Abstract: In a method of providing an operating characteristic of a resistive memory device, material of an electrode thereof is selected to in turn provide a selected operating characteristic of the device. The material of the electrode may be reacted with material of an insulating layer of the resistive memory device to form a reaction layer, the selected operating characteristic being dependent on the presence of the reaction layer.

Abstract: The present approach is a method of writing (which may be programming or erasing) data to a selected memory cell of a memory array. The array includes a plurality of word lines, a plurality of bit lines, a plurality of memory cells each including a diode and a resistive memory device in series connecting a word line and a bit line, and a plurality of transistors, each having a first and second source/drain terminals and a gate, each transistor having a first source/drain terminal connected to a bit line. In the present method a voltage is applied to a selected word line, and a voltage is applied to the second source/drain terminal of a transistor having its first source/drain terminal connected to a selected bit line. The voltage applied to the selected word line is greater than the voltage applied to the second source/drain terminal of that transistor.

Abstract: The present invention is a method of programming a memory device, wherein different levels or magnitudes of current may be applied to and imposed on the memory device so that any one of a plurality of memory states may be realized. A read step indicates the so determined state of the memory device.

Abstract: The present memory structure includes first and second electrodes, a passive layer, and an active layer containing nitrogen, the passive and active layers being between the first and second electrodes. Metal ions in the active layer bind to the nitrogen thereof, enhancing retention of the metal ions in the active layer for improved, stable data retention.

Abstract: The present memory device includes first and second electrodes, a passive layer between the first and second electrodes and an active layer between the first and second electrodes, the active layer being of a material containing randomly oriented pores which are interconnected to form passages through the active layer.

Abstract: The present invention is a method of programming a memory device, wherein different levels or magnitudes of current may be applied to and imposed on the memory device so that any one of a plurality of memory states may be realized. A read step indicates the so determined state of the memory device.

Abstract: A memory cell made of at least two electrodes with a controllably conductive media between the at least two electrodes is disclosed. The controllably conductive media includes a passive layer made of super ionic material and an active layer. When an external stimuli, such as an applied electric field, is imposed upon the first and second electrode, ions move and dope and/or de-dope the polymer. The applied external stimuli used to dope the polymer is larger than an applied external stimuli to operate the memory cell. The polymer functions as a variable breakdown characteristic diode with electrical characteristics which are a consequence of the doping degree. The memory element may have a current limited read signal. Methods of making the memory devices/cells, methods of using the memory devices/cells, and devices such as computers, hand-held electronic devices and memory devices containing the memory cell(s) are also disclosed.

Abstract: A memory element includes a first electrode, a passive layer on and in contact with the first electrode, a polyfluorene active layer on and in contact with the active layer, and a second electrode on and in contact with the polyfluorene active layer. The chemical structure of the polyfluorene active layer may be altered to take different forms, each providing a different memory element operating characteristic.

Abstract: The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i.e., preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.

Abstract: A memory array includes first and second sets of conductors and a plurality of memory-diodes, each connecting in a forward direction a conductor of the first set with a conductor of the second set. An electrical potential is applied across a selected memory-diode, from higher to lower potential in the forward direction, intended to program the selected memory-diode. During this intended programming, each other memory-diode in the array has provided thereacross in the forward direction thereof an electrical potential lower than its threshold voltage. The threshold voltage of each memory-diode can be established by applying an electrical potential across that memory-diode from higher to lower potential in the reverse direction. By so establishing a sufficient threshold voltage, and by selecting appropriate electrical potentials applied to conductors of the array, problems related to current leakage and disturb are avoided.