Abstract: A method for the formation of rhodium films with good step coverage is disclosed. Rhodium films are formed by a low temperature atomic layer deposition technique using a first gas of rhodium group metal precursor followed by an oxygen exposure. The invention provides, therefore, a method for forming smooth and continuous rhodium films which also have good step coverage and a reduced carbon content.

Abstract: The present invention provides methods and systems for the electrolytic removal of platinum and/or other of the Group 8-11 metals from substrates.

Abstract: A method of forming (and apparatus for forming) a layer, such as a strontium titanate, barium titanate, or barium-strontium titanate layer, on a substrate by employing a vapor deposition method, particularly a multi-cycle atomic layer deposition process.

Abstract: A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.

Abstract: The present invention provides methods of performing atomic layer deposition to form conductive, oxidation-resistant rhodium oxide films and films comprising metals, such as platinum, alloyed with rhodium oxide. The present invention also provides memory devices and processors comprising films deposited by the above methods.

Abstract: In one aspect, the invention encompasses a semiconductor processing method of forming a metal-comprising layer over a substrate. A substrate is provided within a reaction chamber, and a source of a metal-comprising precursor is provided external to the reaction chamber. The metal-comprising precursor comprises a metal coordinated with at least one Lewis base to form a complex having a stoichiometric ratio of the at least one Lewis base to the metal. An amount of the at least one Lewis base is distributed within the source to an amount that is in excess of the stoichiometric ratio. At least some of the metal-comprising precursor is transported from the source to the reaction chamber. A metal is deposited from the metal-comprising precursor and onto the substrate within the reaction chamber. In another aspect, the invention encompasses a method of storing a metal-comprising material. A metal-comprising material is dispersed within a solution.

Abstract: A method for the formation of rhodium films with good step coverage is disclosed. Rhodium films are formed by a low temperature atomic layer deposition technique using a first gas of rhodium group metal precursor followed by an oxygen exposure. The invention provides, therefore, a method for forming smooth and continuous rhodium films which also have good step coverage and a reduced carbon content.

Abstract: The present invention provides methods for the preparation of compounds of the formula (Formula I):

Abstract: Systems and methods for large scale synthesis of germanium selenide glass and germanium selenide glass compounds are provided. Up to about 750 grams of a germanium selenide glass or a glass compound can be synthesized at a time in about eight hours or less. Stoichiometrically proportional amounts of germanium and selenium are placed in an ampoule. A variable may also be placed in the ampoule. The ampoule is heated to above the softening temperature of the glass or glass compound being synthesized. The ampoule is then rocked for a period of time while the temperature is held constant. The temperature of the ampoule is then brought down to above the softening temperature of the glass or glass compound being synthesized and then quenched.

Abstract: A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further provided for making a vaporized ruthenium precursor for use in the chemical vapor deposition of ruthenium and ruthenium-containing materials onto substrates, wherein a ruthenium precursor formulation having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound is vaporized.

Abstract: In one aspect, the invention encompasses a semiconductor processing method of forming a metal-comprising layer over a substrate. A substrate is provided within a reaction chamber, and a source of a metal-comprising precursor is provided external to the reaction chamber. The metal-comprising precursor comprises a metal coordinated with at least one Lewis base to form a complex having a stoichiometric ratio of the at least one Lewis base to the metal. An amount of the at least one Lewis base is distributed within the source to an amount that is in excess of the stoichiometric ratio.. At least some of the metal-comprising precursor is transported from the source to the reaction chamber. A metal is deposited from the metal-comprising precursor and onto the substrate within the reaction chamber. In another aspect, the invention encompasses a method of storing a metal-comprising material. A metal-comprising material is dispersed within a solution.

Abstract: A planarization method includes providing a second and/or third row Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes an oxidizing agent.

Abstract: A planarization method includes providing a second and/or third Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes an oxidizing gas.

Abstract: The present invention provides methods for the preparation of compounds of the formula (Formula I): LyM(CO)z wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5. These methods involve the reaction of Ru3(CO)12 or Os3(CO)12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure.

Abstract: A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further provided for making a vaporized ruthenium precursor for use in the chemical vapor deposition of ruthenium and ruthenium-containing materials onto substrates, wherein a ruthenium precursor formulation having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound is vaporized.

Abstract: A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further provided for making a vaporized ruthenium precursor for use in the chemical vapor deposition of ruthenium and ruthenium-containing materials onto substrates, wherein a ruthenium precursor formulation having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound is vaporized.

Abstract: A method for the formation of rhodium films with good step coverage is disclosed. Rhodium films are formed by a low temperature atomic layer deposition technique using a first gas of rhodium group metal precursor followed by an oxygen exposure. The invention provides, therefore, a method for forming smooth and continuous rhodium films which also have good step coverage and a reduced carbon content.

Abstract: A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further provided for making a vaporized ruthenium precursor for use in the chemical vapor deposition of ruthenium and ruthenium-containing materials onto substrates, wherein a ruthenium precursor formulation having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound is vaporized.

Abstract: A method for the formation of rhodium films with good step coverage is disclosed. Rhodium films are formed by a low temperature atomic layer deposition technique using a first gas of rhodium group metal precursor followed by an oxygen exposure. The invention provides, therefore, a method for forming smooth and continuous rhodium films which also have good step coverage and a reduced carbon content.

Abstract: In one aspect, the invention encompasses a semiconductor processing method of forming a metal-comprising layer over a substrate. A substrate is provided within a reaction chamber, and a source of a metal-comprising precursor is provided external to the reaction chamber. The metal-comprising precursor comprises a metal coordinated with at least one Lewis base to form a complex having a stoichiometric ratio of the at least one Lewis base to the metal. An amount of the at least one Lewis base is distributed within the source to an amount that is in excess of the stoichiometric ratio. At least some of the metal-comprising precursor is transported from the source to the reaction chamber. A metal is deposited from the metal-comprising precursor and onto the substrate within the reaction chamber. In another aspect, the invention encompasses a method of storing a metal-comprising material. A metal-comprising material is dispersed within a solution.