Abstract: A first amorphous film containing hafnium, oxygen and a first element such as zirconium is formed, a plurality of grains containing a second element different from any of hafnium, oxygen and the first element are formed on the first amorphous film, a second amorphous film made of the same material as the first amorphous film is formed on the plurality of grains and on the first amorphous film, and a metal film is formed on the second amorphous film. Thereafter, by performing heat treatment, the first amorphous film is crystallized to form a first orthorhombic ferroelectric film and the second amorphous film is crystallized to form a second orthorhombic ferroelectric film.

Abstract: A first amorphous film containing hafnium, oxygen and a first element such as zirconium is formed, a plurality of grains containing a second element different from any of hafnium, oxygen and the first element are formed on the first amorphous film, a second amorphous film made of the same material as the first amorphous film is formed on the plurality of grains and on the first amorphous film, and a metal film is formed on the second amorphous film. Thereafter, by performing heat treatment, the first amorphous film is crystallized to form a first orthorhombic ferroelectric film and the second amorphous film is crystallized to form a second orthorhombic ferroelectric film.

Abstract: It is related to improving a performance of a semiconductor device and suppressing yield deterioration. Using a resist pattern as a mask, an ion-implantation is performed from an upper surface of a semiconductor substrate to form an ion-implanted layer in the semiconductor substrate. By subsequently, another ion-implantation is performed. Then, another ion-implanted layer is formed in the semiconductor substrate so as to overlap with the ion-implanted layer. Next, a heat treatment is performed on the semiconductor substrate to diffuse impurities contained in the ion-implanted layers, thereby an p-type floating region is formed.

Abstract: A recycle information management system includes a communication device and a management device. The communication device transmits recycle information acquired from a recycle system via a network. The recycle system includes at least a recycling device that removes at least oil from the collected refrigerant to recycle the refrigerant. The management device includes a storage unit that stores the recycle information in association with a recycle system ID usable to identify the recycle system.

Abstract: A metal film, a manufacturing method of the metal film, semiconductor device, and a manufacturing method of semiconductor device are provided with high crack resistance (higher hardness) during wire bonding. The Metal film has first metal crystal grains, and the second metal crystal grains. Each of the first metal crystal grains has dislocations. Each of the second metal crystal grains has no dislocations. The number of the first metal crystal grains having the dislocations is larger than the number of the second metal crystal grains having no dislocations.

Abstract: An information processing apparatus includes a storage management unit that stores negative content determined as negative scene contents among material content constituting a story of content to be automatically produced in a state of being distinguishable from other material content.

Abstract: A ferroelectric memory cell includes a paraelectric film formed on a semiconductor substrate and a ferroelectric layer formed on the paraelectric film. The ferroelectric layer includes ferroelectric films and a plurality of grains. The ferroelectric films are made of a material containing a metal oxide and a first element. The plurality of grains are made of a material different from the material forming the ferroelectric films, and are made of a ferroelectric.

Abstract: An information processing apparatus includes a story generation unit that, based on a plurality of material content recorded in an accessible state, selects material content constituting a story set in story setting processing, and performs automatic content production by editing processing using the selected material content.

Abstract: The present technology relates to an imaging device, an imaging method and a program, each of which enables a user to appropriately give an instruction on a subject to be focused. The imaging device according to the present technology includes a signal processing unit configured to display information representing recognition results of a subject in an image obtained by shooting, and to display in a superimposed manner, in response to a user's voice input indicating a focus position, information representing the focus position estimated as the user's intention on the image. The present technology can be applied to an imaging device operable by a voice.

Abstract: A Semiconductor device includes a semiconductor substrate, an insulating film, a first conductive film, a ferroelectric film, an insulating layer, a first plug and a second plug. The semiconductor substrate includes a source region and a drain region which are formed on a main surface thereof. The insulating film is formed on the semiconductor substrate such that the insulating film is located between the source region and the drain region in a plan view. The first conductive film is formed on the insulating film. The ferroelectric film is formed on the first conductive film. The insulating layer covers the first conductive film and the ferroelectric film. The first plug reaches the first conductive film. The second plug reaches the ferroelectric film. A material of the ferroelectric film includes hafnium and oxygen. In plan view, a size of the ferroelectric film is smaller than a size of the insulating film.

Abstract: In a semiconductor device having MONOS memories configured by fin-type MISFETs, an increase in parasitic capacitance between wirings accompanying miniaturization of the semiconductor device is prevented, and the reliability of the semiconductor device is improved. In a memory cell array in which a plurality of MONOS type memory cells formed on fins are arranged, source regions formed on the plurality of fins arranged in a short direction of the fin are electrically connected to each other by one epitaxial layer straddling the fins.

Abstract: A rotary electric machine unit includes a rotary electric machine, where a protruding portion extending in an axial direction from a one end side cover portion toward the rotary electric machine is formed at a position below a rotation axis of the rotary electric machine and overlapping with the rotary electric machine. A refrigerant flow lower surface formed on a tip end side of the protruding portion and extending in the axial direction, and a recessed surface adjacent to a base side end portion of the refrigerant flow lower surface and extending in the axial direction at a position recessed upward than the refrigerant flow lower surface are formed below a center of the protruding portion in the upper-lower direction. The refrigerant flow lower surface of the protruding portion is arranged such that an axial central portion overlaps the rotary electric machine in the axial direction.

