Abstract: Method for performing an erase program operation. Various methods include: erasing a block of cells by: applying a program pulse to a block of memory elements in the three-dimensional memory that programs the block of memory elements to a level below an erase verify level, where the three-dimensional memory comprises memory elements stacked vertically; performing a verify step to verify voltage levels of a group of memory elements; determining that a memory element of the group is outside of a threshold window defined between the erase verify level and a compact erase threshold amount; and applying a second program pulse to the memory element. Where erasing the block of memory elements creates an erased block, where a width of the voltage distribution of the erased memory elements in the erased block is the same as or below a width of a voltage distribution associated with programmed memory elements.

Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.

Abstract: A kiosk device for a motor vehicle includes an imaging unit, a voice input unit, a vehicle detecting unit configured to detect entry of a motor vehicle, a financial automation transaction unit including a touch interface unit, a control unit and a driving unit. When the entry of the motor vehicle is detected by the vehicle detecting unit, the control unit activates the imaging unit and the voice input unit and analyze motion information of a vehicle occupant imaged by the imaging unit or voice information of the vehicle occupant inputted through the voice input unit. The driving unit drives the financial automation transaction unit based on an analysis result of the motion information or the voice information so that the financial automation transaction unit is operated to face a direction of a vehicle occupant location.

Abstract: A support for a fuel cell includes a substrate including highly crystalline carbon, and a crystalline carbon layer on the substrate.

Abstract: A magnetic memory device includes a first cell array structure including first and second free magnetic patterns which extend in a first direction parallel to a top surface of a substrate and are spaced apart from each other in a second direction intersecting the first direction, and a second cell array structure including a third free magnetic pattern between the first and second free magnetic patterns and a fourth free magnetic pattern spaced apart from the third free magnetic pattern with the second free magnetic pattern therebetween. The first cell array structure further includes a first transistor region including first transistors connected to the first and second free magnetic patterns. The second cell array structure further includes a second transistor region including second transistors connected to the third and fourth free magnetic patterns. The second transistor region is spaced apart from the first transistor region in the first direction.

Abstract: A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.

Abstract: A magnetic memory device includes a conductive line extending in a first direction, a bottom electrode provided on a portion of a bottom surface of the conductive line, a free layer and a pinned layer stacked on the conductive line, a spacer layer between the free layer and the pinned layer, and a top electrode provided on a portion of a top surface of the pinned layer. The conductive line, the free layer, the pinned layer and the spacer layer have side surfaces perpendicular to the first direction, and the side surfaces are aligned with each other.

Abstract: Disclosed are a support for a fuel cell, a method of preparing the same, an electrode containing the same, a membrane-electrode assembly containing the same, and a fuel cell system containing the same. The electrode includes an electrode substrate and a catalyst layer on the electrode substrate, wherein the catalyst layer includes a catalyst and a binder resin. The catalyst includes a support and an active metal supported on the support. The support includes a carbon substrate and a graphitic layer covering a surface of the carbon substrate. The carbon substrate may be a carbon nanotube, a carbon nanowire, or a heat-treated carbon black, and the graphitic layer includes graphene sheets stacked together and has mesopore channels therein aligned with the graphene sheets. The active metal is supported on the graphitic layer.

Abstract: A magnetic memory device includes a substrate, a tunnel barrier pattern on the substrate, a first magnetic pattern and a second magnetic pattern spaced apart from each other with the tunnel barrier pattern therebetween, and a short preventing pattern spaced apart from the tunnel barrier pattern with the second magnetic pattern therebetween. The short preventing pattern includes at least two oxide layers and at least two metal layers, which are alternately stacked.

Abstract: Provided is an electrode catalyst for fuel cells. The electrode catalyst for fuel cells includes a core including an alloy of platinum, copper, and metal oxide and a shell including platinum or a platinum alloy material.

Abstract: A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern between the reference magnetic structure and the free magnetic structure. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first and the second pinned pattern. The second pinned pattern includes a first magnetic pattern adjacent the exchange coupling pattern, a second magnetic pattern adjacent the tunnel barrier pattern, a third magnetic pattern between the first and the second magnetic pattern, a first non-magnetic pattern between the first and the third magnetic pattern, and a second non-magnetic pattern between the second and the third magnetic pattern. The first non-magnetic pattern has a different crystal structure from the second non-magnetic pattern, and at least a portion of the third magnetic pattern is amorphous.

