Abstract: A sintered object of silicon monoxide for use as a material for forming silicon oxide thin films is provided of which the evaporation residue as determined by subjecting a sample thereof to thermogravimetry at a heating temperature of 1,300° C. and in a vacuum atmosphere, namely at a pressure of not higher than 10 Pa, is not more than 4% by mass relative to the sample before measurement. This sintered object can be produced by sintering SiO particles having a particle diameter of not smaller than 250 ?m, either after press forming thereof or during press forming thereof, in a non-oxygen atmosphere. This sintered object is high in evaporation rate and, when it is used as a material for film formation, an improvement in productivity in producing silicon oxide thin films can be expected. Thus, it can be widely applied in forming silicon oxide thin films useful as electric insulating films, mechanical protection films, optical films, barrier films of food packaging materials, etc.

Abstract: A chip shaped electronic device comprising an element body including zinc oxide material layers and internal electrode layers, wherein when assuming a minimum distance from an outermost side of the internal electrode layer in the stacking direction to a surface of the element body is 1 and measuring an ion intensity ratio of Li and Zn, (Li/Zn), in a range from the surface of the element body to a depth of (0.9×1) by a secondary ion mass spectrometry (SIMS), 0.001≦(Li/Zn)≦500. According to the invention, it is possible to provide a chip shaped electronic device, such as a multilayer chip varistor, not requiring glass coating or other insulative protective layer, being tolerant of temperature changes, capable of maintaining high resistance of an element surface even by reflow soldering, being highly reliable, and capable of being easily produced, and a method of producing the same.

Abstract: It is an object of the present invention to provide a silicon monoxide sinter having a uniform texture, good machinability, and splash resistance, which are all required of a silicon monoxide vapor deposition material, or a silicon monoxide sinter having a diameter of at least 100 mm and the shape required of a sputtering target material, and to obtain both of these sinters stably and with good productivity. A silicon monoxide sinter with a bulk density of at least 1.68 g/cm3 can be obtained by sintering under hot pressing conditions comprising a pressing pressure of at least 15 MPa and a temperature of 1200 to 1350° C., and by using a press die which comprises an inner die divided into a plurality of segments and integrated in an integrated outer die with a gap therebetween, and a cushioning material disposed in this gap, it is possible to obtain a silicon monoxide sinter whose diameter is at least 100 mm and whose bulk density is at least 2.

Abstract: A chip shaped electronic device comprising an element body including zinc oxide material layers and internal electrode layers, wherein when assuming a minimum distance from an outermost side of the internal electrode layer in the stacking direction to a surface of the element body is 1 and measuring an ion intensity ratio of Li and Zn, (Li/Zn), in a range from the surface of the element body to a depth of (0.9×1) by a secondary ion mass spectrometry (SIMS), 0.001≦(Li/Zn)≦500. According to the invention, it is possible to provide a chip shaped electronic device, such as a multilayer chip varistor, not requiring glass coating or other insulative protective layer, being tolerant of temperature changes, capable of maintaining high resistance of an element surface even by reflow soldering, being highly reliable, and capable of being easily produced, and a method of producing the same.

Abstract: Provided are a porous sintered compact suitable for a filter, a power feeder in a polymer electrolyte membrane type water electrolyzer, a current collector in a solid polymer fuel cell and in addition a liquid dispersion plate, especially an ink dispersion plate for an ink jet printer ink and the like. A titanium powder sintered compact made of a plate-like porous compact is obtained by sintering spherical powder made of titanium or a titanium alloy produced by means of a gas atomization method. A void ratio in the range of from 35 to 55% is realized by filling without applying a pressure and sintering without applying a pressure.

Abstract: A high-purity silicon monoxide vapor deposition material which, in the formation of a film by vapor deposition, is effective in inhibiting splashino, and which has an average bulk density of 2.0 g/cml and a Vickers hardness of 500 or hiolier; a process for producing a high-purity silicon monoxide vapor deposition mate-rial consisting of SiO and metal impurities as the remainder, the total amount of the impurities beinc, 50 ppm or smaller, which comprises conducting a degassinc, treatment in a raw-material chamber at a temperature lower than the sublimation temperature of silicon monoxide, raising the temperature to sublimate silicon monoxide, and depositing the silicon monoxide on a substrate in a deposition chamber.

