Abstract: One embodiment of the present invention provides a pharmaceutical composition for nasal administration, which includes zolpidem, a prodrug thereof, a pharmaceutically acceptable salt thereof, or a combination thereof, and a pharmaceutically acceptable nasal carrier in liquid form. Another embodiment of the present invention provides a method for inducing sleep, which includes nasally administering to a subject in need thereof a pharmaceutical composition, which includes zolpidem, a prodrug thereof, a pharmaceutically acceptable salt thereof, or a combination thereof, and a pharmaceutically acceptable nasal carrier in liquid form.

Abstract: A conditioner including abrasive elements for conditioning a polishing pad to be used in abrasive semiconductor substrate treatment processes, such as chemical-mechanical polishing or chemical-mechanical planarization processes. The abrasive elements are formed from a material that may be degraded or dissolved by at least one chemical that will not substantially degrade or dissolve a material of the polishing pad. The abrasive elements of the conditioner may be degraded or dissolved in at least one chemical that will not substantially degrade or dissolve a material of the polishing pad. Any residue or particles of, or from, the abrasive elements that stick to or become embedded in the polishing pad are removed therefrom by exposing the polishing pad to the at least one chemical so as to degrade or dissolve the residue or particles without substantially degrading or dissolving a material of the polishing pad.

Abstract: Methods and apparatuses for planarizing a microelectronic substrate. In one aspect of the invention, a first portion of an energy-sensitive, non-sacrificial planarizing pad material is exposed to a selected energy without exposing a second portion of the material to the selected energy source. The planarizing pad material is exposed to a solvent to remove material from one of the first or second portions of the planarizing pad material at a faster rate than removing material from the other of the first and second portions. The process forms a plurality of recesses directly in the surface of the planarizing pad which are configured to support a planarizing liquid proximate to the surface of the planarizing pad material during planarization of the microelectronic substrate. Alternatively, the process can form a mold having protrusions that are pressed into the planarizing pad to define the recesses in the pad.

Abstract: Methods and devices for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals.

Abstract: A method and apparatus for planarizing a microelectronic substrate. The apparatus can include a planarizing medium having a relatively hard polishing pad and a planarizing liquid disposed on a generally non-porous planarizing surface of the polishing pad. The planarizing liquid can include a colloidal suspension of colloidal particles having generally smooth external surfaces. The colloidal particles can have a variety of shapes, including a spherical shape, a cylindrical shape, a cubic shape, and a hexagonal shape, among others. The colloidal particles can be formed from a variety of materials, including silicon dioxide, manganese oxide, and cerium oxide.

Abstract: Methods and devices for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals.

Abstract: Methods and apparatuses for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals. The measured drag force can be used to generate a plot of work versus time.

Abstract: The present invention relates to a method for treatment of attention deficit disorder by administering certain 5-HT1A receptor agonists

Abstract: Foamed thermoplastic polymeric mechanical planarization polishing pads (“MP pads”) made with supercritical fluids are presented. A supercritical fluid foaming agent is dissolved in a thermoplastic polymer. A rapid change in the solubility and volume of the supercritical fluid foaming agent in the thermoplastic polymer results in foaming of the thermoplastic polymer. Foamed thermoplastic polymeric MP pads are advantageously both significantly and uniformly porous.

Abstract: Bioactive gepirone metabolites, such as 3-OH gepirone (4,4,dethyl-3-hydroxy-1-[4-[4-(2-pyrimidinyl)-1-piperazinyl]butyl]-2,6-piperidinedione), and their pharmaceutically acceptable salts and hydrates, can be used to alleviate psychological disorders or the symptoms thereof. The use of these compounds provides advantages over other therapeutic azapirones as they possess superior bioavailability, faster onset of action, and more stable plasma levels when administered to a mammal.

Abstract: Methods and devices for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals.

Abstract: A method and apparatus for planarizing a microelectronic substrate. The apparatus can include a planarizing medium having a relatively hard polishing pad and a planarizing liquid disposed on a generally non-porous planarizing surface of the polishing pad. The planarizing liquid can include a colloidal suspension of colloidal particles having generally smooth external surfaces. The colloidal particles can have a variety of shapes, including a spherical shape, a cylindrical shape, a cubic shape, and a hexagonal shape, among others. The colloidal particles can be formed from a variety of materials, including silicon dioxide, manganese oxide, and cerium oxide.

Abstract: Improved methods, compositions and structures formed therefrom are provided that allow for reduction of roughness in layers (e.g., oxide layers) of a planarized wafer. In one such embodiment, improved methods, compositions and structures formed therefrom for reduction of roughness in layers (e.g., oxide layers) of a planarized wafer are used in conjunction with high modulus polyurethane pads. In one embodiment, improved methods, compositions and structures formed therefrom are provided that reduce rough interlayer dielectric (ILD) conditions for a wafer during CMP processing of such a wafer. Embodiments of a method for forming a microelectronic substrate include mixing a surfactant at least 100 parts per million (ppm) to slurries to form a polishing solution.

Abstract: Methods and apparatuses for planarizing a microelectronic substrate. In one aspect of the invention, a first portion of an energy-sensitive, non-sacrificial planarizing pad material is exposed to a selected energy without exposing a second portion of the material to the selected energy source. The planarizing pad material is exposed to a solvent to remove material from one of the first or second portions of the planarizing pad material at a faster rate than removing material from the other of the first and second portions. The process forms a plurality of recesses directly in the surface of the planarizing pad which are configured to support a planarizing liquid proximate to the surface of the planarizing pad material during planarization of the microelectronic substrate. Alternatively, the process can form a mold having protrusions that are pressed into the planarizing pad to define the recesses in the pad.

Abstract: A method and apparatus for planarizing a microelectronic substrate. The apparatus can include a planarizing medium having a relatively hard polishing pad and a planarizing liquid disposed on a generally non-porous planarizing surface of the polishing pad. The planarizing liquid can include a colloidal suspension of colloidal particles having generally smooth external surfaces. The colloidal particles can have a variety of shapes, including a spherical shape, a cylindrical shape, a cubic shape, and a hexagonal shape, among others. The colloidal particles can be formed from a variety of materials, including silicon dioxide, manganese oxide, and cerium oxide.

Abstract: Methods and devices for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals.

Abstract: Methods and devices for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals.

Abstract: A conditioner including abrasive elements for conditioning a polishing pad to be used in abrasive semiconductor substrate treatment processes, such as chemical-mechanical polishing or chemical-mechanical planarization processes. The abrasive elements are formed from a material that may be degraded or dissolved by at least one chemical that will not substantially degrade or dissolve a material of the polishing pad. The abrasive elements of the conditioner may be degraded or dissolved in at least one chemical that will not substantially degrade or dissolve a material of the polishing pad. Any residue or particles of, or from, the abrasive elements that stick to or become embedded in the polishing pad are removed therefrom by exposing the polishing pad to the at least one chemical so as to degrade or dissolve the residue or particles without substantially degrading or dissolving a material of the polishing pad.

Abstract: Methods and devices for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals.

Abstract: Bioactive gepirone metabolites, such as 3-OH gepirone (4,4,-dimethyl-3-hydroxy-1-[4-[4-(2-pyrimidinyl)-1-piperazinyl]butyl]-2,6-piperidinedione), and their pharmaceutically acceptable salts and hydrates, can be used to alleviate psychological disorders or the symptoms thereof. The use of these compounds provides advantages over other therapeutic azapirones as they possess superior bioavailability, faster onset of action, and more stable plasma levels when administered to a mammal.