Abstract: Disclosed herein are a video decoding method and apparatus and a video encoding method and apparatus. In video encoding and decoding, multiple partition blocks are generated by splitting a target block. A prediction mode is derived for at least a part of the multiple partition blocks, among the multiple partition blocks, and prediction is performed on the multiple partition blocks based on the derived prediction mode. When prediction is performed on the partition blocks, information related to the target block may be used, and information related to an additional partition block, which is predicted prior to the partition block, may be used.

Abstract: Disclosed in the present invention is a floating hologram system. The floating hologram system includes a diffuser configured to form a projection image using light beams transmitted from an image transmitter and diffuse the formed image, and a holographic optical element on which the image diffused from the diffuser is incident and which generates a virtual image floating at a position a predetermined distance therefrom and has a convex lens characteristic. A distance between the diffuser and the holographic optical element is determined based on a focal length of the holographic optical element and a distance from the holographic optical element to the virtual image.

Abstract: A compound is represented by Formula 1 below: wherein R1 to R4 are each independently a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a fluoro-substituted alkyl group having 1 to 6 carbon atoms, or a fluorine atom, wherein at least one among R1 to R4 is a fluorine atom, A is a divalent linking group, M1 and M2 are each independently potassium or sodium, and n and m are each independently an integer of 1 to 10.

Abstract: A magnetic memory device including a lower electrode on a substrate; a conductive line on the lower electrode; and a magnetic tunnel junction pattern on the conductive line, wherein the conductive line includes a first conductive line adjacent to the magnetic tunnel junction pattern; a second conductive line between the lower electrode and the first conductive line; and a high resistance layer at least partially between the first conductive line and the second conductive line, a resistivity of the second conductive line is lower than a resistivity of the first conductive line, and a resistivity of the high resistance layer is higher than the resistivity of the first conductive line and higher than the resistivity of the second conductive line.

Abstract: A magnetic tunnel junction device includes a pinned magnetic layer, a free magnetic layer, and a tunnel barrier layer between the pinned and free magnetic layers. The free magnetic layer includes a first free layer, a second free layer spaced apart from the tunnel barrier layer with the first free layer therebetween, and a spacer layer between the first free layer and the second free layer. The first free layer and the second free layer are antiferromagnetically coupled to each other by the spacer layer, and each of the first free layer and the second free layer has a magnetization direction substantially perpendicular to an interface between the free magnetic layer and the tunnel barrier layer. A thermal stability of the free magnetic layer is in a range of 0 to 15.

Abstract: A fuel cell catalyst including a conductive carrier and core-shell nanoparticles supported on the carrier. The core includes platinum and a transition metal and the shell includes a secondary metal. An electrochemical specific activity measured at a voltage of 0.05 V to 1.05 V (vs. RHE) in a potential range, at a scan rate of 5 mV/s and a rotation rate of 1,600 rpm in an O2-saturated 0.1 M HClO4 electrolyte solution is 0.3 mA/cm2 to 0.6 mA/cm2, and a mass activity is 0.05 mA/?g to 0.08 mA/?g.

Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.

Abstract: A magnetic memory device includes a first cell array structure including first and second free magnetic patterns which extend in a first direction parallel to a top surface of a substrate and are spaced apart from each other in a second direction intersecting the first direction, and a second cell array structure including a third free magnetic pattern between the first and second free magnetic patterns and a fourth free magnetic pattern spaced apart from the third free magnetic pattern with the second free magnetic pattern therebetween. The first cell array structure further includes a first transistor region including first transistors connected to the first and second free magnetic patterns. The second cell array structure further includes a second transistor region including second transistors connected to the third and fourth free magnetic patterns. The second transistor region is spaced apart from the first transistor region in the first direction.

Abstract: The polymer electrolyte membrane includes: a first ion conductive polymer layer; and a second ion conductive polymer layer disposed on at least one surface of the first ion conductive polymer layer, wherein the first ion conductive polymer layer comprises a first ion conductive polymer comprising a sulfonic acid group, wherein the second ion conductive polymer layer comprises a second ion conductive polymer comprising a carboxylic acid group, and wherein a thickness of the second ion conductive polymer layer is in a range of 1% to 80% of a thickness of the polymer electrolyte membrane. Further, disclosed are the method for preparing the same, the membrane-electrode assembly including the same, and the fuel cell including the same.

