Patents by Inventor Sung Chul Lee

Sung Chul Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MAGNETORESISTIVE ELEMENT AND MEMORY DEVICE INCLUDING THE SAME
    Publication number: 20140339660
    Abstract: Provided are magnetoresistive elements, memory devices including the same, and an operation methods thereof. A magnetoresistive element may include a free layer, and the free layer may include a plurality of regions (layers) having different properties. The free layer may include a plurality of regions (layers) having different Curie temperatures. The Curie temperature of the free layer may change regionally or gradually away from the pinned layer. The free layer may include a first region having ferromagnetic characteristics at a first temperature and a second region having paramagnetic characteristics at the first temperature. The first region and the second region both may have ferromagnetic characteristics at a second temperature lower than the first temperature. The effective thickness of the free layer may change with temperature.
    Type: Application
    Filed: April 7, 2014
    Publication date: November 20, 2014
    Inventors: Sung-chul LEE, Kwang-seok KIM, Kee-won KIM, Young-man JANG, Ung-hwan PI
  • ELECTRODE CATALYST FOR FUEL CELL, ELECTRODE FOR FUEL CELL INCLUDING THE ELECTRODE CATALYST, AND MEMBRANE ELECTRODE ASSEMBLY AND FUEL CELL INCLUDING THE SAME
    Publication number: 20140335437
    Abstract: An electrode catalyst for a fuel cell, an electrode, a fuel cell, and a membrane electrode assembly (MEA), the electrode catalyst including a carbonaceous support, and a catalyst metal loaded on the carbonaceous support, wherein the carbonaceous support includes a functional group bound on a surface thereof, the functional group being represented by one of Formula 1 or Formula 2, below,
    Type: Application
    Filed: October 10, 2013
    Publication date: November 13, 2014
    Applicant: SAMSUNG SDI CO., LTD.
    Inventors: Jun-Young KIM, Sung-Chul LEE, Myoung-Ki MIN, Tae-Yoon KIM, Hee-Tak KIM
  • Photoelectric device and manufacturing method thereof
    Patent number: 8852982
    Abstract: A photoelectric device is disclosed. The photoelectric device includes a semiconductor substrate, first and second semiconductor stacks having opposite conductive types and alternately arranged on a first surface of the semiconductor substrate, and a gap insulation layer formed between the first and second semiconductor stacks. An undercut may be formed in the gap insulation layer. A method of manufacturing a photoelectric device is also disclosed.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: October 7, 2014
    Assignee: Samsung SDI Co., Ltd.
    Inventors: June-Hyuk Jung, Young-Soo Kim, Sung-Chul Lee, Jae-Ho Shin, Dong-Hun Lee
  • Oscillators and method of operating the same
    Patent number: 8847692
    Abstract: Oscillators and method of operating the same are provided, the oscillators include a magnetic layer, and a magnetization fixing element configured to fix a magnetization direction of the magnetic layer. The oscillators generate a signal by using precession of a magnetic moment of the magnetic layer.
    Type: Grant
    Filed: July 1, 2011
    Date of Patent: September 30, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ung-hwan Pi, Sun-ae Seo, Kee-won Kim, In-jun Hwang, Kwang-seok Kim, Sung-chul Lee
  • Magnetoresistive elements and memory devices including the same
    Patent number: 8848432
    Abstract: Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer.
    Type: Grant
    Filed: August 22, 2012
    Date of Patent: September 30, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-chul Lee, Kwang-seok Kim, Kee-won Kim, Young-man Jang, Ung-hwan Pi
  • MAGNETIC MEMORY DEVICES AND METHODS OF WRITING DATA TO THE SAME
    Publication number: 20140269036
    Abstract: Magnetic memory devices include a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction, a bit line on the magnetoresistive cell and including a spin Hall effect material layer exhibiting a spin Hall effect and contacting the free layer; and a lower electrode under the magnetoresistive cell. A voltage is applied between the bit line and the lower electrode so that current passes through the magnetoresistive cell.
    Type: Application
    Filed: February 19, 2014
    Publication date: September 18, 2014
    Inventors: Ung-hwan PI, Kwang-seok KIM, Kee-won KIM, Sung-chul LEE, Young-man JANG
  • Magnetoresistive elements having protrusion from free layer and memory devices including the same
    Patent number: 8836057
    Abstract: Magnetoresistive elements, and memory devices including the same, include a pinned layer having a fixed magnetization direction, a free layer corresponding to the pinned layer, and a protruding element protruding from the free layer and having a changeable magnetization direction. The free layer has a changeable magnetization direction. The protruding element is shaped in the form of a tube. The protruding element includes a first protruding portion and a second protruding portion protruding from ends of the free layer facing in different directions.
