Patents by Inventor Su Ik Park
Su Ik Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200194970Abstract: A laser diode according to an embodiment may include a substrate, a plurality of light emitting structures disposed on the substrate and including a first reflective layer and a second reflective layer, a first electrode electrically connected with the first reflective layer of the light emitting structure, a second electrode electrically connected with the second reflective layer of the light emitting structure, a first insulating layer disposed on the first electrode, a first bonding pad electrically connected with the first electrode and disposed on the substrate, and a second bonding pad electrically connected with the second electrode and disposed on the substrate.Type: ApplicationFiled: May 18, 2018Publication date: June 18, 2020Applicant: LG INNOTEK CO., LTD.Inventors: Su Ik PARK, Keon Hwa LEE, Yong Gyeong LEE
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Patent number: 10636939Abstract: One embodiment provides a semiconductor device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer and also comprises first and second recesses which pass through the active layer from the second conductive semiconductor layer and extend to the first conductive semiconductor layer; a first electrode coming into contact with the first conductive semiconductor layer from the first recess; a second electrode coming into contact with the second conductive semiconductor layer; and a reflective layer formed in the second recess, wherein the second recess has an open lower part disposed on the downside of the second conductive semiconductor layer, an upper part disposed on the first conductive semiconductor layer, and a side part extending from the lower part to the upper part, and the reflective layer comprises a reflection part disposed inside the second recess and an extension part extending from the lower partType: GrantFiled: June 9, 2017Date of Patent: April 28, 2020Assignee: LG INNOTEK CO., LTD.Inventors: Su Ik Park, Youn Joon Sung, Yong Gyeong Lee, Min Sung Kim
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Publication number: 20190386189Abstract: A semiconductor device according to an embodiment may include a plurality of light emitting structures, a first electrode disposed around the plurality of light emitting structures, a second electrode disposed on an upper surface of the plurality of light emitting structures, a first bonding pad electrically connected to the first electrode, and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures may include a first light emitting structure that includes a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer; and a second light emitting structure that includes a third DBR layer of the first conductivity type, a second active layer disposed on the third DBR layer, and a fourth DBR layer of the second conductivity type disposed on the second active layer.Type: ApplicationFiled: January 25, 2018Publication date: December 19, 2019Applicant: LG INNOTEK CO., LTD.Inventors: Keon Hwa LEE, Su Ik PARK, Yong Gyeong LEE, Baek Jun KIM, Myung Sub KIM
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Patent number: 10497834Abstract: A light-emitting device according to the present invention comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a second electrode layer coupled to the second conductive semiconductor layer at the bottom of the light-emitting structure; and a plurality of first electrode layers coupled to the first conductive semiconductor layer through penetration of the light-emitting structure at preset intervals.Type: GrantFiled: June 30, 2016Date of Patent: December 3, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Youn Joon Sung, Su Ik Park
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Patent number: 10490702Abstract: Embodiments disclose a light-emitting device including a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a first recess and a second recess passing through the second conductive semiconductor layer and the active layer and disposed up to a partial region of the first conductive semiconductor layer, a connection electrode disposed inside the first recess and electrically connected to the first conductive semiconductor layer, a reflective layer disposed inside the second recess, and an insulation layer configured to electrically insulate the reflective layer and the light-emitting structure, and a light-emitting device package including the same.Type: GrantFiled: August 25, 2016Date of Patent: November 26, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Su Ik Park, Min Sung Kim, Youn Joon Sung, Yong Gyeong Lee, Kwang Yong Choi
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Publication number: 20190305184Abstract: A light emitting device can include a sapphire substrate; a first conductivity type semiconductor layer disposed on the sapphire substrate; an active layer disposed on the first conductivity type semiconductor layer; a plurality of p-type conductors disposed on the active layer, and separated from each other; a first pad disposed on the first conductivity type semiconductor layer; and a second pad disposed on the plurality of p-type conductors, in which the plurality of p-type conductors are arranged in a first direction, the second pad is spaced apart from the first pad in a second direction, the second direction is perpendicular to the first direction, each of the plurality of p-type conductors has a first width in the first direction and a second width in the second direction, the first width being less than the second width, the plurality of p-type conductors are evenly spaced apart by a first distance in the first direction, and the first distance being less than the first width of each of the pluralityType: ApplicationFiled: June 18, 2019Publication date: October 3, 2019Applicant: LG INNOTEK CO., LTD.Inventors: Yong Gyeong LEE, Min Sung KIM, Su Ik PARK, Youn Joon SUNG, Kwang Yong CHOI
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Publication number: 20190280158Abstract: An embodiment discloses a semiconductor element comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; and an electron blocking layer arranged between the second conducive semiconductor layer and the active layer, wherein the section of the first conductive semiconductor layer decreases in a first direction, the electron blocking layer has an area in which the section thereof increases in the first direction, and the first direction is defined from the first conductive semiconductor layer to the second conductive semiconductor layer.Type: ApplicationFiled: November 24, 2017Publication date: September 12, 2019Inventors: Youn Joon SUNG, Yong Gyeong LEE, Min Sung KIM, Su Ik PARK