Abstract: A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.

Abstract: A magnetic memory device includes a first magnetic memory cell extending in a first direction and including a first magnetic domain and a second magnetic domain arranged in the first direction, and a second magnetic memory cell extending in the first direction and including a third magnetic domain and a fourth magnetic domain arranged in the first direction. A magnetization direction of the first magnetic domain and a magnetization direction of the second magnetic domain are anti-parallel to each other. A magnetization direction of the third magnetic domain and a magnetization direction of the fourth magnetic domain are anti-parallel to each other. The third magnetic domain of the second magnetic memory cell is spaced apart from the second magnetic domain of the first magnetic memory cell in a second direction intersecting the first direction.

Abstract: A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.

Abstract: A magnetic memory device includes a first magnetic layer extending in a first direction, a pinned layer on the first magnetic layer, and a second magnetic layer vertically overlapping with the pinned layer with the first magnetic layer interposed between the pinned layer and the second magnetic layer. The first magnetic layer includes, a plurality of magnetic domains arranged in the first direction, and at least one magnetic domain wall between the plurality of magnetic domains, and a magnetization direction of the second magnetic layer is substantially parallel to a top surface of the first magnetic layer.

Abstract: A magnetic memory device includes a conductive line extending in a first direction, a bottom electrode provided on a portion of a bottom surface of the conductive line, a free layer and a pinned layer stacked on the conductive line, a spacer layer between the free layer and the pinned layer, and a top electrode provided on a portion of a top surface of the pinned layer. The conductive line, the free layer, the pinned layer and the spacer layer have side surfaces perpendicular to the first direction, and the side surfaces are aligned with each other.

Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.

Abstract: A magnetic memory device including a lower electrode on a substrate; a conductive line on the lower electrode; and a magnetic tunnel junction pattern on the conductive line, wherein the conductive line includes a first conductive line adjacent to the magnetic tunnel junction pattern; a second conductive line between the lower electrode and the first conductive line; and a high resistance layer at least partially between the first conductive line and the second conductive line, a resistivity of the second conductive line is lower than a resistivity of the first conductive line, and a resistivity of the high resistance layer is higher than the resistivity of the first conductive line and higher than the resistivity of the second conductive line.

Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.

Abstract: This application relates to a self-reference point setting type blood component measuring method and apparatus using light. In one aspect, the method includes applying light to a skin of a subject to be measured and setting a reference point on a surface of the skin adjacent to a point at which the light is applied. The method further includes calculating a concentration of a blood component from a light intensity measured at the reference point and a light intensity measured at another point. According to some embodiments, the accuracy and precision of measurement are increased in measuring blood in a non-invasive manner.

Abstract: An under-sampling apparatus for MR image reconstruction by using machine learning and a method thereof, an MR image reconstruction device by using machine learning and a method thereof, and a recoding medium thereof are disclosed. The disclosed under-smapling apparatus includes: a setting portion that sets a region corresponding to a center of the k-space image as a first region and remaining regions as a second region; and an under-sampling portion that full-samples the first region and under-samples the second region, wherein in the under-sampling performed in the second region, lines are selected at regular intervals and then only the selected line is full-sampled. According to the under-sampling apparatus, a high-resolution MR image can be acquired while reducing imaing time.

Abstract: Method for performing an erase program operation. Various methods include: erasing a block of cells by: applying a program pulse to a block of memory elements in the three-dimensional memory that programs the block of memory elements to a level below an erase verify level, where the three-dimensional memory comprises memory elements stacked vertically; performing a verify step to verify voltage levels of a group of memory elements; determining that a memory element of the group is outside of a threshold window defined between the erase verify level and a compact erase threshold amount; and applying a second program pulse to the memory element. Where erasing the block of memory elements creates an erased block, where a width of the voltage distribution of the erased memory elements in the erased block is the same as or below a width of a voltage distribution associated with programmed memory elements.