Abstract: There is provided a copper bonding wire that exhibits a favorable bondability even when a scrub at the time of bonding is reduced. The copper bonding wire is characterized in that when a sum of percentages of Cu, Cu2O, CuO and Cu(OH)2 on a surface of the wire as measured by X-ray Photoelectron Spectroscopy (XPS) is defined as 100%, Cu[II]/Cu[I] which is a ratio of a total percentage of CuO and Cu(OH)2 (Cu[II]) corresponding to bivalent Cu to a percentage of Cu2O (Cu[I]) corresponding to monovalent Cu falls within a range from 0.8 to 12.

Abstract: To provide an insulated wire that can increase in a partial discharge starting voltage, prevent deterioration of an insulator, and not cause worsening of an occupancy ratio, a coil that uses the insulated wire, a variable-thickness insulating tape used in manufacture of the insulated wire, and a manufacturing method of the same. The above-described problem is solved by an insulated wire (10) for a coil, comprising a conductor (1), and insulating coatings (2, 3) provided on an outer periphery of the conductor (1). The insulated wire (10) is constituted by the thick insulating coating (3) for an area where voltage increases and partial discharge readily occurs, and the thin insulating coating (2) for an area where the voltage does not increase and partial discharge does not readily occur, when the coil is wound. The thick insulating coating (3) and the thin insulating coating (2) are repeatedly provided at desired intervals.

Abstract: The present technology relates to an information processing apparatus, an information processing method, and a program capable of performing a voice operation by a natural expression. An information processing apparatus according to the present technology includes a command processing unit that, in a case where a voice command that is input by a user and instructs to control a device includes a predetermined word for which a degree of control is determined as ambiguous, executes processing matching the voice command by using a parameter matching a way of speaking of a user at a time when the voice command is input. The present technology is applicable to, for example, an imaging apparatus that can be operated by a voice.

Abstract: A performance of a memory cell including a ferroelectric film is improved. Reliability of the memory cell is ensured. A semiconductor device having a memory cell includes: a plurality of semiconductor layers configuring a channel region; a pair of semiconductor layers SI2 provided so as to sandwich the plurality of semiconductor layers SI1 in an X direction, connected to the plurality of semiconductor layers SI1, and configuring a source region and a drain region; a plurality of paraelectric films IL covering outer peripheries of the plurality of semiconductor layers SI1, respectively; a bottom electrode BE covering outer peripheries of the plurality of paraelectric films IL between the pair of semiconductor layers SI2; a ferroelectric film FE formed on the bottom electrode BE; and a top electrode TE formed on the ferroelectric film FE.

Abstract: A method for manufacturing a semiconductor device to provide a Metal Insulator Semiconductor Field Effect Transistor (MISFET) in a first region of a semiconductor substrate includes forming a first gate insulating film on the semiconductor substrate in the first region, forming a first gate electrode containing silicon on the first gate insulating film, forming first impurity regions inside the semiconductor substrate so as to sandwich the first gate electrode in the first region, the first impurity regions configuring a part of a first source region and a part of a first drain region, forming a first silicide layer on the first impurity region, forming a first insulating film on the semiconductor substrate so as to cover the first gate electrode and the first silicide layer, polishing the first insulating film so as to expose the first gate electrode, and forming a second silicide layer on the first gate electrode.

Abstract: Provided is an imaging device including: as assistant control unit that determines, on the basis of user's proficiency level information regarding imaging, an item presented to assist the imaging; and a presentation unit that presents item information, which is information regarding the item, to the user.

Abstract: To allow a metal oxide film composed mainly of O and at least one of Hf and Zr to exhibit ferroelectric properties. After deposition of a hafnium oxide film on a semiconductor substrate via an insulating film, the semiconductor substrate is exposed to microwaves to selectively heat the hafnium oxide film. This makes it possible to form a larger number of orthorhombic crystals in the crystals of the hafnium oxide film. The hafnium oxide film thus obtained can therefore exhibit ferroelectric properties without adding, thereto, an impurity such as Si. This means that the hafnium oxide film having a reverse size effect can be used as a ferroelectric film of a ferroelectric memory cell and contributes to the manufacture of a miniaturized ferroelectric memory cell.

Abstract: A semiconductor device includes a semiconductor substrate, an insulating film, a ferroelectric film, a first seed layer and a control gate electrode. The semiconductor substrate includes a source region and a drain region which are formed on a main surface of the semiconductor substrate. The insulating film is formed on the main surface of the semiconductor substrate such that the insulating film is positioned between the source region and the drain region in a plan view. The ferroelectric film is formed on the insulating film and includes hafnium and oxygen. The first seed layer is formed on the ferroelectric film. The control gate electrode is formed on the ferroelectric film. A material of the first seed layer includes at least one material of the ferroelectric film and at least one material of the first conductive film.