Abstract: An operating method of a controller that controls a memory device includes initializing a clock frequency set corresponding to clock signals provided to a plurality of operation modules included in the controller when a change in a current performance or a change in a host request pattern is detected, determining a target performance on the basis of the current performance given after the clock frequency set is initialized, determining an optimal clock frequency set, in which the current performance is able to be maintained equal to or greater than the target performance, by repeatedly performing an operation of changing at least one clock frequency included in the clock frequency set and an operation of monitoring the current performance given after the clock frequency is changed, and providing the plurality of operation modules with clock signals according to the optimal clock frequency set.

Abstract: Embodiments of the present disclosure relate to a memory system and an operating method thereof. According to the embodiments of the present disclosure, the memory system may include a plurality of cores, a control core, and a shared memory. When processing the event, the control core may select a first core executing a target job requiring distributed execution among the plurality of cores, and the first core may run a first firmware among the plurality of firmwares to execute the target job. The control core may select a second core to execute the target job together with the first core, and may control the second core to run the first firmware. The control core may control the first core and the second core to perform distributed execution of the target job.

Abstract: A semiconductor device according to an embodiment may include a plurality of light emitting structures, a first electrode disposed around the plurality of light emitting structures, a second electrode disposed on an upper surface of the plurality of light emitting structures, a first bonding pad electrically connected to the first electrode, and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures may include a first light emitting structure that includes a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer; and a second light emitting structure that includes a third DBR layer of the first conductivity type, a second active layer disposed on the third DBR layer, and a fourth DBR layer of the second conductivity type disposed on the second active layer.

Abstract: Electronic devices are disclosed. In some implementations, an electronic device includes a device interface to provide an interface to a host and detect link information associated with a bandwidth provided by the device interface in communicating with the host, a processor coupled to the device interface to be in communication with the host, and structured to be operable to control operations of the electronic device in response to a request received from the host through the device interface, and a clock generator coupled to provide the device interface and the processor with clock signals to be used to operate the device interface and the processor. The processor is configured to adjust frequencies of the clock signals based on the link information.

Abstract: Disclosed are a controller and an operating method thereof. According to an embodiment of the present disclosure, a controller that controls a memory device, comprises: a host interface for determining a remaining resource index and outputting a task scheduling instruction when a data throughput determined based on data inputted/outputted between a host and the controller is lower than a maximum throughput required under a current workload pattern; and a processor for: selecting, in response to the task scheduling instruction, at least one of a plurality of internal tasks based on the remaining resource index and resource consumption indexes of the respective internal tasks, and performing the selected internal task while performing an input/output task.

Abstract: A semiconductor device comprises a substrate and a plurality of emitters disposed on the substrate. The emitter may comprise: a first conductive reflection layer having a first reflectivity; an active layer disposed on the first conductive reflection layer; an aperture layer disposed on the active layer and comprising an aperture region and a blocking region surrounding the aperture region; and a second conductive reflection layer disposed on the aperture layer and having a second reflectivity smaller than the first reflectivity. A diameter-to-pitch ratio of the aperture region of the aperture layer is 1:3 to 1:5, wherein the pitch may be defined as the distance between centers of aperture regions of aperture layers of adjacent emitters.

Abstract: An operating method of a controller that controls a memory device includes initializing a clock frequency set corresponding to clock signals provided to a plurality of operation modules included in the controller when a change in a current performance or a change in a host request pattern is detected, determining a target performance on the basis of the current performance given after the clock frequency set is initialized, determining an optimal clock frequency set, in which the current performance is able to be maintained equal to or greater than the target performance, by repeatedly performing an operation of changing at least one clock frequency included in the clock frequency set and an operation of monitoring the current performance given after the clock frequency is changed, and providing the plurality of operation modules with clock signals according to the optimal clock frequency set.

Abstract: An electronic device includes a plurality of cores, and a clock generator configured to provide a plurality of clock signals to the plurality of cores, respectively, wherein the plurality of cores includes a system core that controls the clock generator to generate the clock signals having frequencies of the respective cores, wherein the frequencies are optimized and determined based on a type of an event of the electronic device, and wherein to clock signals with optimized frequencies are applied to the respective cores in order to perform the event.

Abstract: Embodiments of the present disclosure relate to a memory system and an operating method thereof. According to the embodiments of the present disclosure, the memory system may include a plurality of cores, a control core and a shared memory, and the control core may, when processing the event, select a first core executing a target job requiring distributed execution among the plurality of cores—the first core runs a first firmware among the plurality of firmwares to execute the target job—may select a second core executing the target job together with the first core, may control the second core to run the first firmware, and may control the first core and the second core to perform distributed execution of the target job.

Abstract: An electronic device includes a plurality of cores, and a clock generator configured to provide a plurality of clock signals to the plurality of cores, respectively, wherein the plurality of cores includes a system core that controls the clock generator to generate the clock signals having frequencies of the respective cores, wherein the frequencies are optimized and determined based on a type of an event of the electronic device, and wherein to clock signals with optimized frequencies are applied to the respective cores in order to perform the event.