    Type: Grant
    Filed: October 31, 2012
    Date of Patent: September 16, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-chul Lee, Ung-hwan Pi, Kwang-seok Kim, Kee-won Kim, Young-man Jang
  • MAGNETORESISTIVE STRUCTURES, MAGNETIC RANDOM-ACCESS MEMORY DEVICES INCLUDING THE SAME AND METHODS OF MANUFACTURING THE MAGNETORESISTIVE STRUCTURE
    Publication number: 20140252519
    Abstract: Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer.
    Type: Application
    Filed: January 29, 2014
    Publication date: September 11, 2014
    Inventors: Kee-won KIM, Kwang-seok KIM, Sung-chul LEE, Young-man JANG, Ung-hwan PI
  • SUPPORT FOR FUEL CELL, METHOD OF PREPARING THE SAME, AND ELECTRODE FOR FUEL CELL, MEMBRANE-ELECTRODE ASSEMBY FOR A FUEL CELL AND FUEL CELL SYSTEM INCLUDING SAME
    Publication number: 20140248552
    Abstract: A support for a fuel cell includes a substrate including highly crystalline carbon, and a crystalline carbon layer on the substrate.
    Type: Application
    Filed: November 1, 2013
    Publication date: September 4, 2014
    Applicant: SAMSUNG SDI CO., LTD.
    Inventors: Jun-Young KIM, Sung-Chul LEE, Myoung-Ki MIN, Yong-Bum PARK
  • MAGNETORESISTIVE STRUCTURES, MEMORY DEVICES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE MAGNETORESISTIVE STRUCTURES AND THE MEMORY DEVICES
    Publication number: 20140231941
    Abstract: Magnetoresistive structures, memory devices including the same, and methods of manufacturing the magnetoresistive structures and the memory devices, include a plurality of free layers each having a magnetization direction that is changeable, a separation layer covering at least two of the plurality of free layers, and at least one pinned layer opposing the plurality of free layers. The separation layer is between the at least one pinned layer and the plurality of free layers. The at least one pinned layer has a magnetization direction that is fixed.
    Type: Application
    Filed: February 18, 2014
    Publication date: August 21, 2014
    Inventors: Sung-chul LEE, Kwang-seok KIM, Kee-won KIM, Young-man JANG, Ung-hwan PI
  • Storage nodes, magnetic memory devices, and methods of manufacturing the same
    Patent number: 8803266
    Abstract: A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.
    Type: Grant
    Filed: December 7, 2011
    Date of Patent: August 12, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang-seok Kim, U-In Chung, Jai-kwang Shin, Kee-won Kim, Sung-chul Lee, Ung-hwan Pi
  • Omnidirectional antenna
    Patent number: 8803752
    Abstract: The omnidirectional antenna of the present invention comprises a dielectric core 20 of ceramic material which has a longitudinal hole 21 formed in the center; a strip line 30 which is bent to fit the circumference of the dielectric core 20 by a press-forming method and is covered over the upper outer circumference of the dielectric core; a lower cap 40 which is inserted over the bottom end of the dielectric core and has a hole formed at the center of the bottom; a feeder 50 which is passed through and inserted from down to up into the holes formed in the bottom cap and the dielectric core and the top end of which is connected with the strip line 30 on the upper surface of the dielectric core; and a strip line fixing means 60 for combining the lower cap and strip line to the dielectric core.
    Type: Grant
    Filed: January 23, 2008
    Date of Patent: August 12, 2014
    Inventor: Sung-Chul Lee
  • MEMORY DEVICE USING SPIN HALL EFFECT AND METHODS OF MANUFACTURING AND OPERATING THE MEMORY DEVICE
    Publication number: 20140211552
    Abstract: A memory device using a spin hall effect, and methods of manufacturing and operating the memory device, include applying a first operational current to a bit line of the memory device such that a spin current is applied to a magnetic tunnel junction (MTJ) cell coupled to the bit line due to a material in the bit line, wherein the bit line is electrically connected to a word line via the MTJ cell, and the word line intersects the bit line.
    Type: Application
    Filed: January 23, 2014
    Publication date: July 31, 2014
    Inventors: Ung-hwan PI, Kwang-seok KIM, Kee-won KIM, Sung-chul LEE, Young-man JANG
  • Oscillators and methods of operating the same
    Patent number: 8754717
    Abstract: An oscillator and a method of operating the same are provided, the oscillator may include a free layer, a pinned layer on a first surface of the free layer, and a reference layer on a second surface of the free layer. The free layer may have a variable magnetization direction. The pinned layer may have a pinned magnetization direction. The reference layer may have a magnetization direction non-parallel to the magnetization direction of the pinned layer.
    Type: Grant
    Filed: April 28, 2011
    Date of Patent: June 17, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-chul Lee, Sun-ae Seo, Un-hwan Pi, Kee-won Kim, Kwang-seok Kim
  • Thermally stable magnetic tunnel junction cell and memory device including the same
    Patent number: 8729647
    Abstract: A thermally stable Magnetic Tunnel Junction (MTJ) cell, and a memory device including the same, include a pinned layer having a pinned magnetization direction, a separation layer on the pinned layer, and a free layer on the separation layer and having a variable magnetization direction. The pinned layer and the free layer include a magnetic material having Perpendicular Magnetic Anisotropy (PMA). The free layer may include a central part and a marginal part on a periphery of the central part. The free layer is shaped in the form of a protrusion in which the central part is thicker than the marginal part.