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Patent number: 10333029Abstract: An embodiment relates to a light-emitting element capable of reducing the driving voltage and improving the optical output, comprising: a support substrate; a light-emitting structure which is arranged on the support substrate, and which comprises a first semiconductor layer, an active layer, and a second semiconductor layer; a plurality of connection grooves comprising bottom surfaces, which expose the second semiconductor layer through removal of the light-emitting structure, and side surfaces, which expose the first semiconductor layer, the active layer, and the second semiconductor layer; a first electrode arranged on the light-emitting structure so as to contact the first semiconductor layer, the first electrode comprising a first electrode pattern, which has ends extending to the peripheries of the connection grooves, and a second electrode pattern, which is arranged on the first electrode pattern; a contact electrode extending to the upper surface of the first semiconductor layer so as to surround theType: GrantFiled: April 22, 2016Date of Patent: June 25, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Youn Joon Sung, Ji Hyung Moon, Su Ik Park
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Publication number: 20190181300Abstract: An embodiment provides a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses passing through the second conductive semiconductor layer and the active layer and extending to a portion of the first conductive semiconductor layer; a plurality of first electrodes disposed inside the plurality of recesses and electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, wherein a ratio of a first area of where the plurality of first electrodes are in contact with the first conductive semiconductor layer and a second area of where the second electrode is in contact with the second conductive semiconductor layer (first area:second area) ranges from 1:3 to 1:10.Type: ApplicationFiled: June 20, 2017Publication date: June 13, 2019Inventors: Su Ik PARK, Youn Joon SUNG, Min Sung KIM, Yong Gyeong LEE, Eun Dk LEE
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Publication number: 20190157504Abstract: One embodiment provides a semiconductor device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer and also comprises first and second recesses which pass through the active layer from the second conductive semiconductor layer and extend to the first conductive semiconductor layer; a first electrode coming into contact with the first conductive semiconductor layer from the first recess; a second electrode coming into contact with the second conductive semiconductor layer; and a reflective layer formed in the second recess, wherein the second recess has an open lower part disposed on the downside of the second conductive semiconductor layer, an upper part disposed on the first conductive semiconductor layer, and a side part extending from the lower part to the upper part, and the reflective layer comprises a reflection part disposed inside the second recess and an extension part extending from the lower partType: ApplicationFiled: June 9, 2017Publication date: May 23, 2019Applicant: LG INNOTEK CO., LTD.Inventors: Su IK PARK, Youn Joon SUNG, Yong Gyeong LEE, Min Sung KIM
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Patent number: 10263154Abstract: An embodiment relates to a light-emitting device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and comprises a plurality of first recesses passing through the second conductive semiconductor layer and active layer and disposed on a part of an area of the first conductive semiconductor layer; a first electrode which is electrically connected to the first conductive semiconductor layer inside the plurality of first recesses; a conductive support substrate which is electrically connected to the first electrode; a second electrode which is electrically connected to the second conductive semiconductor layer; and an insulating layer which is disposed between the conductive support substrate and second conductive semiconductor layer, wherein a second recess passes through the first conductive semiconductoType: GrantFiled: August 25, 2016Date of Patent: April 16, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Su Ik Park, Min Sung Kim, Youn Joon Sung, Yong Gyeong Lee, Kwang Yong Choi
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Publication number: 20190088822Abstract: An embodiment of the present invention relates to a light emitting device capable of enhancing ohmic characteristics of a semiconductor layer and an electrode and simultaneously improving driving voltage, comprising: a support substrate; a light emitting structure which is disposed on the support substrate and comprises a first semiconductor layer, a second semiconductor layer and an active layer disposed between the first semiconductor layer and the second semiconductor layer; at least one groove which exposes the first semiconductor layer through the second semiconductor layer and the active layer; a first electrode which is disposed between the light emitting structure and the support substrate and electrically connected to the exposed first semiconductor layer; a second electrode which comprises ITO and contacts the second semiconductor layer; and a capping layer which is electrically connected, between the first electrode and the light emitting structure, to the second electrode, wherein the capping layeType: ApplicationFiled: March 8, 2017Publication date: March 21, 2019Inventors: Kwang Yong CHOI, Min Sung KIM, Su Ik PARK, Youn Joon SUNG, Yong Gyeong LEE
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Patent number: 10236417Abstract: An embodiment relates to a light-emitting element that easily dissipates heat through a pad and has a uniform heat distribution, the light-emitting element including a light-emitting structure that includes a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode that is formed on one side of the light-emitting structure and includes a plurality of contact parts electrically connected with the first semiconductor layer; a second electrode formed on the one side of the light-emitting structure and electrically connected with the second semiconductor layer; a first pad connected with the first electrode; and a second pad spaced apart from the first pad and connected with the second electrode, wherein the plurality of contact parts are arranged on the first and second pads.Type: GrantFiled: March 31, 2016Date of Patent: March 19, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Woo Sik Lim, Min Sung Kim, Eun Woo Ro, Su Ik Park, Youn Joon Sung, Kwang Yong Choi