Abstract: Electronic devices are disclosed. In some implementations, an electronic device includes a device interface to provide an interface to a host and detect link information associated with a bandwidth provided by the device interface in communicating with the host, a processor coupled to the device interface to be in communication with the host, and structured to be operable to control operations of the electronic device in response to a request received from the host through the device interface, and a clock generator coupled to provide the device interface and the processor with clock signals to be used to operate the device interface and the processor. The processor is configured to adjust frequencies of the clock signals based on the link information.

Abstract: One embodiment discloses a semiconductor device comprising: a semiconductor structure, which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, and comprises a plurality of first recesses arranged up to a partial area of the first conductive semiconductor layer by penetrating the second conductive semiconductor layer and the active layer, and a second recess arranged between the plurality of first recesses; a plurality of first electrodes arranged inside the plurality of first recesses, and electrically connected with the first conductive semiconductor layer; a plurality of second electrodes electrically connected to the second conductive semiconductor layer; and a reflective layer arranged inside the second recess, wherein the sum of the area of the plurality of first recesses and the area of the second recess is 60% or less of the maximum area i

Abstract: One embodiment discloses a semiconductor device comprising: a semiconductor structure, which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, and comprises a plurality of first recesses arranged up to a partial area of the first conductive semiconductor layer by penetrating the second conductive semiconductor layer and the active layer, and a second recess arranged between the plurality of first recesses; a plurality of first electrodes arranged inside the plurality of first recesses, and electrically connected with the first conductive semiconductor layer; a plurality of second electrodes electrically connected to the second conductive semiconductor layer; and a reflective layer arranged inside the second recess, wherein the sum of the area of the plurality of first recesses and the area of the second recess is 60% or less of the maximum area i

Abstract: A light emitting device can include a sapphire substrate; a first conductivity type semiconductor layer disposed on the sapphire substrate; an active layer disposed on the first conductivity type semiconductor layer; a plurality of p-type conductors disposed on the active layer, and separated from each other; a first pad disposed on the first conductivity type semiconductor layer; and a second pad disposed on the plurality of p-type conductors, in which the plurality of p-type conductors are arranged in a first direction, the second pad is spaced apart from the first pad in a second direction, the second direction is perpendicular to the first direction, each of the plurality of p-type conductors has a first width in the first direction and a second width in the second direction, the first width being less than the second width, the plurality of p-type conductors are evenly spaced apart by a first distance in the first direction, and the first distance being less than the first width of each of the plurality

Abstract: A laser diode according to an embodiment may include a substrate, a plurality of light emitting structures disposed on the substrate and including a first reflective layer and a second reflective layer, a first electrode electrically connected with the first reflective layer of the light emitting structure, a second electrode electrically connected with the second reflective layer of the light emitting structure, a first insulating layer disposed on the first electrode, a first bonding pad electrically connected with the first electrode and disposed on the substrate, and a second bonding pad electrically connected with the second electrode and disposed on the substrate.

Abstract: An embodiment relates to a light emitting device comprise a second electrode which includes indium tin oxide (ITO), an ohmic characteristic between a second semiconductor layer and the second electrode is improved and a driving voltage is also improved. An embodiment relates to a light emitting device comprise a capping layer that can overlap the second semiconductor layer with the second electrode interposed therebetween and include a material of which a difference in thermal expansion coefficient with the second semiconductor layer is 3 or less. Therefore, since the capping layer is electrically connected to the second electrode, delamination and lifting of an interface between the second electrode and the second semiconductor layer is prevented, and reliability of the light emitting device is improved.

Abstract: A semiconductor device comprises a substrate and a plurality of emitters disposed on the substrate. The emitter may comprise: a first conductive reflection layer having a first reflectivity; an active layer disposed on the first conductive reflection layer; an aperture layer disposed on the active layer and comprising an aperture region and a blocking region surrounding the aperture region; and a second conductive reflection layer disposed on the aperture layer and having a second reflectivity smaller than the first reflectivity. A diameter-to-pitch ratio of the aperture region of the aperture layer is 1:3 to 1:5, wherein the pitch may be defined as the distance between centers of aperture regions of aperture layers of adjacent emitters.

Abstract: An embodiment discloses a semiconductor element comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; and an electron blocking layer arranged between the second conducive semiconductor layer and the active layer, wherein the section of the first conductive semiconductor layer decreases in a first direction, the electron blocking layer has an area in which the section thereof increases in the first direction, and the first direction is defined from the first conductive semiconductor layer to the second conductive semiconductor layer.

Abstract: An embodiment provides a light emitting element comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a plurality of conductor layers selectively arranged on the second conductive semiconductor layer; and a reflective electrode disposed on the conductor layers and the second conductive semiconductor layer.

Abstract: An embodiment provides a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses passing through the second conductive semiconductor layer and the active layer and extending to a portion of the first conductive semiconductor layer; a plurality of first electrodes disposed inside the plurality of recesses and electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, wherein a ratio of a first area of where the plurality of first electrodes are in contact with the first conductive semiconductor layer and a second area of where the second electrode is in contact with the second conductive semiconductor layer (first area:second area) ranges from 1:3 to 1:10.