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: May 20, 2014
    Assignee: Samsung Electronics., Ltd.
    Inventors: Sung-chul Lee, Kwang-seok Kim, Kee-won Kim, Young-man Jang, Ung-hwan Pi
  • MAGNETIC MEMORY DEVICES AND METHODS OF OPERATING THE SAME
    Publication number: 20140119106
    Abstract: Magnetic memory devices, and methods of operating the same, include a magnetoresistive element, a current apply element for applying a spin transfer torque switching current to the magnetoresistive element, and a magnetic field apply element for applying a non-perpendicular magnetic field to the magnetoresistive element. The magnetic memory device writes data in the magnetoresistive element by using the spin transfer torque switching current and the non-perpendicular magnetic field. The magnetoresistive element includes a free layer and a pinned layer each having a perpendicular magnetic anisotropy.
    Type: Application
    Filed: July 10, 2013
    Publication date: May 1, 2014
    Inventors: Sung-chul LEE, Kwang-seok KIM, Kee-won KIM, Young-man JANG, Ung-hwan PI
  • CATALYST FOR FUEL CELL, METHOD OF PREPARING SAME, MEMBRANE-ELECTRODE ASSEMBLY AND FUEL CELL SYSTEM INCLUDING SAME
    Publication number: 20140099568
    Abstract: Disclosed are a catalyst for a fuel cell, a method of preparing the same, and an electrode for a fuel cell, a membrane-electrode assembly for a fuel cell, and a fuel cell system including the same, and the catalyst includes a carrier; and an active metal supported on the carrier, wherein the carrier is crystalline carbon bonded with a functional group represented by the following Chemical Formula 1 at the surface thereof. In Chemical Formula 1, each substituent is the same as described in the detailed description.
    Type: Application
    Filed: March 14, 2013
    Publication date: April 10, 2014
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Myoung-Ki Min, Yong-Bum Park, Sung-Chul Lee, Jun-Young Kim, Hee-Tak Kim
  • Semiconductor apparatus capable of error revision using pin extension technique and design method therefor
    Patent number: 8689163
    Abstract: A semiconductor apparatus and a design method for the semiconductor apparatus allow debugging or repairs by using a spare cell. The semiconductor apparatus includes a plurality of metal layers. At least one repair block performs a predetermined function. A spare block is capable of substituting for a function of the repair block. And at least one of the plurality of metal layers is predetermined to be a repair layer for error revision. At least one pin of the repair block is connected to the repair layer through a first pin extension, and at least one pin of the spare block is capable of extending to the repair layer. When the repair block is to be repaired, the pin extension of the repair layer and the repair block is disconnected, and at least one pin of the spare block is connected to the repair layer through a second pin extension.
    Type: Grant
    Filed: December 1, 2010
    Date of Patent: April 1, 2014
    Assignees: Samsung Electronics Co., Ltd., IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
    Inventors: Dong-Yun Kim, Dong-Hoon Yeo, Hyun-Chul Shin, Kyung-Ho Kim, Byung-Tae Kang, Ju-Yong Shin, Sung-Chul Lee
  • THERMALLY STABLE MAGNETIC TUNNEL JUNCTION CELL AND MEMORY DEVICE INCLUDING THE SAME
    Publication number: 20140015073
    Abstract: A thermally stable Magnetic Tunnel Junction (MTJ) cell, and a memory device including the same, include a pinned layer having a pinned magnetization direction, a separation layer on the pinned layer, and a free layer on the separation layer and having a variable magnetization direction. The pinned layer and the free layer include a magnetic material having Perpendicular Magnetic Anisotropy (PMA). The free layer may include a central part and a marginal part on a periphery of the central part. The free layer is shaped in the form of a protrusion in which the central part is thicker than the marginal part.
    Type: Application
    Filed: November 20, 2012
    Publication date: January 16, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-chul LEE, Kwang-seok KIM, Kee-won KIM, Young-man JANG, Ung-hwan PI
  • PHOTOELECTRIC DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20140015087
    Abstract: A photoelectric device is disclosed. The photoelectric device includes a semiconductor substrate, first and second semiconductor stacks having opposite conductive types and alternately arranged on a first surface of the semiconductor substrate, and a gap insulation layer formed between the first and second semiconductor stacks. An undercut may be formed in the gap insulation layer. A method of manufacturing a photoelectric device is also disclosed.
    Type: Application
    Filed: March 15, 2013
    Publication date: January 16, 2014
    Applicant: SAMSUNG SDI CO., LTD.
    Inventors: June-Hyuk JUNG, Young-Soo KIM, Sung-Chul LEE, Jae-Ho SHIN, Dong-Hun LEE