Abstract: A laminate type varistor has at least one pair of first and second inner electrodes and a varistor layer. The at least one pair of first and second electrodes and the varistor layer are laminated. A first outer electrode and a second outer electrode electrically are connected to the first inner electrode and the second inner electrode, respectively. In the laminate type varistor, the first inner electrode and the first inner electrode are separated by a predetermined distance from the outer electrode so that the first inner electrode has no electrode surface facing to an electrode surface of the second inner electrode.

Abstract: A laminated chip varistor has a varistor element including at least one varistor layer and at least two inner electrodes which are laminated alternatively, and outer most layers comprising the same material as the varistor layer; and terminal electrodes electrically connected to the inner electrodes each formed at each of the both edge portions of the varistor element; wherein a surface roughness (R) of the varistor element is in the range of 0.60 to 0.90 .mu.m.

Abstract: A voltage-dependent nonlinear resistor or varistor ceramic composition consists essentially of (1) an oxide of the formula: {Sr.sub.(1-x-y) Ba.sub.x Ca.sub.y }.sub.z TiO.sub.3 wherein 0.3<x.ltoreq.0.9, 0.1.ltoreq.y.ltoreq.0.5, x+y.ltoreq.1, and 0.84<z<1.16, (2) 0.001 to 5.000 mol % of at least one oxide of niobium, tantalum, tungsten, manganese or R wherein R is yttrium or lanthanide, (3) 0.001 to 5.000 mol % of SiO.sub.2, and (4) 0.001 to 5.000 mol % of MgO. When the varistor voltage is controlled by changing a re-oxidizing temperature without changing the composition, a satisfactory nonlinear index .alpha. is available over a wide range of varistor voltage. The dependency of varistor voltage on heat treating temperature is reduced.

Abstract: A high voltage capacitor is disclosed that comprises a grounding member (1), two through type capacitors (2 and 3), an insulating case (6) and insulating resin (71 and 72). The grounding member (1) has two raised portions (101 and 102) on which the through type capacitors (2 and 3) are secured. The insulating case (6) has two hollow cylindrical portions (61, 62) spaced apart by a distance D with their upper open ends joined to each other to form a recessed enclosure (63) in line with and following the inner diameter sections (611, 621) of the hollow cylindrical portions (61, 82) and their lower open ends fitted on the outer circumference of the raised portions (101, 102). The insulating resin (71 and 72) is provided around the through type capacitors (2 and 3) within the inner diameter sections (611, 621).

Abstract: In a process for the electrolytic production of magnesium by the molten salt electrolysis of magnesium chloride using a molten salt cell bath comprised mainly of one or more salts selected from alkali metal chlorides and alkaline earth metal chlorides, the molten salt bath is enriched with magnesium chloride by suspending a magnesium oxide and/or magnesium carbonate powder to form a molten suspension and passing a chlorine-containing gas through the molten suspension at a temperature of 600.degree.-900.degree. C. so as to react the suspended powder with chlorine to form magnesium chloride. The resulting molten salt enriched with magnesium chloride can be directly introduced into the cell for electrolysis, thereby eliminating moisture absorption by the highly hygroscopic magnesium chloride. A pure magnesium can be produced with a high yield and improved current efficiency.

Abstract: A numerically controlled grinding machine equipped with two registers in which data concerning the positions of the cylindrical and shoulder grinding surfaces of a grinding wheel is stored. A reference point is established on the wheel spindle stock. A reference member having two reference surfaces is disposed on the worktable. The machine further includes a manual pulse generator for moving the grinding wheel head and the worktable, detectors for detecting the distances traveled by the wheel head and the worktable, a data entry device, an arithmetic processing unit, and a memory.

Abstract: An operator's panel for a numerical controller of a grinding machine comprises a main frame of a generally box shape, which is carried on a front portion of a bed of the grinding machine for pivotal movement about a horizontal axis. A manual pulse generator for supplying the numerical controller with pulse signals is mounted in the main frame, and a manual feed handle is secured to an input shaft of the pulse generator. A mechanism is further provided for locking the main frame at such an angular position as desired by an operator of the grinding machine.