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Publication number: 20180226541Abstract: An embodiment provides a light emitting element comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a plurality of conductor layers selectively arranged on the second conductive semiconductor layer; and a reflective electrode disposed on the conductor layers and the second conductive semiconductor layer.Type: ApplicationFiled: July 29, 2016Publication date: August 9, 2018Applicant: LG INNOTEK CO., LTD.Inventors: Yong Gyeong LEE, Min Sung KIM, Su Ik PARK, Youn Joon SUNG, Kwang Yong CHOI
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Publication number: 20180226542Abstract: An embodiment relates to a light-emitting device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and comprises a plurality of first recesses passing through the second conductive semiconductor layer and active layer and disposed on a part of an area of the first conductive semiconductor layer; a first electrode which is electrically connected to the first conductive semiconductor layer inside the plurality of first recesses; a conductive support substrate which is electrically connected to the first electrode; a second electrode which is electrically connected to the second conductive semiconductor layer; and an insulating layer which is disposed between the conductive support substrate and second conductive semiconductor layer, wherein a second recess passes through the first conductive semiconductoType: ApplicationFiled: August 25, 2016Publication date: August 9, 2018Inventors: Su Ik PARK, Min Sung KIM, Youn Joon SUNG, Yong Gyeong LEE, Kwang Yong CHOI
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Publication number: 20180219133Abstract: Embodiments disclose a light-emitting device including a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a first recess and a second recess passing through the second conductive semiconductor layer and the active layer and disposed up to a partial region of the first conductive semiconductor layer, a connection electrode disposed inside the first recess and electrically connected to the first conductive semiconductor layer, a reflective layer disposed inside the second recess, and an insulation layer configured to electrically insulate the reflective layer and the light-emitting structure, and a light-emitting device package including the same.Type: ApplicationFiled: August 25, 2016Publication date: August 2, 2018Inventors: Su Ik PARK, Min Sung KIM, Youn Joon SUNG, Yong Gyeong LEE, Kwang Yong CHOI
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Publication number: 20180190870Abstract: A light-emitting device according to the present invention comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a second electrode layer coupled to the second conductive semiconductor layer at the bottom of the light-emitting structure; and a plurality of first electrode layers coupled to the first conductive semiconductor layer through penetration of the light-emitting structure at preset intervals.Type: ApplicationFiled: June 30, 2016Publication date: July 5, 2018Applicant: LG INNOTEK CO., LTD.Inventors: Youn Joon SUNG, Su Ik PARK
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Publication number: 20180138366Abstract: An embodiment relates to a light-emitting element capable of reducing the driving voltage and improving the optical output, comprising: a support substrate; a light-emitting structure which is arranged on the support substrate, and which comprises a first semiconductor layer, an active layer, and a second semiconductor layer; a plurality of connection grooves comprising bottom surfaces, which expose the second semiconductor layer through removal of the light-emitting structure, and side surfaces, which expose the first semiconductor layer, the active layer, and the second semiconductor layer; a first electrode arranged on the light-emitting structure so as to contact the first semiconductor layer, the first electrode comprising a first electrode pattern, which has ends extending to the peripheries of the connection grooves, and a second electrode pattern, which is arranged on the first electrode pattern; a contact electrode extending to the upper surface of the first semiconductor layer so as to surround theType: ApplicationFiled: April 22, 2016Publication date: May 17, 2018Applicant: LG INNOTEK CO., LTD.Inventors: Youn Joon SUNG, Ji Hyung MOON, Su Ik PARK
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Publication number: 20180083165Abstract: An embodiment relates to a light-emitting element that easily dissipates heat through a pad and has a uniform heat distribution, the light-emitting element including a light-emitting structure that includes a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode that is formed on one side of the light-emitting structure and includes a plurality of contact parts electrically connected with the first semiconductor layer; a second electrode formed on the one side of the light-emitting structure and electrically connected with the second semiconductor layer; a first pad connected with the first electrode; and a second pad spaced apart from the first pad and connected with the second electrode, wherein the plurality of contact parts are arranged on the first and second pads.Type: ApplicationFiled: March 31, 2016Publication date: March 22, 2018Applicant: LG INNOTEK CO., LTD.Inventors: Woo Sik LIM, Min Sung KIM, Eun Woo RO, Su Ik PARK, Youn Joon SUNG, Kwang Yong CHOI
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Publication number: 20160271903Abstract: A warm knitted fabric includes a fibrous cotton-shaped moxa particle pad, an upper knitted fabric layer and a lower knitted fabric layer. The upper knitted fabric layer is disposed on top of the fibrous cotton-shaped moxa particle pad. The lower knitted fabric layer disposed on underside of the fibrous cotton-shaped moxa particle pad and has the same size or design as the upper knitted fabric layer. The fibrous cotton-shaped moxa particle pad spreads out between the upper and lower knitted fabric layer to predetermined size and volume. The upper knitted fabric layer, the fibrous cotton-shaped moxa particle pad, and the lower knitted fabric layer are sewn to each other at predetermined sewing intervals.Type: ApplicationFiled: March 17, 2015Publication date: September 22, 2016Inventor: SU IK PARK