Abstract: The present invention relates to a pneumatic tire, and more particularly, to a pneumatic tire having an improved decoupling groove in a shoulder. The pneumatic tire including a tread (100), a sidewall (200), and a bead (300) includes one or more side ring decoupling grooves (400) formed along the circumference of the tire at an upper portion of the sidewall (200), and the side ring decoupling grooves (400) are formed in a direction parallel with the ground coming into contact with the tire while the tire runs.

Abstract: A magnetic memory device includes a substrate, a tunnel barrier pattern on the substrate, a first magnetic pattern and a second magnetic pattern spaced apart from each other with the tunnel barrier pattern therebetween, and a short preventing pattern spaced apart from the tunnel barrier pattern with the second magnetic pattern therebetween. The short preventing pattern includes at least two oxide layers and at least two metal layers, which are alternately stacked.

Abstract: Magnetic memory devices are provided. A magnetic memory device includes a first electrode on a substrate, a magnetic tunnel junction pattern including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer, which are sequentially stacked on the first electrode, and a second electrode on the magnetic tunnel junction pattern. A surface binding energy of the first electrode and/or the second electrode with respect to the magnetic tunnel junction pattern is relatively low.

Abstract: A kiosk device for a motor vehicle includes an imaging unit, a voice input unit, a vehicle detecting unit configured to detect entry of a motor vehicle, a financial automation transaction unit including a touch interface unit, a control unit and a driving unit. When the entry of the motor vehicle is detected by the vehicle detecting unit, the control unit activates the imaging unit and the voice input unit and analyze motion information of a vehicle occupant imaged by the imaging unit or voice information of the vehicle occupant inputted through the voice input unit. The driving unit drives the financial automation transaction unit based on an analysis result of the motion information or the voice information so that the financial automation transaction unit is operated to face a direction of a vehicle occupant location.

Abstract: An under-sampling apparatus for MR image reconstruction by using machine learning and a method thereof, an MR image reconstruction device by using machine learning and a method thereof, and a recoding medium thereof are disclosed. The disclosed under-smapling apparatus includes: a setting portion that sets a region corresponding to a center of the k-space image as a first region and remaining regions as a second region; and an under-sampling portion that full-samples the first region and under-samples the second region, wherein in the under-sampling performed in the second region, lines are selected at regular intervals and then only the selected line is full-sampled. According to the under-sampling apparatus, a high-resolution MR image can be acquired while reducing imaing time.

Abstract: A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern between the reference magnetic structure and the free magnetic structure. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first and the second pinned pattern. The second pinned pattern includes a first magnetic pattern adjacent the exchange coupling pattern, a second magnetic pattern adjacent the tunnel barrier pattern, a third magnetic pattern between the first and the second magnetic pattern, a first non-magnetic pattern between the first and the third magnetic pattern, and a second non-magnetic pattern between the second and the third magnetic pattern. The first non-magnetic pattern has a different crystal structure from the second non-magnetic pattern, and at least a portion of the third magnetic pattern is amorphous.

Abstract: Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.

Abstract: A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern between the reference magnetic structure and the free magnetic structure. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first and the second pinned pattern. The second pinned pattern includes a first magnetic pattern adjacent the exchange coupling pattern, a second magnetic pattern adjacent the tunnel barrier pattern, a third magnetic pattern between the first and the second magnetic pattern, a first non-magnetic pattern between the first and the third magnetic pattern, and a second non-magnetic pattern between the second and the third magnetic pattern. The first non-magnetic pattern has a different crystal structure from the second non-magnetic pattern, and at least a portion of the third magnetic pattern is amorphous.

Abstract: A resin composition for packaging, an insulating film and a printed circuit board manufactured with the resin composition, and a method of manufacturing a printed circuit board with the resin composition are provided. The resin composition for packaging includes an epoxy resin, and inorganic filler particles dispersed in the epoxy resin, and an aspect ratio of the inorganic filler particles is 1.0 or more and 3.0 or less.