 20080210157
    Abstract: A method of forming (and system for forming) layers, such as calcium, barium, strontium, and/or magnesium, tantalates and/or niobates, and optionally titanates, on a substrate by employing a vapor deposition method, particularly a multi-cycle atomic layer deposition process.
    Type: Application
    Filed: September 14, 2006
    Publication date: September 4, 2008
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Brian Vaartstra, Stefan Uhlenbrock
  • Patent number: 7393785
    Abstract: A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.
    Type: Grant
    Filed: April 25, 2007
    Date of Patent: July 1, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Stefan Uhlenbrock, Eugene P. Marsh
  • Publication number: 20070197031
    Abstract: A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.
    Type: Application
    Filed: April 25, 2007
    Publication date: August 23, 2007
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Stefan Uhlenbrock, Eugene Marsh
  • Patent number: 7250367
    Abstract: An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhibits a chemisorption affinity that exceeds the chemisorption affinity exhibited by a gas reactive ligand. Another deposition method includes exposing a substrate to a precursor containing an amino and/or imino ligand and a halide ligand and depositing a layer. The precursor exhibits a volatility that exceeds the volatility with a halide ligand taking the place of each amino and/or imino ligand. The precursor exhibits a thermal stability that exceeds the thermal stability with an amino and/or imino ligand taking the place of each halide ligand. The layer may exhibit less halogen content than with a halide ligand taking the place of each amino and/or imino ligand.
    Type: Grant
    Filed: September 1, 2004
    Date of Patent: July 31, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Brian A. Vaartstra, Donald Westmoreland, Eugene P. Marsh, Stefan Uhlenbrock
  • Patent number: 7226861
    Abstract: A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.
    Type: Grant
    Filed: January 9, 2004
    Date of Patent: June 5, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Stefan Uhlenbrock, Eugene P. Marsh
  • Publication number: 20070006798
    Abstract: A method of forming (and system for forming) layers, such as calcium, barium, strontium, and/or magnesium, tantalates and/or niobates, and optionally titanates, on a substrate by employing a vapor deposition method, particularly a multi-cycle atomic layer deposition process.
    Type: Application
    Filed: September 14, 2006
    Publication date: January 11, 2007
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Brian Vaartstra, Stefan Uhlenbrock
  • Publication number: 20060292873
    Abstract: The present invention provides metal-containing compounds that include at least one ?-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical ?-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one ?-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for ?-diketiminate ligands are also provided.
    Type: Application
    Filed: June 28, 2005
    Publication date: December 28, 2006
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Dan Millward, Stefan Uhlenbrock, Timothy Quick